JPS59204269A - Solid-state image pickup element - Google Patents

Abstract

PURPOSE:To restrain blooming and smear by laminating a photo transmittance variable element on the photo receiving surface of a substrate. CONSTITUTION:A clear electrode layer 8 is provided above an insulation film 5 at a fixed internval, and the clearance between this insulation film 5 is the clear electrode layer 8 is filled with nematic liquid crystal 9. A fixed voltage is impressed on the substrate and said variable element, thus making the photo transmittance at the position corresponding to each of a plurality of picture elements of said element variable according to the variation of the potential due to the photoelectric conversion of each of a plurality of the picture elements. Thereby, the photo transmittance decreases with the increase of the amount of the incident light, therefore the blooming that a strong light comes incident to some picture element, resulting in the inflow of photo charge flowing out of this picture element into a vertical transfer line, and the smear that the photo charges generated at the substrate bottom in proportion to the amount of the incident light diffuses to said line can be restrained satisfactorily.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to solid hammering and gathering, and involves laminating a light transmittance of 7 on the light-receiving surface 1 of a 111 plate. [ii] To suppress the υ] functional decoy (F for the purpose of providing (j) the territorial water r.

In general, in solid-state III ai
" flows into the vertical transfer line that outputs the product l', and the screen -
)) This (13) Blue mink 4 'l L' /,-li, which has reached the deep part of the substrate, pulls two bands.Light by infrared light. is diffused to both 1p transfer rains, and C is on both sides! Draw a band in the direction of 11.

i・'(Nori Lki Zoruminkni') I (IJ, A-
Half [1-do 1 twin or vertical Δ-part [1
- excess opto-telegraph y, by means of the drain structure,
-/I.

It flows into the 1-drain of bar 7 to suppress rJR blooming that occurs when strong light is incident.

However, in Sumi\no, the amount of oxidized beef increases in proportion to the Okawasaki area (・, the current solid-state image sensor still has the drawback of not being able to sufficiently suppress C11. (It is possible to keep the Sumi A7's 4L emission low by varying the aperture of the optical system, but if only part of the subject is 1121
If the image is bright, smear (l) will occur in this bright area, and the smear suppression by this iris system is insufficient.

The present invention (1) eliminates the above-mentioned drawbacks and is described below with reference to the drawings.

Figure 1 shows a sectional view of the first embodiment of the 416 solid-state image sensing device according to the present invention. P-decade layer 2, n-decade layer 3, which operates as a photodiode,
An n-type layer 4 is formed which operates as an -IA7-di-coupled device (hereinafter referred to as rccDJ) for ``1 transfer. A layer of an insulating film 5 of silicon dioxide is formed in this insulating layer 14 (plate 1, 1, 111).
111 Between L/ “c, history ni” Jugata bi 3 To II
-1je I';g+ /1 between sretsushini'-
Ludgut 6. Electrodes 7 are formed corresponding to the F1-type layer j4 and the P-type layer 2.

On the upper surface of the insulating film 5, a transparent conductive layer E3 is provided at a predetermined interval of 4''U, and between this insulating layer II!,! 1! Another quick liquid crystal 1
) is /c il'j (:re(). A transparent glass layer 10 is stepped on the upper surface of the transparent electrode layer 9, and furthermore, the transparent glass layer 10 is jΔMeibo accent film 11 ( 71Ware J5, this transparent appeal film 11 Nakat, l CL '7
A1-Yu'-(O1- to (1-1 consisting of 11+ form layer 3, )J' Il Toil part removed Ita tiik
Layer 12 KaiiiQ &1U'F(.

(Yes, the electric quadruple layer 7 is connected to the terminal 13) by 1x (
′; In the history, a voltage V is applied between the P-type substrate 1 and the transparent electrode layer ε (4- is applied by the DC power supply 14, and 1′
) r i・2 In other words, transparent electrode I? 2i8. Nemair ivy) (product 5), on the transparent gales layer 10 and the n-shaped layer 3,
1'-) (Light transmission/ne' variable element is configured and multiplied on the light receiving surface 1.
is a transparent type 't%. 0 to vary the light transmittance.The relationship between the applied voltage, that is, the electric field strength, and the light transmittance of this variable light transmittance element is shown in Figure 2. The rate is constant (with ′,
When the applied voltage is from V2 to Vl, the light transmittance decreases corresponding to the C and L voltages, and when the applied voltage exceeds VJ, the light transmittance becomes constant again.

Here, a voltage having a waveform as shown in FIG. 3 is applied to the terminal 13 shown in the first diagram. Due to the pulse a of the voltage \/1 applied during the vertical blanking period, the small nonce of Go 1 to G becomes high and the foot diode becomes 4jl:
The photocharge accumulated in JNO\cNORU11+ type layer 3 is C01
1) Transferred to form Fi71, this transfer iZ Naotoshi, jnshi\norφIG.

11-Type 1 n j4 Bononshi) l φCCD each is the 4th
The state shown by the solid line I in the figure is 1j. A sharp substrate 1 and a transparent electrode 8 in which the 11+ type layer 3 has a φ1 bond.
Since the voltage V is always applied between the 1+ type layer 3 and the transparent electrode layer 8, the light transmission at this time is shown in Figure 2. The Light of Changeable Honryo'＞n
The error rate is α: (゛ exists. After this, n - 1)2'; q
/l(B y, 1 charge is vertical transfer pulse 1 shown in Figure 3)
)but! tf;: 1tJ applied to 'j'i, '3
[The rough surface shown in Figure 1] - The n-type layers extending in ten directions are sequentially rolled
But this ear! When light enters the diode formed by the n-shaped layer 3 and the p-type substrate 1 between the direct transfer brightness, this light is photoelectrically converted and 1) a photo charge is generated in the 10-shaped layer 3. accumulates, and the port scene A of the 1+ type layer 13 is, for example, φ7・Ma(IJ, l:Riro,).

At this time, the n-ten type 1 & i 3 and the transparent type 1' (lI!・7
The electric current between 8 and 1f17
13. After this, the light transmittance decreases continuously as the light velocity increases.

When the number of human beams further increases, the 11+-type layer 3's bonanza 1...
do,.

The potential difference between the transparent electrode layer 8 and the transparent electrode layer 8 is \14 and 7(, transmission <v l
;1, α: From this point on, the input CJ light maximum increases [i
``c'b light transmission (' decreases and turns red. After this, when the ``X full'' of the n-shaped layer 3 decreases and becomes below Cφ101, blooming occurs, but -1- Before the recorded potential difference exceeds V4, the next readout (because of 5, terminal 13
A pulse a enters, and 1) the podensile T' of the ten-shaped layer 3 is set to φ1.

In this way, the light transmittance i1 changes depending on the human body and the body: r
Since the light transmittance of the lens decreases from α1 to α13L, the increase in smear V is suppressed in proportion to the amount of incident light.

51st chapter IJ1 This explanation [This is the second history of solid-state image carriers. In the same figure, the first
The same parts as in the figure are marked and their explanations are omitted. is output shear 1
- It is supplied to the register (shown in the figure (゛)), is passed through this shift register, and is output as an It-5 series video signal, and is supplied to Brian 120. It is amplified by this pre-fump and - (output The video signal to be output is branched into two, and one of the two is supplied to the subsequent professional wrestling amplifier circuit (not shown in the figure) via the output width 21, where it undergoes predetermined processing and is turned into an unauware history. (L bow has been added with “f” (79 go 1)
1':'It is said to be the statue of Shingetsu. In addition, the signal is supplied to the integrating circuit 22 which outputs the feedback circuit 't ('7'l I). 111'l, which is 1 series compared to 'l'
Outputs digits. 1 This voltage is buffer amplifier 2 y'1
C is applied to the transparent electrode layer 8 through the in. /1, IN type substrate 1 (,1, for example, is grounded and has a predetermined potential.

Here, as shown in the first diagram, Hayasu 1 and Rokudenden 4 to layer ε3
1.1 when voltage V is applied to 71) between
1. Immediately after pulse a enters 11+ type layer 3 and jΔ Meidenden 14
The electric voltage difference between the 7 layers ε3 is V+, and this 1 electric discharge 1)
J: It takes time, and if there is a large amount of incident light, smear will occur before the transmittance decreases.
) There are things. However, if a circuit like the one shown in Figure 5 (11-J, person Q, 1 and 1 is used), the connection between the substrate 1 and the conductive conductor 1 and 3 will change. When the amount of incident light is large, the voltage applied to the electrode layer 8 increases, and the voltage applied to the electrode layer 8 increases, and
The potential A between 0 becomes about 2, and the time at which the light transmittance begins to decrease is shortened, and the smear A7 is sufficiently suppressed.

J-3, shown in Fig. 1 and Fig.
By providing a 1-barf [j-drain or by installing an 11-type 1t4i on the bottom surface of the P-type substrate 1 and creating a vertical structure of 3'Cnpn, the effect of suppressing barf 11 norming can be further increased by providing a jRl
A3. The above embodiment was explained using a CCD type element as an example, but this is a 40S type element. However, the present invention is not limited to the above embodiments.

As mentioned above, the solid-state image structure according to the present invention is constructed on a substrate. A solid-state FFG image element is used to perform photoelectric conversion on images 1 and -8, and the light transmittance changes depending on the electric field strength on the light-receiving surface of the substrate. It is made by stacking various light transmission chamber variable elements, and a predetermined voltage is applied between the substrate and the light transmission chamber variable element to increase the density by photoelectric conversion of each of the plurality of pixels!
1. The light transmittance of the light transmittance-riJ variable element at positions corresponding to a plurality of pixels is changed accordingly. - Therefore, as the amount of incident light increases, the light transmittance decreases.When strong light enters a certain pixel, the photoelectric currents overflow from this pixel, J) or + Sujiin (Flowing blooming, G, human, J light;) “
・The width is 1 cm, (the bottom of the grass root η, the photoelectric wave that is generated is transmitted in the small part (S diffusion), and the violet that is generated is suppressed to the light beam.) It's worth it.

In addition, there are multiple individuals who have created 414 on the board], :(this(
Photodenhen 1 moxibustion ll! J, H statue A. Take out No. J-.
]Solid 1ii? In the image element, a light transmitting chamber variable element whose light transmittance changes depending on the electric field strength is laminated on the light receiving element equipped with multiple pixels of the L4 plate, and a video signal is output. 7.1j7 Set up a W circuit that applies an electric current J1 corresponding to the input QJ light between the substrate and the light transmitting base. This is because the light transmittance of the near 11 pixels can be varied in response to the change in the light transmittance variable element f in response to the change in the electric power conversion of the light transmittance element f. As soon as the photoelectric transmission of the famous painting is transferred, the light transmission begins to decrease.
Accordingly, 7. +7 reduced bloom mink and O sumi "l no", etc. glue'I 艮I]'Jrushino.

be.

[Brief explanation of drawings]

Figures 1 and 5 show the solid state of the present invention! ! ! : f's
Cross-sectional diagram of each embodiment of i% J' 1 circuit configuration diagram, 2nd column I
is>'L'+ ;Characteristic diagram of Mori pass rate iiJ variable element, Fig. 3 Beam'] Fig. 1, Fig. 4
The figure is a) '1 figure. :,
8...j4 Ming' City JMj layer, 9...LCD, 14...
・N-current power supply, 20... Buri Non 1.22... Integral circuit. Figure 1 Gate 111i □ Figure 5 Dingzhuin City jl-:: 1. Display of thing fl Showa () ε3 if! I, 11 +1'l petition No. 79
722 g2, title of the invention 1] lv outside, '3, person making the amendment 4! im '1 out 9 i 1 person 11 places 〒221 Kanagawa Su1! beside? ! (Yamagami Kinyo I
``A Moriyacho 3-1-+] No. 12 name (432)
Mizuhikuku Co., Ltd. Representative Director Ne! Shishi ;0
- Part 4, 11JJ people, 1-place 〒102 Middle East! 55-7, Kojimachi, I-ku, Dairo I, details t;
,. Contents of Supplement 7 II aIr'i, 3rd L"! "I! 8? ”l)
l'll:'l LL,! 41”RJ IL I
Do 1 mountain 11 ruru.

Claims (2)

[Claims] (1) Photoelectric conversion is performed in each of the plurality of pixels formed by base number t-+ko)IJ1, and the solid-state carrier image A1 is
In the final stage, a plurality of temporary pixels with HJ>N are set up (7111 layers of variable light transmittance elements whose light transmittance changes according to the electric field strength) are formed on the light-receiving surface. Light transmittance 71J change A (applying one predetermined electric current between the light and the electric current conversion of the plurality of pixels according to the change in the electric power) A solid-state imager J' characterized in that the light transmittance at positions corresponding to the plurality of pixels of the 1-returner is configured to vary by iiJ. (2) Photoelectric conversion is performed using multiple pixels formed on the B4 substrate, and the image (51) is taken out from the solid-state imaging probe (J5), and light is transmitted onto the light-receiving surface, which is provided with a plurality of pixels on the opposite side. The incident light obtained by integrating the video signal is simply applied to the substrate and the light transmittance is changed by the voltage applied to the substrate. The feedback circuit applied between the elements is 1 (CI(:),, ::4
;The light transmittance at the position corresponding to one or more pixels of the light transmittance variable element is changed again according to the change in the point of view of the photoelectric conversion of multiple pixels. J, ) ('6: A solid history that is characterized by being born 1゜ @ Takacho