JPS59157000A - Method for polishing optical parts - Google Patents
Method for polishing optical partsInfo
- Publication number
- JPS59157000A JPS59157000A JP58026246A JP2624683A JPS59157000A JP S59157000 A JPS59157000 A JP S59157000A JP 58026246 A JP58026246 A JP 58026246A JP 2624683 A JP2624683 A JP 2624683A JP S59157000 A JPS59157000 A JP S59157000A
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- optical parts
- bromide
- iodide
- hydrobromic acid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/12—Halides
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【発明の詳細な説明】
[発明の技術分野]
この発明は臭化物またはヨウ化物を素拐とする光学部品
の研磨法に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a method for polishing optical components using bromide or iodide as abrasive.
[発明の技術的背景とその問題点]
近年、波長数μm−数十μmηの赤外光の応用技術が−
盛んに研究されている。特に波長106μmの大パワー
炭酸ガスレーザ光の加工、医用への応用の進歩は目覚ま
しい。この波長域で使うレンズ、窓材、光ファイバ等は
、高い透過率が要求され、その素拐としては格子振動に
よる吸収が充分長い波長域にある、Cs 、Rh 、に
、Na 等1価金属のハロゲン化物が広く用いられてい
る。[Technical background of the invention and its problems] In recent years, application technology of infrared light with a wavelength of several μm to several tens of μmη has been developed.
It is being actively researched. In particular, progress has been remarkable in the processing and medical applications of high-power carbon dioxide laser light with a wavelength of 106 μm. Lenses, window materials, optical fibers, etc. used in this wavelength range are required to have high transmittance, and monovalent metals such as Cs, Rh, Na, etc. are in the wavelength range where absorption by lattice vibration is long enough. halides are widely used.
上記1価金属ハロゲン化物のうち、臭化物さヨウ化物は
波長10μm前後あるいはそれよシ長波長の領域で透過
率の高い素材であり、光ファイバ等の光路の長い光学部
品に関してはこの領域で他の材料より特に優れた透過率
を示す。しかしこれ等の臭化物とヨウ化物は極めて軟ら
かい為、機械研磨あるいはメカノケミカルポリッシング
等が困σ・侘である。また、これらの研磨を行浸っても
100倍前後の倍率の顕微鏡観察で多数の線状の研磨傷
が認められる。このような傷は光を散乱するので光学部
品の透過率を下げ、また大出力光を透過させる時の破壊
の起点となるなど、光学部品の性能を著しく低下させる
ものである。Among the monovalent metal halides mentioned above, bromide and iodide are materials with high transmittance in the wavelength region of around 10 μm or longer wavelengths, and for optical components with long optical paths such as optical fibers, other materials in this region are used. It exhibits particularly superior transmittance compared to other materials. However, since these bromides and iodides are extremely soft, mechanical polishing or mechanochemical polishing is difficult. Furthermore, even after repeated polishing, many linear polishing scratches can be observed by microscopic observation at a magnification of around 100 times. Such scratches scatter light, lowering the transmittance of the optical component, and serve as a starting point for destruction when transmitting high-output light, thereby significantly deteriorating the performance of the optical component.
さらに、前記臭化物又はヨウ化物の結晶は、有機溶媒や
有機酸などによって、エッチピントが多数発生し、また
水に対する溶解度が非常に大きく表面の研磨や洗浄に多
くの問題点があった。Furthermore, the bromide or iodide crystals cause many etch spots due to organic solvents, organic acids, etc., and have very high solubility in water, causing many problems in surface polishing and cleaning.
[発明の目的]
この発明は、上述した従来の研磨技術の問題点を解消し
、Cs 、Rb 、K 、Naの臭化物又はヨウ化物を
素材とする光学部品の表面を傷のほとんど怖い平滑な面
に仕上げる研磨法を提供することを目的とする。[Objective of the Invention] The present invention solves the problems of the conventional polishing techniques described above, and improves the surface of optical parts made of bromide or iodide of Cs, Rb, K, and Na to a smooth surface with almost no fear of scratches. The purpose is to provide a polishing method that achieves a perfect finish.
[発明の概髪コ
本発明はCsBr 、RbBr 、KBr 、NaBr
するいはこれラノ固溶体からなる光学部品の研磨法に
おいて、上記臭化物部品を濃臭化水素酸で化学研磨によ
り平滑表面を得る方法およびCsI、RbI、KI、N
aIあるいけこれらの固溶体からなる光学部品の研磨法
において上記ヨウ化物を濃臭化水素酸で化学研磨により
、平滑な面を得る方法である。[The present invention relates to CsBr, RbBr, KBr, NaBr.
Alternatively, in this method of polishing optical components made of a lano solid solution, a method of chemically polishing the bromide components with concentrated hydrobromic acid to obtain a smooth surface, and CsI, RbI, KI, N
In this method of polishing an optical component made of a solid solution of aI or a solid solution thereof, a smooth surface is obtained by chemically polishing the iodide with concentrated hydrobromic acid.
[発明の効果]
上記の臭化物、ヨウ化物の表面にエッチビット等をほと
んど発生させずに化学研磨し、容易に平滑な面を得るこ
とができる。[Effects of the Invention] A smooth surface can be easily obtained by chemically polishing the surface of the bromide or iodide mentioned above without generating etch bits or the like.
[発明の実施例]
実施例1゜
CsBr単結晶をストリング7− (String S
aw) テ切断した。ストリングンーは、絹糸を絶えず
新しいエタノール水溶液で濡らし、その溶解作用で却結
晶を切断するものであシ、結晶に応力を加えずに切断す
ることができるが、その面には多くの場合縞状あるいは
さざ波状の凹凸が生ずる。この面をエタノール水溶液で
イ需らした研磨布を張った研磨板上で研磨した。このよ
うに液体の溶解作用と機械的研磨作用とを組合せた研磨
法、すなわちメカノケミカルボリッジ〜ば、広く用いら
れているが。[Embodiments of the Invention] Example 1 CsBr single crystal was formed into a string 7- (String S
aw) It was cut off. Stringing is a method in which the silk thread is constantly wetted with a fresh ethanol aqueous solution, and the dissolving action of the solution cuts the crystals.Although it can be cut without applying stress to the crystals, it often leaves stripes on the surface. Alternatively, ripple-like unevenness may occur. This surface was polished on a polishing plate covered with a polishing cloth soaked in an ethanol aqueous solution. As described above, a polishing method that combines the dissolving action of a liquid and a mechanical polishing action, ie, mechanochemical borage, is widely used.
研磨面を100倍の光学顕微鏡で観察しだところ、前述
のさざ竺状の凹凸は消失し、はぼ平ら々而となったが、
かなシの擦り傷が認められた。この面ころ、メカノケミ
カルボリッジ外の棋階で存在しλた擦り傷は消失し、平
滑な面が生じた。時間がこれより短い場合は擦シ傷の消
失が不完全であり、時間が長講ぎると、新たな荒れが認
められる場合がある。この最適時間は単結晶の成長条件
にも依存する。転位等、欠陥の密度が大きい結晶で・は
化学研磨の時間を長くすると欠陥を中心に表面が荒れる
が、逆に欠陥の少ない単結晶では比較的長時間をかけて
非常に平滑な面を得ることが容易である0
実施例2゜
C5I単結晶を濃ヨウ化水素酸(HI57重聞・係。When the polished surface was observed under a 100x optical microscope, the ripple-like irregularities mentioned above disappeared and it became almost flat.
Kanashi abrasions were observed. On this surface, the scratches that existed on the chess floor outside the Mechanochemical Boridge disappeared, and a smooth surface appeared. If the time is shorter than this, the scratches will not disappear completely, and if the time is too long, new roughness may be observed. This optimum time also depends on the single crystal growth conditions. For crystals with a high density of defects such as dislocations, if the chemical polishing time is prolonged, the surface becomes rough around the defects, but on the other hand, for single crystals with few defects, it takes a relatively long time to obtain a very smooth surface. Example 2: C5I single crystals were prepared using concentrated hydroiodic acid (HI57, Section 2).
すなわち10.3 mol/1kg H2OI)もの)
を用イテ、実施例1と同様な方法で研磨したところ、平
滑な面を得るこきができた。化学研磨の最適浸漬時間に
5〜20秒であった。i.e. 10.3 mol/1kg H2OI)
When polished using the same method as in Example 1, a smooth surface was obtained. The optimum immersion time for chemical polishing was 5 to 20 seconds.
Claims (1)
rあるいはこれらのシ・」溶体からなる光学部品の表面
を濃臭化水素酸で化学研磨することを特徴とする光学部
品の’Alf磨法。 (2] CsI、RbI、KI、NaIあるいはこれら
の固溶体からなる光学部品の表面を濃臭化水素rニーで
化学研磨することを特徴とする光学部品の研磨法。(1) CsBr, 11bBr, KBr, NaB
An 'Alf polishing method for optical components, which is characterized by chemically polishing the surface of an optical component made of a r or these C solution with concentrated hydrobromic acid. (2) A method for polishing an optical component, which comprises chemically polishing the surface of an optical component made of CsI, RbI, KI, NaI, or a solid solution thereof using concentrated hydrogen bromide.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58026246A JPS59157000A (en) | 1983-02-21 | 1983-02-21 | Method for polishing optical parts |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58026246A JPS59157000A (en) | 1983-02-21 | 1983-02-21 | Method for polishing optical parts |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS59157000A true JPS59157000A (en) | 1984-09-06 |
Family
ID=12187929
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58026246A Pending JPS59157000A (en) | 1983-02-21 | 1983-02-21 | Method for polishing optical parts |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59157000A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0279809A (en) * | 1988-08-18 | 1990-03-20 | Gec Marconi Ltd | Lens system |
JPH07235519A (en) * | 1994-02-24 | 1995-09-05 | Furukawa Electric Co Ltd:The | Method of manufacturing compound semiconductor wafer |
EP1562226A2 (en) * | 2004-02-06 | 2005-08-10 | Interuniversitair Microelektronica Centrum ( Imec) | A method for removing oxides from a Ge semiconductor substrate surface |
-
1983
- 1983-02-21 JP JP58026246A patent/JPS59157000A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0279809A (en) * | 1988-08-18 | 1990-03-20 | Gec Marconi Ltd | Lens system |
JPH07235519A (en) * | 1994-02-24 | 1995-09-05 | Furukawa Electric Co Ltd:The | Method of manufacturing compound semiconductor wafer |
EP1562226A2 (en) * | 2004-02-06 | 2005-08-10 | Interuniversitair Microelektronica Centrum ( Imec) | A method for removing oxides from a Ge semiconductor substrate surface |
EP1562226A3 (en) * | 2004-02-06 | 2005-08-17 | Interuniversitair Microelektronica Centrum ( Imec) | A method for removing oxides from a Ge semiconductor substrate surface |
US7238291B2 (en) | 2004-02-06 | 2007-07-03 | Interuniversitair Microelektronica Centrum (Imec) | Method for removing oxides from a Ge semiconductor substrate surface |
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