JPS59151514A - Manufacture of lithium niobate single crystal element - Google Patents
Manufacture of lithium niobate single crystal elementInfo
- Publication number
- JPS59151514A JPS59151514A JP1373483A JP1373483A JPS59151514A JP S59151514 A JPS59151514 A JP S59151514A JP 1373483 A JP1373483 A JP 1373483A JP 1373483 A JP1373483 A JP 1373483A JP S59151514 A JPS59151514 A JP S59151514A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- plane
- single crystal
- line
- intersection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 22
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 title claims abstract description 17
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 238000005520 cutting process Methods 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 5
- 238000003776 cleavage reaction Methods 0.000 abstract description 2
- 230000007017 scission Effects 0.000 abstract description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010897 surface acoustic wave method Methods 0.000 description 2
- 210000000988 bone and bone Anatomy 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は、弾性表面波フィルタ用のニオブ酸リチウム単
結晶素子の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a method for manufacturing a lithium niobate single crystal element for a surface acoustic wave filter.
従来、弾性表面波フィルタ用の主要部分である素子は、
ニオブ酸リチウム(LiNb0. )単結晶のインゴッ
トから切出したウェハから、ダイシング加工によシ溝入
れした後、割断することによシ製造されていた。ところ
が、従来のダイシング加工においては、ダイシングライ
ンが、ニオブ酸リチウム(LiNbO5)単結晶の骨間
面とウェハ表面との交線方向に必ずしも一致していなか
った。そのため、研削砥石によるダイシング加工時には
、骨間によ多素子を分断する割れや欠けが発生しやすく
、製品歩留シが低下したシ、切り込み深さが大きい為に
ダイシング用の研削砥石の摩耗が著しくなり、研削能率
が低下するという問題を惹起していた。Conventionally, the main components for surface acoustic wave filters are:
It was manufactured by cutting a wafer from a lithium niobate (LiNb0.) single crystal ingot, dicing it to make grooves, and then cutting it. However, in conventional dicing processing, the dicing line does not necessarily coincide with the direction of intersection between the interosseous surface of the lithium niobate (LiNbO5) single crystal and the wafer surface. Therefore, during the dicing process using a grinding wheel, cracks and chips that separate multiple elements are likely to occur between the bones, resulting in a decrease in product yield, and the large cutting depth causes wear of the grinding wheel for dicing. This caused the problem of reduced grinding efficiency.
割れ、欠けの発生を極力防止できるニオブ酸リチウム単
結晶素子の製造方法を提供することにある。An object of the present invention is to provide a method for manufacturing a lithium niobate single crystal element that can prevent cracking and chipping as much as possible.
ニオブ酸リチウム単結晶の骨間面とウェハ表面との交線
方向にダイシング加工するようにしたものである。Dicing is performed in the direction of the intersection between the interosseous surface of the lithium niobate single crystal and the wafer surface.
以下、本発明を図面を参照して実施例に基づいて説明す
る。Hereinafter, the present invention will be explained based on examples with reference to the drawings.
まず、図示せぬ単結晶製造装置によシ、ニオブ酸リチウ
ム単結晶を製造したのち、第1図に示すニオブ酸リチウ
ムの六方単位胞のY−Z面において、Y軸から2軸方向
にu度回転した直線Aがウェハ面の法線となるように、
図示せぬスライシング装置によりウェハ(2)を64度
回転Yカットする。〜このときのニオブ酸リチウム単結
晶の璧開面は0、(1012)、 (0112)、 (
1102)面となっているが、たとえば労開面(110
2)、 (0112)とウェハ(2)の主面であるウェ
ハ面との交線方向は、第2図に示すように、オリ7う面
(3)と一定の角度関係にあるM方向及びN方向となる
ように設定されている。すなわち、M方向は、骨間面(
1102)とウェハ面との交線に平行な方向、またN方
向は、骨間面(0112)とウェハ面との交線に平行な
方向である。そこで、ニオブ酸リチウム単結晶のインゴ
ット製造後、骨間面(1102)ヲX li 回折Kj
夛filil定L、上記労tJm(txo2:のウェハ
面との交線と、オリフラ面(3)とウェハ面との交線と
が、平行になるように、オリ72面(3)を研削加工に
よ多形成する。したがって、上記M方向はオリ72面(
3)とウェハ面との交線に対して平行になっている。し
かして、ウェハ(2)を上記オリ72面(3)を基準と
して、一定位置に保持し、図示せぬダイシング装置によ
シ、そのダイシングラインが、上記M方向及びN方向に
平行な方向となるように所定間隔ごとにダイシング加工
し、第2図で示すような切除溝である一方の第1のダイ
シングライン(4)・・・(N方向に平行)と、これら
第1のダイシングライン(4)・・・に交差する第2の
ダイシングライン(5)・パ・(M方向に平行)を形成
する。しかるのち分割加工によシ割断じて、第3図に示
すようなニオブ酸リチウム単結晶素子(6)を得る。こ
の素子(6)の隅角θ1.θ2は、それぞれ50度及び
130度である。First, after manufacturing a lithium niobate single crystal using a single crystal manufacturing apparatus (not shown), in the Y-Z plane of the hexagonal unit cell of lithium niobate shown in FIG. so that the straight line A rotated by a degree becomes the normal to the wafer surface.
The wafer (2) is rotated 64 degrees and Y-cut using a slicing device (not shown). ~ At this time, the crystal opening planes of the lithium niobate single crystal are 0, (1012), (0112), (
1102), but for example, the Labor Kai (110)
2), The direction of intersection of (0112) and the wafer surface, which is the main surface of the wafer (2), is the M direction and the direction M, which has a constant angular relationship with the surface (3) of the ori 7, as shown in FIG. It is set to be in the N direction. That is, the M direction is the interosseous surface (
The direction parallel to the line of intersection between the interosseous surface (0112) and the wafer surface, and the N direction is the direction parallel to the line of intersection between the interosseous surface (0112) and the wafer surface. Therefore, after producing an ingot of lithium niobate single crystal, the interosseous surface (1102)
Grind the ori 72 surface (3) so that the line of intersection of the tJm (txo2) with the wafer surface and the line of intersection of the orientation flat surface (3) and the wafer surface are parallel to each other. Therefore, the above M direction is aligned with the ori 72 plane (
3) and the wafer surface. Then, the wafer (2) is held at a fixed position with respect to the surface (3) of the ori 72 and placed in a dicing device (not shown) so that the dicing line is parallel to the M direction and the N direction. Dicing is performed at predetermined intervals so that one first dicing line (4)...(parallel to the N direction) is a cutting groove as shown in FIG. 4) Form a second dicing line (5) (parallel to the M direction) that intersects with.... Thereafter, the lithium niobate single-crystal element (6) as shown in FIG. 3 is obtained by cutting into pieces. The angle θ1 of this element (6). θ2 is 50 degrees and 130 degrees, respectively.
上記のようにしてニオブ酸リチウム単結晶素子を製造し
た場合、素子(6)の各辺(7)、 (8)、 (9)
、叫と骨間・ 面がウエリ・表面と交わる方向とが平
行になるように形成しているので、ダイシング加工後、
割断する際に切断溝に発生した割れや欠けが骨間面に沿
りて伝播し個々の素子が分断するようなことが極めて少
なくなシ、割断工程における歩留シが著しく向上する。When a lithium niobate single crystal element is manufactured as described above, each side (7), (8), (9) of the element (6)
After dicing, it is formed so that the direction in which the ridge and inter-bone surface intersect with the well and surface are parallel to each other.
It is extremely unlikely that cracks or chips generated in the cutting groove during cutting will propagate along the interosseous surface and separate individual elements, and the yield in the cutting process will be significantly improved.
また、ダイシング加工において溝深さを従来よシも浅く
しても、容易に分割できることから、ダイシング加工を
行う0.lim以下の厚さの円形薄刃状のダイヤモンド
砥石の寿命を増大せしめる効果が得られた。In addition, even if the groove depth is made shallower than before during dicing, it can be easily divided. The effect of increasing the life of a circular thin-blade diamond grindstone having a thickness of less than the rim was obtained.
なお、他の実施例として、他の骨間面の組合せ、すなわ
ち、骨間面(0112)と骨間面(Tox2)との組合
わせ(第4図参照;隅角θg= 1301Jf、)、θ
4=50億))、骨間面(oxT2)、 41面(xo
1□)、 41面(noz)との組合せ(第5図参照;
隅角θ器=θa=so(i))の中から任意の組合せを
選択し、その骨間面とウェハ面との交線方向にダイシン
グ加工するようにしてもよい。この際、オリフラ面はそ
れぞれの骨間面の組合わせのいずれか一つの方位をX線
回折にょ)同定して、研削によシ作成する。In addition, as another example, a combination of other interosseous surfaces, that is, a combination of an interosseous surface (0112) and an interosseous surface (Tox2) (see FIG. 4; angle θg = 1301Jf,), θ
4=5 billion)), interosseous surface (oxT2), 41 surface (xo
1□), combination with 41 plane (noz) (see Figure 5;
An arbitrary combination may be selected from the angle θ angle=θa=so(i)), and dicing may be performed in the direction of the intersection of the interosseous surface and the wafer surface. At this time, the orientation flat surface is created by identifying the orientation of any one of the combinations of interosseous surfaces using X-ray diffraction (X-ray diffraction) and grinding.
本発明によれば、発生した割れや欠けが骨間面に沿って
伝播し、個々の素子が分断する虞がなくなるので、歩留
りが向上する。また、素子のダイシング加工による切断
方向が、骨間面がウェハ表面と交わる方向に一致してい
るので、溝深さを従来よシ浅くしても、その後の割断は
容易であシ、砥石寿命が増大する。According to the present invention, there is no possibility that generated cracks or chips will propagate along the interosseous surface and separate the individual elements, thereby improving the yield. In addition, since the cutting direction of the element during dicing matches the direction in which the interosseous surface intersects with the wafer surface, subsequent cleavage is easy even if the groove depth is shallower than before, and the grinding wheel has a long lifespan. increases.
第1図はニオブ酸リチウムの六方単位胞を示す図、第2
図は本発明の一実施例においてダイシング加工によシ所
定の方向の溝が形成されたウェハを示す図、第3図は本
発明の一実施例にょシ得られた素子を示す図、第4図、
第5図は本発明の他の実施例によシ得られた素子を示す
図である。
(2)・・・ウェハ、(6)・・・素子。
代理人 弁理士 則 近 憲 佑
(はか1名)Figure 1 shows the hexagonal unit cell of lithium niobate, Figure 2
The figures show a wafer in which grooves in a predetermined direction have been formed by dicing in one embodiment of the present invention, FIG. 3 shows a device obtained in one embodiment of the present invention, and FIG. figure,
FIG. 5 is a diagram showing a device obtained according to another embodiment of the present invention. (2)...Wafer, (6)...Element. Agent: Patent Attorney Noriyuki Chika (1 person)
Claims (1)
カットウェハを切出す工程と、上記ウエノ・の骨間面(
1012)、 (0112)、 (1102)と上記ウ
エノ)、の主面との交線方向に平行な方向に溝入れする
工程と、上記溝入れされたウェハを複数の素子に割断す
る工程とを具備することを特徴とするニオブ酸リチウム
単結晶素子の製造方法。Rotated 64 degrees from a lithium niobate single crystal ingot
The process of cutting out the cut wafer and the interosseous surface of the above-mentioned wafer (
1012), (0112), (1102) and the above-mentioned wafer), and a step of cutting the grooved wafer into a plurality of elements. A method for manufacturing a lithium niobate single crystal element, comprising:
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1373483A JPS59151514A (en) | 1983-02-01 | 1983-02-01 | Manufacture of lithium niobate single crystal element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1373483A JPS59151514A (en) | 1983-02-01 | 1983-02-01 | Manufacture of lithium niobate single crystal element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS59151514A true JPS59151514A (en) | 1984-08-30 |
Family
ID=11841474
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1373483A Pending JPS59151514A (en) | 1983-02-01 | 1983-02-01 | Manufacture of lithium niobate single crystal element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59151514A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002353762A (en) * | 2001-05-23 | 2002-12-06 | Hitachi Kokusai Electric Inc | Manufacturing method for surface acoustic wave element |
JP2009285570A (en) * | 2008-05-29 | 2009-12-10 | Nippon Yusen Kk | Strainer |
-
1983
- 1983-02-01 JP JP1373483A patent/JPS59151514A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002353762A (en) * | 2001-05-23 | 2002-12-06 | Hitachi Kokusai Electric Inc | Manufacturing method for surface acoustic wave element |
JP2009285570A (en) * | 2008-05-29 | 2009-12-10 | Nippon Yusen Kk | Strainer |
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