JPS59172785A - 半導体レ−ザ - Google Patents

半導体レ−ザ

Info

Publication number
JPS59172785A
JPS59172785A JP4744083A JP4744083A JPS59172785A JP S59172785 A JPS59172785 A JP S59172785A JP 4744083 A JP4744083 A JP 4744083A JP 4744083 A JP4744083 A JP 4744083A JP S59172785 A JPS59172785 A JP S59172785A
Authority
JP
Japan
Prior art keywords
layer
band
semiconductors
active layer
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4744083A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0467353B2 (enrdf_load_stackoverflow
Inventor
Yasubumi Kameshima
亀島　泰文
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP4744083A priority Critical patent/JPS59172785A/ja
Publication of JPS59172785A publication Critical patent/JPS59172785A/ja
Publication of JPH0467353B2 publication Critical patent/JPH0467353B2/ja
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/37—Non-linear optics for second-harmonic generation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3422—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising type-II quantum wells or superlattices

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
JP4744083A 1983-03-22 1983-03-22 半導体レ−ザ Granted JPS59172785A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4744083A JPS59172785A (ja) 1983-03-22 1983-03-22 半導体レ−ザ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4744083A JPS59172785A (ja) 1983-03-22 1983-03-22 半導体レ−ザ

Publications (2)

Publication Number Publication Date
JPS59172785A true JPS59172785A (ja) 1984-09-29
JPH0467353B2 JPH0467353B2 (enrdf_load_stackoverflow) 1992-10-28

Family

ID=12775202

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4744083A Granted JPS59172785A (ja) 1983-03-22 1983-03-22 半導体レ−ザ

Country Status (1)

Country Link
JP (1) JPS59172785A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61102084A (ja) * 1984-10-25 1986-05-20 Nec Corp 半導体レ−ザ
JPS61218192A (ja) * 1985-03-25 1986-09-27 Hitachi Ltd 半導体発光素子
JPH0715093A (ja) * 1993-06-25 1995-01-17 Nec Corp 光半導体素子
WO1995026585A1 (de) * 1994-03-25 1995-10-05 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Quantenschichtstruktur

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
APPLED PHYSICS LETTERS=1977 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61102084A (ja) * 1984-10-25 1986-05-20 Nec Corp 半導体レ−ザ
JPS61218192A (ja) * 1985-03-25 1986-09-27 Hitachi Ltd 半導体発光素子
JPH0715093A (ja) * 1993-06-25 1995-01-17 Nec Corp 光半導体素子
WO1995026585A1 (de) * 1994-03-25 1995-10-05 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Quantenschichtstruktur

Also Published As

Publication number Publication date
JPH0467353B2 (enrdf_load_stackoverflow) 1992-10-28

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