JPS5917290A - Magnetic sensor - Google Patents
Magnetic sensorInfo
- Publication number
- JPS5917290A JPS5917290A JP57125056A JP12505682A JPS5917290A JP S5917290 A JPS5917290 A JP S5917290A JP 57125056 A JP57125056 A JP 57125056A JP 12505682 A JP12505682 A JP 12505682A JP S5917290 A JPS5917290 A JP S5917290A
- Authority
- JP
- Japan
- Prior art keywords
- film
- section
- substrate
- mask
- magnetic sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 238000000605 extraction Methods 0.000 claims description 4
- 238000007740 vapor deposition Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052782 aluminium Inorganic materials 0.000 abstract description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 230000008020 evaporation Effects 0.000 abstract description 3
- 238000001704 evaporation Methods 0.000 abstract description 3
- 238000004544 sputter deposition Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 15
- 238000005520 cutting process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Hall/Mr Elements (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は磁気抵抗効果型の磁気センサに係り、さらに詳
細には磁気抵抗効果部材からの引き出し電極を有する磁
気センサに関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a magnetoresistive magnetic sensor, and more particularly to a magnetic sensor having an extraction electrode from a magnetoresistive member.
従来のこの種の磁気センサは基板上に磁気抵抗効果素子
膜(以下MR膜という)および電極を蒸着し、これをフ
ォトエツチングしてパターン化シ、磁気センサ素体とし
ていた。以下、この工程につき説明する。In conventional magnetic sensors of this type, a magnetoresistive element film (hereinafter referred to as MR film) and electrodes are deposited on a substrate, and then patterned by photo-etching to form a magnetic sensor body. This process will be explained below.
まず、基板上にFe−Ni合金によるMR膜を600λ
程度の厚みに堆積する。次に後に電極となるM薄膜を5
oooA程度の厚みに堆積する。この両薄−ン化し線幅
100μm程度の磁気抵抗効果部を形成し、さらに選択
エツチングにより前記のようにして得た磁気抵抗効果部
から電気信号を導くアルミニウム電極を引き出すことに
より完成した磁気センサを得ていた。First, a 600λ MR film made of Fe-Ni alloy was placed on the substrate.
Deposits to a certain thickness. Next, add 5 M thin films that will later become electrodes.
It is deposited to a thickness of about oooA. A completed magnetic sensor is obtained by thinning both layers to form a magnetoresistive part with a line width of about 100 μm, and then selectively etching to extract an aluminum electrode that guides an electric signal from the magnetoresistive part obtained as described above. I was getting it.
ところが、従来のこの種の磁気抵抗効果型の磁気センサ
は上述のようにフオトリソ工程、工2チング工程などの
複雑な工程を必要とし、工数が多くコストダウンが困難
で、同時に歩留まりの向上を妨げるという欠点があった
。However, as mentioned above, this type of conventional magnetoresistive magnetic sensor requires complicated processes such as photolithography process and 2nd process, making it difficult to reduce costs due to the large number of man-hours, and at the same time hindering the improvement of yield. There was a drawback.
本発明は以上の従来の磁気センサの欠点に鑑みてなされ
たもので簡単な工程により製造でき、歩留まりが良く、
低コスト化の可能な信頼性の高い磁気センサを提供しよ
うとするものである。The present invention has been made in view of the above-mentioned drawbacks of conventional magnetic sensors, and can be manufactured through a simple process and has a high yield.
The present invention aims to provide a highly reliable magnetic sensor that can be manufactured at low cost.
以上の目的を達成するために本発明では、電気信号を導
くための引き出し電極を形成した基板を切断し、この切
断面に前記電極に結合してマスク蒸着などの方法により
磁気抵抗効果膜を形成した構成を採用した。In order to achieve the above object, in the present invention, a substrate on which extraction electrodes for guiding electrical signals are formed is cut, and a magnetoresistive film is formed on the cut surface by bonding to the electrodes by a method such as mask evaporation. A configuration was adopted.
以下、図面に示す実施例に基づいて本発明の詳細な説明
する。Hereinafter, the present invention will be described in detail based on embodiments shown in the drawings.
第1図以下は本発明の詳細な説明するもので、各図中に
おいて同一または相当するものについては同一の符号を
付しである。FIG. 1 and subsequent figures provide a detailed explanation of the present invention, and the same or corresponding parts in each figure are given the same reference numerals.
第1図〜第4図は本発明の磁気センサの構造を製造工程
順に示すもので、まず第1図に示すように基板11上に
マスク蒸着によりアルミニウムスたアルミニウムストラ
イプ12と直角方向に石英ガラス13をマスクスパッタ
により同じくストライブ状に堆積する。この石英ガラス
は補強、保護層となるものである。1 to 4 show the structure of the magnetic sensor of the present invention in the order of manufacturing steps. First, as shown in FIG. 13 is similarly deposited in stripes by mask sputtering. This quartz glass serves as a reinforcing and protective layer.
次に、たとえば第2図中のA−A線、λ−N線およびB
−B線、B’−B’線で上記のようにして得たブロック
を切断し、第3図に示すようなチップに形成する。同図
に見るようにアルミニウムストライプ12はその切断面
においてH型の基板11と石英ガラス13の断面に囲ま
れて切断面に臨まされるようになる。Next, for example, line AA, line λ-N and line B in FIG.
The block obtained above is cut along the -B line and the B'-B' line to form a chip as shown in FIG. As shown in the figure, the aluminum stripe 12 is surrounded by the H-shaped substrate 11 and the cross section of the quartz glass 13 at the cut surface thereof.
次にこの切断面を研摩した後、その少なくとも一部に第
4図に斜線で示すようにMR膜f4をマスク蒸着により
形成する。第4図の例ではMR膜14はアルミニウムス
トライプ12の断面を含むようにコの字型に形成してい
るが、型状はこれに限らず、切断面全体にMR膜を形成
するようにしてもよいのはもちろんである。Next, after polishing this cut surface, an MR film f4 is formed on at least a portion thereof by mask vapor deposition as shown by diagonal lines in FIG. In the example shown in FIG. 4, the MR film 14 is formed in a U-shape to include the cross section of the aluminum stripe 12, but the shape is not limited to this, and the MR film may be formed over the entire cut surface. Of course it's good too.
また、切断面の研摩は第5図に示すように、第3図に示
した切断後のチップを複数個重ね、これを治具などで固
定しておき切断面を研摩した後、MR膜14を形成する
ようにしてもよい。In addition, as shown in FIG. 5, the cut surface is polished by stacking a plurality of chips after cutting shown in FIG. may be formed.
以上の説明ではわかりやすくするために石英ガラス13
.アルミニウムストライプ12は角材状に図示しである
が、実際には角が丸いどちらかといえば丸棒状のものと
なるものである。In the above explanation, for ease of understanding, quartz glass 13
.. Although the aluminum stripe 12 is shown in the form of a square bar, it is actually more like a round bar with rounded corners.
以上の組み立て構造は、基板11上に多数条のアルミニ
ウムストライプ12および石英ガラス13を形成した後
、゛これを切断して個々の多数のチップを形成できるの
で、歩留りがよく、製造が簡単でコストダウンな可能に
できる利点がある。In the above assembly structure, after forming a large number of aluminum stripes 12 and quartz glass 13 on a substrate 11, it is possible to cut them to form a large number of individual chips, resulting in high yield, easy manufacturing, and low cost. There are advantages to being able to down.
また、上記の構造を採用すれば最終工程でMR膜を形成
すればよいので、従来のようKMR膜のエツチングを行
なう必要がなく、エツチングを想定した材質をMR膜に
選ぶ必要がないため、MR膜の材質の選定が全く自由な
上に、エツチング残渣などによるMR膜の損傷もないの
で、特性の良い磁気センサを得ることができる。In addition, if the above structure is adopted, the MR film can be formed in the final process, so there is no need to etch the KMR film as in the past, and there is no need to select a material for the MR film that is designed to be etched. The material of the film can be selected completely freely, and the MR film is not damaged by etching residue, so a magnetic sensor with good characteristics can be obtained.
また、従来では素子チップを切断した後、チップ1個毎
に、MR膜を形成する面を研摩する工程が必要だったが
、本発明による構造では第5図に示した研摩法が可能で
、生産性を著しく向上させることができる。Furthermore, in the past, after cutting the element chips, it was necessary to polish the surface on which the MR film would be formed for each chip, but with the structure according to the present invention, the polishing method shown in FIG. 5 is possible. Productivity can be significantly improved.
以上の説明から明らかなように、本発明によれば電気信
号を導くための引き出し電極を形成した基板を切断し、
この切断面に前記電極に結合してマスク蒸着などの方法
により磁気抵抗効果膜を形成する構成を採用しているの
で、構造が簡単で製造上歩留りが良く、簡単に製造する
ことができる安価な磁気センサを提供することができる
。As is clear from the above description, according to the present invention, a substrate on which an extraction electrode for guiding an electric signal is formed is cut,
The structure is such that a magnetoresistive film is bonded to the electrode on this cut surface by a method such as mask vapor deposition, so the structure is simple, the production yield is high, and the structure is simple and inexpensive. A magnetic sensor can be provided.
図はいずれも本発明を説明するもので、第1図〜第4図
は本発明の磁気センサの組み立て構造を説明する斜視図
、第5図は本発明の磁気センサの磁気抵抗効果膜の形成
法の一例を示す説明図である。The figures are for explaining the present invention. Figures 1 to 4 are perspective views explaining the assembly structure of the magnetic sensor of the present invention, and Figure 5 is the formation of the magnetoresistive film of the magnetic sensor of the present invention. It is an explanatory diagram showing an example of a law.
Claims (1)
断し、この切断面に前記電極に結合してマスク蒸着等に
より磁気抵抗効果素子膜を形成したことを特徴とする磁
気センサ。A magnetic sensor characterized in that a substrate on which an extraction electrode for guiding an electric signal is formed is cut, and a magnetoresistive element film is formed on the cut surface by bonding to the electrode by mask vapor deposition or the like.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57125056A JPS5917290A (en) | 1982-07-20 | 1982-07-20 | Magnetic sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57125056A JPS5917290A (en) | 1982-07-20 | 1982-07-20 | Magnetic sensor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5917290A true JPS5917290A (en) | 1984-01-28 |
Family
ID=14900724
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57125056A Pending JPS5917290A (en) | 1982-07-20 | 1982-07-20 | Magnetic sensor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5917290A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6260281A (en) * | 1985-09-10 | 1987-03-16 | Sankyo Seiki Mfg Co Ltd | Magnetoresistance effect element |
-
1982
- 1982-07-20 JP JP57125056A patent/JPS5917290A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6260281A (en) * | 1985-09-10 | 1987-03-16 | Sankyo Seiki Mfg Co Ltd | Magnetoresistance effect element |
JPH0319715B2 (en) * | 1985-09-10 | 1991-03-15 | Sankyo Seiki Seisakusho Kk |
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