JPS5919412A - Microwave oscillator - Google Patents

Microwave oscillator

Info

Publication number
JPS5919412A
JPS5919412A JP12834582A JP12834582A JPS5919412A JP S5919412 A JPS5919412 A JP S5919412A JP 12834582 A JP12834582 A JP 12834582A JP 12834582 A JP12834582 A JP 12834582A JP S5919412 A JPS5919412 A JP S5919412A
Authority
JP
Japan
Prior art keywords
oscillation
waveguide
transistor
harmonic
output
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12834582A
Other languages
Japanese (ja)
Inventor
Motoo Mizumura
水村 元夫
Kenzo Wada
賢三 和田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP12834582A priority Critical patent/JPS5919412A/en
Publication of JPS5919412A publication Critical patent/JPS5919412A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/18Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance
    • H03B5/1864Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a dielectric resonator
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2202/00Aspects of oscillators relating to reduction of undesired oscillations
    • H03B2202/08Reduction of undesired oscillations originated from the oscillator in circuit elements external to the oscillator by means associated with the oscillator
    • H03B2202/082Reduction of undesired oscillations originated from the oscillator in circuit elements external to the oscillator by means associated with the oscillator by avoiding coupling between these circuit elements
    • H03B2202/086Reduction of undesired oscillations originated from the oscillator in circuit elements external to the oscillator by means associated with the oscillator by avoiding coupling between these circuit elements through a frequency dependent coupling, e.g. which attenuates a certain frequency range

Abstract

PURPOSE:To make the characteristics stable and to simplify the constitution, by using a cut-off waveguide at an output terminal for preventing the abnormal oscillation. CONSTITUTION:An output of a basic wave oscillator 1 includes many harmonics because of the nonlinearity of a transistor (TR)3. In desiring to pick up the N-th harmonic, a waveguide 21 to cut off frequencies up to the (N-1)th harmonics is fitted to an output terminal of the basic wave oscillator 1. Further, a ridge 22 is provided to the cut-off waveguide 21 in order to attain excellent coupling to the N-th harmonic. It is possible to give a DC bias to the TR3 by fitting the ridge 22 floated from the waveguide 21 in terms of DC. Thus, no abnormal oscillation is produced, because the undesirable coupling is excluded in this way.

Description

【発明の詳細な説明】 本発明は発振逓倍型マイクロ波発振装置、すなわち発振
用トランジスタを用いたマイクロ波発振器の出力からこ
の発振器の発する基本発振周波数のN倍(Nは2以上の
整数)の周波数の信号を取り出す発振逓倍型マイクロ波
発振装置に関するものである。
Detailed Description of the Invention The present invention is an oscillation multiplication type microwave oscillator, that is, a microwave oscillator using an oscillation transistor. The present invention relates to an oscillation multiplication type microwave oscillator that extracts a frequency signal.

従来の発振逓倍型マイクロ波発振装置は、あとに詳しく
説明するが9発振用トランジスタを用いた基本波発振器
と、逓倍用ダイオードなどを用いた逓倍用回路とを主体
としているが、逓倍器を使用していることと、との逓倍
器を基本波発振器と直結していることと、基本波発振器
の発振用トランジスタのバイアス供給が貫通コンデンサ
を用いていることなどの理由により、構成が複雑である
ばかりでなく特性が不安定になるなど、多くの欠点を有
していた。
Conventional oscillation multiplication type microwave oscillators mainly consist of a fundamental wave oscillator using nine oscillation transistors and a multiplication circuit using multiplier diodes, etc., as will be explained in detail later. The configuration is complicated because the multiplier of and is directly connected to the fundamental wave oscillator, and the bias supply for the oscillation transistor of the fundamental wave oscillator uses a feedthrough capacitor. It also had many drawbacks, such as unstable characteristics.

したがって本発明の目的は、構成が簡単で而も特性の安
定な発振逓倍型マイクロ波発振装置を提供しようとする
ものである。
Therefore, an object of the present invention is to provide an oscillation multiplication type microwave oscillator which has a simple structure and stable characteristics.

本発明によれば1発振用トランジスタを用いたマイクロ
波発振器の出力からこの回路の発する基本発振周波数の
第N次高調波周波数(Nは2以上の整数)の信号を取り
出す発振逓倍型マイクロ波発振装置において、前記第N
次高調波周波数の信号を取り出す手段を、前記基本発振
周波数を含む第(N−1)次高調波周波数までの周波数
に対してカットオフになる出力取出し用導波管および第
N次高調波周波数の整合をとるためのりツノから成るカ
ットオフ導波管で構成し、且つ前記発振用トランジスタ
のD C−Jイアスを前記リッジを介して供給する手段
を設けて成ることを特徴とするマイクロ波発振装置が得
られる。
According to the present invention, an oscillation multiplication type microwave oscillation that extracts a signal at the Nth harmonic frequency (N is an integer of 2 or more) of the fundamental oscillation frequency generated by this circuit from the output of a microwave oscillator using a single oscillation transistor. In the apparatus, the Nth
The means for extracting the signal of the harmonic frequency is an output extraction waveguide that is cut off for frequencies up to the (N-1) harmonic frequency including the fundamental oscillation frequency, and the Nth harmonic frequency. Microwave oscillation characterized by comprising a cut-off waveguide made of glue horns for matching, and further comprising means for supplying the DC-J ear of the oscillation transistor via the ridge. A device is obtained.

次に図面を参照して詳細に説明する。Next, a detailed explanation will be given with reference to the drawings.

第1図は従来の逓倍型マイクロ波発振装置の構成を示す
一部断面図である。第1図において、■は金属シャーシ
で囲まれた基本波発振器、2は周波数安定化の為の高Q
共振器(第1図の構成例ではTEoIδモードの誘電体
共振器の例を上げているが、金属キャビティでもかまわ
ない)、3は発振用のトランソスタ(Siパイ醪−ラト
ランジスタ又はGaAs FET ) + 4は前記高
Q共振器と発振用トランジスタを電磁界的に結合させる
為の結合用ストリップライン、5,6はそれぞれ前記発
振用トランゾスタ3のベース電極リード線とエミッタ電
極り、−ド線(Stバイポーラ]・ランジスタの場合)
又はケ゛−ト電極リード線とソース電極リード線、7゜
8は前記発振用トランジスタ3にDCバイアスを供給す
る為の貫通コンデンサ、9は高調波成分を発生させる為
の逓倍器、10は逓倍用ダイオード。
FIG. 1 is a partial cross-sectional view showing the configuration of a conventional multiplication type microwave oscillator. In Figure 1, ■ is a fundamental wave oscillator surrounded by a metal chassis, and 2 is a high Q for frequency stabilization.
resonator (in the configuration example shown in FIG. 1, a TEoIδ mode dielectric resonator is used, but a metal cavity may also be used); 3 is an oscillation transistor (Si transistor or GaAs FET) + 4 is a coupling strip line for electromagnetically coupling the high-Q resonator and the oscillation transistor; 5 and 6 are the base electrode lead wire and emitter electrode lead wire of the oscillation transistor 3, and the negative wire (St bipolar]/transistor)
or a gate electrode lead wire and a source electrode lead wire; 7.8 is a feedthrough capacitor for supplying DC bias to the oscillation transistor 3; 9 is a multiplier for generating harmonic components; 10 is for multiplication. diode.

11は高調波成分から必要な第N法高調波信号をとり出
す為のフィルターを構成する共振棒、12は基本波発振
器1と逓倍器9とを電磁的に結合するカップリング用ア
ンテナ、13は逓倍用ダイオード10にバイアスをかけ
る為の貫通コンデンサである。
11 is a resonant rod that constitutes a filter for extracting the necessary Nth modulus harmonic signal from the harmonic components; 12 is a coupling antenna that electromagnetically couples the fundamental wave oscillator 1 and the multiplier 9; and 13 is a coupling antenna. This is a feedthrough capacitor for biasing the multiplier diode 10.

しかしながらこのような構成による従来のマイクロ波発
振装置では以下に示すような欠点がある。
However, the conventional microwave oscillator having such a configuration has the following drawbacks.

その第1は、逓倍器9を使用している為に、逓倍用ダイ
オード10.そのダイオードの保持機構。
The first is that since the multiplier 9 is used, the multiplier diode 10. A holding mechanism for that diode.

およびフィルター共振棒11等の機構部品が必要となり
、構成が複雑であると共に価格も上昇することである。
In addition, mechanical parts such as the filter resonance rod 11 are required, which complicates the structure and increases the price.

又、逓倍用ダイオードIOのバイアス供給回路による低
周波(例えば100〜300MHz位)の不要発振等が
生じやすく、これを阻止する為に構成が複雑となり、調
整も難しくなる。
Further, unnecessary oscillations at low frequencies (for example, about 100 to 300 MHz) are likely to occur due to the bias supply circuit of the multiplier diode IO, and to prevent this, the configuration becomes complicated and adjustment becomes difficult.

その第2は、基本波発振回路1と逓倍器9とが直結され
ている為、基本波発振器1の負荷インピーダンスは逓倍
器9の入力インピーダンスとなり。
Second, since the fundamental wave oscillator circuit 1 and the multiplier 9 are directly connected, the load impedance of the fundamental wave oscillator 1 becomes the input impedance of the multiplier 9.

両者の間にはインピーダンス変動に対して緩衝効果がな
い為に、逓倍器9のインピーダンス変動が基本波発振器
1の負荷変動となることである。これにより発振起動特
性、温度変化による周波数変動、出力レベル変動等が不
安定になりやすい。
Since there is no buffering effect against impedance fluctuations between the two, impedance fluctuations of the multiplier 9 become load fluctuations of the fundamental wave oscillator 1. As a result, oscillation start-up characteristics, frequency fluctuations due to temperature changes, output level fluctuations, etc. tend to become unstable.

その第3は1発振用トランジスタ3の電極6(Siバイ
ポーラトランジスタの場合はエミッタ電極、 GaAs
 FETの場合にはソース電極)にDCバイアスを供給
する為の貫通コンデンサ8のショート面位置が不確定と
なりやすく、また貫通コンデンサ8と電極6の間の導体
線14の太さ、長さ1位(5) 置等により発振出力レベルが大きく変化し易く。
The third electrode is the electrode 6 of the first oscillation transistor 3 (emitter electrode in the case of a Si bipolar transistor, GaAs
In the case of a FET, the short-circuit surface position of the feedthrough capacitor 8 for supplying DC bias to the source electrode (source electrode) is likely to be uncertain, and the thickness and length of the conductor wire 14 between the feedthrough capacitor 8 and the electrode 6 are important. (5) The oscillation output level tends to change greatly depending on the location, etc.

又時としてこのバイアス供給用の貫通コンデンサと導体
線が原因で異常発振を生ずることである。
Also, abnormal oscillations sometimes occur due to the feedthrough capacitor and conductor wire for bias supply.

又、温度変化により貫通コンデンサ8の容量が大きく変
化することがあり、この場合も異常発振やマイクロ波の
外部への漏れ等の原因となる。
Further, the capacitance of the feedthrough capacitor 8 may change greatly due to temperature changes, which also causes abnormal oscillation and leakage of microwaves to the outside.

第2図は本発明の一実施例の構成を示す一部断面図であ
り、(a)は上部を除去して上から見た図。
FIG. 2 is a partial sectional view showing the configuration of an embodiment of the present invention, and (a) is a view seen from above with the upper part removed.

(b)は正面からの断面図をあられしている。第2図に
おいて、第1図と同一機能のものには同一参照数字を付
しである。そして出力回路20は第1図の逓倍器9に代
わるものである。この出力回路20において、21は本
発明に使用している出力取出し用の導波管で、導波管の
入力側が基本波発振周波数及び不要低次高調波信号に対
してカットオフとなる様な形状のものである。なおこの
場合図にtで示した長さが基本波発振周波数及び不要低
次高調波に対してカットオフサイズとなっている。
(b) shows a sectional view from the front. In FIG. 2, parts with the same functions as those in FIG. 1 are given the same reference numerals. The output circuit 20 replaces the multiplier 9 in FIG. In this output circuit 20, 21 is a waveguide for output extraction used in the present invention, and the input side of the waveguide is cut off for the fundamental oscillation frequency and unnecessary low-order harmonic signals. It is of shape. In this case, the length indicated by t in the figure is the cutoff size for the fundamental wave oscillation frequency and unnecessary low-order harmonics.

22は」二記の出力取出し用の導波管21に希望第N法
高調波信号の整合をとる為のりツノであり。
Reference numeral 22 is a glue horn for matching the desired N-th modulus harmonic signal to the waveguide 21 for output extraction described in "2".

(6) トランジスタ3の電極6が接続されている。このリッジ
22は絶縁シート23及び絶縁用ブッシング24により
出力導波管21とは直流的に浮かされているので、外部
から端子25.リッツ22を通してトランジスタの電極
6にDCバイアスを印加することができる。以上のよう
な構成によりトランジスタ3の非線形作用により発生し
た高調波成分から必要とする第2次高調波をとり出すこ
とができる。なお基本波発振器1は第1図のものと若干
具る点もあるが、ここでは同じ参照数字を用いている。
(6) Electrode 6 of transistor 3 is connected. This ridge 22 is floated in direct current relation to the output waveguide 21 by the insulating sheet 23 and the insulating bushing 24, so that the terminal 25. A DC bias can be applied to the electrode 6 of the transistor through the Litz 22. With the above configuration, the necessary second harmonic can be extracted from the harmonic component generated by the nonlinear action of the transistor 3. Although the fundamental wave oscillator 1 has some features as the one shown in FIG. 1, the same reference numerals are used here.

上記のように1本発明による逓倍型マイクロ波発振装置
は、基本波発振周波数および不要低次高調波信号に対し
力、トオフとなる形状の出力取出し用導波管21と、希
望第N法高調波信号で出力導波管に整合するためのりツ
ノ22と、絶縁シート23およびブ、シー24を用いた
端子部25とから構成されている。従って機構的に従来
装置よりはるかに簡単であると共に、逓倍用ダイオード
およびそのバイアス供給回路によって生じるような異常
発振が起らない(以上先述の第1の欠点に対する改善′
)。
As described above, the multiplier type microwave oscillator according to the present invention includes a waveguide 21 for output extraction having a shape that provides power and to-off for the fundamental wave oscillation frequency and unnecessary low-order harmonic signals, and a desired N-th modulus harmonic. It consists of a glue horn 22 for matching the wave signal to the output waveguide, and a terminal portion 25 using an insulating sheet 23 and a plate and a plate 24. Therefore, it is mechanically much simpler than the conventional device, and abnormal oscillations such as those caused by the multiplier diode and its bias supply circuit do not occur.
).

¥)だ出力回路20と基本波発振器1の間はカットオフ
導波管により電磁界的に分離されており。
The output circuit 20 and the fundamental wave oscillator 1 are electromagnetically separated by a cutoff waveguide.

リッツ22により出力回路と結合しているのは基本発振
器1の第N法高調波信号成分であり、基本発振器1の基
本発振レベルと第N法高調波信号レベルとの間には2d
B(T、〉0)の変換損失があるので、基本波発振器]
と出力回路20の間には2dBの減衰器が入った事にな
り、出力回路20のインピーダンス変動が基本波発振器
1に与える影響が大幅に改善される。たとえば第2次高
調波をとり出す場合を例にとると、基本波発振レベルと
第2次高調波レベルとのレベル差(即ち変換損失)は約
4〜6 dB程度であるので、4〜6 dBの減衰器が
出力回路20と基本波発振器1との間に入った事と等価
となり、出力回路20のインピーダンス変動に対する緩
衝効果が得られ、基本発振器1の発振起動特性温度変化
による周波数変動、出力レベル変動等が改善される(以
上筒2の欠点に対する改善)。
What is coupled to the output circuit by the Litz 22 is the Nth modal harmonic signal component of the fundamental oscillator 1, and there is a distance of 2d between the fundamental oscillation level of the fundamental oscillator 1 and the Nth modal harmonic signal level.
Since there is a conversion loss of B(T,〉0), the fundamental wave oscillator]
Since a 2 dB attenuator is inserted between the output circuit 20 and the output circuit 20, the influence of impedance fluctuations of the output circuit 20 on the fundamental wave oscillator 1 is greatly improved. For example, when extracting the second harmonic, the level difference (i.e., conversion loss) between the fundamental wave oscillation level and the second harmonic level is about 4 to 6 dB, so This is equivalent to inserting a dB attenuator between the output circuit 20 and the fundamental wave oscillator 1, which provides a buffering effect against impedance fluctuations in the output circuit 20, and reduces frequency fluctuations due to temperature changes in the oscillation starting characteristics of the fundamental oscillator 1. Output level fluctuations, etc. are improved (improvements for the above drawbacks of cylinder 2).

更に、トランジスタ3の電極6に対するDCバイアス供
給は端子25とリッジ22を通して外部より行っている
。リッジ22本体は絶縁シート23により外部導波管2
6とDC的に浮いているが。
Furthermore, DC bias is supplied to the electrode 6 of the transistor 3 from outside through the terminal 25 and the ridge 22. The ridge 22 main body is connected to the external waveguide 2 by an insulating sheet 23.
6, which is floating in terms of DC.

又同時にこの絶縁シート23を誘電体として゛リッツ2
2と外部導波管26により容量を構成しておシ、マイク
ロ波的にショート面となっている。従ってマイクロ波的
ショート面位置が確定しており。
At the same time, this insulating sheet 23 is used as a dielectric material.
2 and an external waveguide 26 constitute a capacitor, which is a short surface in terms of microwaves. Therefore, the microwave short surface position is determined.

ショート面とトランジスタ3の距離が常に一定でで、温
度変化による異常発振やマイクロ波の漏れの増加等は従
来装置における貫通コンデンサ使用時に比べて大幅に改
善される。又、従来例にある導体線14を使用していな
いので、線の太さ、長さ1位置等に起因する特性変化も
ない(以上筒3の欠点に対する改善)。
The distance between the short surface and the transistor 3 is always constant, and abnormal oscillations and increases in microwave leakage due to temperature changes are greatly improved compared to when feedthrough capacitors are used in conventional devices. Furthermore, since the conductor wire 14 in the conventional example is not used, there are no changes in characteristics due to wire thickness, length, position, etc. (improvement over the above drawbacks of the tube 3).

以上説明したように1本発明によれば従来装置の持つ多
くの欠点を改善することが可能となった。
As explained above, according to the present invention, it has become possible to improve many of the drawbacks of conventional devices.

(9)(9)

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来のマイクロ波発振装置の一構成例の一部断
面図、第2図は本発明の一実施例の構成例の一部断面図
であって(a)は上から見た図、(b)は正面から見た
図である。 記号の説明=1は基本波発振器、3は発振用トランジス
タ、7と8は貫通コンデンサ、9は逓倍器、10は逓倍
用ダイオード、11は共振棒。 13は貫通コンデンサ、20は出力回路(カットオフ導
波管)、21は出力取出用導波管、22はリッツ、25
は端子、26は外部導波管をそれぞれあられしている。 (10)
FIG. 1 is a partial sectional view of a configuration example of a conventional microwave oscillation device, and FIG. 2 is a partial sectional view of a configuration example of an embodiment of the present invention, in which (a) is a view seen from above. , (b) are views seen from the front. Explanation of symbols = 1 is a fundamental wave oscillator, 3 is an oscillation transistor, 7 and 8 are feedthrough capacitors, 9 is a multiplier, 10 is a multiplier diode, and 11 is a resonant bar. 13 is a feed-through capacitor, 20 is an output circuit (cutoff waveguide), 21 is a waveguide for output extraction, 22 is a Ritz, 25
2 denotes a terminal, and 26 denotes an external waveguide. (10)

Claims (1)

【特許請求の範囲】 1、発振用トランジスタを用いたマイクロ波発振器の出
力からこの回路の発する基本発振周波数の第N次高調波
周波数(Nは2以上の整数)の信号を取り出す発振逓倍
型マイクロ波発振装置において、前記第N次高調波周波
数の信号を取り出する出力取出し用導波管および第N次
高調波周波数の整合をとるためのりッジから成るカット
オフ導波管で構成し、且つ前記発振用トランジスタのD
Cバイアスを前記リッツを介して供給する手段を設けて
成ることを特徴とするマイクロ波発振装置0 以下余白
[Claims] 1. An oscillation multiplication type micro that extracts a signal at the Nth harmonic frequency (N is an integer of 2 or more) of the fundamental oscillation frequency generated by this circuit from the output of a microwave oscillator using an oscillation transistor. The wave oscillation device comprises a cut-off waveguide consisting of an output extraction waveguide for extracting the signal of the Nth harmonic frequency and a ridge for matching the Nth harmonic frequency, and D of the oscillation transistor
A microwave oscillation device characterized by comprising means for supplying a C bias through the Litz.
JP12834582A 1982-07-24 1982-07-24 Microwave oscillator Pending JPS5919412A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12834582A JPS5919412A (en) 1982-07-24 1982-07-24 Microwave oscillator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12834582A JPS5919412A (en) 1982-07-24 1982-07-24 Microwave oscillator

Publications (1)

Publication Number Publication Date
JPS5919412A true JPS5919412A (en) 1984-01-31

Family

ID=14982507

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12834582A Pending JPS5919412A (en) 1982-07-24 1982-07-24 Microwave oscillator

Country Status (1)

Country Link
JP (1) JPS5919412A (en)

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