JPS5918455U - Integral lens light emitting diode structure - Google Patents

Integral lens light emitting diode structure

Info

Publication number
JPS5918455U
JPS5918455U JP1983085903U JP8590383U JPS5918455U JP S5918455 U JPS5918455 U JP S5918455U JP 1983085903 U JP1983085903 U JP 1983085903U JP 8590383 U JP8590383 U JP 8590383U JP S5918455 U JPS5918455 U JP S5918455U
Authority
JP
Japan
Prior art keywords
light emitting
emitting diode
diode structure
lens light
integral lens
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1983085903U
Other languages
Japanese (ja)
Other versions
JPS6017910Y2 (en
Inventor
フレデリツク・デビツド・キング
アンソニ−・ジヨン・スプリングソ−プ
Original Assignee
ノ−ザン・テレコム・リミテツド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ノ−ザン・テレコム・リミテツド filed Critical ノ−ザン・テレコム・リミテツド
Publication of JPS5918455U publication Critical patent/JPS5918455U/en
Application granted granted Critical
Publication of JPS6017910Y2 publication Critical patent/JPS6017910Y2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of drawings]

第１図は通常のＬＥＤの断面図である。第２図及び第３
図は、本考案に従ったレンズ形成体の二つの変形を示す
第１図に類似した断面図である。 第４ａ図乃至第４ｅ図は、第２図のＬＥＤ構造体を形成
する一方法を示す断面図である。第５図は、第３図の形
のレンズ形成体を有するＬＥＤの平面図である。第６図
、第７図及び第８図は、ＬＥＤ構造体のもう一つの形を
示す断面図である。 １０・・・・・−発光源、１２．　１　ｅ、　　２９・
・・・・・レンズ、１４．２０・・・・・・サブストレ
ート、２３・・・・・・くぼみ。FIG. 1 is a cross-sectional view of a typical LED. Figures 2 and 3
The figure is a sectional view similar to FIG. 1 showing two variants of the lens forming body according to the invention. Figures 4a-4e are cross-sectional views illustrating one method of forming the LED structure of Figure 2. FIG. 5 is a plan view of an LED having a lens formation in the form of FIG. 3. FIG. 6, 7, and 8 are cross-sectional views showing another form of LED structure. 10...--light emitting source, 12. 1 e, 29・
...Lens, 14.20 ...Substrate, 23 ...Indentation.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 発行ダイオードおよびレンズ形成体からなり、該発光ダ
イオードは二重へテロ構造体として形成サレかつ一対の
コンファイニング層が側面に配置されたアクティブ層を
有する、発光装置において、該コンファイニング層の一
方の外面は非平面状でありこれによ−って該一方のコン
ファイニング層に凸レンズ形成体１３が形成され、該レ
ンズ形成体１３は該アクティブ層２５の発光領域１０と
整合していることを特徴とする発光装置。A light emitting device comprising a light emitting diode and a lens former, the light emitting diode having an active layer formed as a double heterostructure and flanked by a pair of confining layers, one of the confining layers. The outer surface is non-planar so that a convex lens formation 13 is formed in the one confining layer, and the lens formation 13 is aligned with the light emitting region 10 of the active layer 25. A light-emitting device.
JP1983085903U 1974-09-10 1983-06-07 Integral lens light emitting diode structure Expired JPS6017910Y2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CA208827 1974-09-10
CA208,827A CA1007736A (en) 1974-09-10 1974-09-10 Integral lens light emitting diode

Publications (2)

Publication Number Publication Date
JPS5918455U true JPS5918455U (en) 1984-02-04
JPS6017910Y2 JPS6017910Y2 (en) 1985-05-31

Family

ID=4101088

Family Applications (2)

Application Number Title Priority Date Filing Date
JP10659175A Pending JPS5152792A (en) 1974-09-10 1975-09-04
JP1983085903U Expired JPS6017910Y2 (en) 1974-09-10 1983-06-07 Integral lens light emitting diode structure

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP10659175A Pending JPS5152792A (en) 1974-09-10 1975-09-04

Country Status (7)

Country Link
JP (2) JPS5152792A (en)
CA (1) CA1007736A (en)
DE (1) DE2536704A1 (en)
FR (1) FR2284990A1 (en)
GB (1) GB1487024A (en)
NL (1) NL7509408A (en)
SE (1) SE407129B (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63155083A (en) * 1986-12-19 1988-06-28 小林　寛重 Three-layer sticker and name card with sticker
JPS643876U (en) * 1987-06-18 1989-01-11
JPH01177777U (en) * 1988-06-06 1989-12-19
JP2004158557A (en) * 2002-11-05 2004-06-03 Shurai Kagi Kofun Yugenkoshi Similar flip chip type light emitting diode device package

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5478684A (en) * 1977-12-05 1979-06-22 Nec Corp Semiconductor luminous element
FR2554606B1 (en) * 1983-11-04 1987-04-10 Thomson Csf OPTICAL DEVICE FOR CONCENTRATION OF LIGHT RADIATION EMITTED BY A LIGHT EMITTING DIODE, AND LIGHT EMITTING DIODE COMPRISING SUCH A DEVICE
DE19911717A1 (en) * 1999-03-16 2000-09-28 Osram Opto Semiconductors Gmbh Monolithic electroluminescent device, especially an LED chip, has a row of emission zones individually associated with decoupling elements for decoupling radiation from the device
DE10019665A1 (en) 2000-04-19 2001-10-31 Osram Opto Semiconductors Gmbh Luminescent diode chip and method for its production
GB0017655D0 (en) * 2000-07-19 2000-09-06 Secr Defence Light emtting diode arrangements
DE102004046792B4 (en) * 2004-09-27 2023-01-19 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Thin film optoelectronic chip with integrated lens and method for its manufacture

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5123435B2 (en) * 1971-08-18 1976-07-16

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63155083A (en) * 1986-12-19 1988-06-28 小林　寛重 Three-layer sticker and name card with sticker
JPS643876U (en) * 1987-06-18 1989-01-11
JPH01177777U (en) * 1988-06-06 1989-12-19
JPH0511569Y2 (en) * 1988-06-06 1993-03-23
JP2004158557A (en) * 2002-11-05 2004-06-03 Shurai Kagi Kofun Yugenkoshi Similar flip chip type light emitting diode device package

Also Published As

Publication number Publication date
DE2536704A1 (en) 1976-03-18
SE407129B (en) 1979-03-12
GB1487024A (en) 1977-09-28
JPS5152792A (en) 1976-05-10
NL7509408A (en) 1976-03-12
CA1007736A (en) 1977-03-29
SE7510038L (en) 1976-03-11
FR2284990A1 (en) 1976-04-09
JPS6017910Y2 (en) 1985-05-31

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