JPS59195838A - Processing tube device - Google Patents

Abstract

PURPOSE:To enable the automation of all processes carried out in the device as well as the interlocking operation with other manufacturing processes by providing a transporting device for carrying in semiconductor wafers, a flat wafer path surface, a carrier gas injection path, a reactive gas introducing pipe, a heater and a transporting device for transporting and containing the semiconductor wafers after the treatment. CONSTITUTION:A semiconductor wafer 1 to be treated is transferred on a belt conveyor 18 from a carrier 2 by use of an usual feeder and is introduced in an entrance of a processing tube 11. The semiconductor wafer 1 introduced in the processing tube 11 is transported toward an exit gradually by the carrier gas such as nitrogen gas or argon gas which is injected from carrier gas injection pathes 14... whereas the wafer is subjected to the predetermined treatment such as impurity diffusion by the reactive gas introduced from a reactive gas introducing pipe 15. Thus, the semiconductor wafer 1 transported to the exit of the processing tube 11 after the predetermined treatment is carried to a carrier 2' by a belt conveyor and is contained in the carrier 2' by an usual means.

Description

DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a process tube apparatus for performing impurity diffusion and thermal oxidation on semiconductor wafers when manufacturing semiconductor devices.

[Technical background of the invention]

The manufacture of semiconductor devices includes the steps of thermally diffusing impurities into the semiconductor wafer and thermally oxidizing the surface of the semiconductor wafer with gold. These steps have conventionally been carried out using a process tube apparatus as shown in FIG.

First, a semiconductor wafer 1 to be processed is placed on a carrier 2
It is prepared while being stored inside.

Then, the semiconductor wafers 1 are transferred onto the quartz boat 3 in a state where tens to hundreds of wafers are stood upright.

Semiconductor sea urchin heart built on quartz date 3
.are simultaneously introduced into the process tube device j in this state and subjected to a predetermined treatment.

The conventional process team device 4 has a VCVf as shown in the figure.
A reaction gas introduction pipe 8 is connected to a gross tube made of a TFT-shaped quartz tube. Then, while introducing all reaction gases such as impurity gases through the inlet tube 8, the semiconductor wafers 1 are inserted into the process tube 5 at a constant speed while standing upright on the quartz boat 3, and the center of the tube 5 is After leaving it for several minutes, it was pulled out again at a constant speed to the insertion port to perform predetermined processes such as diffusion of impurities.

The above-mentioned conventional processing tube processing method is called batch processing.

[Problems with background technology]

As mentioned above, since the conventional process tube apparatus requires batch processing, it is difficult to fully automate the processing in the process tube apparatus, and there are problems in that the cost is high.

On the other hand, in most of the other manufacturing processes for manufacturing semiconductor devices, the semiconductor wafer 1 is directly placed on the line from the carrier 2, and the predetermined treatment is performed while it is being collected in another carrier. Method, monthly IJ, so-called career-to-career
This is done in a carrier format. Therefore, if processes such as impurity diffusion are performed using conventional process tube equipment that requires batch processing, it is difficult to combine or link with other manufacturing processes, and the process tube process must be performed independently. There was a problem with not doing it.

[Purpose of the invention]

The present invention has been made in view of the above circumstances, and enables full automation of processes such as impurity diffusion and thermal oxidation, which are performed in a two-process team when manufacturing semiconductor devices, as well as other manufacturing processes. A process team that enables full coordination with
The purpose of this project is to provide a

[Summary of the invention]

A process tube apparatus according to the present invention includes a carrier for carrying semiconductor wafers from a carrier containing semiconductor wafers to be processed into an inlet of a process tube disposed substantially horizontally, and a flat wafer passage surface formed on the lower inner wall of the process nave;
A carrier gas jetting path is formed to be open on the wafer passage surface and transports the semiconductor wafer from the process tube inlet to the process tube exit by jetting and ejecting carrier gas obliquely toward the process tube exit. and a reaction gas introduction tube for introducing a reaction gas into the process tube in order to perform a predetermined process on the semiconductor wafer;
The present invention is characterized by comprising a heater for heating the process nave to a predetermined temperature, and a conveyor for conveying and storing the processed semiconductor wafer from the outlet of the process tube into a carrier.

Because predetermined processing is carried out at a high temperature of around 100° C. within the Zorocess tube apparatus, ordinary conveyance means such as a belt conveyor cannot be used to convey the semiconductor wafer within the process chamber. This is,
This is the main reason why conventional process processing equipment had to be configured as a batch processing system.

In the present invention, a flat wafer passage is provided on the inner surface of the process tube, and carrier gas is ejected from the passage surface, thereby making it possible to transport semiconductor wafers within the process tube. This is a process tubular structure.

Hiko, of course, as the carrier gas in the present invention, a chemically inert gas such as nitrogen gas or inert gas such as argon must be used.

[Embodiments of the invention]

Hereinafter, one embodiment of the present invention will be explained with reference to FIG.

FIG. 1 is an explanatory diagram of a process tube device according to an embodiment of the present invention. In the figure, reference numeral 11 indicates a process cube made of quartz and arranged substantially horizontally. The gloss tube 11 has a square cross section, and its lower, flat inner surface forms a wafer passageway 12. A carrier gas introduction pipe 13 is connected to the process tube L, and the carrier gas introduction pipe 13 communicates with a large number of carrier gas ejection passages 14 provided on the bottom wall of the process tube 11. This carrier gas ejection path is the wafer path 12.
The tube 11 is opened at an angle and is formed obliquely toward the exit direction of the tube 11. Also, process tube 1
A reaction gas introduction pipe 15 is connected to the reaction gas introduction pipe 15, and a reaction gas introduction passage 16 communicating with the introduction pipe 15 is formed on the inner surface K1ji of the clay wall of the process chamber L. Furthermore, a gas exhaust pipe 17 is provided at the outlet of the process tube 11. And outside of the puss f u b 7 u
C is provided with a lining pipe and a heater (not shown), as in the conventional process cheap apparatus. On the other hand, entrance 1 of process team 11! Belt conveyor 18 on l
is provided, and a belt conveyor 19 is provided on the exit side.

When performing a predetermined process using the process team apparatus having the above configuration, the semiconductor wafer to be processed 1
is transferred from the carrier 2 onto the belt conveyor 18 using a conventional feeder, and introduced by the belt conveyor 18 into the inlet of the process tube ±J. gross tube L
The semiconductor Ueno-1 introduced into the chamber is nitrogen gas ejected from the carrier gas ejection passage 14.

It is sequentially transported toward the exit by a carrier gas such as argon gas, and during that time, a predetermined process such as impurity diffusion is performed by the reaction gas introduced from the reaction gas introduction pipe 15. Semiconductor wafer 1', which has thus been subjected to predetermined processing and transported to the exit of process tube L, is carried by belt conveyor 19 to carrier 2', and is housed in carrier 2' by conventional means.

As described above, according to the process chip apparatus of this embodiment, predetermined processes such as semiconductor wafer IK impurity diffusion and thermal oxidation can be performed using a so-called carrier-to-carrier method rather than a conventional patch processing method. I can do it. Therefore, it is possible to fully automate the processing in the Process Cheeve equipment LL, unlike other J! ! It also facilitates integration with the manufacturing process.

As a result, it is possible to greatly contribute to the realization of automation throughout the entire manufacturing process 8 of semiconductor devices.

[A fruit of invention]

As detailed above, according to the present invention, carrier-to-carrier
It is possible to provide a process-cheap device that can be fully automated using a carrier method and can be connected continuously with other manufacturing processes.

[Brief explanation of drawings]

FIG. 1 is an explanatory diagram showing a conventional process tube apparatus and a processing type M using the same, and FIG. 2 shows a process tube apparatus according to an embodiment of the present invention and a processing form of semiconductor wafers using the same. It is an explanatory diagram. L"...Process tube, 12...Wafer passage, 13...Carrier gas introduction tube, 14...Carrier gas ejection tube, 15...Reaction gas introduction tube, 16...Reaction gas introduction path , 17... Gas exhaust pipe, 18° 19...
·belt conveyor.

Claims (1)

[Claims] a carrier for transporting semiconductor wafers from a carrier containing semiconductor wafers to be processed into an inlet of a process tube disposed approximately horizontally; a flat wafer passage surface; and an opening formed in the wafer passage surface;
Carrier gas '1 diagonally towards the process tube exit direction.
A carrier gas outlet path for transporting the semiconductor wafer from the process tube inlet to the process tube outlet by jetting it out, and a reaction gas introduction pipe for introducing the reaction gas into the 7° process tube to perform a predetermined process on the semiconductor wafer. and a heater for heating the process tube to a predetermined temperature, and a conveyor for conveying and storing the processed semiconductor wafer from the outlet of the process tube into a carrier. , process team equipment.