JPS5917290A - Magnetic sensor - Google Patents

Magnetic sensor

Info

Publication number
JPS5917290A
JPS5917290A JP57125056A JP12505682A JPS5917290A JP S5917290 A JPS5917290 A JP S5917290A JP 57125056 A JP57125056 A JP 57125056A JP 12505682 A JP12505682 A JP 12505682A JP S5917290 A JPS5917290 A JP S5917290A
Authority
JP
Japan
Prior art keywords
film
section
substrate
mask
magnetic sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57125056A
Other languages
Japanese (ja)
Inventor
Yasushi Toda
戸田 泰
Nobuyuki Saito
信之 斉藤
Kenji Nagata
健治 永田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP57125056A priority Critical patent/JPS5917290A/en
Publication of JPS5917290A publication Critical patent/JPS5917290A/en
Pending legal-status Critical Current

Links

Landscapes

  • Hall/Mr Elements (AREA)

Abstract

PURPOSE:To contrive to enable to manufacture the titled device by a simple process, to improve yield, to enable to manufacture at low cost, and to enhance reliability by a method wherein a substrate formed with lead out electrodes for conduction of an electric signal is cut, and a magnetic resistance effective film is formed on the section thereof being connected to the electrodes. CONSTITUTION:Aluminum stripes 12 are formed on the substrate 11 according to evaporation using a mask, and quartz glass 13 is deposited in the stripes type the same according to sputtering using a mask in the perpendicular direction thereto. Then the block is cut to form chips. The aluminum stripes 12 at the section thereof are made as to lock out on the section being surrounded by the H-shaped section of the substrate 11 and quartz glass 13. Then after the section thereof is polished, the MR film 14 is formed at least at a part thereof according to evaporation using a mask. Although the MR film 14 is formed in the U-shape as to contain the sections of the aluminum stripes 12, the MR film may be formed on the whole of the section.

Description

【発明の詳細な説明】 本発明は磁気抵抗効果型の磁気センサに係り、さらに詳
細には磁気抵抗効果部材からの引き出し電極を有する磁
気センサに関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a magnetoresistive magnetic sensor, and more particularly to a magnetic sensor having an extraction electrode from a magnetoresistive member.

従来のこの種の磁気センサは基板上に磁気抵抗効果素子
膜(以下MR膜という)および電極を蒸着し、これをフ
ォトエツチングしてパターン化シ、磁気センサ素体とし
ていた。以下、この工程につき説明する。
In conventional magnetic sensors of this type, a magnetoresistive element film (hereinafter referred to as MR film) and electrodes are deposited on a substrate, and then patterned by photo-etching to form a magnetic sensor body. This process will be explained below.

まず、基板上にFe−Ni合金によるMR膜を600λ
程度の厚みに堆積する。次に後に電極となるM薄膜を5
oooA程度の厚みに堆積する。この両薄−ン化し線幅
100μm程度の磁気抵抗効果部を形成し、さらに選択
エツチングにより前記のようにして得た磁気抵抗効果部
から電気信号を導くアルミニウム電極を引き出すことに
より完成した磁気センサを得ていた。
First, a 600λ MR film made of Fe-Ni alloy was placed on the substrate.
Deposits to a certain thickness. Next, add 5 M thin films that will later become electrodes.
It is deposited to a thickness of about oooA. A completed magnetic sensor is obtained by thinning both layers to form a magnetoresistive part with a line width of about 100 μm, and then selectively etching to extract an aluminum electrode that guides an electric signal from the magnetoresistive part obtained as described above. I was getting it.

ところが、従来のこの種の磁気抵抗効果型の磁気センサ
は上述のようにフオトリソ工程、工2チング工程などの
複雑な工程を必要とし、工数が多くコストダウンが困難
で、同時に歩留まりの向上を妨げるという欠点があった
However, as mentioned above, this type of conventional magnetoresistive magnetic sensor requires complicated processes such as photolithography process and 2nd process, making it difficult to reduce costs due to the large number of man-hours, and at the same time hindering the improvement of yield. There was a drawback.

本発明は以上の従来の磁気センサの欠点に鑑みてなされ
たもので簡単な工程により製造でき、歩留まりが良く、
低コスト化の可能な信頼性の高い磁気センサを提供しよ
うとするものである。
The present invention has been made in view of the above-mentioned drawbacks of conventional magnetic sensors, and can be manufactured through a simple process and has a high yield.
The present invention aims to provide a highly reliable magnetic sensor that can be manufactured at low cost.

以上の目的を達成するために本発明では、電気信号を導
くための引き出し電極を形成した基板を切断し、この切
断面に前記電極に結合してマスク蒸着などの方法により
磁気抵抗効果膜を形成した構成を採用した。
In order to achieve the above object, in the present invention, a substrate on which extraction electrodes for guiding electrical signals are formed is cut, and a magnetoresistive film is formed on the cut surface by bonding to the electrodes by a method such as mask evaporation. A configuration was adopted.

以下、図面に示す実施例に基づいて本発明の詳細な説明
する。
Hereinafter, the present invention will be described in detail based on embodiments shown in the drawings.

第1図以下は本発明の詳細な説明するもので、各図中に
おいて同一または相当するものについては同一の符号を
付しである。
FIG. 1 and subsequent figures provide a detailed explanation of the present invention, and the same or corresponding parts in each figure are given the same reference numerals.

第1図〜第4図は本発明の磁気センサの構造を製造工程
順に示すもので、まず第1図に示すように基板11上に
マスク蒸着によりアルミニウムスたアルミニウムストラ
イプ12と直角方向に石英ガラス13をマスクスパッタ
により同じくストライブ状に堆積する。この石英ガラス
は補強、保護層となるものである。
1 to 4 show the structure of the magnetic sensor of the present invention in the order of manufacturing steps. First, as shown in FIG. 13 is similarly deposited in stripes by mask sputtering. This quartz glass serves as a reinforcing and protective layer.

次に、たとえば第2図中のA−A線、λ−N線およびB
−B線、B’−B’線で上記のようにして得たブロック
を切断し、第3図に示すようなチップに形成する。同図
に見るようにアルミニウムストライプ12はその切断面
においてH型の基板11と石英ガラス13の断面に囲ま
れて切断面に臨まされるようになる。
Next, for example, line AA, line λ-N and line B in FIG.
The block obtained above is cut along the -B line and the B'-B' line to form a chip as shown in FIG. As shown in the figure, the aluminum stripe 12 is surrounded by the H-shaped substrate 11 and the cross section of the quartz glass 13 at the cut surface thereof.

次にこの切断面を研摩した後、その少なくとも一部に第
4図に斜線で示すようにMR膜f4をマスク蒸着により
形成する。第4図の例ではMR膜14はアルミニウムス
トライプ12の断面を含むようにコの字型に形成してい
るが、型状はこれに限らず、切断面全体にMR膜を形成
するようにしてもよいのはもちろんである。
Next, after polishing this cut surface, an MR film f4 is formed on at least a portion thereof by mask vapor deposition as shown by diagonal lines in FIG. In the example shown in FIG. 4, the MR film 14 is formed in a U-shape to include the cross section of the aluminum stripe 12, but the shape is not limited to this, and the MR film may be formed over the entire cut surface. Of course it's good too.

また、切断面の研摩は第5図に示すように、第3図に示
した切断後のチップを複数個重ね、これを治具などで固
定しておき切断面を研摩した後、MR膜14を形成する
ようにしてもよい。
In addition, as shown in FIG. 5, the cut surface is polished by stacking a plurality of chips after cutting shown in FIG. may be formed.

以上の説明ではわかりやすくするために石英ガラス13
.アルミニウムストライプ12は角材状に図示しである
が、実際には角が丸いどちらかといえば丸棒状のものと
なるものである。
In the above explanation, for ease of understanding, quartz glass 13
.. Although the aluminum stripe 12 is shown in the form of a square bar, it is actually more like a round bar with rounded corners.

以上の組み立て構造は、基板11上に多数条のアルミニ
ウムストライプ12および石英ガラス13を形成した後
、゛これを切断して個々の多数のチップを形成できるの
で、歩留りがよく、製造が簡単でコストダウンな可能に
できる利点がある。
In the above assembly structure, after forming a large number of aluminum stripes 12 and quartz glass 13 on a substrate 11, it is possible to cut them to form a large number of individual chips, resulting in high yield, easy manufacturing, and low cost. There are advantages to being able to down.

また、上記の構造を採用すれば最終工程でMR膜を形成
すればよいので、従来のようKMR膜のエツチングを行
なう必要がなく、エツチングを想定した材質をMR膜に
選ぶ必要がないため、MR膜の材質の選定が全く自由な
上に、エツチング残渣などによるMR膜の損傷もないの
で、特性の良い磁気センサを得ることができる。
In addition, if the above structure is adopted, the MR film can be formed in the final process, so there is no need to etch the KMR film as in the past, and there is no need to select a material for the MR film that is designed to be etched. The material of the film can be selected completely freely, and the MR film is not damaged by etching residue, so a magnetic sensor with good characteristics can be obtained.

また、従来では素子チップを切断した後、チップ1個毎
に、MR膜を形成する面を研摩する工程が必要だったが
、本発明による構造では第5図に示した研摩法が可能で
、生産性を著しく向上させることができる。
Furthermore, in the past, after cutting the element chips, it was necessary to polish the surface on which the MR film would be formed for each chip, but with the structure according to the present invention, the polishing method shown in FIG. 5 is possible. Productivity can be significantly improved.

以上の説明から明らかなように、本発明によれば電気信
号を導くための引き出し電極を形成した基板を切断し、
この切断面に前記電極に結合してマスク蒸着などの方法
により磁気抵抗効果膜を形成する構成を採用しているの
で、構造が簡単で製造上歩留りが良く、簡単に製造する
ことができる安価な磁気センサを提供することができる
As is clear from the above description, according to the present invention, a substrate on which an extraction electrode for guiding an electric signal is formed is cut,
The structure is such that a magnetoresistive film is bonded to the electrode on this cut surface by a method such as mask vapor deposition, so the structure is simple, the production yield is high, and the structure is simple and inexpensive. A magnetic sensor can be provided.

【図面の簡単な説明】[Brief explanation of the drawing]

図はいずれも本発明を説明するもので、第1図〜第4図
は本発明の磁気センサの組み立て構造を説明する斜視図
、第5図は本発明の磁気センサの磁気抵抗効果膜の形成
法の一例を示す説明図である。
The figures are for explaining the present invention. Figures 1 to 4 are perspective views explaining the assembly structure of the magnetic sensor of the present invention, and Figure 5 is the formation of the magnetoresistive film of the magnetic sensor of the present invention. It is an explanatory diagram showing an example of a law.

Claims (1)

【特許請求の範囲】[Claims] 電気信号を導くための引き出し電極を形成した基板を切
断し、この切断面に前記電極に結合してマスク蒸着等に
より磁気抵抗効果素子膜を形成したことを特徴とする磁
気センサ。
A magnetic sensor characterized in that a substrate on which an extraction electrode for guiding an electric signal is formed is cut, and a magnetoresistive element film is formed on the cut surface by bonding to the electrode by mask vapor deposition or the like.
JP57125056A 1982-07-20 1982-07-20 Magnetic sensor Pending JPS5917290A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57125056A JPS5917290A (en) 1982-07-20 1982-07-20 Magnetic sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57125056A JPS5917290A (en) 1982-07-20 1982-07-20 Magnetic sensor

Publications (1)

Publication Number Publication Date
JPS5917290A true JPS5917290A (en) 1984-01-28

Family

ID=14900724

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57125056A Pending JPS5917290A (en) 1982-07-20 1982-07-20 Magnetic sensor

Country Status (1)

Country Link
JP (1) JPS5917290A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6260281A (en) * 1985-09-10 1987-03-16 Sankyo Seiki Mfg Co Ltd Magnetoresistance effect element

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6260281A (en) * 1985-09-10 1987-03-16 Sankyo Seiki Mfg Co Ltd Magnetoresistance effect element
JPH0319715B2 (en) * 1985-09-10 1991-03-15 Sankyo Seiki Seisakusho Kk

Similar Documents

Publication Publication Date Title
US4195323A (en) Thin film magnetic recording heads
US7842334B2 (en) Magnetic sensor using giant magnetoresistive elements and methods for manufacturing the same
US6018862A (en) Thin-film magnetic recording head using a plated metal gap layer
US7170287B2 (en) Thin film magnetic sensor and method of manufacturing the same
JPH0335408A (en) Multitrack head manufacturing method and multitrack head
US4321641A (en) Thin film magnetic recording heads
JPH0247005B2 (en)
EP0006269A1 (en) Elements for magnetic heads, magnetic heads manufactured with these elements, methods for producing both
JPH0548527B2 (en)
US4149205A (en) Magnetic head and process for making laminated magnetic head
US4335410A (en) Thin film magnetic transducer
JPS5917290A (en) Magnetic sensor
US6103545A (en) Process for making a magnetoresistive magnetic sensor and sensor obtained using this process
US4260450A (en) Method of fabrication for thin film magnetic transducers
US4186481A (en) Method for fabrication of rear chip for hall effect magnetic head
JP2730467B2 (en) Magnetic sensor
JPS62204420A (en) Production of thin-film magnetic head
JPH07210821A (en) Thin-film magnetic head and its production
JPS5829116A (en) Magnetoelectric signal converter
JPS5935165B2 (en) Manufacturing method of multilayer thin film coil
JPH05182135A (en) Thin-film magnetic head and production thereof
JPH06338030A (en) Production of horizontal thin film magnetic head
JPH07153024A (en) Thin-film magnetic head and method for manufacture thereof
JPS6246416A (en) Thin film magnetic head
JPS62256208A (en) Structure of gap section of thin-film magnetic head