JPS59149638A - Manufacture of shadow mask - Google Patents
Manufacture of shadow maskInfo
- Publication number
- JPS59149638A JPS59149638A JP58019085A JP1908583A JPS59149638A JP S59149638 A JPS59149638 A JP S59149638A JP 58019085 A JP58019085 A JP 58019085A JP 1908583 A JP1908583 A JP 1908583A JP S59149638 A JPS59149638 A JP S59149638A
- Authority
- JP
- Japan
- Prior art keywords
- shadow mask
- rolling
- manufacturing
- electron beam
- rolled
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/14—Manufacture of electrodes or electrode systems of non-emitting electrodes
- H01J9/142—Manufacture of electrodes or electrode systems of non-emitting electrodes of shadow-masks for colour television tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/14—Manufacture of electrodes or electrode systems of non-emitting electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2229/00—Details of cathode ray tubes or electron beam tubes
- H01J2229/07—Shadow masks
- H01J2229/0727—Aperture plate
- H01J2229/0733—Aperture plate characterised by the material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2229/00—Details of cathode ray tubes or electron beam tubes
- H01J2229/07—Shadow masks
- H01J2229/0727—Aperture plate
- H01J2229/0777—Coatings
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Heat Treatment Of Sheet Steel (AREA)
- ing And Chemical Polishing (AREA)
- Electrodes For Cathode-Ray Tubes (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明はカラーテレビ用受像管のンヤドウマスクの製造
方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a method for manufacturing a mask for a color television picture tube.
従来より、カラーテレビ用受像管としてンヤドウマスク
を用いたいわゆるシャドウマスク管が良く知られている
。BACKGROUND ART A so-called shadow mask tube using a Nyado mask has been well known as a color television picture tube.
第1図はデルタ型電子銃を用いたシャドウマスク管の基
本構造を示す斜視図である。FIG. 1 is a perspective view showing the basic structure of a shadow mask tube using a delta type electron gun.
即ち、第1図に示すようにシャドウマスク管は3本の電
子銃1a〜ICと三色螢光面2の間に多数の電子ビーム
通過孔、9a、、9h、・・・を有したシャドウマスク
3を設けて構成される。このンヤドウマスク3は、3本
の電子銃1a〜ICから特定の電子ビーム通過孔1例え
ば3Cを狙って発射された電子ビームを整形して三色螢
光面2の各色螢光部2鳳〜2Cにそれぞれ正確なビーム
スポットを投影する働きを有している。That is, as shown in FIG. 1, the shadow mask tube has a large number of electron beam passing holes 9a, 9h, . . . between the three electron guns 1a to IC and the three-color fluorescent surface 2. It is configured by providing a mask 3. This Nyadou mask 3 shapes the electron beams emitted from three electron guns 1a to IC, aiming at specific electron beam passing holes 1, for example, 3C, and forms the respective color fluorescent parts 2 to 2C of the three-color fluorescent surface 2. Each has the function of projecting an accurate beam spot.
尚、上記電子ビーム通過孔3a、Jb、・・・は一般に
、第2図の拡大断面図に示されるように。The electron beam passing holes 3a, Jb, . . . are generally as shown in the enlarged cross-sectional view of FIG.
螢光面に対向する面4(以後「マスク面」と呼ぶン側を
半円球状にえぐった形状に加工され。The surface 4 (hereinafter referred to as the "mask surface") facing the fluorescent surface is hollowed out into a semicircular shape.
散乱電子の発生を防止する工夫がなされている。Efforts have been made to prevent the generation of scattered electrons.
そして、このシャドウマスク31″−おける電子ビーム
通過孔3m、3b、・・・の相対位置、孔径および孔形
状の精度は十分高く設定されている。The relative positions, diameters, and shapes of the electron beam passage holes 3m, 3b, . . . in the shadow mask 31'' are set to have sufficiently high accuracy.
ちなみに上記電子ビーム通過孔3m、Ib・・・の加工
精度が低い場合には、ドーミング現象と呼ばれる色のに
じみ、色ムラ等1画質劣化を生ずる要因となる。Incidentally, if the machining accuracy of the electron beam passage holes 3m, Ib, etc. is low, it becomes a factor that causes image quality deterioration such as color bleeding and color unevenness called doming phenomenon.
一方、近年、テレビ画面の「きめの細かさ」に対する一
般的要求が高まり、送信方式も走査線本数を現方式の約
2倍とする高品位テレビ方式と呼ばれるものに移行しつ
つある。そこで、これに対応するべく受像管においても
更に性能を向上し、明析できめの細かい画像を再現し得
るものの開発が強く望まれている。そして、このような
要求に伴い、ンヤドウマスクの電子ビーム通過孔を高密
度で微細に形成することが必要となってきている。On the other hand, in recent years, general demand for "fine detail" on television screens has increased, and the transmission system is also shifting to a so-called high-definition television system that uses approximately twice the number of scanning lines as the current system. Therefore, in order to cope with this, there is a strong demand for the development of a picture tube that can further improve the performance and reproduce fine-grained images with clarity. In response to such demands, it has become necessary to form electron beam passing holes in a mask with high density and fineness.
しかしながら、一般にシ・Vドウマスクの製造において
用いられる従来のフォトエツチング法では、微細で精度
の高い電子ビーム通過孔を形成することが非常に困難で
あった。即ち、従来技術を用いて微細で精度の高い電子
ビーム通過孔を形成しようとしても、これによって得ら
れた電子ビーム通過孔は、例えば第3図1に示すように
マスク面4から見た電子ビーム通過孔、9g、3b、・
・・の孔位置、形状とも不均一で精度の低いものとなっ
た。However, with the conventional photoetching method generally used in the manufacture of shadow masks, it is extremely difficult to form fine and highly accurate electron beam passage holes. That is, even if an attempt is made to form a fine and highly accurate electron beam passing hole using the conventional technique, the electron beam passing hole obtained by this method will not be able to form the electron beam passing hole as seen from the mask surface 4, as shown in FIG. 3, for example. Passing hole, 9g, 3b,・
The hole position and shape of ... were non-uniform and the accuracy was low.
また、このような問題とは別に電子ビーム通過孔の高密
度、微細化を図るにつれ、電子銃から発射された電子ビ
ームがシャドウマスクに衝突する比率が高まり、シャド
ウマスクの温度上昇に起因したVヤドクマスクの熱膨張
によって、電子ビーム通過孔と螢光体との相対位置関係
が変化し、この結果ドーミング現象を生じるという問題
も新たに生じた。In addition to this problem, as the density and miniaturization of the electron beam passage hole increases, the ratio of the electron beam emitted from the electron gun colliding with the shadow mask increases, resulting in the increase in the temperature of the shadow mask. A new problem has arisen in that the thermal expansion of the Yadoku mask changes the relative positional relationship between the electron beam passage hole and the phosphor, resulting in a doming phenomenon.
本発明は、かかる問題点に対処すべくなされたものであ
り、その目的とするところは、微細な電子ビーム通過孔
を高精度で且つ高密度に形成することができるンヤドウ
マスクの製造方法を提供することにある。The present invention has been made to address such problems, and its purpose is to provide a method for manufacturing a mask that can form fine electron beam passage holes with high precision and high density. There is a particular thing.
本発明は、前述した電子ビーム通過孔の孔形状の不均一
は、従来のシャドウマスク原板のマスク面ニおける結晶
方向が不揃いであることに起因する事実に着目し、これ
に基づいてなされたものである。The present invention has been made based on the fact that the non-uniformity of the shape of the electron beam passing holes described above is caused by the uneven crystal orientation on the mask surface of the conventional shadow mask original plate. It is.
即ち、第3図(aJに示す如く、シャドウマスク原板の
マスク面4およびこれに対向する面ご結晶粒の方向が不
揃いであると、この原板(=エツチングを施した際、エ
ツチングされ易い結晶粒とエツチングされにくい結晶粒
との間でエツチング速度に差が生じる。この結果エツチ
ング進行方向6が傾く等のバラツキが生じて同図(bJ
に示す如く、電子ビーム通過孔3a、Jb、・・・の孔
位置、形状とも不均一なものとなる。In other words, as shown in FIG. 3 (aJ), if the directions of the crystal grains on the mask surface 4 of the shadow mask original plate and the face opposite thereto are uneven, this original plate (=crystal grains that are easily etched when etching is performed) There is a difference in etching speed between the crystal grains and the crystal grains that are difficult to be etched.As a result, the etching progress direction 6 is tilted and other variations occur, as shown in the same figure (bJ
As shown in the figure, the positions and shapes of the electron beam passing holes 3a, Jb, . . . are non-uniform.
本発明者等は、マスク面に、tioo>結晶面を35%
以上(より好ましくは40%以上)集合させたシャドウ
マスク原板を用いれば、そのエツチング精度が大きく向
上することを見い出した。The present inventors set the tioo>crystal plane at 35% on the mask surface.
It has been found that if a shadow mask original plate having a concentration of at least 40% or more is used, the etching accuracy can be greatly improved.
ここで、上記マスク面に(100)結晶面の集合してい
る度合いとは1次の如く定義される。Here, the degree to which (100) crystal planes are gathered on the mask surface is defined as first order.
即ち、多結晶の個々の粒の(100>方向の、マスク面
に垂直な軸方向への成分を、全ての結晶粒について集計
した割合であり1次の式で表される。That is, it is the ratio of the component in the (100> direction of each polycrystalline grain in the axial direction perpendicular to the mask surface for all crystal grains, and is expressed by the linear equation.
ここで■φは粒の体積比、φはマスク面に垂直な方向と
各結晶粒の<i o o>方向とのなす角である。Here, ■φ is the volume ratio of the grains, and φ is the angle between the direction perpendicular to the mask surface and the <i o o> direction of each crystal grain.
そこで、本発明は、インバ型合金等の面心立方格子構造
又は体心立方格子構造の合金からなるシャドウマスク材
を冷間にて強加工圧延して圧延面に(110)結晶面を
集合させたのち、この強加工圧延されたシャドウマスク
材を前記合金の再結晶温度以上で熱処理し、圧延面に(
100)結晶面を集合させてシャドウマスク原板を得、
このシャドウマスク原板の上記(100)結晶面をエツ
チングして上記シャドウマスク原板に電子ビーム通過孔
を形成するようにしたことを特徴としている。Therefore, in the present invention, a shadow mask material made of an alloy with a face-centered cubic lattice structure or a body-centered cubic lattice structure, such as an Invar alloy, is subjected to strong cold rolling to collect (110) crystal planes on the rolled surface. Afterwards, this hard-rolled shadow mask material is heat-treated at a temperature higher than the recrystallization temperature of the alloy to form (
100) Gather crystal planes to obtain a shadow mask original plate,
A feature of the present invention is that electron beam passing holes are formed in the shadow mask original plate by etching the (100) crystal plane of the shadow mask original plate.
また1本発明は強加工圧延したのちシャドウマスク材を
前記合金の再結晶温度以上で熱処理して圧延面に(io
o)結晶面を集合させたシャドウマスク材を、更に必要
に応じて結晶面が回転しない範囲である圧延率25%以
下の条件で冷間圧延して板厚の精度を高めたシャドウマ
スク原板を得、このシャドウマスク原板をエツチング加
工するようにしたものである。In addition, one aspect of the present invention is to heat-treat the shadow mask material at a temperature higher than the recrystallization temperature of the alloy after hard rolling to form a rolled surface (io
o) A shadow mask material with aggregated crystal planes is further cold-rolled at a rolling rate of 25% or less, which is a range in which the crystal planes do not rotate, as necessary, to improve the accuracy of the plate thickness. In addition, this shadow mask original plate is subjected to an etching process.
かくして本発明によれば、圧延面に(100)結晶面を
集合させたシャドウマスク原板を得、上記(100)結
晶面をエツチングして電子ビーム通過孔を形成するので
エツチング速度に差が生じることはなく、微細な電子ビ
ーム通過孔を高精度で且つ高密度に形成することが可能
となる。このため、きめの細かい画面の得られるシャド
ウマスク管のシャドウマスクが製造できる。Thus, according to the present invention, a shadow mask original plate having (100) crystal planes gathered on the rolled surface is obtained, and the electron beam passing holes are formed by etching the (100) crystal planes, so that a difference in etching speed occurs. Therefore, it becomes possible to form fine electron beam passing holes with high precision and high density. Therefore, it is possible to manufacture a shadow mask using a shadow mask tube that provides a fine-grained screen.
またシャドウマスク材として熱膨張係数が非常に少ない
インパ型合金等の面心立方格子構造ないし体心立方格子
構造の合金を用いるのでシャドウマスクの温度上昇によ
る熱膨張に起因したドーミング現象の発生も防止できる
。従って、本発明により製造されたシャドウマスクを用
いることにより高品位テレビ方式に対する要求を・満た
したVヤドゥマスク管を得ることが可能となる。しかも
本発明方法を実施することは容易であり、その実用的利
点が絶大である等の効果が奏せられる。In addition, since we use an alloy with a face-centered cubic lattice structure or a body-centered cubic lattice structure, such as an imper-type alloy with a very low coefficient of thermal expansion, as the shadow mask material, the occurrence of doming phenomena caused by thermal expansion due to temperature rise of the shadow mask is also prevented. can. Therefore, by using the shadow mask manufactured according to the present invention, it is possible to obtain a V-yadu mask tube that meets the requirements for high-definition television systems. Moreover, the method of the present invention is easy to implement and has great practical advantages.
以下に本発明の一実施例について説明を行づ。 An embodiment of the present invention will be described below.
本発明で用いるシャドウマスク材としては、前述の通り
結晶面を揃える必要から面心立方格子構造または体心立
方格子構造の合金であることが好ましい。しかも熱膨張
係数が殆んど零に近いものであれば熱的問題を解決でき
ることから、インパ合金(36N i −F e )
、超不変鋼(32N1−5Co−63Fe )、ステン
レス不変m’fl (54Co −9,3Cr、−36
,5Fe)、43Pd 57Fe合金等のインパ型合
金を用いるのが良い。The shadow mask material used in the present invention is preferably an alloy with a face-centered cubic lattice structure or a body-centered cubic lattice structure because of the need to align crystal planes as described above. Moreover, thermal problems can be solved if the coefficient of thermal expansion is almost zero, so Impa alloy (36N i -F e )
, super constant steel (32N1-5Co-63Fe), stainless steel constant m'fl (54Co -9,3Cr, -36
, 5Fe), 43Pd 57Fe alloy, etc. are preferably used.
本実施例では36N]−Feなる成分のインノ寸合金を
溶解し、その鋳塊を連続熱間製線工程により、直径6賭
の線材とし、この線材を長手方向に直角に鍛造し、厚さ
2朋、巾50關の断面を有する板をンヤドウマスク材と
して使用する。In this example, an ingot alloy of 36N]-Fe is melted, the ingot is made into a wire rod with a diameter of 6 through a continuous hot wire making process, and this wire rod is forged at right angles to the longitudinal direction, and the thickness A plate having a cross section of 2 mm and a width of 50 mm is used as a mask material.
このシャドウマスク材を900℃の主なる肉厚減少工程
である熱間圧延により、大まかな圧延ン施こし、厚さ1
m、中100mの断面を有する板を得る。尚、上記90
0℃は上記インパ合金の再結晶温度以上の温度であるた
め、これによってその圧延面に(100)結晶面を集合
させることができるが、これは本発明において特(=大
きな意味を持つものではない。This shadow mask material was roughly rolled through hot rolling at 900°C, which is the main thickness reduction process, until the thickness was 1.
A plate with a cross section of 100 m in diameter is obtained. In addition, the above 90
Since 0°C is a temperature higher than the recrystallization temperature of the above-mentioned Impa alloy, it is possible to gather (100) crystal planes on the rolled surface, but this is not particularly significant in the present invention. do not have.
次にこの熱間圧延によって得た板を、圧延率80%以上
、例えば90%の強加工(=よって、厚さ0.1 m
、巾1000顛の板となるべく1回乃至複数回冷間圧延
を行う。この強加工によって結晶面は回転し、圧延面に
は(110)結晶面が超える920℃の熱処理を1時間
施こすことにより、結晶軸は回転し、圧延面には再び(
100)面が集合する。この集合する度合いは、前述の
如く35%以上、より好ましくは40%以上であること
が望ましい。Next, the plate obtained by this hot rolling is strongly worked at a rolling rate of 80% or more, for example 90% (=thus, the thickness is 0.1 m
, cold rolling is performed once or multiple times to obtain a plate with a width of 1000 mm. This strong working rotates the crystal plane, and by applying heat treatment for 1 hour at 920°C, which exceeds the (110) crystal plane, the crystal axis rotates, and the (110) crystal plane rotates again.
100) Surfaces gather. As mentioned above, the degree of aggregation is desirably 35% or more, more preferably 40% or more.
ちなみに、本発明者等の実験により、上記各工程終了後
の圧延面の表面状態をX線回折にて調べたところ、主な
る肉厚減少工程である熱間圧延により(100)結晶面
が40%、その後の冷間による強加工圧延で(110)
結晶面が38%、更に再結晶温度を超える920℃の熱
処理で安定した(100)結晶面が42%集合していた
。Incidentally, in experiments conducted by the present inventors, the surface condition of the rolled surface after each of the above steps was examined by X-ray diffraction, and it was found that the (100) crystal plane was %, with subsequent cold hard rolling (110)
The number of crystal faces was 38%, and 42% of the (100) crystal faces, which were stabilized by heat treatment at 920° C. exceeding the recrystallization temperature, were aggregated.
このようにして得たシャドウマスク原板を。The shadow mask original plate obtained in this way.
例えば塩化第2鉄43%、塩化第1鉄6%、塩酸0.1
%の水溶液からなるエツチング液を用い、65℃の温度
で第4図(aJに示すマスク面4およびそれに対向する
面5に順次フォトエツチングを施し、電子ビーム通過孔
を形成する。この時、電子ビーム通過孔のピッチを約0
.3 mとし、14型テレビ用シヤドウマスクとして約
52万個の電子ビーム通過孔を形成し、これをマスク面
4方向から見た図を第4図(bJに示す。For example, ferric chloride 43%, ferrous chloride 6%, hydrochloric acid 0.1
Using an etching solution consisting of an aqueous solution of The pitch of the beam passing holes is approximately 0.
.. 3 m, and approximately 520,000 electron beam passing holes were formed as a shadow mask for a 14-inch television, and a view of this as seen from four directions on the mask surface is shown in FIG. 4 (bJ).
一方、比較対照を行うため、前記、強加工による冷間圧
延を行った後、再結晶温度以下である500℃の歪取り
熱処理を行い、マスク面に殆んど(1001面の集合し
ていないシャドウマスク材を用いてフォトエツチングを
施した場合の電子ビーム通過孔の形状は第3図(blと
同様のものとなった。On the other hand, in order to compare and contrast, after cold rolling by strong working described above, strain relief heat treatment was performed at 500°C, which is below the recrystallization temperature. When photoetching was performed using a shadow mask material, the shape of the electron beam passage hole was similar to that shown in FIG. 3 (bl).
以上の結果から明らかなように、本実施例によれば、よ
り微細な′電子ビーム通過孔が高精度で且つ高密度に形
成できるが、これは第4図(alに示す如く、エツチン
グ進行方向がマスク面4に対して、はぼ垂直方向となっ
ていることによる。As is clear from the above results, according to this example, finer 'electron beam passing holes can be formed with high precision and high density; This is because the direction is approximately perpendicular to the mask surface 4.
このように、マスク面において(100)結晶面を集合
させることによって、高密度かつ微細な電子ビーム通過
孔を有するシャドウマスクを得ることができるが、さら
にシャドウマスクの厚さ方向の精度を高める必要がある
場合には、強加工による冷間圧延を行なった後、再結晶
温度以上で熱処理を施しンさらに圧延率25%を超えな
い冷間圧延を必要な回数たけ行ならたシャドウマスク原
板を用いれば良い。即ち、圧延率25%以下であれば圧
延面における(100)結晶面の回転を抑えることが可
能であるからである。In this way, by gathering the (100) crystal planes on the mask surface, it is possible to obtain a shadow mask with high density and fine electron beam passing holes, but it is necessary to further improve the accuracy in the thickness direction of the shadow mask. If there is a problem, use a shadow mask original plate that has been cold rolled by strong working, then heat treated at a temperature higher than the recrystallization temperature, and then cold rolled the necessary number of times at a rolling reduction not exceeding 25%. Good. That is, if the rolling ratio is 25% or less, it is possible to suppress the rotation of the (100) crystal plane on the rolling surface.
以上の方法によれば、従来のシャドウマスクに比ベピッ
チ巾を約%、電子ビーム通過孔の数を5倍程度まで増加
させる事が可能であるとともに、シャドウマスク材に熱
膨張率の非常に小さいインバ合金を使用するマで、シャ
ドウマスクの熱膨張によるドーミング現象も防止でき、
高品位テレビの目的に合致したシャドウマスクが得られ
る。According to the above method, it is possible to increase the pitch width by about % and the number of electron beam passing holes by about 5 times compared to conventional shadow masks, and also to make the shadow mask material have a very low coefficient of thermal expansion. By using Invar alloy, it is possible to prevent the doming phenomenon caused by thermal expansion of the shadow mask.
A shadow mask that meets the purpose of high-definition television can be obtained.
なお1本実施例では特に丸形電子ビーム通過孔を有する
シャドウマスクの製造方法について説明を行なったが、
特(=これに限定されるものではなく、例えばスリット
型又はストライプ型のシャドウマスクの製造方法にも適
用可能である。Note that in this embodiment, a method for manufacturing a shadow mask having a round electron beam passage hole was particularly explained.
In particular, the present invention is not limited to this, and can also be applied to, for example, a method for manufacturing a slit-type or stripe-type shadow mask.
第1図はデルタ型電子銃を用いたシャドウマスク管の概
略構成を示す斜視図、第2図は第1図のシャドウマスク
の電子ビーム通過孔の断面図、第3図(1)(b)は従
来のシャドウマスク原板製造方法(二より形成されたシ
ャドウマスクを説明するための図で、同図(alは同シ
ャドウマスク断面におけるエツチング状況を示す断面図
、同図(blは同シャドウマスク表面をマスク面から見
た正面図、第4図は本発明の一実施例による製造方法に
て形成されたシャドウマスクを説明するための図であり
、同図(Jl)は同シャドクマスクの断面におけるエツ
チング状況を示す断面図、同図(blは同シャドウマス
ク表面をマスク面から見色螢光面、4・・・マスク面
C、C/・・・電子ビーム。
出願人代理人 弁理士 鈴 江 武 彦矛1図
a
矛2図
嘔
(b)
第1頁の続き
0発 明 者 伊藤昌行
川崎市幸区小向東芝町1番地東
京芝浦電気株式会社総合研究所Fig. 1 is a perspective view showing a schematic configuration of a shadow mask tube using a delta type electron gun, Fig. 2 is a sectional view of the electron beam passage hole of the shadow mask shown in Fig. 1, and Fig. 3 (1) (b). 1 is a diagram for explaining a shadow mask formed by a conventional shadow mask original manufacturing method (2). FIG. 4 is a diagram for explaining a shadow mask formed by a manufacturing method according to an embodiment of the present invention, and FIG. 4 (Jl) shows a cross-sectional view of the shadow mask. Cross-sectional view showing the etching situation, the same figure (bl is the colored fluorescent surface of the same shadow mask surface viewed from the mask surface, 4... mask surface
C, C/...electron beam. Applicant's representative Patent attorney Takehiko Suzue Picture 1 a Picture 2 (b) Continued from page 1 0 Author: Masayuki Ito Tokyo Shibaura Electric Co., Ltd. Research Institute, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki City
Claims (1)
からなるシャドウマスク材を冷間にて温度で熱処理を施
こし圧延面にBoo)結晶面を集合させたシャドウマス
ク原板を得る工程と、このシャドウマスク原材の上記(
100)結晶面をエツチングして上記シャドウマスク原
板に電子ビーム通過孔を形成する工程とを具備したこと
を特徴とするシャドウマスクの製造方法。 (2) シャドウマスク材はインノ々型合金であるこ
とt特徴とする特許請求の範囲第(1)項記載のシャド
ウマスクの製造方法。 (3) 冷間による強加工圧延は80%以上の圧延率
で行われて、その圧延面に(100)結晶面を集合させ
るものであることを特徴とする特許請求の範囲第(1)
項記載のシャドウマスクの製造方法。 (4) ンヤドクマスク材はシャドウマスク素材を鍛
造したのち熱間圧延して得られた板体からなるものであ
ることを特徴とする特許請求の範囲第(1)項記載のシ
ャドウマスクの製造方法。 加工圧延する工程と、この強加工圧延されたシャドウマ
スク材を前記合金の再結晶温度以上の温度で熱処理を施
こし圧延面に(100)結晶面を集合させたシャドウマ
スク材を得る工程と、この(100)結晶面を集合させ
たシャドウマスク材を圧延率25%以下で冷間圧延しシ
ャドウマスク原材を得る工程と、このンヤドウマスク原
材の上記(100)結晶面をエツチングして上記シャド
ウマスク原板(−電子ビーム通過孔を形成する工程とを
具備したことを特徴とするシャドウマスクの製造方法。 (6)Vヤドクマスク材はインパ型合金であることを特
徴とする特許請求の範囲第(5)項記載のシャドウマス
クの製造方法。 (7)冷間による強加工圧延は80%以上の圧延率で行
われて、その圧延面に(ioo)結晶面を集合させるも
のであることを特徴とする特許請求の範囲第(5)項記
載のシャドウマスクの製造方法。 (8) シャドウマスク材はシャドウマスク素材を鍛
造したのち熱間圧延して得られた板体かうなるものであ
ることを特徴とする特許請求の範囲第(5)項記載のシ
ャドウマスクの製造方法・[Claims] (1) A shadow mask material made of an alloy with a face-centered cubic lattice structure or a body-centered cubic lattice structure is heat-treated at a cold temperature to form a shadow in which crystal planes are gathered on the rolled surface. The process of obtaining a mask original plate and the above (
100) A method for manufacturing a shadow mask, comprising the step of etching a crystal plane to form an electron beam passage hole in the shadow mask original plate. (2) The method for manufacturing a shadow mask as set forth in claim (1), wherein the shadow mask material is an in-ground alloy. (3) Claim (1) characterized in that the cold hard working rolling is performed at a rolling ratio of 80% or more, and (100) crystal planes are gathered on the rolling surface.
1. Method for manufacturing a shadow mask as described in Section 1. (4) The method for manufacturing a shadow mask according to claim (1), wherein the mask material is a plate obtained by forging a shadow mask material and then hot rolling it. a step of work-rolling, and a step of heat-treating the strongly work-rolled shadow mask material at a temperature higher than the recrystallization temperature of the alloy to obtain a shadow mask material in which (100) crystal planes are gathered on the rolled surface; The shadow mask material in which the (100) crystal planes are assembled is cold-rolled at a rolling rate of 25% or less to obtain a shadow mask raw material, and the (100) crystal planes of this nyadou mask raw material are etched to form the shadow mask material. A method for manufacturing a shadow mask, characterized in that it comprises a mask original plate (- a step of forming an electron beam passage hole). The method for producing a shadow mask according to item 5). (7) The strong cold rolling is performed at a rolling rate of 80% or more, and (ioo) crystal planes are aggregated on the rolled surface. A method for manufacturing a shadow mask according to claim (5). (8) The shadow mask material is a plate obtained by forging and hot rolling a shadow mask material. A method for manufacturing a shadow mask as described in claim (5) characterized by:
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58019085A JPS6046510B2 (en) | 1983-02-08 | 1983-02-08 | How to make a shadow mask |
CA000435352A CA1204143A (en) | 1982-08-27 | 1983-08-25 | Textured shadow mask |
EP83108417A EP0104453B1 (en) | 1982-08-27 | 1983-08-26 | Shadow mask, color picture tube and color television |
US06/526,824 US4528246A (en) | 1982-08-27 | 1983-08-26 | Shadow mask |
DE8383108417T DE3378442D1 (en) | 1982-08-27 | 1983-08-26 | Shadow mask, color picture tube and color television |
KR1019830005091A KR880000102B1 (en) | 1983-02-08 | 1983-10-27 | The method of manufacturing of a shadow mask |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58019085A JPS6046510B2 (en) | 1983-02-08 | 1983-02-08 | How to make a shadow mask |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7384785A Division JPS60234921A (en) | 1985-04-08 | 1985-04-08 | Production of master plate for shadow mask |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59149638A true JPS59149638A (en) | 1984-08-27 |
JPS6046510B2 JPS6046510B2 (en) | 1985-10-16 |
Family
ID=11989608
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58019085A Expired JPS6046510B2 (en) | 1982-08-27 | 1983-02-08 | How to make a shadow mask |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPS6046510B2 (en) |
KR (1) | KR880000102B1 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60234921A (en) * | 1985-04-08 | 1985-11-21 | Toshiba Corp | Production of master plate for shadow mask |
JPS6173356A (en) * | 1984-09-18 | 1986-04-15 | Hitachi Metals Ltd | Lead frame member |
JPS62284046A (en) * | 1986-06-02 | 1987-12-09 | Nippon Kokan Kk <Nkk> | Manufacture of fe-ni alloy sheet |
DE4404269C2 (en) * | 1993-03-12 | 1999-07-01 | Toshiba Kawasaki Kk | Shadow mask plate material and shadow mask made from it |
-
1983
- 1983-02-08 JP JP58019085A patent/JPS6046510B2/en not_active Expired
- 1983-10-27 KR KR1019830005091A patent/KR880000102B1/en not_active IP Right Cessation
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6173356A (en) * | 1984-09-18 | 1986-04-15 | Hitachi Metals Ltd | Lead frame member |
JPH0221141B2 (en) * | 1984-09-18 | 1990-05-11 | Hitachi Metals Ltd | |
JPS60234921A (en) * | 1985-04-08 | 1985-11-21 | Toshiba Corp | Production of master plate for shadow mask |
JPH029654B2 (en) * | 1985-04-08 | 1990-03-02 | Tokyo Shibaura Electric Co | |
JPS62284046A (en) * | 1986-06-02 | 1987-12-09 | Nippon Kokan Kk <Nkk> | Manufacture of fe-ni alloy sheet |
JPH0570686B2 (en) * | 1986-06-02 | 1993-10-05 | Nippon Kokan Kk | |
DE4404269C2 (en) * | 1993-03-12 | 1999-07-01 | Toshiba Kawasaki Kk | Shadow mask plate material and shadow mask made from it |
Also Published As
Publication number | Publication date |
---|---|
KR850003470A (en) | 1985-06-17 |
JPS6046510B2 (en) | 1985-10-16 |
KR880000102B1 (en) | 1988-02-23 |
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