JPS59208072A - Sputtering device - Google Patents

Abstract

PURPOSE:To control the magnetic field intensity distribution of a target surface and to perform stable sputtering of an oxide, sulfide, etc. in a sputtering device which uses the oxide and sulfide for a target by providing plural pairs of specifically constructed magnetic poles near the target. CONSTITUTION:Many permanent magnets 2-9 are attached to the cathode part of a sputtering device on which a target is placed by connecting 2 and 9, 3 and 8, 4 and 7, 5 and 6 via another permanent magnet 1 and attaching the same to both ends of respective yokes 10, thereby forming a magnetic circuit. Coils 17 are wound via insulating materials 13, 14 on the yoke 10 and the magnitude and direction of the current to be conducted to the coils are changed to control the intensity distribution of the magnetic field (arrows I , II) on the surface of a target 20 attached to the cathode. An insulator such as an oxide, sulfide, or the like is stably sputtered even under the low gaseous pressure by such control of the magnetic field, by which the sputtering is accomplished with a uniform electro-optical characteristic distribution and film thickness distribution.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to an apparatus for forming a thin film of an oxide or sulfide insulator, and more particularly to a sputter link apparatus using an oxide or sulfide insulator as a target.

Configuration of conventional example and its problems In the conventional SufuS Tsutalink device, when performing sputtering by applying a magnetic field perpendicular to the νη field direction, stable sputter linking can be performed even at low gas pressure compared to when there is no magnetic field. It is known that First, in order to form a magnetic field on the surface of a rectangular target, sputtering apparatuses in which a permanent magnet is embedded inside the cathode are commercially available. However, when forming a thin film using such a sputtering apparatus, there are problems such as variations in the distance between the target and the substrate, lack of geometric symmetry in the structure of the sputtering chamber,
Due to non-uniform gas pressure distribution, non-uniform magnetic field strength distribution, non-uniform substrate temperature distribution, etc., even within the substrate line area of target glue 3 length, the film thickness distribution of electrical and optical properties is 5%.
There is a drawback that more than one problem occurs. Note that such drawbacks were particularly noticeable when an oxide or sulfide insulator was used as a target.

Purpose of the Invention The present invention solves the non-uniformity of electro-optical property distribution and film thickness distribution, and provides a high-speed deposition process that can stably sputter oxide and sulfide insulators even at low gas pressures. The purpose is to provide equipment.

Composition of the Invention The sputtering apparatus of the present invention is provided with a plurality of pairs of magnetic poles that form a magnetic field on the target surface having a component parallel to the target surface disposed on the cathode, inside the cathode or in the vicinity of the target. By varying the magnetic flux density of at least one pair of magnetic poles to control the shape of the magnetic field strength distribution formed on the target surface, stable sputtering can be performed even at low gas pressure, and electrical and optical It is characterized by being configured to avoid non-uniformity in property distribution and film thickness distribution.

DESCRIPTION OF EMBODIMENTS Hereinafter, embodiments of the present invention will be described based on FIGS. 1 to 6.

Figures 1 and 2 show the cathode section of the Suba-Sotaringe device of the present invention. (1) to (9) are permanent magnets, for example, rare earth cobalt magnets with high temperature are used here, and permanent magnets (2) and (9), (3) and (8), (
4) and (7), (5) and (6) are arranged at both ends of each B-ri OO whose centers are connected via the permanent magnet (1) to form a magnetic circuit. In addition, each yoke α0 is made of pure iron with high magnetic permeability, and the permanent magnet (1) and (
The yokes aO connecting 2) and (9), (1), (5) and (6) are each equipped with an electrically insulating sleeve made of Teflon.
]) to (coils 09 to 08 for changing the magnetic flux density of the magnetic poles and the direction of the lines of magnetic force via 141) are wound. (One is the current introduction terminal for coils 09 to 0, respectively. In the drawing, N and S written in magnetic poles (1) to (9) represent polarity. Figure 3 shows the magnetic field configured in this way. Figure 3 shows a cross-sectional view of the cathode part with the generator installed.

(III) is the cooling water inlet, yoke 0υ and coil O2~
It is connected to a cooling water supply pipe (not shown) of the zero scoop and target can, and used cooling water is discharged from a water outlet (not shown). By changing the magnitude and direction of the current flowing through the coil (1 to (18)),
The intensity distribution of the magnetic field (arrows I, n) on the surface can be controlled.

In Figure 4, the length, width, and thickness are each 37 cm.

Using a target of 12 cm, 0.5 c + n lead niodate sintered body (porosity 40%), a 10 c + n x 30 (2) 10 cm + n x 30 (2), manufactured by Ninji Co., Ltd., USA, product number CG, was placed at a position 7 crnmf from the target surface. The film thickness distribution of a thin film is shown when a -7059 glass substrate is installed and high-frequency sputter linking is performed at a pressure of 7×1O−3 Torr in a 4:1 mixture atmosphere of argon and oxygen at a substrate temperature of 400° C. The broken line (a) shows the film thickness distribution when no current is applied to the coils 09-08), and in this case it was ±15%, but when the current is applied to the coils 051-θ8)? By controlling the J flow, a thin film with a film thickness distribution of ±2% could be formed as shown by the solid line (b). In addition, the distribution of relative permittivity and dielectric breakdown electric field strength has been improved to 60 ± 5% (1,5X
A thin film of 106±5%) V/hi was formed. The dielectric constant and dielectric breakdown field strength of a thin film largely depend on the substrate temperature distribution, target temperature distribution, target uniformity, and plasma state between the target and the substrate. The porosity is 10%.
When the above sintered bodies are used as targets, the target temperature distribution and plasma non-uniformity are likely to occur, and highly accurate control of these is required to obtain a thin film with uniform electrical properties. . In the present invention, a thin film with uniform electrical characteristics can be obtained by precisely controlling the magnetic field distribution on the target surface.

In addition, tarp and sulfide sintered bodies (porosity of 10% or more)
A similar effect was obtained when used in soto.

In particular, when a phosphor thin film containing zinc sulfide as a main component is formed by the Sunonutsuttaring method, it has been found that the luminous efficiency is greatly affected by the plasma condition, temperature distribution on the target surface, substrate temperature distribution, etc. In this case as well, it was possible to obtain a phosphor thin film with high luminous power and uniformity over a wide area using the apparatus of the present invention.

When a quadroluminescent display panel was formed by combining an oxide insulator film formed by the apparatus of the present invention and a phosphor thin film whose main component is zinc sulfide, it showed high luminance and efficiency, and a large surface area. A uniform display panel could be formed with good reproducibility.

In addition, in the above example, the magnetic field from the permanent magnet and the magnetic field from the electromagnet were combined to control the magnetic field distribution on the tarp/lid surface, but the same effect can be obtained by using only the electromagnet without using the permanent magnet. That is clear.

In addition, in the above embodiment, the magnetic field generating part was incorporated inside the cathode, but this is the same even if the magnetic pole (A) is installed around the target (A), as shown in Figures 5 and 6. The effect was obtained. eυ is the cathode, (c) is the coil, (c)
is a yoke 0 According to the sputter link device of the present invention as described in the detailed description of the invention,
The magnetic field distribution on the target surface is controlled to correct the density distribution of particles ejected from the target and the temperature distribution of the target, and the plasma density distribution between the target and the substrate is also controlled, resulting in a uniform substrate temperature. It is possible to form a thin oxide or sulfide film with uniform thickness distribution and electrical and optical properties even on a large-area substrate.

[Brief explanation of drawings]

FIG. 1 is a plan view of the main part of the cathode part of an embodiment of the sputter link device of the present invention, FIG. 2 is a sectional view taken along line XX in FIG. 1,
FIG. 3 is a cross-sectional view of the cathode part in which the magnetic field generating section shown in FIGS. 1 and 2 is incorporated, FIG. FIG. 6 is a plan view and a YY sectional view showing another embodiment of the cathode portion of the sputter link device. (1)~(9)(a)・Magnetic pole, 00■ Yoke, OD~
α (A)...Electrical insulation three, 00-08) (C)
Coil, c2 (Tokuge Soto, t21) / cathode agent Yoshihiro Morimoto Figure 1 Figure 2 Figure 3 A ( Figure 4 1 → anti-up distance (cm)

Claims (1)

[Claims] 1. A magnetic field having a component parallel to the target surface disposed on the cathode is applied inside the cathode or near the target by fi [
A configuration is provided in which a plurality of pairs of magnetic poles are formed on the target surface, and the shape of the magnetic field strength distribution formed on the target surface is controlled by varying the magnetic flux density of at least one pair of magnetic poles among the plurality of pairs of magnetic poles. sputter link equipment. 2. The snow/tube according to claim 1, characterized in that at least one pair of the plurality of pairs of magnetic poles is an electromagnet so that the magnetic flux density of the magnetic poles can be varied.
Jji device. 3. The planar shape of the target is rectangular, and multiple mF
Patent No. 5, characterized in that a plurality of magnetic poles are arranged along one long side of the target near the back surface of the target, and a magnetic pole of opposite polarity to the magnetic pole is arranged along the other long side. Sputtering apparatus according to claim 1. 4. The target is an oxide or sulfide insulator, and its density is 90 to 40% of the theoretical density (porosity: 10
60%) of the sintered body.