JPS59149317A - 投影型露光装置のアライメント光学系 - Google Patents
投影型露光装置のアライメント光学系Info
- Publication number
- JPS59149317A JPS59149317A JP58024202A JP2420283A JPS59149317A JP S59149317 A JPS59149317 A JP S59149317A JP 58024202 A JP58024202 A JP 58024202A JP 2420283 A JP2420283 A JP 2420283A JP S59149317 A JPS59149317 A JP S59149317A
- Authority
- JP
- Japan
- Prior art keywords
- reticle
- rectangular aperture
- light source
- positive lens
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Microscoopes, Condenser (AREA)
- Lenses (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58024202A JPS59149317A (ja) | 1983-02-16 | 1983-02-16 | 投影型露光装置のアライメント光学系 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58024202A JPS59149317A (ja) | 1983-02-16 | 1983-02-16 | 投影型露光装置のアライメント光学系 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59149317A true JPS59149317A (ja) | 1984-08-27 |
JPH0415924B2 JPH0415924B2 (enrdf_load_stackoverflow) | 1992-03-19 |
Family
ID=12131728
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58024202A Granted JPS59149317A (ja) | 1983-02-16 | 1983-02-16 | 投影型露光装置のアライメント光学系 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59149317A (enrdf_load_stackoverflow) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5367404A (en) * | 1991-08-02 | 1994-11-22 | Canon Kabushiki Kaisha | Image projection method and semiconductor device manufacturing method using the same |
EP0614097B1 (en) * | 1991-08-02 | 1999-12-15 | Canon Kabushiki Kaisha | Image projection method and semiconductor device manufacturing method using the same |
-
1983
- 1983-02-16 JP JP58024202A patent/JPS59149317A/ja active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5367404A (en) * | 1991-08-02 | 1994-11-22 | Canon Kabushiki Kaisha | Image projection method and semiconductor device manufacturing method using the same |
EP0614097B1 (en) * | 1991-08-02 | 1999-12-15 | Canon Kabushiki Kaisha | Image projection method and semiconductor device manufacturing method using the same |
Also Published As
Publication number | Publication date |
---|---|
JPH0415924B2 (enrdf_load_stackoverflow) | 1992-03-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7236254B2 (en) | Exposure apparatus with interferometer | |
JP3341269B2 (ja) | 投影露光装置、露光方法、半導体の製造方法及び投影光学系の調整方法 | |
US4402596A (en) | Projection type exposure device | |
US4592625A (en) | Double-conjugate maintaining optical system | |
US4473293A (en) | Step-and-repeat projection alignment and exposure system | |
US4573791A (en) | Step-and-repeat projection alignment and exposure system | |
US5552892A (en) | Illumination optical system, alignment apparatus, and projection exposure apparatus using the same | |
JP2005233979A (ja) | 反射屈折光学系 | |
JP3123548B2 (ja) | 露光方法及び露光装置 | |
US6797443B2 (en) | Focus monitoring method, focus monitoring apparatus, and method of manufacturing semiconductor device | |
EP0017759A2 (en) | Improved step-and-repeat projection alignment and exposure system | |
US4498762A (en) | Projection type exposure apparatus | |
US20020024005A1 (en) | Interference system and semiconductor exposure apparatus having the same | |
JPH08179202A (ja) | 紫外線結像光学システム | |
JP2004128307A (ja) | 露光装置及びその調整方法 | |
JPH1020197A (ja) | 反射屈折光学系及びその調整方法 | |
JPS59149317A (ja) | 投影型露光装置のアライメント光学系 | |
JP2002169083A (ja) | 対物光学系、収差測定装置、投影露光装置、対物光学系の製造方法、収差測定装置の製造方法、投影露光装置の製造方法及びマイクロデバイスの製造方法 | |
US20040223163A1 (en) | Aberration measuring method | |
JP3019505B2 (ja) | 露光装置及びそれを用いた半導体チップの製造方法 | |
JP3611054B2 (ja) | 位置補正光学系、位置合わせ装置、並びに露光方法及び装置 | |
JP2008172004A (ja) | 収差評価方法、調整方法、露光装置、露光方法、およびデバイス製造方法 | |
JPH113853A (ja) | 位置検出方法及び位置検出装置 | |
JPS5838765B2 (ja) | 多重焦点顕微鏡 | |
JP3358192B2 (ja) | 投影露光装置、露光方法、半導体の製造方法及び投影光学系の調整方法 |