JPS59169058U - semiconductor laser diode - Google Patents

semiconductor laser diode

Info

Publication number
JPS59169058U
JPS59169058U JP6306283U JP6306283U JPS59169058U JP S59169058 U JPS59169058 U JP S59169058U JP 6306283 U JP6306283 U JP 6306283U JP 6306283 U JP6306283 U JP 6306283U JP S59169058 U JPS59169058 U JP S59169058U
Authority
JP
Japan
Prior art keywords
laser diode
semiconductor laser
resonator
laser
face
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6306283U
Other languages
Japanese (ja)
Inventor
上西 勝三
Original Assignee
沖電気工業株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 沖電気工業株式会社 filed Critical 沖電気工業株式会社
Priority to JP6306283U priority Critical patent/JPS59169058U/en
Publication of JPS59169058U publication Critical patent/JPS59169058U/en
Pending legal-status Critical Current

Links

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of drawings]

第1図はこの考案の半導体レーザダイオードの一実施例
のチップ拡大図、第2図は−この考案の半導体レーザダ
イオードの第2の実施例のチップの拡大図である。 1、 2. 3. 10・・・レーザダイオードストラ
イフ、4. 5・・・レーザ共振器端面、6.7・・・
ストライプの中間、8・・・レーザダイオードチップ、
11・・・円形共振器端面。
FIG. 1 is an enlarged view of a chip of an embodiment of the semiconductor laser diode of this invention, and FIG. 2 is an enlarged view of a chip of a second embodiment of the semiconductor laser diode of this invention. 1, 2. 3. 10...Laser diode strife, 4. 5... Laser resonator end face, 6.7...
Middle of stripe, 8...laser diode chip,
11...Circular resonator end face.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 共振器の片側を凹面状またはくぼんだ多角形にし、−そ
の内部に複数個のレーザ共振器を含ませ、各レーザダイ
オードストライフを共振器端面に直交するように配置し
たことを特徴とする半導体レーザダイオード。
A semiconductor characterized in that one side of the resonator is made into a concave or recessed polygonal shape, - a plurality of laser resonators are included inside the resonator, and each laser diode stripe is arranged perpendicular to the end face of the resonator. laser diode.
JP6306283U 1983-04-28 1983-04-28 semiconductor laser diode Pending JPS59169058U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6306283U JPS59169058U (en) 1983-04-28 1983-04-28 semiconductor laser diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6306283U JPS59169058U (en) 1983-04-28 1983-04-28 semiconductor laser diode

Publications (1)

Publication Number Publication Date
JPS59169058U true JPS59169058U (en) 1984-11-12

Family

ID=30193253

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6306283U Pending JPS59169058U (en) 1983-04-28 1983-04-28 semiconductor laser diode

Country Status (1)

Country Link
JP (1) JPS59169058U (en)

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