JPS59190382A - Formation of thin metallic film - Google Patents

Abstract

PURPOSE:To eliminate the need for intricate pretreatment and the control of working environment and to form a thin metallic film having good quality by forming successively two layers contg. respectively a noble metal element and a ferrous element on the surface of a base body in a vacuum or inert gaseous atmosphere then plating the 3rd layer on the same or resembling metal as to the element of the 2nd layer or the alloy thereof by a wet process. CONSTITUTION:A thermoplastic base body 1 which is molded and cleaned is installed in the bell-jar of a vacuum device and thereafter the inside of the bell-jar is evacuated to a prescribed degree of vacuum and gaseous Ar is introduced to a specific degree of vacuum. While the degree of vacuum is maintained, platinum is deposited thereon by a sputtering method using the high frequency of the conventional method in combination to form the 1st layer 2 having 100Angstrom thickness on the surface of the body 1. The inside of the bell-jar is then maintained at the above-mentioned degree of vacuum or below and the 2nd layer 3 of SUS-316 having 1,500Angstrom thickness is laminated and formed on the layer 2 by an ion plating method. The base body 1 is thereafter installed in a preliminarily prepd. sulfamic acid Ni bath and is plated at a prescribed current density to form the 3rd layer 4 having 0.2mm. thickness, by which good thin metallic film is formed.

Description

DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a method for forming a thin metal film that is in close contact with a substrate and is also peelable from the substrate.

[Technical background of the invention and its problems]

It is known to use a metal thin film formed on a substrate surface processed into a predetermined shape, and to use this thin film by peeling it off from the substrate. Conventionally, such thin films have been formed by applying a release agent to the substrate surface or forming a thin conductive film using a silver mirror reaction, and then plating copper, nickel, etc. thereon.

However, this method of formation requires degreasing and washing with water.

It required many steps such as surface activation, silver solution and reducing solution treatment, and there were problems in the management of pretreatment conditions 1 and work environment.

[Purpose of the invention]

It is an object of the present invention to provide a method by which a high-quality metal thin film can be formed without being burdened by work environment management.

[Summary of the invention]

After forming a first layer M made of at least one noble metal element on a substrate surface processed into a predetermined shape in a vacuum or a vacuum apparatus containing an inert gas, at least one ferrous element or an alloy thereof is formed on the first layer. A second layer consisting of one type of material is formed. After the first layer is formed, the second layer is preferably formed by an ion plating method in the vacuum apparatus without taking it out of the vacuum apparatus.

Next, a third layer made of the same or similar metal or alloy as the second layer constituent member is formed on this second layer by wet plating. This wet plating method is initially 0.1~0.5A
/dm2 and then, for example, IA
It is preferable to use a large current density of about /drn2 to increase the thickness of the film.

[Embodiments of the invention]

Hereinafter, the present invention will be described based on embodiments with reference to the drawings.

(Example 1) A thermoplastic plastic substrate (1) molded into a shape having convex portions as shown in the figure is thoroughly washed and then placed in a bell jar of a vacuum device. After reducing the pressure in this vacuum chamber and reaching 10' Torr,
Introduce argon gas and increase the degree of vacuum to 2 x 10 To
Make it rr. While maintaining this degree of vacuum, platinum was deposited using a sputtering method using high frequency in combination with the Hama method, and the platinum was deposited to a height of 10
A first layer (2) of 0x is formed on the substrate surface having the convex portions. In this case, it is preferable to perform this while rotating the base body (1). Next, while keeping the substrate (1) in the belljar and maintaining the degree of vacuum below 2 x 10'' Torr, a second layer (3) having a thickness of xsooi is laminated. , the above substrate (1) was taken out of the bell jar, placed in a sulfamino acid-based nickel bath that had been tightened, and heated at a current density of 0.1 A/dm'' at 2.
plating by increasing the current density to IA/dm" to form a third layer (4) with a thickness of 0.28,
A good metal thin film could be formed.

(Example 2) Using the same material and shape of the substrate as in Example 1, the first It made of platinum with a thickness of 2 ooi was prepared using the same method as in Experiment 1.
! Then, a second layer of the same thickness as in Example 1 and the same thickness as in Example 1 was formed. Form the third layer and apply a good metal thin layer 1:';
I was able to do B again.

However, when the thickness of the first layer is 300'k, the thickness of the third layer is 300'k.
During plating to form a layer, it peeled off from the target body, and an undesirable force was generated when a good product was obtained.

(Example 3) Implemented on 2=F body of the same material and shape as Example 1 f'll
Using the same method as in Example 1, a first layer of platinum with a thickness of 100 mm and a layer of stainless steel with a thickness of 2161 mm were formed, and then using the same plating bath as in Example 1, I RIK at a current density of 0.5 A/dm2
Plating was then carried out at a current density of IA/dm2 to form a third layer of 1N x 2mx, and a good metal thin film 6 could be formed.

However, when forming the third contact, initially 75＼0.6A/d
When plated with a current dense layer of m2, cracks occurred in the coating, and a good metal thin film could not be obtained.

(Example 4) 1) When forming fir, the first layer was formed using gold or silver instead of platinum, and then 2. Although a third layer was formed, almost the same results as in the case of platinum were obtained.

(Example 5) Using a substrate of the same material and shape as in Example 1, the degree of vacuum in the bell jar was set to 10 Torr, and then the degree of vacuum was 5
After depositing platinum while maintaining the pressure above 10'-3 Torr to form a first layer with a thickness of xooA, argon gas was introduced into the bell jar and a second layer was formed in the same manner as in Example 1. However, a third layer was further formed in the same manner, and a good metal thin film could be formed.

(Example 6) l Using a substrate of the same material and shape as in Example 1, introducing 9 elemental gas instead of argon gas, and forming a metal thin film in the same manner as in Example 5, good results were obtained. Ta.

〔Effect of the invention〕

As explained above in the embodiments, the present invention forms the first layer in a vacuum or in a vacuum device containing an inert atmosphere, so it does not require complicated pretreatment unlike conventional methods, and it It has become possible to easily form thin films with the same quality as thin films.

[Brief explanation of drawings]

The drawings are explanatory diagrams of one embodiment of the present invention. (1) Two substrates (2): 1st layer (3): 1st layer
2nd layer (4): 3rd layer agent patent attorney
Kensuke Noriyuki (and 1 other person)

Claims (3)

[Claims] (1) A method of forming a first layer made of at least one noble metal element on the surface of a substrate processed into a predetermined shape in a vacuum or a vacuum apparatus containing an inert gas; a method of forming a second layer made of at least one kind of said alloy; and a method of forming a third scrap made of the same or similar metal or alloy as said second layer on said second layer by wet plating. A method for forming a metal thin film, comprising: and. (2) The method for forming a metal thin film according to claim 1, wherein the second layer is formed in the vacuum apparatus in which the first layer was formed, following the formation of the 11th Fj. (3) The metal thin film according to claim 1, characterized in that the third layer is formed by first passing a low-density current and then passing a high-density current compared to the low-density current. Formation method. The metal thin film forming method according to claim 3, characterized in that: