JPS59167015A - Manufacture of quartz apparatus - Google Patents
Manufacture of quartz apparatusInfo
- Publication number
- JPS59167015A JPS59167015A JP4168184A JP4168184A JPS59167015A JP S59167015 A JPS59167015 A JP S59167015A JP 4168184 A JP4168184 A JP 4168184A JP 4168184 A JP4168184 A JP 4168184A JP S59167015 A JPS59167015 A JP S59167015A
- Authority
- JP
- Japan
- Prior art keywords
- quartz
- layer
- crystalline
- transparent
- rod
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67313—Horizontal boat type carrier whereby the substrates are vertically supported, e.g. comprising rod-shaped elements
- H01L21/67316—Horizontal boat type carrier whereby the substrates are vertically supported, e.g. comprising rod-shaped elements characterized by a material, a roughness, a coating or the like
Abstract
Description
【発明の詳細な説明】
本発明は高温反応処理に使用する高純度石英器具製造方
法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing high purity quartz instruments for use in high temperature reaction processing.
例えば半導体装置の製造工程に於ては、酸化。For example, oxidation occurs in the manufacturing process of semiconductor devices.
拡散、気相成長、液相成長等の高温反応処理が行わねる
。そしてこれらの高温反応処理は何れも極めて高い純１
ｆが要求されるので、これらの高温反応処理に際して半
導体基板を支持搭載する器具は、該器具から有害な不純
物が発散して来ることのｋい高純度の安定した材料で形
成しなければならな〜１゜
そこで従来これら高温反応処理には上記条件を備えた透
明石英器具が一般に用いられていた。High-temperature reaction treatments such as diffusion, vapor phase growth, and liquid phase growth cannot be performed. All of these high-temperature reaction treatments produce extremely high purity 1.
f is required, the equipment that supports and mounts the semiconductor substrate during these high-temperature reaction treatments must be made of high-purity, stable materials that do not allow harmful impurities to escape from the equipment. ~1° Therefore, in the past, transparent quartz instruments having the above-mentioned conditions were generally used for these high-temperature reaction treatments.
然し透明石英は２１４０［℃〕程度の温度で軟化するた
め、上記透明石英器具は前記高温反応処理に於いてしば
しば用いられる１１５０〜１３００（℃）程度の高温に
於ては極めて変形しやすい。そのため該透明石英器具に
支持搭載されている被処理半導体基板に変形や割れを生
じ、半導体装置の製造歩留まりが低下するという問題や
、石英器具の寿命が極めて短かいために製造原価の上昇
を招くという問題があった。However, since transparent quartz softens at a temperature of about 2140°C, the transparent quartz device is extremely susceptible to deformation at high temperatures of about 1150 to 1300°C, which are often used in the high-temperature reaction process. As a result, the semiconductor substrate to be processed that is supported and mounted on the transparent quartz device may be deformed or cracked, leading to problems such as a decrease in the manufacturing yield of semiconductor devices, and an increase in manufacturing costs due to the extremely short lifespan of the quartz device. There was a problem.
本発明は上記問題点に鑑み、高温反応処理に際して変形
することがなく、然かも有害な不純物を発散することの
ない高純度結晶質石英焼結体からなる石英器具製造方法
を提供するものである。In view of the above-mentioned problems, the present invention provides a method for manufacturing quartz utensils made of a high-purity crystalline quartz sintered body that does not deform during high-temperature reaction treatment and does not emit harmful impurities. .
即ち本発明は結晶質石英粒を筒状加熱装置に充填して加
熱し表層部に透明石英層を有する結晶質石英焼結体を形
成する工程、該結晶質石英焼結体を透明石英を用いて接
続する工程、前記結晶質石英焼結体の切削加工部表面に
透明石英層を形成する工程を少々くとも有することを特
徴とする石英器具製造方法に関するものである。That is, the present invention provides a process of filling crystalline quartz grains into a cylindrical heating device and heating them to form a crystalline quartz sintered body having a transparent quartz layer on the surface layer, and a process of forming the crystalline quartz sintered body using transparent quartz. The present invention relates to a method for manufacturing a quartz device, which comprises at least a step of connecting the crystalline quartz sintered body with a transparent quartz layer, and a step of forming a transparent quartz layer on the surface of the cut portion of the crystalline quartz sintered body.
以下本発明の石英器具製造方法を第１図に示す一実施例
に使用する結晶質石英棒の断面構造図。The following is a cross-sectional structural diagram of a crystalline quartz rod used in an embodiment of the quartz instrument manufacturing method of the present invention shown in FIG. 1.
第２図に示す一実施例の斜視図、第３図に示す一実施例
に於ける基板支持溝の斜視図及び第４図に示す一実施例
に於ける被処理基板搭載状態の側面図を用いて詳細に説
明する。A perspective view of an embodiment shown in FIG. 2, a perspective view of a substrate support groove in an embodiment shown in FIG. 3, and a side view of a substrate to be processed in an embodiment shown in FIG. 4. This will be explained in detail using
本発明方法により製造される石英器具は、例えば第１図
に示すように１７００［’Ｃ］程度の高い軟化温度を有
する結晶質石英焼結層１０表層部に、例えば１〜２〔顛
〕程度の厚さの透明石英層２が形成された通常８〜１０
（ｙｎ）程度の直径を有する結晶質石英棒３によ多形成
される。The quartz utensil manufactured by the method of the present invention has a crystalline quartz sintered layer 10 having a high softening temperature of about 1,700 ['C], for example, about 1 to 2 [silver] on the surface layer, as shown in FIG. 1, for example. A transparent quartz layer 2 with a thickness of 8 to 10 mm is usually formed.
The crystalline quartz rod 3 has a diameter of approximately (yn).
そして本発明方法により製造される石英器具は、例えば
第２図に示すように、前記結晶質石英棒３を透明石英４
を用いて溶接形成した上枠５と、該上枠と同様に形成し
た上枠より各辺の寸法の短かい下枠６を、結晶質石英棒
３からなる柱７により所定の間隔を持たせて透明石英４
により溶接して形成した枠組みの舟形構造を有している
。そして該枠組みの底部の４隅に結晶質石英棒３からな
る脚８が透明石英４により溶接されており、上枠及び下
枠の長手方向の辺を形成している結晶質石英棒３の相対
向する面には所定の溝幅を有する基板支持溝９が所定の
ピッチで形成されており、第３図に示すように訪基板支
持溝９の切削面に表出する結晶質石英焼結層１の表面に
は、該部分を極部的に溶融せしめて形成した薄い透明石
英層１０を有してなっている。（図中２は透明石英層）
第４図は上記石英器具に被処理半導体基板１１を支持搭
載した状態を示す側面図で、図中５は上枠、６は下枠、
７は柱、８は脚を表わす。In the quartz instrument manufactured by the method of the present invention, for example, as shown in FIG.
An upper frame 5 formed by welding using the above upper frame, and a lower frame 6 having dimensions shorter on each side than the upper frame formed in the same manner as the upper frame, are spaced at a predetermined distance by pillars 7 made of crystalline quartz rods 3. Transparent quartz 4
It has a boat-shaped structure with a welded frame. Legs 8 made of crystalline quartz rods 3 are welded to the four corners of the bottom of the framework with transparent quartz 4, and the legs 8 of the crystalline quartz rods 3 forming the longitudinal sides of the upper and lower frames are On the facing surface, substrate support grooves 9 having a predetermined groove width are formed at a predetermined pitch, and as shown in FIG. 1 has a thin transparent quartz layer 10 formed by locally melting the portion. (2 in the figure is a transparent quartz layer)
FIG. 4 is a side view showing a state in which the semiconductor substrate 11 to be processed is supported and mounted on the quartz instrument, in which 5 is an upper frame, 6 is a lower frame,
7 represents the pillar and 8 represents the leg.
上記本発明の構造を有する石英器具を形成するには、先
ず所望の内径を有する円筒状の加熱装置に例えば１５０
〔メツシュ〕程度の大甑さを有する高純度の結晶質石英
粒を充填し、該加熱装置を減圧しながら約２０００〜２
５００〔℃〕程度に昇温し、該加熱装置内に充填されて
いる結晶質石英粒を所望の密度に焼結させ結晶質石英棒
を形成する。そして該焼結過程は高温になっている加熱
装置の内面に枡する結晶質石英棒の表面から中心に向っ
て進んで行くので、中心部が所定の密度に焼結された状
態に於ける結晶質石英棒は、第１図に示すように加熱装
置に接１７ている表面には所望の厚さの溶融石英層即ち
透明石英層２が形成され、その下層の結晶質石英焼結層
１の密度は透明石英層２の底面から中心に向って徐々に
小さく形成される。To form a quartz instrument having the structure of the present invention, first, a cylindrical heating device having a desired inner diameter, for example,
Filled with high-purity crystalline quartz grains with a size of approximately 2,000 to 2,000 g
The temperature is raised to about 500 [° C.], and the crystalline quartz grains filled in the heating device are sintered to a desired density to form a crystalline quartz rod. The sintering process proceeds from the surface of the crystalline quartz rod placed on the inner surface of the heating device, which is heated to a high temperature, toward the center. As shown in FIG. 1, a fused quartz layer, that is, a transparent quartz layer 2 of a desired thickness is formed on the surface in contact with the heating device 17, as shown in FIG. The density gradually decreases from the bottom of the transparent quartz layer 2 toward the center.
次いで上記結晶質石英棒３を用いて枠組みによる舟形構
造の石英器具を形成する方法を第２図を用いて説明する
。Next, a method of forming a quartz instrument having a boat-shaped framework using the crystalline quartz rod 3 will be explained with reference to FIG.
該石英器具を形成するには先づ所定の長さに切断した前
記結晶質石英棒３を透明石英４を用い、例えば酸水素（
０２＋ ’Ｈｚ ）焔により溶接して上枠５及び下枠６
を形成する。To form the quartz instrument, first, the crystalline quartz rod 3 cut into a predetermined length is heated using transparent quartz 4, for example, oxyhydrogen (
02+'Hz) Weld the upper frame 5 and lower frame 6 with flame.
form.
次いで上枠５と下枠６を所定の間隔で保持し、結晶ノη
石英棒３からなる柱７を透明石英４ｆ：用いて４隅に溶
接し、舟形構造の枠組みを形成して後、該枠組の底部の
４隅に結晶質石英棒３からなる脚。Next, the upper frame 5 and the lower frame 6 are held at a predetermined interval, and the crystal η
A pillar 7 made of quartz rods 3 is welded to four corners using transparent quartz 4f to form a framework of a boat-shaped structure, and then legs made of crystalline quartz rods 3 are attached to the four corners of the bottom of the framework.
８ｔ−透明石英４により溶接す′る。8t - Welded with transparent quartz 4.
次いで該石英器具に搭載しようとする被処理基板より僅
かに大きい直径を有し、且つ該被処理基板の２〔倍〕程
度の厚さを有するダイヤモンド・ホイールを回転させな
がら、前記石英器具内に所定の深さに挿入し、該石英器
具の上枠５及び下枠６に基板支持溝９を同時に切削形成
する。そして該切削操作を所定ピッチづつ移拘して繰り
返えし行い、容器の全域に基板支持溝９を形成する。Next, a diamond wheel having a diameter slightly larger than the substrate to be processed and about twice the thickness of the substrate to be processed is rotated, and placed inside the quartz device. The substrate is inserted to a predetermined depth, and substrate support grooves 9 are simultaneously cut and formed in the upper frame 5 and lower frame 6 of the quartz instrument. The cutting operation is then repeated at predetermined pitches to form substrate support grooves 9 in the entire area of the container.
次いで第３図に示すように前記基板支持溝９の切削面に
表出している粗面状の結晶質石英焼結層１０表面を、細
い酸水素（０２＋Ｈ２）焔で溶融し、基板支持溝９表面
に０．５〔龍〕程度の薄い透明石英層１０を形成する。Next, as shown in FIG. 3, the rough surface of the crystalline quartz sintered layer 10 exposed on the cut surface of the substrate support groove 9 is melted with a thin oxyhydrogen (02+H2) flame to form the substrate support groove 9. A thin transparent quartz layer 10 with a thickness of about 0.5 [Dragon] is formed on the surface.
上記実施例に於ては、本発明を結晶質石英棒により形成
する枠組み構造の石英器具について説明したが、本発明
は結晶質石英板を用いて形成する石英器具にも適用する
ことができる。In the above embodiments, the present invention has been described with respect to a quartz instrument having a framework structure formed of crystalline quartz rods, but the present invention can also be applied to a quartz instrument formed using a crystalline quartz plate.
父上記構造の石英器具は半導体装置の製造工程以外にも
使用することができる。The quartz instrument having the above structure can also be used in processes other than the manufacturing process of semiconductor devices.
以上説明したように本発明の構造を有する石英器具は、
表層部を除き大部分が１７００ （’ＣＩ）程度の高い
軟化温度を有する結晶質石英の焼結層で形成されている
ので高温に於ける強度は極めて強い。As explained above, the quartz instrument having the structure of the present invention,
Most of the material except for the surface layer is formed of a sintered layer of crystalline quartz having a high softening temperature of about 1700 ('CI), so its strength at high temperatures is extremely high.
従って、通常の高温反応処理に使用される１１５０〜１
３０ ｏｃ’ｃ：）程度の温度では短期間で変形を生ず
ることはないので、被処理半導体基板に変形や割ねを生
ぜしめない。Therefore, the 1150-1 used in normal high-temperature reaction processing
Since deformation does not occur in a short period of time at a temperature of about 30 oc'c:), the semiconductor substrate to be processed is not deformed or cracked.
又該石英器具は表層部に透明石英層が形成されているの
で表面が緻密且つ平滑で、汚染物質や該器具を洗浄する
際の酸類等の吸着がなく、従って高温反応処理に際して
被処理半導体基板や反応ガスを汚染させることがない。In addition, since the quartz device has a transparent quartz layer formed on its surface, the surface is dense and smooth, and there is no adsorption of contaminants or acids when cleaning the device. and does not contaminate reaction gases.
従って本発明は半導体装置の製造歩留まりや製造品質の
向上及び製造原価の低下に対して極めて有効である。Therefore, the present invention is extremely effective in improving the manufacturing yield and quality of semiconductor devices and reducing manufacturing costs.
第１図は本発明の一実施例に使用する結晶質石英棒の断
面構造図、第２図は本発明の石英器具に於ける一実施例
の斜視図、第３図は本発明の一実楕例に於ける基板支持
溝の斜視図、第４図は本発明の一実施例に於ける被処理
基板搭載状態の側面図である。
図に於て、１け結晶質石英焼結層、２は透明石英層、３
は結晶質石英棒、４け透明石英、５は上枠、６は下枠、
７は柱、８は脚、９は基板支持溝。
１０は薄い透明石英層、１１は被処理半導体基板を表わ
す。Fig. 1 is a cross-sectional structural diagram of a crystalline quartz rod used in an embodiment of the present invention, Fig. 2 is a perspective view of an embodiment of a quartz instrument of the present invention, and Fig. 3 is an embodiment of the present invention. FIG. 4 is a perspective view of a substrate support groove in an elliptical example, and a side view of a state in which a substrate to be processed is mounted in an embodiment of the present invention. In the figure, 1 is a crystalline quartz sintered layer, 2 is a transparent quartz layer, and 3 is a transparent quartz layer.
is a crystalline quartz rod, 4 pieces of transparent quartz, 5 is an upper frame, 6 is a lower frame,
7 is a pillar, 8 is a leg, and 9 is a board support groove. 10 represents a thin transparent quartz layer, and 11 represents a semiconductor substrate to be processed.
Claims (1)
熱し表層部に透明石英層を有する結晶質石英溶結体を形
成する工程、該結晶質石英焼結体を透明石英を用いて接
続する工程、前記結晶質石英焼結体の切削加工部表面に
透明石英層を形成する工程、を少なくとも有することを
特徴とする石英器具製造方法。(1) A process of filling high-purity crystalline quartz grains into a cylindrical heating device and heating them to form a crystalline quartz welded body having a transparent quartz layer on the surface layer, using transparent quartz as the crystalline quartz sintered body. 1. A method for manufacturing a quartz device, comprising at least the steps of: connecting the crystalline quartz sintered body with a transparent quartz layer; and forming a transparent quartz layer on the surface of the cut portion of the crystalline quartz sintered body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4168184A JPS59167015A (en) | 1984-03-05 | 1984-03-05 | Manufacture of quartz apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4168184A JPS59167015A (en) | 1984-03-05 | 1984-03-05 | Manufacture of quartz apparatus |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4418680A Division JPS5829617B2 (en) | 1980-04-04 | 1980-04-04 | quartz fixtures |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59167015A true JPS59167015A (en) | 1984-09-20 |
Family
ID=12615167
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4168184A Pending JPS59167015A (en) | 1984-03-05 | 1984-03-05 | Manufacture of quartz apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59167015A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1006564A1 (en) * | 1998-11-30 | 2000-06-07 | SICO Jena GmbH Quarzschmelze | Process of fabrication of semiconductor wafer boat and wafer boat |
| CN103474382A (en) * | 2013-09-06 | 2013-12-25 | 济南科盛电子有限公司 | Quartz bearing boat |
| CN116021240A (en) * | 2023-02-20 | 2023-04-28 | 杭州泓芯微半导体有限公司 | Quartz boat processing technology |
-
1984
- 1984-03-05 JP JP4168184A patent/JPS59167015A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1006564A1 (en) * | 1998-11-30 | 2000-06-07 | SICO Jena GmbH Quarzschmelze | Process of fabrication of semiconductor wafer boat and wafer boat |
| US6276592B1 (en) | 1998-11-30 | 2001-08-21 | Sico Jena Gmbh Quarzschmelze | Process for the production of a holding device for semiconductor disks and holding device produced by this process |
| CN103474382A (en) * | 2013-09-06 | 2013-12-25 | 济南科盛电子有限公司 | Quartz bearing boat |
| CN116021240A (en) * | 2023-02-20 | 2023-04-28 | 杭州泓芯微半导体有限公司 | Quartz boat processing technology |
| CN116021240B (en) * | 2023-02-20 | 2023-09-29 | 杭州泓芯微半导体有限公司 | Quartz boat processing technology |
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