JPS59152849U - Avalanche photodiode bias circuit - Google Patents

Avalanche photodiode bias circuit

Info

Publication number
JPS59152849U
JPS59152849U JP1983044325U JP4432583U JPS59152849U JP S59152849 U JPS59152849 U JP S59152849U JP 1983044325 U JP1983044325 U JP 1983044325U JP 4432583 U JP4432583 U JP 4432583U JP S59152849 U JPS59152849 U JP S59152849U
Authority
JP
Japan
Prior art keywords
avalanche photodiode
output
circuit
amplifier
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1983044325U
Other languages
Japanese (ja)
Inventor
沖川 孝生
Original Assignee
株式会社東芝
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社東芝 filed Critical 株式会社東芝
Priority to JP1983044325U priority Critical patent/JPS59152849U/en
Publication of JPS59152849U publication Critical patent/JPS59152849U/en
Pending legal-status Critical Current

Links

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来のアバランシェフォトダイオードを用いた
光受信器におけるAGC回路の一構成図、第2図は従来
のアバランシェフォトダイオードを用いた光受信器にお
けるAGC回路の他の構成図、第3図は本考案によるア
バランシェフォトダイオードのバイアス回路を用いた光
受信器におけるAGC回路の構成図、第4図は第3図に
示したアバランシェフォトダイオードのバイアス回路の
要部構成図である。 1・・・APD(アバランシェフォトダイオード)、2
・・・増幅器、3・・・識別器、4・・・ピーク検波器
、5・・・増幅器、6・・・DC/DCコンバータ、7
・・・加算回路、8・・・リミッタ電圧発生回路、10
・・・温度補償用ダイオード、41.42・・・オペア
ンプ。
Fig. 1 is a configuration diagram of an AGC circuit in an optical receiver using a conventional avalanche photodiode, Fig. 2 is another configuration diagram of an AGC circuit in an optical receiver using a conventional avalanche photodiode, and Fig. 3 4 is a block diagram of an AGC circuit in an optical receiver using an avalanche photodiode bias circuit according to the present invention, and FIG. 4 is a block diagram of main parts of the avalanche photodiode bias circuit shown in FIG. 3. 1...APD (avalanche photodiode), 2
...Amplifier, 3...Discriminator, 4...Peak detector, 5...Amplifier, 6...DC/DC converter, 7
...Addition circuit, 8...Limiter voltage generation circuit, 10
...temperature compensation diode, 41.42... operational amplifier.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] アバランシェフォトダイオードの電気出力を増幅器にて
増幅し、この増幅器の出力を検波回路で検波し、この検
波回路の出力にて前記アバランシェフォトダイオードの
バイアスを制御すべく帰環をかけるアバランシェフォト
ダイオードのバイアス回路において、前記アバランシェ
フォトダイオードのブレークダウン電圧の温度変化と同
程度の温度変化を行う電圧を出力する温度補償用ダイオ
ード及び、この温度補償用ダイオードの出力を増幅して
温度補償量の設定を行う直流増幅器を有するリミッタ電
圧発生回路と、前記リミッタ電圧発生回路の出力と前記
検波回路出力とを加算する加算器とを備え、前記アバラ
ンシェフォトダイオードのブレークダウン電圧の温度変
化に伴いリミット電圧を温度補償するようにしたことを
特徴とするアバランシェフォトダイオードのバイアス回
路。
The electrical output of the avalanche photodiode is amplified by an amplifier, the output of this amplifier is detected by a detection circuit, and the output of this detection circuit is used to control the bias of the avalanche photodiode. In the circuit, a temperature compensation diode outputs a voltage that causes a temperature change comparable to a temperature change in the breakdown voltage of the avalanche photodiode, and the output of this temperature compensation diode is amplified to set a temperature compensation amount. It includes a limiter voltage generation circuit having a DC amplifier and an adder that adds the output of the limiter voltage generation circuit and the output of the detection circuit, and temperature compensates the limit voltage according to the temperature change of the breakdown voltage of the avalanche photodiode. An avalanche photodiode bias circuit characterized by:
JP1983044325U 1983-03-29 1983-03-29 Avalanche photodiode bias circuit Pending JPS59152849U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1983044325U JPS59152849U (en) 1983-03-29 1983-03-29 Avalanche photodiode bias circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1983044325U JPS59152849U (en) 1983-03-29 1983-03-29 Avalanche photodiode bias circuit

Publications (1)

Publication Number Publication Date
JPS59152849U true JPS59152849U (en) 1984-10-13

Family

ID=30174859

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1983044325U Pending JPS59152849U (en) 1983-03-29 1983-03-29 Avalanche photodiode bias circuit

Country Status (1)

Country Link
JP (1) JPS59152849U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63187672A (en) * 1987-01-30 1988-08-03 Nippon Telegr & Teleph Corp <Ntt> Apd bias circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63187672A (en) * 1987-01-30 1988-08-03 Nippon Telegr & Teleph Corp <Ntt> Apd bias circuit

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