JPS59154083A - Reflection type photosensor - Google Patents
Reflection type photosensorInfo
- Publication number
- JPS59154083A JPS59154083A JP58028695A JP2869583A JPS59154083A JP S59154083 A JPS59154083 A JP S59154083A JP 58028695 A JP58028695 A JP 58028695A JP 2869583 A JP2869583 A JP 2869583A JP S59154083 A JPS59154083 A JP S59154083A
- Authority
- JP
- Japan
- Prior art keywords
- light
- light emitting
- center
- center axis
- receiving element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229920005989 resin Polymers 0.000 claims abstract description 39
- 239000011347 resin Substances 0.000 claims abstract description 39
- 235000009508 confectionery Nutrition 0.000 claims description 8
- 239000008393 encapsulating agent Substances 0.000 claims 1
- 239000004744 fabric Substances 0.000 claims 1
- 230000003287 optical effect Effects 0.000 abstract description 16
- 238000001514 detection method Methods 0.000 abstract description 7
- 230000008054 signal transmission Effects 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract 1
- 238000007789 sealing Methods 0.000 description 13
- 239000004593 Epoxy Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 235000006693 Cassia laevigata Nutrition 0.000 description 2
- 241000522641 Senna Species 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 229940124513 senna glycoside Drugs 0.000 description 2
- 239000003738 black carbon Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- WDQNIWFZKXZFAY-UHFFFAOYSA-M fentin acetate Chemical compound CC([O-])=O.C1=CC=CC=C1[Sn+](C=1C=CC=CC=1)C1=CC=CC=C1 WDQNIWFZKXZFAY-UHFFFAOYSA-M 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000011796 hollow space material Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
この発明は発光菓子からの光を被検出物体に照射し、そ
の反射光を受光素子で受光する反射型フォトセンサに関
する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a reflective photosensor that irradiates a detection object with light from a luminescent confectionery and receives the reflected light with a light receiving element.
同一装置内（二発光菓子および受光素子を有し、発光菓
子からの発光光をレンズ部を走１して被検出物体に照射
し、この被検出物体からの反射光を別のレンズ部を介し
て受光素子で受光し、上記被検出物体の有無を検知する
反射型フォトセンサは第１図の断面図に示すような構造
をしたものが使用されている。図において、ＺＯは発光
菓子、ＺＺは受光素子であり、それぞれの素子はリード
フレームＩ２□ 、１２□に配設された状態で、各々半
球レンズ部り、、Ｌ、を有する透明樹脂体１３１．１３
□内に封止されている。この発光側および受光側の透明
樹脂体１３１゜Ｉ３□は光路が塞がれないように窓を有
する不透明ケースｚ４に組み込まれ一体となっている。In the same device (having two luminescent confectioneries and a light receiving element, the luminescent light from the luminescent confectionery passes through a lens section and irradiates the object to be detected, and the reflected light from this detected object passes through another lens section. A reflective photosensor that receives light with a light-receiving element and detects the presence or absence of the object to be detected has a structure as shown in the cross-sectional view of Figure 1. In the figure, ZO is a luminous confectionery, and ZZ are light-receiving elements, and each element is arranged on lead frames I2□, 12□, and transparent resin bodies 131, 13 each having a hemispherical lens portion, , L,
□ Sealed inside. The transparent resin bodies 131°I3□ on the light emitting side and the light receiving side are integrated into an opaque case z4 having a window so that the optical path is not blocked.
この装置では、装置の前方に存在する被検出物体に能率
的に光を照射しその反射光を受光するだめに発光素子Ｉ
Ｏおよび受光素子ＺＺの正面部分（二半球レンズ部り、
、Ｌ、を形成しである。そしてさらに、発光素子１０お
よび半球レンズＬ、が形成する光の平均的進路方向（光
軸Ａｔ ）と受光素子ＩＩおよび半球レンズ部Ｌ２が形
成する光の平均的進路方向（光軸Ａ２）とが装置の１￥
ＩＪ方で交わるよう≦二、透明樹脂体１３゜１３２がや
や回い合う方向に傾けて不透明ケースＺ４（：固定され
ている。In this device, a light emitting element I is used to efficiently irradiate light onto an object to be detected in front of the device and receive the reflected light.
O and the front part of the photodetector ZZ (two hemisphere lens part,
, L, is formed. Furthermore, the average course direction of the light formed by the light emitting element 10 and the hemispherical lens L (optical axis At) and the average course direction of the light formed by the light receiving element II and the hemispherical lens part L2 (optical axis A2) are different from each other. 1 yen for the device
The opaque case Z4 (: fixed) is tilted slightly in the direction in which the transparent resin bodies 13° and 132 rotate so that they intersect in the IJ direction.
このようｆｘ 構造のフォトセンサは、まず発光素子Ｉ
Ｏあるいは受光素子ＺＺを封止する透明樹脂体ｒｓ、、
＊ｚ：ｘｆそれぞれ別個に形成した後、不透明ケースＩ
４に上１記透明・肩脂体１３□Ｉ３□をぬ：め込み形成
するため５作爲゛（性が悪く、また、上記透明樹脂体Ｉ
３□ 、１３！の傾斜がすれやすいため、光軸Ａ、、Ａ
、の光軸が合わせに＜＜、センナの光学的な検出位置の
メ、〜度を出すことが離しいという欠点があった。A photosensor with such an fx structure first has a light emitting element I.
transparent resin body rs for sealing O or the light receiving element ZZ,
* After forming each z:xf separately, opaque case I
4. Remove the above transparent resin body 13□I3□: 5 steps to form the inset (poor quality, and the above transparent resin body I
3□, 13! The optical axis A,,A
The disadvantage is that it is difficult to align the optical axes of the senna with the optical detection position of the senna.
このような装置の他に＠２図（：示すような透明樹脂体
１３． ・Ｉ３□を傾斜させることなく同一平面上（
二水平に並設したものが提案された。In addition to such a device, there is also a transparent resin body 13 as shown in Figure @2 (:).
It was proposed to install two horizontally in parallel.
このような構造のフォトセンサでは、同一リードフレー
ムＩ２上に設けられた発光素子基台部１２ａ、受光素子
基台ＺＡｂ上に発光素子２０および受光素子ＺＩをそれ
ぞれ水平に配設し、これらを半球レンズ部り、、Ｌ、を
有する透明樹脂体Ｚ３□ ５Ｚ３．で封止した後、これ
らの透明樹脂体１３．，１３□を不透明樹脂体（光透過
性樹止体）１５で一体封止して形成する。In a photosensor having such a structure, the light emitting element 20 and the light receiving element ZI are arranged horizontally on the light emitting element base part 12a and the light receiving element base ZAb provided on the same lead frame I2, and these are arranged in a hemisphere. Transparent resin body Z3□ 5Z3. After sealing with these transparent resin bodies 13. , 13□ are integrally sealed with an opaque resin body (light-transmitting resin body) 15.
このような”Ｊ Ｋでは作業性が良好で、素子の配設位
置やレンズ部り、、Ｌ、の位置精度も高いものである。With such "JK", workability is good, and the positional accuracy of the arrangement position of the element and the lens portion, L, etc. is also high.
しかしながら、因で示すように同一リードフレーム１２
（二透明樹脂体１３１．１３２を形成するものでは、受
光素子ＩＯおよびレンズ部り。However, as shown in the above, the same lead frame 12
(For those forming the two transparent resin bodies 131 and 132, the light receiving element IO and the lens part.
と受光素子ＺＺおよびレンズ部り、との間（：角度を与
えることかできず、光軸Ａ、とＡ２との交点すなわち被
検出物体の検出位置を設定することができない。従って
発光光の被検出物体における反射点方向へ受光側の光軸
Ａ、を向けることができず受光素子ＩＩが反射光を効率
良く受光できないため１発光素子ＩＯから受光素子１１
Ｃ至る信書の伝達効率が著しく低かった。and the light-receiving element ZZ and the lens part (: it is not possible to give an angle, and it is not possible to set the intersection of the optical axes A and A2, that is, the detection position of the object to be detected. Since the optical axis A on the light-receiving side cannot be directed toward the reflection point on the detection object, and the light-receiving element II cannot efficiently receive the reflected light, the light-receiving element 11 is moved from the light-emitting element IO to the light-receiving element 11.
The efficiency of communicating letters to C was extremely low.
この発明は上記のような点に麹みてなされたものでその
目的とするところは、高い作業性で製造でき、素子やレ
ンズ部の高い位置精度を確保した上で高い信号伝達率を
得ることのできる反射型フォトセンサを提供すること（
二ある。This invention was made in consideration of the above points, and its purpose is to manufacture with high workability, ensure high positional accuracy of the element and lens part, and obtain a high signal transmission rate. To provide a reflective photosensor that can
There are two.
すなわちこの発明に係る反射型フォトセンサでは、リー
ドフレームの同一平面上に発光素子と受光界子とを配設
し、少なくとも一方の半球レンズ部の中心が上記素子の
配役位置よりも他方の素子側に水平にずれた位置となる
ようＣ二それぞれの素子を半球レンズを備えた透明樹脂
体により封止し、さらに不透明樹脂（二より上記透明樹
脂体を一体封止するよう監ユしたものである。That is, in the reflective photosensor according to the present invention, the light emitting element and the light receiving field are arranged on the same plane of the lead frame, and the center of at least one hemispherical lens part is located closer to the other element than the placement position of the above element. Each element of C2 was sealed with a transparent resin body equipped with a hemispherical lens so that the two elements were horizontally shifted from each other, and then an opaque resin (2) was supervised to integrally seal the above-mentioned transparent resin body. .
以下図面を参照してこの発明の一実施例を説明する。第
３図はその一例を示す斜視図、第４因は第３図の装置の
ト→′断面を示す因である。An embodiment of the present invention will be described below with reference to the drawings. FIG. 3 is a perspective view showing one example, and the fourth factor is a factor showing a cross section of the apparatus shown in FIG.
図において、まず外部導出リード１２ｃ、ｚ：ｌｄの先
端部の発光素子基台部１２ａおよび受光素子基台部１２
ｂに各々尋°覗性エポキシ等によって、発光素子ＩＯお
よび受光素子１１を取着し、金線等（二よって近接する
外部導出リードＩ ２ ｃ’Ｚ ２ ｄ’ｌニワイヤボ
ンテイングを行なう。（ｉｓ ４因では図面を簡明ζユ
するためホンティングワイヤは省略する。）
この後、上記リードフレームＩ２−を樹脂封止用金型で
挾み、例えは透明エポキシなどの光透過性樹脂を金型内
の中空に注入して発光素子ＩＯおよび受光素子ＩＩのそ
れぞれを同時に樹脂封止（いわゆるトランスファモール
トノする。In the figure, first, the light emitting element base part 12a and the light receiving element base part 12 at the tips of the external lead-out leads 12c and z:ld are shown.
The light-emitting element IO and the light-receiving element 11 are attached to each part b using transparent epoxy or the like, and wire bonding is performed with gold wire or the like (two adjacent external leads I 2 c'Z 2 d'l). (In order to simplify the drawings, the honting wire is omitted for IS 4 factors.) After this, the lead frame I2- is sandwiched between resin sealing molds, and a light-transmitting resin such as transparent epoxy is inserted into the lead frame I2-. The light-emitting element IO and the light-receiving element II are simultaneously sealed with resin (so-called transfer molding) by injecting the resin into the hollow space in the mold.
ここでこの樹脂封止により形成された発光側樹脂封止体
１３．および受光側樹脂封止体１３２ ′はそれぞれ
半球レンズ−Ｌ、、Ｌ、を有して成る。Here, the light emitting side resin sealing body 13 formed by this resin sealing. The light-receiving side resin sealing body 132' includes hemispherical lenses -L, , L, respectively.
これらレンズＬ１ 、Ｌ、と発光素子１０および受光素
子ＺＩの位置関係は、第４−（二示すようにレンズ部Ｌ
□ 、Ｌ２の中心ＡＬ、 、ＡＬＲと発光素子１０およ
び受光素子２２の中心Ａｓ１ 、ＡＡｓ、とが水平方向
゛にずれるようにする。すなわち発光素子２０の中心Ａ
Ｂ １に対し発光側の半球レンズＬ、の中心軸ＡＬ、
を装置の中心部すなわち受光素子側に片寄った位置に水
平にｆらずようにする。同様（：、受光側の半球レンズ
Ｌ、の中心軸ＡＬ、を装置の中心部すなわち発光素子側
に水平にすらずよう（二する。The positional relationship between these lenses L1, L, the light emitting element 10, and the light receiving element ZI is as shown in the lens part L
The centers AL, , ALR of □, L2 and the centers As1, AAs, of the light emitting element 10 and the light receiving element 22 are made to be shifted in the horizontal direction. That is, the center A of the light emitting element 20
The central axis AL of the hemispherical lens L on the light emitting side with respect to B1,
The center of the device, that is, the light-receiving element should not be placed horizontally in a position that is biased toward the center of the device. Similarly, the central axis AL of the hemispherical lens L on the light-receiving side should not be horizontal to the center of the device, that is, the light-emitting element side.
以上のような形状の樹脂封止体Ｚ３□、１３□を形成し
た後、不透明エポキシ樹ｈ口（通常は黒色カーボン入す
エボキシ個脂〕を用いた自長のトランスファモール白：
よって、半球レンズ部り、およびＬ２を塞がないように
光路窓Ｗ１ 。After forming the resin sealing bodies Z3□, 13□ with the above shape, a free-length transfer mold white using an opaque epoxy resin (usually epoxy solid resin containing black carbon):
Therefore, the optical path window W1 is arranged so as not to block the hemispherical lens portion and L2.
ｖｖ、を有する光不透過性樹脂体Ｉ５を形成し、上記発
光側樹脂封圧体Ｉ３□ 、Ｚ３□を一体的に固定する。A light-impermeable resin body I5 having a shape of vv is formed, and the light emitting side resin sealing bodies I3□ and Z3□ are integrally fixed.
この後、リードフレームＺ２の枠部１２Ｆやタイバーｒ
ｅＴ等の不要箇所を切断して反射型フォトセンサと収１
−０
〔発明の効果〕
上記のようにして形成した反射型フォトセンサにおいて
、発光素子１０からの発光光の平均的進路方向は、発光
素子１０の中心から半球レンズＬ、の中心を結ぶ方向と
なるが１発光素子ＩＯの中心と発光側半球レンズ部り、
の中、心とがずれているため、発光光の進行方向すなわ
ち光ｌＰｔ１ＩＩＡＩは斜め前方にやや傾斜し、同様に
受光側における光の進行方向すなわち光軸Ａ、も傾斜し
て斜め前方からの光が最も効率良（受光される。従って
第４因の装置は、光軸Ａ、および光軸Ａ２の交点Ｂ上に
水平面を有する反射物体Ｃに対して最も感団艮（検知で
き、光学的な特性は、第１図で示した発光側樹脂封圧体
と受光側樹脂封止体との間に角ｒｔ＝持たせたものと殆
んど等価となる。この第４四の装置では、＠２図の装置
に比らべ約５〜ｌＯ倍の商い信号伝達率を得ることがで
きた。After this, the frame portion 12F of the lead frame Z2 and the tie bar r
Cut unnecessary parts such as eT and combine it with a reflective photo sensor.
-0 [Effect of the invention] In the reflective photosensor formed as described above, the average course direction of the emitted light from the light emitting element 10 is the direction connecting the center of the light emitting element 10 to the center of the hemispherical lens L. The center of one light-emitting element IO and the light-emitting side hemisphere lens part,
Since the center and center of the center are shifted, the traveling direction of the emitted light, that is, the light lPt1IIAI, is slightly tilted diagonally forward, and similarly, the traveling direction of the light on the light receiving side, that is, the optical axis A, is also tilted, so that the light from diagonally ahead is the most efficient (light is received).Therefore, the device of the fourth factor is the most sensitive (detectable and optically The characteristics are almost equivalent to those shown in Fig. 1, where the angle rt=is created between the light-emitting side resin sealing body and the light-receiving side resin sealing body.In this 44th device, @ It was possible to obtain a signal transmission rate approximately 5 to 10 times higher than that of the device shown in Figure 2.
また、上記の装置では、発光側樹脂封止体および受光側
樹脂封止体に角Ｉｔ持たせたものと略同等の光学的特性
を、単に発光素子および受光素子とそれぞれの素子上に
設けられた半球レンズＬ１およびＬ８との水平位（ｉｔ
ｔ％ｉ係ｐｃ Ｊ”らすだけで容易に得ることができる
。In addition, in the above device, optical characteristics substantially equivalent to those in which the light-emitting side resin molding body and the light-receiving side resin molding body have an angle It are obtained by simply providing the light-emitting element, the light-receiving element, and the respective elements. horizontal position with hemispherical lenses L1 and L8 (it
It can be easily obtained by simply increasing the t%i ratio pc J''.
言い換えると、この装置では、第１因の装置の製造方法
のような煩雑な製造方法によらず。In other words, this device does not require a complicated manufacturing method like the method of manufacturing the device of the first cause.
樹脂上１止体形成用の金型を変更することなしく二リー
ドフレーム１２上の素子の載置位とを変更するだけで、
フォトセンサの検出位置ｋ ’４々に設定することも可
能である。しかも、レンズ部等の発光および受光側樹脂
封止体の形状および位置の精度は金型の精度で決定され
るため第１図の装置（二比べ光の進行方向（光軸Ａ、Ｉ
Ａ、）を精度良く決定することができる。2. Simply change the placement position of the element on the lead frame 12 without changing the mold for forming the stopper on the resin.
It is also possible to set the detection position k' of the photosensor at four positions. Moreover, since the precision of the shape and position of the light emitting and light receiving side resin sealing body of the lens part etc. is determined by the precision of the mold, the device shown in Fig.
A,) can be determined with high accuracy.
なお、上記実施例では１発光側の光軸Ａ１と受光側の光
軸Ａ２ とを素子の配設される平面に対して同角度で傾
斜させる場合につき述べたが、これは発光素子基台いは
受光素子側の一方の光軸のみをイ頃斜させるよう（ニジ
ても良い。Note that in the above embodiment, the case where the optical axis A1 on the light emitting side and the optical axis A2 on the light receiving side are inclined at the same angle with respect to the plane on which the element is arranged is described, but this is not possible with the light emitting element base. In this case, only one optical axis on the light-receiving element side is tilted to the right (it may also be tilted to the right).
以上述べたよう（：この発明によれば、第２因に示す従
来の反射型フォトセンサ≦二比べて高い信号伝達効率を
有し、被検出物体の検出距離も簡易に精度良（設定でき
、作業性良く製造できる反射型フォトセンサを提供する
ことができる。As stated above (: According to the present invention, the signal transmission efficiency is higher than that of the conventional reflective photosensor shown in the second factor ≦2, and the detection distance of the detected object can be easily set with high precision. A reflective photosensor that can be manufactured with good workability can be provided.
第１図および第２図はそれぞれ従来の反射型フォトセン
サを示す断面図、第３図および第４図はそれぞれこの発
明の一実施例（二係る反射型フォトセンサを説明する斜
視図および断面図である。
１０・・・発光素子、２２・・・受光素子、１２・・・
リードフレーム、１２ａ・・・発光素子基台、１２ｂ・
・・受光素子基台、Ｉ３１・・・発光側樹脂封止体、１
３、・・・受光側倒１Ｌ封止体、Ｉ５・・・光不透過性
樹脂体、Ｌ、、’Ｌ、・・・半球レンズ部（凸レンズ部
］、Ａ１ 、Ａ、・・・光軸。
出願人代理人 弁理士 鈴２．江 武 彦第１図
第２図
第４図1 and 2 are sectional views showing a conventional reflective photosensor, respectively, and FIGS. 3 and 4 are a perspective view and a sectional view illustrating an embodiment of the present invention (2). 10... Light emitting element, 22... Light receiving element, 12...
Lead frame, 12a... light emitting element base, 12b...
... Light-receiving element base, I31 ... Light-emitting side resin sealing body, 1
3. Light-receiving side facing 1L sealing body, I5... Light-opaque resin body, L, , 'L,... Hemispherical lens part (convex lens part), A1, A,... Optical axis . Applicant's agent Patent attorney Suzu 2. Takehiko E Figure 1 Figure 2 Figure 4
Claims (1)
子基台を有するリードフレームと、上記発光素子基台お
よび受光素子基台の同一方向面上にそれぞれ並設された
発光菓子および受光素子と、上記発光菓子および受光素
子の各々を封止し上面に凸レンズ部を荷する光透過性信
服から成る発光側樹脂封止体および受光側偵脂封止体と
、この発光側樹脂封止体および受光側樹脂封止体のそれ
ぞれを一体的≦ユ固足する光不透過性樹脂体とを具誦し
、上記凸レンズの少なくとも一万のレンズ中心がこの凸
レンズ下の素子の菓子中心軸から他方の菓子の菓子中心
軸方間に水平にすれた位置関係にあることを特徴と°す
る反射型フォトセンサ。A lead frame having a light-emitting element base and a light-receiving element base in separate parts on the same plane, and a light-emitting confectionery and a light-receiving element arranged in parallel on the same direction surface of the light-emitting element base and the light-receiving element base, respectively. , a light-emitting-side resin-sealed body and a light-receiving-side grease-sealed body made of a light-transmitting fabric that seals each of the light-emitting confectionery and the light-receiving element and has a convex lens portion on the upper surface; Each of the light-receiving side resin encapsulants is integrated with a light-impermeable resin body, and at least 10,000 lens centers of the convex lenses are connected from the center axis of the confectionery of the element under the convex lenses to the other side. A reflective photosensor characterized by being horizontally aligned with the center axis of a confectionery.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58028695A JPS59154083A (en) | 1983-02-23 | 1983-02-23 | Reflection type photosensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58028695A JPS59154083A (en) | 1983-02-23 | 1983-02-23 | Reflection type photosensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59154083A true JPS59154083A (en) | 1984-09-03 |
Family
ID=12255609
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58028695A Pending JPS59154083A (en) | 1983-02-23 | 1983-02-23 | Reflection type photosensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59154083A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6410620U (en) * | 1987-07-10 | 1989-01-20 | ||
| US5105239A (en) * | 1989-08-11 | 1992-04-14 | Kabushiki Kaisha Toshiba | Reflective type optical sensor device |
| EP0510516A2 (en) * | 1991-04-24 | 1992-10-28 | Dr. Johannes Heidenhain GmbH | Sensor device on a substrate with an electrical link element and procedure to fabricate such a device |
| CN100414258C (en) * | 2004-07-26 | 2008-08-27 | 夏普株式会社 | Reflective encoder and electronic device using such reflective encoder |
| JP2009210422A (en) * | 2008-03-04 | 2009-09-17 | Sony Corp | Probe device and terahertz spectroscopic apparatus |
| JP2011107019A (en) * | 2009-11-19 | 2011-06-02 | Yamatake Corp | Photoelectric sensor |
| TWI401421B (en) * | 2005-10-26 | 2013-07-11 | Avago Tech Ecbu Ip Sg Pte Ltd | Reflective encoders with various emitter-detector configurations |
| WO2014054420A1 (en) * | 2012-10-05 | 2014-04-10 | 株式会社村田製作所 | Light sensor |
-
1983
- 1983-02-23 JP JP58028695A patent/JPS59154083A/en active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6410620U (en) * | 1987-07-10 | 1989-01-20 | ||
| US5105239A (en) * | 1989-08-11 | 1992-04-14 | Kabushiki Kaisha Toshiba | Reflective type optical sensor device |
| EP0510516A2 (en) * | 1991-04-24 | 1992-10-28 | Dr. Johannes Heidenhain GmbH | Sensor device on a substrate with an electrical link element and procedure to fabricate such a device |
| CN100414258C (en) * | 2004-07-26 | 2008-08-27 | 夏普株式会社 | Reflective encoder and electronic device using such reflective encoder |
| TWI401421B (en) * | 2005-10-26 | 2013-07-11 | Avago Tech Ecbu Ip Sg Pte Ltd | Reflective encoders with various emitter-detector configurations |
| JP2009210422A (en) * | 2008-03-04 | 2009-09-17 | Sony Corp | Probe device and terahertz spectroscopic apparatus |
| JP2011107019A (en) * | 2009-11-19 | 2011-06-02 | Yamatake Corp | Photoelectric sensor |
| WO2014054420A1 (en) * | 2012-10-05 | 2014-04-10 | 株式会社村田製作所 | Light sensor |
| JP5949931B2 (en) * | 2012-10-05 | 2016-07-13 | 株式会社村田製作所 | Optical sensor |
| JPWO2014054420A1 (en) * | 2012-10-05 | 2016-08-25 | 株式会社村田製作所 | Optical sensor |
| US10261182B2 (en) | 2012-10-05 | 2019-04-16 | Murata Manufacturing Co., Ltd. | Optical sensor |
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