JPS59171205A - Microwave transistor amplifier - Google Patents

Abstract

PURPOSE:To miniaturize an amplifier by loading a magnetic substance at the inside of an inner conductor and forming a circulator with the magnetic substance so as to miniaturize the size of an FET amplifier to the size of a triplet circulator at the input side. CONSTITUTION:The inner conductor 20 of the triplet line in which an FET and a microwave integrated circuit MIC are loaded is provided in a microwave transistor (TR) amplifier. The MIC constituting n amplifier of the triplet line is provided with a dielectric substrate 24 vapor-deposited with a metallic film and the FET25. Further, a pair of magnetic substance 3 are loaded in the inner conductor 20 and a pair of magnets 2 are arranged to an outer conductor 5 of the triplet line. Further, the MIC circulator 26 is constituted and the size of the microwave TR amplifier is miniaturized to the size of the triplet circulator 26 at the input side.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention uses a trypto-hyphone circulator,
The present invention also relates to a small microwave transistor amplifier.

Tri-plate type thecurator with uncut input end.

Microwave integrated circuit (hereinafter abbreviated as (r, tMIO),
A conventional l''B T amplifier consisting of a tt'l' I-effect transistor (hereinafter abbreviated as FBT) and an output MIC type curator will be described.

Figure 1 shows a conventional tri-plate circulator on the input side, and an F using a KMIO type circulator on the output side.
g This is a partially cutaway external view of a configuration example of a T amplifier.

In Fig. 1, (1) is a triplate type curator, (2) is a magnet, and (3) is a magnetic material.

(4) is the internal conductor of the tri-plate line, (5) is the outer conductor of the tri-plate line, (6) is the input terminal, (7) is the non-reflection termination, and (8) is the M i that constitutes the amplifier. O,+
9) is a dielectric substrate a on which a metal film is deposited, aI is F'ET
.

(1υ is the output side MIO type resistor, 0z is the dielectric substrate with a metal film deposited on it, I3 is the magnetic material embedded in the dielectric substrate, (I4 is the non-reflective termination resistor 2 (1 The floor is the coaxial connector of the output terminal.

FIG. 2 is a block diagram of FIG. 1. In Fig. 2, the wire is the input side circulator, the wire is the F'ET input side matching circuit, the iron is the FET output side matching circuit, and a* is the output side circulator.

In a low-noise FET amplifier, noise matching is performed using the input matching circuit of the FEIT. As a result, the manual power VSWR of MI Cf81, which consists of the FzT and the matching circuit, increases.The human power VSW characteristics and the output VSWIL! M I Cf8) Manpower 1 to configure all amplifiers to improve performance.
! II, respectively on the output side, input end circular p
tica, an output side zerk, and a rail A9 are provided. In this way, since the input 11j (the external circuit of the circulator (1) and the output side circulator 01) is the power, the size of the amplifier is as follows: 3° larger than the combined size of the output 4i111 and the curator. Therefore, this conventional one; +I: F, g T 1'?
? For the width transducer, the dimensions must be smaller than the combined dimensions of the input side sergies j, l, and 1, and the output side 1 circus and the lathe.
') There was a drawback. This invention has the disadvantage of replacing such r + with the lack of rice r, z 2: l)
In order to do this, load the F1, MIC, and circulator inside the internal conductor of the triplate type LL/-. As expected, we made it possible to make it smaller, and we will discuss the drawings in detail below.

Fig. 3 is a partially cutaway external view of a configuration example of a microwave Fp:T amplifier according to the present invention. The internal conductor of the line, (21) is the conductor of the conversion part from the triplate line to MI(F).

(22) is an output end connector with a built-in non-reflection termination for a triplate type zergulator.

Figure 4 (Al is a sectional view taken along line A-A in Figure 3, Figure 4 (1)
) is B-B when the cross section shown in Section 4 (a) is not used.
FIG. In Fig. 4, (23) constitutes an amplifier, (24) is a five-piece substrate with a metal film, (25) is an FET, (26) is an MIc type circulator, (27) is the MIc type circuitry multi-use non-reflective termination MIC, (28) is the impedance conversion terminal I (E, and (29) is the trizo 1/)
・Absorber for non-reflection termination of Girator, (30
) is a coaxial line.

MIC] (23), MIC (F type S-
Curator fully loaded L5. Triple play 1: M I from the railroad tracks
(The conductor (21) of the conversion part to E is provided.
A static magnetic field is applied to both of the magnetic bodies of the ta.

Some of the microwaves are incident (-2) from the input terminal (6), and some of them are incident on M I ('! (23)). The microwave propagates through the circulator and is absorbed by the non-reflection terminating absorber of the triplate type circulator.The microwave incident on the M I0 (23) is amplified by the FBT (25) and transferred to the M I C type circulator.
The light enters the curator (26). Triplate J Sugisu-
Since a static magnetic field is applied in the same direction as the gear and the rotor,
The micron skin radiated onto the MIfl color circulator (26) is transmitted to the boat of M-I 0 (28) 1iuj on the dark track. S(IC() for impedance conversion
28) and the center of the non-reflective termination (29), through the same ii1+ signal path (30), which is known for the VC formation within the conductor. The output end connector (22) can amplify and collect the microwave. The reflected wave at the output end is transmitted through the coaxial line (30), the impedance conversion M I O (28) and the M I (3
It is absorbed by the non-reflection termination M I 0 (27) for the type circulator through the circulator (26). Therefore, the human power VS WI (, characteristics and output VS WR, characteristics are good.

And the size is 1 on the input side.
The FET amplifier, which is about the same size as the one used in the FET amplifier, is used.

The microwave FET amplifier according to the present invention can be downsized to the size of a triplet type sergulator by using the structure 1 in which a FET, an MIO, and a magnetic material for the surgulator are loaded inside the triplet upper line internal conductor of the input side circulator. .

In addition, 1 or more describes the case where F'ET is used.7
However, this invention is not limited to this, but includes bipolar transistors,
It can also be applied to all applications such as static TTT induction), transistors, and micro/microwave monolithic integrated circuits.

As described above, in the microwave transistor amplifier according to the present invention, by loading the magnetic material for MI□, ) transistor and There is an advantage that the size of the circulator can be reduced to that of a triplate circulator.

[Brief explanation of the drawing]

Figure 1 shows the conventional input side 1 (tri-plate type gear,
- data, output 1 rule is M A partially cutaway external view of the microwave PET amplifier according to the present invention, No. 4
Figure (a) is a cross-sectional view taken along line A-A' of the item shown in Figure 3;
Figure (1)) shows B-13 when the cross section is not taken from Figure 4 (a).
' is a line VR surface view. In the figure, (1) is a triplate type plate. (2) is a magnet, (3) is a magnetic material, (4) is the inner conductor of the tri-rate line, (5) is the outer conductor of the tri-rate line, (6) is the input terminal, (7) is the non-reflection termination, (8) is the MIC that constitutes the amplifier, f9) is the dielectric substrate a on which a metal film is deposited, fllll is the FET, and 11υ is the Nf on the output side.
In-type sergisulator, α2 is the attractant base ib on which 1 g of metal is deposited, and a~ is the magnetic material embedded in the dielectric substrate. 0 is the resistor for non-reflection termination, u is the same 1 connector and 2 connectors of the output terminal, un2 is the input terminal 1) 1j therque V 3'
, un is the input side matching circuit of FEII+, U → is FET
The output side matching circuit of U! J is the output side circulator,
(21 is equipped with FET and MIO inside!ii
l is the internal conductor of the triplate line, (21) is the conductor of the conversion part from the triplate line to MIO,
(22) is the output end connector with a built-in non-reflection termination for the triplate type circulator, (23) is the M 1 p constituting the amplifier, and (24) is the dielectric substrate on which the gold IJ5 film is deposited (: , ( 25) is F BT, (2
6) is MI (> form circulator, (27) is MI
(28)
) is MIO for impedance conversion, (29) is triplate type absorber for non-reflection termination,
(30) is a coaxial line. In FIG. 1, the same or corresponding parts VC are indicated by the same reference numerals. Agent Makoto Kuzuno - Haku January 2nd B

Claims (1)

[Claims] A microwave transistor amplifier having a triplate circulator formed by sandwiching an inner conductor between a pair of magnetic materials and sandwiching these between a pair of magnets via an outer conductor. A microwave transistor amplifier characterized in that a magnetic material is loaded inside the internal conductor, thereby forming a generator/transistor.