JPS59197102A - Method of producing moisture sensor - Google Patents

Method of producing moisture sensor

Info

Publication number
JPS59197102A
JPS59197102A JP58048515A JP4851583A JPS59197102A JP S59197102 A JPS59197102 A JP S59197102A JP 58048515 A JP58048515 A JP 58048515A JP 4851583 A JP4851583 A JP 4851583A JP S59197102 A JPS59197102 A JP S59197102A
Authority
JP
Japan
Prior art keywords
ruthenium
glass frit
humidity
humidity sensor
glass
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58048515A
Other languages
Japanese (ja)
Other versions
JPH0122965B2 (en
Inventor
渡部 直衛
結城 経治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Marcon Electronics Co Ltd
Original Assignee
Marcon Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Marcon Electronics Co Ltd filed Critical Marcon Electronics Co Ltd
Priority to JP58048515A priority Critical patent/JPS59197102A/en
Publication of JPS59197102A publication Critical patent/JPS59197102A/en
Publication of JPH0122965B2 publication Critical patent/JPH0122965B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
  • Non-Adjustable Resistors (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 本発明は電極材料を改良した金属敞化物を使用した湿度
センサの製造方法に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of manufacturing a humidity sensor using an improved metal hydride as an electrode material.

一般に湿度センサは相対湿度の変化を電気抵抗の変化と
して検出するもので、すばやい応答速度を雑味するため
感湿素子自体がもつ気孔の電極によってのふさがり度合
を最小限にとどめ、しかも感湿素子自体に形成する電極
面の有効面積を最大限(准医することが要請されておシ
、電極材料の選定は確度センサの特性上京安な要件であ
る。
Humidity sensors generally detect changes in relative humidity as changes in electrical resistance.In order to achieve a quick response speed, humidity sensors minimize the degree of blockage of the pores of the humidity sensing element itself by the electrodes. It is required to maximize the effective area of the electrode surface formed on the sensor itself, and the selection of the electrode material is a critical requirement based on the characteristics of the accuracy sensor.

従来このような要請にこたえるべき電極材料としてはA
u 、 Pt 、 Ag  などの負金属拐料が用いら
れているが、これら黄金属材料は高価格のため湿度セン
サとしてのコストを高くする結果にな)、さらに加えて
例えばAgを用いた場合感湿嵩子内部にAgの粒が入っ
てしまうマイグレーション現象によって大電流下でショ
ートしてし葦う問題があるなど実用面での欠点がめった
。での7こめ近年駁化ルテニウムが電極材料として注目
δノしてさている。しかして鹸化ルテニウムをtm材料
として用いる場合感′1M粂子と密層させるためにるる
槻のガラスフリット成分を加えなければならないと同時
に感湿素子自体がもつ気孔を電極によってできるかぎシ
ふさぐことのない状態を確保するために、躯化ルテニウ
ムペースト中のガラスフリット成分および配合比耶さら
にガラス7リツトの酸化ルテニウムに対する添加量はき
わめて重蜜な条件である0 本発明は上記の点に甑みてなされたもので、醗化ルテニ
ウムペーストにおけるガラスフリット成分および該フリ
ット成分の配合比率さらにガラス7リツト成分全社の戯
化ルテニウムに対する添加旭を規定することによって信
頼性に′畠んだ安価な湿度センサを得ることのできる湿
度センサの製造方法を提供することを目的とするもので
ある。
Conventionally, the electrode material that should meet these demands is A.
Negative metal particles such as U, Pt, and Ag are used, but these yellow metal materials are expensive and result in an increase in the cost of the humidity sensor. There were many practical drawbacks, such as the problem of short-circuiting under large currents due to the migration phenomenon in which Ag particles entered the wet bulking element. In recent years, ruthenium ferrite has been attracting attention as an electrode material. However, when saponified ruthenium is used as a TM material, it is necessary to add a glass frit component of Rurutsuki in order to form a close layer with the moisture sensitive element itself, and at the same time, the pores of the moisture sensitive element itself are not blocked by the electrodes. In order to ensure the above-mentioned condition, the glass frit components and blending ratio in the ruthenium oxide paste, as well as the amount of glass 7 liters added to the ruthenium oxide, must be set under extremely strict conditions. To obtain an inexpensive humidity sensor with high reliability by specifying the glass frit component in the ruthenium diluted paste, the blending ratio of the frit component, and the addition ratio to the ruthenium diluted glass component. It is an object of the present invention to provide a method for manufacturing a humidity sensor that can perform the following steps.

以下本発明につき説明する。すなわち第1図および第2
図に示すように例えばZn、Or Cr204rL i
 20 * V 205  などの金)s4阪化切を酋
垣杵取しこれをボールミルなとでよく混会し600〜9
00’C171++Jiで焙睨し、δらにホリビニルア
ルツール水浴液をバインダとして数粒し板状に成形し、
ついで1000〜1400°Cの温度で1〜5時聞ブ克
ししその後研磨して焼結体(1)を形成する。つきに該
睨&i体(1)の表裏両面に外周円を残して酸化ルテニ
ウム(’Ru0z)に5102.PbOjMgO,A1
20a。
The present invention will be explained below. That is, Figures 1 and 2
As shown in the figure, for example, Zn, Or Cr204rL i
20 * Gold such as V 205) Take a s4 hanka-kiri and mix it well with a ball mill.600~9
Roast with 00'C171++Ji, add a few grains of Holivinyl Artzol water bath liquid as a binder to δ, and form into a plate shape.
Then, it is heated at a temperature of 1000 to 1400°C for 1 to 5 hours, and then polished to form a sintered body (1). Then, ruthenium oxide ('Ru0z) was coated with 5102. PbOjMgO,A1
20a.

Zr0prの配合比率として重量比で5iOs+  2
.6: PbO3,4: MgO0,2: Al2O!
l 1.0:  ZrO22,8となるようにしたガラ
ス7リツト成分1〜1omk%添加し、他に浴剤および
樹脂すどを混合し′fc、醗化ルテニウムペーストをス
クリーン印刷し120 ’0で乾探し700〜900°
Cで3分間腕材し電極(2a) (2b )を形成し、
該電極(2a)(2b)にそれぞ九端子(3aH3b)
を&[してなるものである。
The blending ratio of Zr0pr is 5iOs+2 by weight
.. 6: PbO3,4: MgO0,2: Al2O!
l 1.0: Add 1 to 1 omk% of the glass 7-litre component to give ZrO22.8, mix bath additives and resin suds, screen print ruthenium diluted paste, and print at 120'0. Dry search 700-900°
C for 3 minutes to form electrodes (2a) and (2b).
Nine terminals (3aH3b) are attached to the electrodes (2a) and (2b), respectively.
It is made by &[.

以上のように構成してなる湿度センサの製造方法によ扛
ば電極材料として重要な安住であるlた湿巣子目体がも
つ気孔のふさがDk合を最小限にとどの電極面の有効面
積を最大限確床できるため特注劣化がなく信頼性に′晶
む効果をXF3渾する。
By the manufacturing method of the humidity sensor configured as described above, the effective area of the electrode surface can be minimized to minimize the Dk concentration due to the blockage of the pores of the hygroscopic body, which is an important shelter as an electrode material. Since the floor space can be maximized, there is no custom-made deterioration, and the XF3 has the effect of improving reliability.

つぎに実地例にもとすき本発明を塾らに詳細に説明する
。まずZn0 50モル%、Cr、+04 41モル%
 、 L12o  4.5モル%、 V2Q5 4.5
モル%を秤取しこれをボールミルでよく混合する。つい
でこれらの混合物を800°Cの温度で焙焼し、しかる
のちポリビニルアルコール水浴液を臨月混合し厚さ 0
.24m 直径9酊の円板成形体を得る。
Next, the present invention will be explained in detail using a practical example. First, Zn0 50 mol%, Cr, +04 41 mol%
, L12o 4.5 mol%, V2Q5 4.5
Weigh out the mole % and mix it thoroughly with a ball mill. These mixtures were then roasted at a temperature of 800°C, and then mixed with a polyvinyl alcohol water bath solution until the thickness was 0.
.. A disk molded body with a diameter of 24 m and 9 mm was obtained.

しかして該円板成形体を1300°Cの温度で3時間l
、+と結して得た感湿巣子の表裏両面に外周縁を残して
RuO2に重量比で5iOs+ 2.6  : Pb0
3.4 :AigOO,2:   Al2O31,0:
  ZrO22,8の配合比率からなるガラス7リツト
成分の館加址(重量比で)としてそれぞれ赴わせ敏化ル
テニウムをスクリーン印λ+ilj L/て120 ’
Oにて乾燥し、しかるのちsoo’cにて3分間ff1
Flけを行い゛電極ヲ形奴した湿度センサそrしぞれの
ガラスフリット診7Jil以に苅する変化桁、ヒステリ
シスおよび湿度変化率特性を測定した結果、第3図〜第
8図に示すようになった。なお試料として用いたガラス
フリ7 ) %%加fitは0.5%、1%、3%、5
%、10%。
The disk molded body was heated at a temperature of 1300°C for 3 hours.
, + leaving the outer periphery on both the front and back sides of the moisture-sensitive nest obtained by combining RuO2 with 5iOs+ 2.6: Pb0
3.4 :AigOO,2: Al2O31,0:
A glass with a blending ratio of ZrO22 and 8 was added to each of the 7 components (in weight ratio) and sensitized ruthenium was screen-printed at λ+ilj L/120'
Dry with O, then ff1 with soo'c for 3 minutes.
As a result of measuring the change digit, hysteresis, and humidity change rate characteristics of each glass frit of the humidity sensor with the electrode shaped, the results are shown in Figures 3 to 8. Became. In addition, the glass free used as a sample7) %% addition fit is 0.5%, 1%, 3%, 5
%, 10%.

15%、20% の’74!ii頼である。15%, 20% '74! ii.

第3図はガラスフリット鰭加鉦に対するR1!o/R9
0で、さらに第5図〜第8図はガラス7リツ) 除7J
II垣に対する50°C90%RH中に5000 h放
置したときの相対i:N度30%RH,50%RH,7
0%RHj90%RRそれぞ汎の抵抗値の変化を変化率
で表わした湿度変化率を示すものである。
Figure 3 shows R1 for glass frit fins! o/R9
0, and in addition, Figures 5 to 8 are glass 7 pieces) excluding 7J
Relative i when left for 5000 hours at 50°C and 90%RH against II fence: N degree 30%RH, 50%RH, 7
0%RHj90%RR respectively indicate the humidity change rate expressed as a change rate of the general resistance value change.

第3図〜第8図から明らかなようにガラスフリットひ別
置として1〜10重倉%のものは変化桁が犬さくヒステ
リシスは小ぢく初期特性においてすぐれていると同時に
、烏渦局湿中における放置試験においても湿度変化率は
変わらず長時聞安定した特性をa、持てきる丁ぐれた効
果を実証した。
As is clear from Fig. 3 to Fig. 8, when the glass frit is separately installed, the hysteresis is small and the initial characteristics are excellent, and at the same time, when the glass frit is placed separately, the hysteresis is small and the initial characteristics are excellent. Even in the storage test, the humidity change rate did not change, demonstrating the excellent effect of maintaining stable characteristics over a long period of time.

以上述べたように本発明によれば戯化ルテニウムに配合
比率としてmi比で5i022.6 :pbo 3.4
  :  MgO0,2:  Al2O31,0:Zr
0z  2.8となるようにしたカラス7リツト成分を
至凪愈に対して1〜10本i%が加した庫化ルテニウム
ペーストを感湿菓子成製両面に玩角けて電極を形成する
ことによって初期特性はもとよシ信頼性に′品んだ安価
な湿度センサを得ることのできる湿度センナの製造方法
を提供できる。
As described above, according to the present invention, the compounding ratio of ruthenium is 5i022.6:pbo 3.4 in terms of mi ratio.
: MgO0,2: Al2O31,0:Zr
0z 2.8 and add 1 to 10 i% of Karasu 7 lit ingredients to the lowest temperature to form an electrode on both sides of the moisture-sensitive confectionery product. Accordingly, it is possible to provide a method for manufacturing a humidity sensor that can obtain an inexpensive humidity sensor with excellent initial characteristics and reliability.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図および第2図は本発明によって得た湿度センサの
一例を示すもので第1図は平面図、第2図は側面図、第
3図はガラスフリット添加糸−変化招待性曲線図、第4
図はガラス7リツト添加it−ヒスリテシス特性曲線図
、第5図はガラス7すノ  ト 膠刀11 上ス − 
30 %RHの湿& 変化ハら特″こL田ノ烙星 図 
、第6図はガラスフリット冷加1−50%RHの湿度変
化率特注曲線図、第7図はガラス7リツト添力11ji
t −’i’ O%RRの謙度変格準特性曲庫図、第8
図はガラスフリットか別置−90%RI(の湿炭変化串
狩性曲線図である。 (ジー一−−一−−−感湿菓子 (2a ) I 2b )−−−−−−−一電極特許出
願人 マルコン竜子株式会社 第1図 第3図 0”う乙7ソ・・/ト己欝Dl]1計(東量%第2図 第4図 〉          か゛ラース7す、/トq餡u0
% (句り1f4)第S図 0.5   /  35   l015   z。 IJ゛′ラス1リットシ茄カロ重(争qヱ)第7図 0.5  1 35 40  15  20力゛ラス−
フリ、ットシ都、ml匈11≠)ty゛−1スフ+)=
trQ77o 蓋([!!/、)第8図
1 and 2 show an example of a humidity sensor obtained according to the present invention. FIG. 1 is a plan view, FIG. 2 is a side view, and FIG. 3 is a glass frit-added yarn-change invitation curve diagram. Fourth
The figure is a graph of glass 7 addition it-hysteresis characteristic curve.
Humidity & change of 30%RH special feature
, Figure 6 is a custom-made curve diagram of the humidity change rate of glass frit cooling 1-50% RH, Figure 7 is a diagram of glass frit cooling 1-50% RH, Figure 7 is glass frit addition 11ji
Humility plagal quasi-characteristic curve diagram of t-'i' O%RR, No. 8
The figure is a wet charcoal change skewering property curve diagram of glass frit or separate -90% RI. Electrode patent applicant Marcon Ryuko Co., Ltd. Fig. 1 Fig. 3 Fig. 0 "U 7 so.../Tokyo Dl] 1 total (Total amount % Fig. 2 Fig. 4) u0
% (phrase 1f4) Figure S 0.5 / 35 l015 z. IJ゛'Las 1 Lit Shikalo Heavy (Contest) Fig. 7 0.5 1 35 40 15 20 Force゛Las-
Furi, Toshi City, ml匈11≠)ty゛-1suf+)=
trQ77o Lid ([!!/,) Fig. 8

Claims (1)

【特許請求の範囲】[Claims] m化ルテニウムに東組比で5i022゜6 :PbO3
,4: MgOO,2:  Al2O31,0ZrO2
2,8の配合比率からなる′ガラスフリット1戊分を全
患鈑に苅して1〜10止蓋%姫刀口した曖化ルテニウム
ペーストを感湿素子−19,裂III+]面に睨1jけ
’amを形成したことを特徴とする湿度センサの製造方
法。
Ruthenium mide with Azuma ratio: 5i022゜6:PbO3
,4: MgOO,2: Al2O31,0ZrO2
Spread 1 portion of glass frit with a blending ratio of 2.8 on the entire affected board and apply 1 to 10% fuzzy ruthenium paste on the surface of the moisture-sensitive element-19, fissure III+. A method for manufacturing a humidity sensor, characterized in that 'am is formed.
JP58048515A 1983-03-22 1983-03-22 Method of producing moisture sensor Granted JPS59197102A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58048515A JPS59197102A (en) 1983-03-22 1983-03-22 Method of producing moisture sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58048515A JPS59197102A (en) 1983-03-22 1983-03-22 Method of producing moisture sensor

Publications (2)

Publication Number Publication Date
JPS59197102A true JPS59197102A (en) 1984-11-08
JPH0122965B2 JPH0122965B2 (en) 1989-04-28

Family

ID=12805499

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58048515A Granted JPS59197102A (en) 1983-03-22 1983-03-22 Method of producing moisture sensor

Country Status (1)

Country Link
JP (1) JPS59197102A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002357581A (en) * 2001-05-31 2002-12-13 Ngk Spark Plug Co Ltd Humidity sensor

Also Published As

Publication number Publication date
JPH0122965B2 (en) 1989-04-28

Similar Documents

Publication Publication Date Title
US4464647A (en) Humidity sensor made of metal oxide
JPS59197102A (en) Method of producing moisture sensor
US4509034A (en) Gas sensor
JPS5897801A (en) Moisture sensitive element
EP0123385B1 (en) Humidity-sensitive resistive element
KR970010985B1 (en) Resistor paste & its use
JPS58166701A (en) Method of producing humidity sensitive element
EP0115953A2 (en) Gas sensor
JPS58141501A (en) Moisture sensitive element
JPS6214921B2 (en)
JPS6133374B2 (en)
JPS6322441B2 (en)
JPS6161241B2 (en)
JPS6145181B2 (en)
JPS60160102A (en) Moisture sensitive resistance element
JPS6317205B2 (en)
JPS58131701A (en) Moisture sensitive element
JPH0552795A (en) Humidity sensitive element
JPS5947702A (en) Moisture sensitive element and method of producing same
JPS6317203B2 (en)
JPS60116101A (en) Moisture sensitive element
JPS6236173B2 (en)
JPS5987348A (en) Combustible gas detecting element
JPS5999342A (en) Gas detecting element
JPS6317207B2 (en)