JPS59154060A - Photosensor array - Google Patents
Photosensor arrayInfo
- Publication number
- JPS59154060A JPS59154060A JP58027577A JP2757783A JPS59154060A JP S59154060 A JPS59154060 A JP S59154060A JP 58027577 A JP58027577 A JP 58027577A JP 2757783 A JP2757783 A JP 2757783A JP S59154060 A JPS59154060 A JP S59154060A
- Authority
- JP
- Japan
- Prior art keywords
- film
- type
- blocking diode
- gas
- amorphous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000000903 blocking effect Effects 0.000 claims abstract description 18
- 230000003287 optical effect Effects 0.000 claims description 7
- 239000000470 constituent Substances 0.000 claims 1
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 11
- 239000000758 substrate Substances 0.000 abstract description 10
- 230000007547 defect Effects 0.000 abstract description 8
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract description 6
- 238000000354 decomposition reaction Methods 0.000 abstract description 6
- 239000011521 glass Substances 0.000 abstract description 5
- 238000001514 detection method Methods 0.000 abstract 3
- 238000003475 lamination Methods 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/095—Devices sensitive to infrared, visible or ultraviolet radiation comprising amorphous semiconductors
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は膜欠陥を減少させ生産歩留を向上させたアモー
７アスシリコン膜よりなる光センサアレイに関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a photosensor array made of an Amor7As silicon film that reduces film defects and improves production yield.
近年ファクシミリ装置を小形化するため、従来装置で大
形となる原因をなしていた光学系を除去し、原稿にほと
んど密着して大形光センサアレイを配置することが提案
されている。In recent years, in order to downsize facsimile machines, it has been proposed to remove the optical system, which was the cause of the large size of conventional facsimile machines, and to arrange a large photosensor array almost in close contact with the document.
しかし例えばＡ４判の原稿の読取には、長さ約２１６１
１１にも及ぶ長い光センサアレイが必要となり、読取精
度１／８鵬ピツチを得ようとすると、この光センサアレ
イは１７２８ビツトの読取素子が必要で、これら全素子
に欠陥があってはならない。また１７２８ビツトの読取
素子に、それぞれ同様な引出し線を設けて、各線全部に
開閉素子を設けるのは困難であるから、通常はマ） Ｉ
Ｊクス配線を用いるが、この場合はクロストーク防止の
ため、各素子ごとにブロッキングダイオードが必要とな
る。結局光センサアレイとしては一基板上に、光検出素
子１７２８個、ブロッキングダイオード１７２８個、合
計３４５６個の素子を無欠陥で作らねばならず、生産歩
留向上が困難という問題があった。However, for example, to read an A4 size document, the length is approximately 2161 mm.
An optical sensor array as long as 11 is required, and in order to obtain a reading accuracy of 1/8 pitch, this optical sensor array requires 1728 bit reading elements, and all of these elements must be free of defects. In addition, it is difficult to provide similar lead lines for each 1728-bit reading element and provide opening/closing elements for each line, so it is usually
Jx wiring is used, but in this case a blocking diode is required for each element to prevent crosstalk. In the end, as a photosensor array, 1728 photodetecting elements and 1728 blocking diodes, a total of 3456 elements, had to be manufactured without defects on one substrate, making it difficult to improve production yield.
本発明の目的は生産歩留が比較的良好な光センサアレイ
を提供することにある。An object of the present invention is to provide a photosensor array with relatively good production yield.
上記目的を達成するために本発明においては、アモーフ
ァスシリコン膜を用いる場合においても、この膜を設け
るガラス基板の汚れや凹凸の有無により欠陥の発生が左
右されることに着目し、光検出素子やブロッキングダイ
オードを設けるガラス基板面積を極力狭くするため、光
入射方向は、光入射側から順次、アモーファスシリコン
膜の積層構造により、光検出素子と、その素子のための
直列接続ブロッキングダイオードを形成させるようにし
た。この様にすることにより、同一基板上に光検出素子
とブロッキングダイオードを横に並列配置した場合に比
し欠陥発生確率をほぼ半減することができた。In order to achieve the above object, the present invention focuses on the fact that even when an amorphous silicon film is used, the occurrence of defects is influenced by the presence or absence of dirt and unevenness on the glass substrate on which the film is provided, and In order to minimize the area of the glass substrate where the blocking diode is to be installed, the photodetecting element and the series-connected blocking diode for the element are formed using a laminated structure of amorphous silicon films sequentially from the light incident side. I tried to let him do it. By doing so, it was possible to reduce the probability of defect occurrence by approximately half compared to the case where the photodetector element and the blocking diode were arranged horizontally in parallel on the same substrate.
以下本発明を図面により説明する。第１図は光センサア
レイのマトリクス配線要部を示し、１は共通電極、２は
光検出素子、３はブロッキングダイオード、４は個別電
極である。こうすれば、例えば１７２８素子を７２素子
×２４群にすることにより、スイッチの個数を共通側２
４個、個別側７２個、合計、゛−個、ヵ＠よ減少、きる
。（図示例、よ３素子、２群。）第２図は本発明一実施
例の素子要部断面図で、５は上部電極、・６はブロッキ
ングダイオード、７は光検出素子、８は下部電極、９は
ガラス基板である。具体的には、基板上に、Ｓ ｉＨ４
ガスをプラズマ分解して五形アモーファスシリコン膜よ
りなる光検出素子７の層を形成させ、次にＳｉＨ，ガス
とＢ２Ｈ，ガスをプラズマ分解したｐ形アモーファスシ
リコン！、ＳｉＨ４ガスをプラズマ分解したｉ形アモー
ファスシリコン膜、ＳｉＨ，ガスとＰＨ３ガスをプラズ
マ分解したｎ形アモー７アスシリコン膜を、順次積層し
てｐ−１−ｎ形のブロッキングダイオード６０層を形成
させ、そののち上記各層をＣＦ、プラズマで微細加工す
ることによって、ｉ形の光検出部とｐ−１−ｎ形のブロ
ッキングダイオード部が積層したプレイが得られる。The present invention will be explained below with reference to the drawings. FIG. 1 shows the main parts of the matrix wiring of the optical sensor array, in which 1 is a common electrode, 2 is a photodetector element, 3 is a blocking diode, and 4 is an individual electrode. In this way, for example, by forming 1728 elements into 72 elements x 24 groups, the number of switches can be reduced to 2 on the common side.
4 pieces, 72 pieces on the individual side, total, ゛- pieces, decrease by @. (Illustrated example: 3 elements, 2 groups.) Fig. 2 is a cross-sectional view of the main parts of an element according to an embodiment of the present invention, where 5 is an upper electrode, 6 is a blocking diode, 7 is a photodetector element, and 8 is a lower electrode. , 9 is a glass substrate. Specifically, on the substrate, SiH4
The gas is plasma decomposed to form a layer of the photodetecting element 7 made of a pentamorphous silicon film, and then SiH, gas and B2H are formed, and p-type amorphous silicon is formed by plasma decomposing the gas! , an i-type amorphous silicon film obtained by plasma decomposition of SiH4 gas, and an n-type amorphous silicon film obtained by plasma decomposition of SiH gas and PH3 gas are sequentially laminated to form 60 layers of a p-1-n type blocking diode. Then, by finely processing each of the above layers using CF and plasma, a play in which an i-type photodetection section and a p-1-n type blocking diode section are laminated can be obtained.
なお、光検出素子をｉ形成のみとするかわりにｐ−４−
ｎ形あるいはｎ−１−ｐ形のホトソ°イオードにしても
よ（、また、ブロッキングダイオードを必要に応じて逆
向きにしても、同様の効果が得られる。Note that instead of using only the i-forming photodetecting element, p-4-
The same effect can be obtained by using an n-type or n-1-p type photodiode (or by reversing the blocking diode as necessary).
以上説明したように本発明によれば、アモーフアスシリ
コン膜よりなる大形光センサアレイの基板に起因する膜
欠陥をほぼ半減することができる。As explained above, according to the present invention, film defects caused by the substrate of a large optical sensor array made of an amorphous silicon film can be reduced by approximately half.
第１図は光センサアレイのマ） ＩＪクス配線要部を示
す図、第２図は本発明一実施例の素子要部断面図である
。
１・・・共通電極、２・・・光検出素子、３・・・ブロ
ッキングダイオード、４・・・個別電極、５・・・上部
電極、６・・・ブロッキングダイオード、７・・・光検
出素子、８・・・下部電極、９・・・ガラス基板。
・く二、・′
第 １ 図FIG. 1 is a diagram showing the main part of the IJ wiring of the optical sensor array, and FIG. 2 is a sectional view of the main part of an element according to an embodiment of the present invention. DESCRIPTION OF SYMBOLS 1... Common electrode, 2... Photodetection element, 3... Blocking diode, 4... Individual electrode, 5... Upper electrode, 6... Blocking diode, 7... Photodetection element , 8... lower electrode, 9... glass substrate.・Kuni, ・′ Figure 1
Claims (1)
ードとを構成単位とするマトリクス配線した光センサア
レイにおいて、光入射方向に、アモー７ァスシリスン膜
の積層構造により、光入射側から順次、光検出素子と、
この素子に直列接続したブロッキングダイオードを形成
させたことを特徴とする光センサアレイ。In a matrix-wired optical sensor array in which a photodetecting element and a blocking diode for preventing crosstalk are used as constituent units, the photodetecting element and the blocking diode for preventing crosstalk are sequentially connected from the light incident side in the light incident direction by a laminated structure of AMO7 series films.
A photosensor array characterized by forming a blocking diode connected in series to this element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58027577A JPS59154060A (en) | 1983-02-23 | 1983-02-23 | Photosensor array |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58027577A JPS59154060A (en) | 1983-02-23 | 1983-02-23 | Photosensor array |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59154060A true JPS59154060A (en) | 1984-09-03 |
Family
ID=12224833
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58027577A Pending JPS59154060A (en) | 1983-02-23 | 1983-02-23 | Photosensor array |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59154060A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4868383A (en) * | 1988-09-08 | 1989-09-19 | Eastman Kodak Company | Linear integrating cavity light source used for generating an intense beam of light |
-
1983
- 1983-02-23 JP JP58027577A patent/JPS59154060A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4868383A (en) * | 1988-09-08 | 1989-09-19 | Eastman Kodak Company | Linear integrating cavity light source used for generating an intense beam of light |
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