JPS59146063A - Organic film - Google Patents

Organic film

Info

Publication number
JPS59146063A
JPS59146063A JP58020786A JP2078683A JPS59146063A JP S59146063 A JPS59146063 A JP S59146063A JP 58020786 A JP58020786 A JP 58020786A JP 2078683 A JP2078683 A JP 2078683A JP S59146063 A JPS59146063 A JP S59146063A
Authority
JP
Japan
Prior art keywords
layer
film
group
compound
atom
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58020786A
Other languages
Japanese (ja)
Other versions
JPH0211137B2 (en
Inventor
Kazuharu Katagiri
片桐 一春
Yoshihiro Oguchi
小口 芳弘
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP58020786A priority Critical patent/JPS59146063A/en
Priority to US06/577,208 priority patent/US4555472A/en
Publication of JPS59146063A publication Critical patent/JPS59146063A/en
Publication of JPH0211137B2 publication Critical patent/JPH0211137B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/244Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising organic materials only
    • G11B7/246Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising organic materials only containing dyes
    • G11B7/247Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising organic materials only containing dyes methine or polymethine dyes
    • G11B7/2472Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising organic materials only containing dyes methine or polymethine dyes cyanine
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03GELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02Charge-receiving layers
    • G03G5/04Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/06Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being organic
    • G03G5/0664Dyes
    • G03G5/0666Dyes containing a methine or polymethine group
    • G03G5/0672Dyes containing a methine or polymethine group containing two or more methine or polymethine groups
    • G03G5/0674Dyes containing a methine or polymethine group containing two or more methine or polymethine groups containing hetero rings

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Thermal Transfer Or Thermal Recording In General (AREA)
  • Optical Filters (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Paints Or Removers (AREA)
  • Optical Record Carriers And Manufacture Thereof (AREA)
  • Photoreceptors In Electrophotography (AREA)

Abstract

PURPOSE:To obtain an org. film which has an absorption band on a long wavelength side, is stable to heat, and is useful as a recording film of an optical disk by using a specific cyanine compd. CONSTITUTION:The cyanine compd. (e.g.; the formula II) expressed by formula I [Z1 is an atom group required for forming a nitrogenous heterocycle; Z2 is an atom group for forming (thia)pyrane, selenapyrane, benzo(thia)pyrane, naphtoselenapyrane, etc.; X is S, O, Se; Z3 is a bivalent hydrocarbon group necessary for forming 5-, 6-membered rings; R1 is H, alkyl; R2, R3 and H, halogen, a residual univalent org. group; R4 is H, halogen; A<-> is anion; m, n are 0, 1; l is 1, 2] is used. More specifically, an org. film of about <=10mu film thickness is formed by vacuum deposition of the above-mentioned cyanine compd. (may be coated together with a binder) on a substrate, by which the optical disc adapted to writing by using a semiconductor laser having about >=750nm wavelength is formed.

Description

【発明の詳細な説明】[Detailed description of the invention]

本発明は、レーザ特に長波長側に発振波長を有する半導
体レーザを効果的に吸収し、別のエイ・ルギーに変換し
7うる有機被膜に関し7、旧しくに半導体レーザを光源
とした電子写真方式プリンターの電子写真用感光被ハぐ
、半導体レーザによる杏込みと再生が可能な光ティスフ
川波IIぐあるいは赤外線カットフィルターなどに適用
できる新規な有機被膜に関する。 レーザ全九瀞とした市4子写九方式プリンターは、両像
情報に応じた電気信号にょっ−(、レーザの変調を行な
わせ、この変調されたレーザをガルバノミラ−などによ
って感バ一体−ヒに九走査して静置潜像を形成した後、
トナー現1象および転写を順次施すことにより、所望の
再生画像を形成することができる。この際に用いらil
ていたレーザは、一般にヘリウム−カドミウム(発振波
長: 4416nnりやヘリウム−ネオン(発振波長:
632.8旧n )などのガスレーザであった。 従って、この様な光源に対して用いられる感光体は、6
50 nm、%jf iでに分光増感されていればよく
、例えばポリビニルカルバゾールとトリニトロフルオI
/ノンとの電荷移動錯体を感光層に用いたもの、セレン
によって増感させたテルル蒸着層を感光体に用いたもの
、電荷輸送層としてセレン蒸着層ケ導電層上に形成し2
、このセレン蒸着層上にセレンーデルル蒸it−を形成
させたことからなる感光層を用いたもの、増感色素によ
って分光増感させた硫化カドミウムを感光層に用いたも
の、また有機顔料を含有した電荷発生層と電荷輸送層に
機能分離し、その感光波長域を艮波長側址で増感した感
光層を用いたものなどが知られている。 一方、珀ディスク技術で用いる記に縁被膜は、光学的に
検出i+J能な小さな(例えH″、約1/L)ビットを
らせん状又は円形のトラック形態に: L。 て、旨密度情報を記憶することができる。この様なディ
スクに情報を書込むにJd、レーザ感応層の表向に集束
したレーザを走i〒[7、このレーザ光線が照射された
表面のみがピッlを形成し、このビット全らせん状又眞
[円形トラックの形態で形成する。レーザ感応層は、レ
ーリ′・工、ネルギーを吸収し7て光学的に検出iif
能なビットを形成できる。例えば、ヒートモード記録方
式では、レーザ感応層は熱エネルギー金吸収し、その個
所に蒸発又は融J仔により小さな四部(ビット)を形成
できる。寸だ、別のヒートモード記録方式では、照射を
れたレーザ・エネルA−一の吸収VCより、その個所に
光学的VCC検出能能ジ1jll Jロー差をイjする
ビットを形成でさる。 この光ディスクに記録された情報は、レーザをトラック
に沿って走査(−7、ビットが形成された部分とビット
が形成されていない部分の光学的変化を読み取ることに
よって検出される。例えば、レーザがトラックに沿って
走査され、ディスクにより反射されたエネルギーがフォ
トディテクターによってモニターされる。ビットが形成
されていない時、フォトディテクターの出力LL低下し
、一方ピットが形成されている時はレーザ光線は下層の
反射面によって充分に反射されフォトディテクターの出
力は大きくなる。 この様な光ディスクに用いる記録媒体として、これまで
アルミニウム蒸着膜などの金属薄膜、ビスマス薄膜、酸
化テルル薄膜やカルコゲナイド系非晶質ガラス膜などの
無機物質を主に用いたものが提案されている。 ところで、近年レーザとして小型でしかも低コストの上
、直接変調が司能な半導体レーザが開発されているが、
このレーザの発掘波長が750nm以上の波長を有して
いることが多い。 従って、この様な半導体レーザを用込て記録及び(又は
)再生を行なう、嚇合には、レーザ感応被膜の吸収特性
は長波長側に吸収ピーク(一般に750 n m〜8!
50nrnの領域)を有する心安がある。 しかし、これまでのレーザ感応被膜、特に無機材料を主
成分として形成した被膜は、レーザ光に対する反射率が
高めため、レーザの利用率が低くなり、高感度特性が得
られない欠点を有しており、(7かも感応波長域を75
Qn+η以−ヒとすることは、レーザ感応被膜の層(1
q成を複雑化したり、特に電子写真用感光抜脱の場合で
は使用した増感染料が繰り返し2帯IPt、、−1落光
を行なっているうちに、退色してし19などの欠点を有
している。 この様なことから、近年750旧■1以−ヒの波長光に
対して品感度特性を示す有機波膜が提案されて、いる。 例えば、米国11コI′ボ「第4315983号、f’
 Ke s e a c h山5c7Fosure J
 20517(1,981,5)に開示のビIJ IJ
ウム糸染料やl’ J、 Vac、 Sce。 Techno7?、 、 18(1)、 Jan、/F
’eb、 1,981. 、 PIO5−PIO9に開
示のスクェアリリウム染料を含有l−た有機被膜が75
Qnm以上のレーザに対[7て感応性であることが知ら
れている。 E7かし、一般に有機化合物は吸収特性が長波長領域に
なるほど不安定で、わずかの温度上昇によって分解され
やすいなどの問題点を不すると同時にilr、子写真力
式プリンターあるいは尤ディスクで装求される各種の特
性を満足する必要がある/こめ、必ずしも実用性の点で
十分に満足できるイ〕磯被1漠が開発されているものと
はイえないのが現状である。 従って、本発明の第1の目的は、新規且つ有用な有機被
膜を提供することにある。 本発明の41,2の1」的は、長波長側、特に750n
 +’n以上に吸収帯をもつ有機イ皮膜を提供すること
にある。 本発明の第3の1」的は、熱に対して安定な有機被膜を
提供することにある。 本発明の第4の目的は、レーザを光源とした電子写真方
式プリンターの電子写真用意)r;被膜を提供すること
にある。 本発明の第5の目的は、750nm以上の波長域で高感
度な特性を有する電子〜Jj、 fi用感光被膜を提供
することにある。 本発明の第6の目的は、光ティスフ記録用被膜を提供す
ることにある。 本発明の第7の目的は、750旧n以上の波長域で高感
度であり、しかも十分なS/N比をイ1−する光デイス
ク記録用被膜を提供することにある。 本発明のかかる1」的は、下記一般式(1)で71〈さ
hる化合物を含有する有機被膜に達成さ7Lる。 一般式(1) Zlは、II9.侯寸/ζは未置換の含5〆素1M素j
i(ア、例えば、チアゾール系列の核(例えばデアゾー
ル、4−メチルチアゾール、4−フェニルノ〜アソール
、5−メチルチアゾール、5−フェニルチー〕′ゾール
、4,5−ジメチルチアゾール、4,5−ジフェニルチ
アゾール、4−(2−チェニル)−チアゾールなど)、
ベンゾチアゾール系列の核(例えばベンゾチ”アゾール
、5−クロロベンゾチアゾール、5−メチルベンゾチア
ゾール、6−メチルベンゾチアゾール、5.6−−)メ
チルベンゾデアゾール、5−ブロモベンゾチアゾール、
5−フェニルベンゾチアゾール、5−メトキシベンゾチ
アゾール、6−メトキシベンゾチアゾール、5.6−シ
メトキシベンゾチアゾール、5,6−シオキシメチレン
ベンゾチアゾール、5−ヒドロキシベンゾチアゾール、
6−ヒドロキシベンゾチアゾール、4,5,6.7−チ
トラヒドロベンゾチアゾールなど)、ナフトチアゾール
系列の核(例えばナフトC2,1−d))チアゾール、
ナフト[1,2−a]チアゾール、5−メトキシナフト
[1,2−d)チアゾール、5−エトキシナフト[X、
2−a)チつ′ゾール、8−メトキシナフト[2,1−
cl)チアゾール、7−メトキシナフト[2,i −d
 ]チアゾールなど)、チオナフデンC7,6−d〕チ
アゾール系列の核(例えば7−メドキシチオナフテン[
7,6−(Mlチアン゛−ル)、オキサゾール系列の核
(例えば4−メチルオキサゾール、5−メチルオキ′I
fシーノド、4−フェニルオキサゾール、4.5−  
シフエニノL/オキサゾール、4−エチルオキサゾ゛−
)I7、・1,5−ジメチルオキサゾール、5−フェニ
ル側゛キ→ノ゛ゾール)、ベンゾオキサゾール系ケリの
核(例えばベンゾオキサゾール、5−クロロベンゾ刊〜
キツ゛ゾール、5−メチルベンゾオキサソール、5−フ
ェニルベンゾチアゾール、6−メチルベンゾオキサソー
ル、5,6−シメチルベンゾメキザゾール、5−メトキ
シベンゾオキサゾール、6−メトキシベンゾオキサゾー
ル、5−ヒドロキシベンゾチアゾ−ル、6−ヒド「1キ
シベンゾオギサゾールなど)、ツーフトオキサゾール系
列の核(1+11えばナツトC2,1−(1)オキサゾ
ール、ナフl−[1,2−tJ)オキサゾールなど〕、
セレナゾール系列の核(例えば4− メチルセレナソー
/l’、4−フェニルセレナソーAyfxと)、ベンゾ
セレナゾール系列のM (例A−&j、’ ”ン゛)゛
七レナゾール、5−クロロベンゾセレナソール、5−メ
チルベンゾセレナゾール、5.6−シメチルベンゾセレ
ナゾール、5−メトキシベンゾセレナゾール、5−メチ
ル−6−メドキシベンゾセ(/ナゾール、5.6−シオ
キシメチレンベンゾセレナゾール、5−ヒドロギルベン
ゾセレナゾール、4,5,6.7−テトシヒドロベンゾ
セレナゾールなど)、ナフトセンナゾール系列の核(例
えばナノl−(2,1−d ]セレナゾール、ナフトc
l、2−d3セレナゾール)、チアゾリン系列の核(1
;IJ L fよナアゾリ/、4−メチルチアゾリン、
4− ヒドロキシメチル−4−メチルチアゾリン、・1
,4−ビス−ヒドロキシメチルチアゾリンなど)、才ギ
すプリン系列の核(1+lIえばオキリーゾリン)、セ
レナゾリン系列の核(1(’IIえはセレノ−ゾリン)
、2−キノリン系列の核(例えばキノリン、6−メチル
キノリン、6−クロロキノリン、6−メトキシキノリン
、6−ニトキシキノリン、6−ヒドロキシキノリン)、
4−キノリン系列の核(例えばキノリン、(j−メトキ
シキノリン、7−メチルキノリン、8−メチルキノリン
)、1−イソキノリン系列の核(例えばインキノリン、
3.4−ジビドロイソキノリン)、3−イソキノリン系
列の核(例えばイソキノリン)、3.3−ジアルキルイ
ンドレーニン系列の核(イ列えば3,3−ジメチルイン
ドレニン、3.;ラーン ジメチル−5−クロロイ聾ドl/ニン、3.:う、5−
ン トリメチルイ叉ドレニン、3.3.7−1−ジメチルイ
ンドレニン)、ピリジン系列の核(1<1)えばピリジ
ン、5−メチルビリジン)、ベンゾイミダゾール系列の
核(例えばl−エチル−5,6−ジクロロペンゾルイミ
ダゾール、■−ヒト「コギシエチル−5,+3−ジクロ
ロベンゾイミダゾール、1−エチル−5−クロロペンソ
イミタソール、1−エチル−5,6−ジブロモベンゾイ
ミダゾール、1−エチル−5−フェニルベンゾイミダゾ
ール、■−エチルー5− フルオロベンゾイミダゾール
、1−エチル−5−/アノベンゾイミダゾ−=ル、]−
(]β−ア七トギシエチル−13−シアノベンゾイミダ
ゾール、■−エチルー5−り[l1l−(j−、シアノ
ベンゾイミダゾール、■−エチル=5− フルオロ−6
−ンアノベンゾイミダゾール、1−エチル−5−ア七チ
ルベンン゛イミダソ゛−ル、l−エチル−5−カルボキ
シベンゾイミダソール、1−エチル−5−エトキシカル
ボニルベンゾイミダゾール、■=エチルー5−スルファ
ミルヘンソイミタソール、l−エチル−5−N−エチル
スルファミルベンゾイミダソール、1−エチル−s、 
6− シフルオロペンソイミタソール、l−エチル−5
,6−ジシアツベンゾイミタソール、I−エチル−5−
エチルスルホニルベンゾイミダソール、l−エチル−5
−メfルスルホニルヘンソイミタソール、1−エチル−
5−トリプルオ[1メチルベンゾイミダゾール、l−工
−f−/l/−5−ト’)フルオロメチルスルホニルベ
ンゾ・イミダゾール、■−エチルー5−ドリブルオロメ
チルスルフイニルベンゾイミタソ−ルfx ト)をだ成
するに必要な非金属原子群を表わす。 Z2(、;↓、置換されてもよいビラン、チオビラン、
セレナビラン、ベンゾビラン、ベンゾチオビラン、ペン
ゾセレナヒラン、ナツトビラン、ナツトチオビラン又(
lよナフトセレナピランヲ、11成−するに必要な原子
群を示し、Xは(jf!^f原子、1俊素原子又はセレ
ン原子である。)背侯基としてl:’; 。 下ポの1t2ふ・よび1モ、に示す水素原子以外のもの
を具体的に挙げることができる7、 Z3は、置(婆又は未1亘碑の5d行(7く(は6tし
頃を形成I“る2揃の炭化水素基(−CH,、−C)−
42−、など)r示し7、こ7しらの5員又Q:j、5
 j、i自iVi &−,j: ヘ7ゼン環、カノタレ
ン環などと縮合されていてもよい。 it、 tt、水素原子又(・J:アルギル基(クリえ
ば、メチル、エチル、n−7’口ピル、l5O−フロビ
ル、1]−ブチル、・梯−ブチル、1so−ブチル、1
−ブチル、+1− アミル、t−アミル、11−′\ギ
ゾル、n−オフナル、t−オクチル基など)をIJくし
、さらに他のアルキル店、例えばi!rt 侯アルキル
基(Ni−1d、2−ヒドロキシエチル、3−じドfJ
キシゾロビル、4−ヒドロキシブチル、22−アセトギ
シエチル、カルボキシメチル、2−カルボキシエチル、
3−カルボキシプロピル2−スルホエチル、3−スルホ
ブチル、4−スルホブチル、3−スルフニー トクロピ
ル、4−スルフエートフチル、N−(メチルスルホニル
)−力ルハミルメチル、3−(アセチルスルファミル)
フロビル、4−(アセチルスルファミル)ブチルなど)
、環式アルキル基(例えば、シクロヘギシルなど)、ア
リル基((シ11,= CH− CH,Qアラルギル基
(例えば、ベンジル、ノエネチル、α−ナフチルメチル
、β−ナノチルメチルなど)、置換アラルギル、14S
?(例えば、カルボキシベンジル、スルホベンジル、ヒ
ドロキシブチルなト)を包沈する。 1らおよびlも. III:、各々 (a)  水素1.Gt子、(h)・・ロゲン原子:塩
素原子、犬素原子、沃素原子又は1価の有機残基、例え
ば (C)  アルギル基、特に炭素原子数1〜□ 1. 
5のアルギル基: 191Jえば、メチル、エチル、プ
ロピル、、イソブr’lビル、ブチル、1−  ブチノ
1、アミル、イソ−アミル、−キシル、オクチル、ノニ
ル、ドデシル (d)  アルコキシ基:例えば、メトキシ、−「トキ
シ、プロポキシ、ブトキシ、アミロギシ、ヘキソキシ、
オクトキシ (e)  71J−ル基:フェニル、αー#7fル、β
−ナフチル (f)  +1・′4侠アリール基ニトリル、ギシリル
、ビフェニル、エチルフェニル、メトギシフェニル、、
:[: l− キシツー丁ニル、″アミロキシフェニル
、ジメトキシフェニル、シェド=v□ yンフJ−二、
ル、ヒドロキンフェニル、クロロフェニル、ジクロロフ
ェニル、ブロモフェニル、シフロモノfーニル、二l−
 r+ノエニル、ジエチルアミ/フェニル、ジメチルγ
ミノフェニル、シベンジル−アミンノエニル (g)  スチリル (11)  置換スチリル基:メトギシスヂリル、ジメ
トキシスチリル、エトキシスチリル、ジエトキ・/スチ
リル、ジメチルアミノスチリル、ジエチル−rミノスチ
リル (i)+a:換又は未IIQI!l!8の複素環基:例
えば3−カルバゾリル、9−、−メチル−3−カルバゾ
リル、9−エチル−3−ノノルハソリル、9−1フルバ
ゾリル環を形成−4−ることかできる。 lへは、水素原子又はハロゲン原子(例えば、塩素原子
、臭素原子、沃素原子)を示す。 ■ Aは、塩化物イオン、臭化物イオン、ヨウ化II イオ
ン、過塩素酸塩イオン、ベンゼンスルホン酸塩イオン、
P−トルエンスルホン酸塩イオン、メチル硫酸1,品イ
オン、エチル硫酸塩イオン、を含むときには存在しない
。Inおよびnは、0又はlを示し、lは0、■又は2
を示す。 前記一般式(1)の化合物は、下記一般式(2)で示す
化合物と共鳴体全形成するが、本発明はかかる共鳴体を
包含するものである。 一般式(2) (式中、乙1〜Z3、R,−R4、X 、 A” 、l
 、 m J,□よび11は前記と同一の意味である。 但し−、Z,ばピIJ IJウム、チオピリリウム、セ
レナピリリウム、ベンゾビリリウム、ペンゾチメービリ
リウA 、ベンゾセレナピリリウム、ナツトピリリウム
、ナツトチオピリリウム又はナンドセレナピリリウムの
如くビIJ IJウム塩系列で表現される。)次に、前
記一般式(1)で示されるンア一ン化合化合物/fイ 
    化合物例    (4)これらの7′アニン化
合物は、米国特許第2.73/l、4100号公報に記
載ンΣれている方法によって合成すること−ができる。 一般式(1)において、/=Oの化合物は一般式(3)
で不される化合物と 一般式(3) (式中Z、 、 Z3.1(、、、1,(4,Aet、
・よびn IrJ、 前4−C定義し足ものと同様のも
のを”表わす。)一般式(4)または−役人(5)でノ
J−りΔ寸する化合物とを一般式(,1) 一−−7,−一一、 it、、−9Sゴ22℃cc、、x(j:’ A(”1 ■ら1%。 (式中Z2. X、 It、 、 R3,A′’および
ni &:j、 Mif述で定丁゛覧し/、−ものと1
百J!へpのものを衣ねし、1も、I/−1、ノー1−
ル仙、エチルJ、Qなどの−rルキル基を表ゎ4−8)
一般式(5) %式% したものと同)、にのものを表わす。)適当な溶媒中で
加熱すること(lこよりイ41 (−曾7.る。 −蝦″式(1)に赴いで、eニー1又は2である化合物
は、前述し/じ一般式(3)で示される化合物上、一般
式((()で 一般式(6) 、−−−Z2−−−5、 (式中Z2. it2. R,、、X、A” b f 
ヒmハ前aテ定義し7たものと同様のものを表わし、馬
はアセチル基、ゾロビAニル基、ベンゾイル基なトノア
シル基を衣わし、f(、は、フェニル基、ト・ルイル基
などのフェニル基を表わす。kは1又は2を表わす。) 示される化合物とを適当な溶媒中で加熱rることにより
イ4にられる。 これら一般式(1)またtよ一般式(2)で表わされる
化合物は爪合体と共晶錯体を形成することができ、これ
らの共晶錯体は本兄明に包含されるものである。 本発明の有機被膜は、光デイスク記録に用いることがで
きる。例えij、第1図に示す様な基板1の上に前述の
有機被膜Q2を形成した11ピ録媒体とすることができ
る。かかる有1・幾岐膜2(7i、前述のシアニン化合
物をA微蒸冶によって形成でき、−マたバインダー中に
前述のシアニン化合・吻を含有させた塗工液を塗缶ずど
)こと(6二よ′つでも形成することができる。塗工(
でよって4皮膜を形成する際、前述の化合物はバインダ
ー中に分数状態で含有さねていてもよく、あるいd非晶
質状態で訣7frされていてもよし・−)。好滴なバイ
ンダーと(7ては、広範な樹脂から選択することができ
る。具体的には、ニトロセルロース、リンrtセルロー
ス、硫酸セルロース、自tE+俊−ヒルロース、プロピ
オン前セルロース、醋酸セルロース、ミリスチン酸セル
ロース、バルミチン岐セルロース、酢e・グロビオン酸
セルローX 、酢M・酪酸セルロースなとのセルロ−ス
エーテル類、メチルセルロース、エチルセルロース、)
t1ビルセルロース、メチルセルロースナトのセルロー
スエーテル類、ポリスチレン、ボ’) kA化ビニル、
ポリ酢1宜ビニル、ポリビニルブチラール、ポリビニル
ーγセタール、ポリビニルアルコール、ポリビニルピロ
リドンなどのビニル荀・1月旨カ1、−スチI/ンーブ
タジエンコボリマー、スチレン−アクリロニトリルコポ
リマー、スチレン−ブタジェン−アクリrJ 、== 
トIJルコポリマー、塩化ヒニルー酢酸ビニルコポリマ
ーなどの共重合樹脂類、ポリメチルメタクリレート、ポ
リメチルアクリレート、ポリブチルアクリレ−1・、ポ
リアクリル〔貸、ポリメタクリル酸、ポリアクリル−ア
ミド、ポリアクリロニトリルなどのアクリル樹脂類、ポ
リエチレンデレフタレー トなどのポリエステル類、ポ
リ(4,4−イソプロビリデンジフエニレンーコー1,
4−シクロヘキシレンジメチレンカーボ不一ト)、ポリ
(エチレンジオキシ−3,3′−フエ;t1/ンチオカ
ーボネート)、ポリ(4,4’−イングロヒリデンジフ
ェニレンヵーボネート−コーテレノタレート)、ポリ(
4,4’−イソゾロピリデンジフエニレンヵーボネート
)、ポリ(4,4,’−−Sec−プチリデンジフェニ
レンヵーボネ・−ト)、ポリ(4,4′−イソプL]ピ
リデンジフェニレンカーポネー+−−−−ブロック−A
Aシエ天レし)などのボリアリレート%J 脂類、ある
、い(−」長リアミド類、ポリイミド類、エボギン仙脂
頑、フェノール位[脂ス、白、ポリエチレン、ポリプロ
The present invention relates to an organic film that can effectively absorb a laser, particularly a semiconductor laser having an oscillation wavelength on the long wavelength side, and convert it into another energy. The present invention relates to a novel organic film that can be applied to electrophotographic photosensitive coatings for printers, optical fibers that can be embedded and reproduced by semiconductor lasers, infrared cut filters, and the like. The Ichishikosha9 printer, which uses all lasers, modulates the laser using electrical signals corresponding to the information on both images, and then uses a galvano mirror or the like to combine the modulated laser with a sensor. After nine scans to form a static latent image,
By sequentially performing toner development and transfer, a desired reproduced image can be formed. Used in this case
Lasers that used to be used are generally helium-cadmium (oscillation wavelength: 4416 nn) or helium-neon (oscillation wavelength:
632.8 (formerly n)). Therefore, the photoreceptor used for such a light source is 6
It may be spectrally sensitized at 50 nm, % jf i, for example, polyvinyl carbazole and trinitrofluor I.
A charge transfer complex with /non is used as a photosensitive layer, a tellurium evaporated layer sensitized by selenium is used as a photoreceptor, and a selenium evaporated layer is formed on a conductive layer as a charge transport layer.
, those using a photosensitive layer formed by forming selenium-delul vapor on this selenium vapor-deposited layer, those using cadmium sulfide spectrally sensitized with a sensitizing dye, and those containing an organic pigment. A photosensitive layer is known in which the photosensitive layer is functionally separated into a charge generation layer and a charge transport layer, and the photosensitive wavelength range of the photosensitive layer is sensitized on the wavelength side. On the other hand, the edge coating used in the amber disk technology consists of optically detectable small (e.g. H'', approximately 1/L) bits in the form of a spiral or circular track: L. to convey density information. To write information on such a disk, a focused laser beam is run on the surface of the laser-sensitive layer, and only the surface irradiated with this laser beam forms a pill. , this bit is formed entirely in the form of a helix or a circular track.
It is possible to form a functional bit. For example, in a heat mode recording method, the laser sensitive layer absorbs thermal energy and forms small bits at that location by evaporation or melting. In another heat mode recording method, a bit is formed at that location by the absorbed VC of the irradiated laser energy A-1, which increases the optical VCC detectability difference. Information recorded on this optical disk is detected by scanning a laser along a track (-7) and reading optical changes in areas where bits are formed and areas where no bits are formed. The energy scanned along the track and reflected by the disk is monitored by a photodetector. When no bits are being formed, the output LL of the photodetector is reduced, while when pits are being formed, the laser beam is The output of the photodetector increases due to sufficient reflection from the reflective surface of the optical disk.Up until now, recording media used for such optical discs have been made of metal thin films such as aluminum evaporated films, bismuth thin films, tellurium oxide thin films, and chalcogenide-based amorphous glass films. In recent years, semiconductor lasers have been developed that are compact, low-cost, and capable of direct modulation.
The excavation wavelength of this laser often has a wavelength of 750 nm or more. Therefore, when such a semiconductor laser is used for recording and/or reproduction, the absorption characteristics of the laser-sensitive coating have an absorption peak on the long wavelength side (generally 750 nm to 8!).
50nrn). However, conventional laser-sensitive coatings, especially coatings formed mainly of inorganic materials, have a high reflectance to laser light, resulting in a low laser utilization rate and the disadvantage that high sensitivity characteristics cannot be obtained. (7) The sensitive wavelength range is 75
Qn+η or higher means that the layer of laser sensitive coating (1
It has drawbacks such as complicating the q-formation, and fading of the color when the sensitizing dye used is repeatedly subjected to 2-band IPt, -1 light exposure, especially in the case of exposure removal for electrophotography. are doing. For this reason, in recent years, organic wave films have been proposed that exhibit quality sensitivity characteristics for light with wavelengths of 750 mm and above. For example, United States 11
Ke se a ch mountain 5c7 Fosure J
Bi IJ IJ disclosed in 20517 (1,981,5)
Umu thread dye and l' J, Vac, Sce. Techno7? , , 18(1), Jan, /F
'eb, 1,981. , PIO5-PIO9 contain an organic coating containing a square aryllium dye disclosed in 75
It is known to be sensitive to lasers of Qnm or larger. E7 However, in general, organic compounds have absorption characteristics that are unstable in the longer wavelength region, and are easily decomposed by a slight temperature rise. However, the current situation is that not all isocovers have been developed that are fully satisfactory in terms of practicality. Accordingly, a first object of the present invention is to provide a new and useful organic coating. The object of the present invention is the long wavelength side, especially 750n
An object of the present invention is to provide an organic film having an absorption band above +'n. A third object of the present invention is to provide a thermally stable organic coating. A fourth object of the present invention is to provide an electrophotographic preparation film for an electrophotographic printer using a laser as a light source. A fifth object of the present invention is to provide a photosensitive film for electrons to Jj, fi that has high sensitivity characteristics in a wavelength range of 750 nm or more. A sixth object of the present invention is to provide an optical tisf recording film. A seventh object of the present invention is to provide an optical disk recording film that is highly sensitive in the wavelength range of 750 nm or more and has a sufficient S/N ratio. The first objective of the present invention is achieved by an organic film containing a compound represented by the following general formula (1). General formula (1) Zl is II9. Hou size/ζ is unsubstituted 5〆 element 1M element j
i (a, for example, thiazole series nuclei (e.g. deazole, 4-methylthiazole, 4-phenylno-azole, 5-methylthiazole, 5-phenylthi]'zole, 4,5-dimethylthiazole, 4,5-diphenylthiazole) , 4-(2-chenyl)-thiazole, etc.),
Benzothiazole series nuclei (e.g. benzothiazole, 5-chlorobenzothiazole, 5-methylbenzothiazole, 6-methylbenzothiazole, 5.6-)methylbenzodeazole, 5-bromobenzothiazole,
5-phenylbenzothiazole, 5-methoxybenzothiazole, 6-methoxybenzothiazole, 5,6-simethoxybenzothiazole, 5,6-cyoxymethylenebenzothiazole, 5-hydroxybenzothiazole,
6-hydroxybenzothiazole, 4,5,6,7-titrahydrobenzothiazole, etc.), naphthothiazole series nuclei (e.g. naphthoC2,1-d)) thiazole,
naphtho[1,2-a]thiazole, 5-methoxynaphtho[1,2-d)thiazole, 5-ethoxynaphtho[X,
2-a) Thitsuzole, 8-methoxynaphtho[2,1-
cl) Thiazole, 7-methoxynaphtho[2,i-d
]thiazole), thionafdene C7,6-d]thiazole series nuclei (e.g. 7-medoxythionaphthene [
7,6-(Ml chain), oxazole series nuclei (e.g. 4-methyloxazole, 5-methyloxazole)
f seanod, 4-phenyloxazole, 4.5-
Sifuenino L/oxazole, 4-ethyloxazole
) I7, 1,5-dimethyloxazole, 5-phenyl side → nozole), benzoxazole-based keratinium (e.g. benzoxazole, 5-chlorobenzo)
Kituzole, 5-methylbenzoxazole, 5-phenylbenzothiazole, 6-methylbenzoxazole, 5,6-dimethylbenzomexazole, 5-methoxybenzoxazole, 6-methoxybenzoxazole, 5-hydroxybenzothia sol, 6-hydro (1-xybenzogisazole, etc.), nuclei of the twoft oxazole series (1+11, such as natu C2,1-(1) oxazole, naph l-[1,2-tJ) oxazole, etc.],
Nuclei of the selenazole series (e.g. 4-methylselenazole/l', 4-phenylselenazole Ayfx), M of the benzoselenazole series (e.g. A-&j, '''n゛)'7-lenazole, 5-chlorobenzoselenium Sol, 5-methylbenzoselenazole, 5.6-dimethylbenzoselenazole, 5-methoxybenzoselenazole, 5-methyl-6-medoxybenzose(/nazole, 5.6-cyoxymethylenebenzoselenazole, 5- hydrogylbenzoselenazole, 4,5,6,7-tetoxyhydrobenzoselenazole, etc.), naphthocenazole series nuclei (e.g. nano l-(2,1-d ) selenazole, naphtho c
l, 2-d3 selenazole), thiazoline series nuclei (1
;IJ L f Yonazoli/, 4-methylthiazoline,
4-hydroxymethyl-4-methylthiazoline, 1
, 4-bis-hydroxymethylthiazoline, etc.), nuclei of the Saigipurine series (1+lI is ochryzoline), nuclei of the selenazoline series (1('II is selenozoline)
, 2-quinoline series nuclei (e.g. quinoline, 6-methylquinoline, 6-chloroquinoline, 6-methoxyquinoline, 6-nitoxyquinoline, 6-hydroxyquinoline),
4-quinoline series nuclei (e.g. quinoline, (j-methoxyquinoline, 7-methylquinoline, 8-methylquinoline), 1-isoquinoline series nuclei (e.g. inquinoline,
3.4-dihydroisoquinoline), 3-isoquinoline series nuclei (e.g. isoquinoline), 3.3-dialkylindolenine series nuclei (e.g. 3,3-dimethylindolenine, 3.;randimethyl-5- Chloroi Deaf L/Nin, 3.: U, 5-
pyridine series nuclei (1<1) e.g. pyridine, 5-methylpyridine), benzimidazole series nuclei (e.g. l-ethyl-5,6- Dichloropenzoimidazole, ■-Human Kogiethyl-5,+3-dichlorobenzimidazole, 1-ethyl-5-chloropenzoimidazole, 1-ethyl-5,6-dibromobenzimidazole, 1-ethyl-5-phenyl Benzimidazole, ■-ethyl-5-fluorobenzimidazole, 1-ethyl-5-/anobenzimidazole, ]-
(]β-ethyl-13-cyanobenzimidazole, ■-ethyl-5-[l1l-(j-, cyanobenzimidazole, ■-ethyl-5-fluoro-6
-anobenzimidazole, 1-ethyl-5-acylbenzimidazole, l-ethyl-5-carboxybenzimidazole, 1-ethyl-5-ethoxycarbonylbenzimidazole, ■=ethyl-5-sulfamidazole ruhensoimitasole, l-ethyl-5-N-ethylsulfamylbenzimidazole, 1-ethyl-s,
6- Cyfluoropensoimitasol, l-ethyl-5
, 6-dicyazbenzimitazole, I-ethyl-5-
Ethylsulfonylbenzimidazole, l-ethyl-5
-Mefsulfonylhensoimitasol, 1-ethyl-
5-Triple O[1-methylbenzimidazole, l-f-/l/-5-t') fluoromethylsulfonylbenzo-imidazole, ■-ethyl-5-drifluoromethylsulfinylbenzimitazole fxt) Represents a group of nonmetallic atoms necessary to form a metal. Z2(,;↓, optionally substituted biran, thiobilane,
Selenaviran, benzobilan, benzothioviran, penzoselenahiran, natsutoviran, natsutothioviran (
l indicates the atomic group necessary to form naphthoselenapyranwo, 11. We can specifically list things other than the hydrogen atoms shown in 1t2fu and 1mo in the lower part. Formation I" Two sets of hydrocarbon groups (-CH,, -C)-
42-, etc.) r indicates 7, this 7 these five members or Q: j, 5
j, i iVi &-, j: May be fused with a he7zene ring, canotalene ring, etc. it, tt, hydrogen atom or (・J: argyl group (for example, methyl, ethyl, n-7′-pyl, 15O-furovir, 1]-butyl, ・hex-butyl, 1so-butyl, 1
-butyl, +1-amyl, t-amyl, 11-'\gizol, n-ofnal, t-octyl, etc.) and further add other alkyl groups, such as i! rt Hou alkyl group (Ni-1d, 2-hydroxyethyl, 3-d fJ
xizolovir, 4-hydroxybutyl, 22-acetogyethyl, carboxymethyl, 2-carboxyethyl,
3-carboxypropyl 2-sulfoethyl, 3-sulfobutyl, 4-sulfobutyl, 3-sulfonyl toclopyl, 4-sulfatephthyl, N-(methylsulfonyl)-halhamylmethyl, 3-(acetylsulfamyl)
Furovir, 4-(acetylsulfamyl)butyl, etc.)
, cyclic alkyl group (e.g., cyclohegycyl, etc.), allyl group ((C11,=CH-CH,Q aralgyl group (e.g., benzyl, noenethyl, α-naphthylmethyl, β-nanothylmethyl, etc.), substituted aralgyl, 14S
? (eg, carboxybenzyl, sulfobenzyl, hydroxybutyl). 1 et al. and l also. III:, each (a) hydrogen 1. Gt atom, (h)...Rogen atom: chlorine atom, dog atom, iodine atom, or monovalent organic residue, such as (C) an argyl group, especially a carbon atom number of 1 to □ 1.
Argyl group of 5: 191J, for example, methyl, ethyl, propyl, isobutyl, butyl, 1-butyno-1, amyl, iso-amyl, -xyl, octyl, nonyl, dodecyl (d) Alkoxy group: for example, Methoxy, - ``toxy, propoxy, butoxy, amyloxy, hexoxy,
Octoxy (e) 71J- group: phenyl, α-#7f, β
-naphthyl (f) +1・'4 aryl group nitrile, gysilyl, biphenyl, ethylphenyl, methoxyphenyl,
: [: l- xy2-dynyl, ``amyloxyphenyl, dimethoxyphenyl, shed=v□ymph J-2,
, hydroquinphenyl, chlorophenyl, dichlorophenyl, bromophenyl, cyfuromonofyl, di-
r+noenyl, diethylami/phenyl, dimethyl γ
Minophenyl, cybenzyl-aminenoenyl (g) Styryl (11) Substituted styryl group: methoxystyryl, dimethoxystyryl, ethoxystyryl, diethoxystyryl, dimethylaminostyryl, diethyl-rminostyryl (i) + a: substituted or unIIQI! l! Heterocyclic group of 8: For example, 3-carbazolyl, 9-,-methyl-3-carbazolyl, 9-ethyl-3-nonolhazolyl, 9-1 can be used to form a flubazolyl ring. 1 represents a hydrogen atom or a halogen atom (eg, a chlorine atom, a bromine atom, an iodine atom). ■ A is chloride ion, bromide ion, iodide II ion, perchlorate ion, benzenesulfonate ion,
It does not exist when it contains P-toluenesulfonate ion, methyl sulfate ion, or ethyl sulfate ion. In and n represent 0 or l, l is 0, ■ or 2
shows. The compound of the general formula (1) forms a resonant body with the compound represented by the following general formula (2), and the present invention includes such a resonator. General formula (2) (In the formula, Otsu1 to Z3, R, -R4, X, A", l
, m J, □ and 11 have the same meanings as above. However, Z, Bapyl, thiopyrylium, selenapyrilium, benzobyrylium, penzothymebilirium A, benzoselenapyrylium, natutopyrylium, natuthiopyrylium or nandoselenapyrilium. IJ IJ is expressed in the salt series. ) Next, the ananine compound represented by the general formula (1)/f i
Compound Examples (4) These 7' anine compounds can be synthesized by the method described in US Pat. No. 2.73/1, No. 4100. In general formula (1), /=O compound is represented by general formula (3)
and the compound of general formula (3) (where Z, , Z3.1(,,,1,(4,Aet,
・N IrJ, represents the same thing as the previous 4-C definition.) General formula (4) or - official (5), and a compound whose size is Δ is expressed by the general formula (,1). 1--7, -11, it, , -9Sgo22℃cc, ,x(j:'A("1 ■ et al. 1%. (In the formula Z2.X, It, , R3, A'' and ni &:j, Mif description to see fixed page/, - thing 1
100 J! Hep's stuff, 1 too, I/-1, no 1-
-rlkyl group such as rusen, ethyl J, Q, etc. ゎ4-8)
General formula (5) % formula % (same as %), represents the . ) By heating in a suitable solvent (l 41 (-曾7.ru. ), general formula (() in general formula (6), ---Z2---5, (in the formula Z2. it2. R, , X, A'' b f
Him represents the same thing as defined above, and horse is a tonoacyl group such as an acetyl group, zolovanyl group, benzoyl group, and f(, is a phenyl group, toruyl group, etc.). represents a phenyl group. k represents 1 or 2) A4 can be obtained by heating the compound shown above in a suitable solvent. These compounds represented by the general formula (1) or t and the general formula (2) can form a eutectic complex with the claw coalescence, and these eutectic complexes are included in the present invention. The organic coating of the present invention can be used for optical disc recording. For example, it may be an 11-layer recording medium in which the above-mentioned organic film Q2 is formed on a substrate 1 as shown in FIG. Such a coating film 2 (7i, the above-mentioned cyanine compound can be formed by A micro-steaming, and a coating solution containing the above-mentioned cyanine compound/rostol in the mata binder can be applied). (It is also possible to form 6 or 2 pieces. Coating (
Therefore, when forming a film, the above-mentioned compound may be contained in the binder in a fractional state, or may be contained in an amorphous state. Drop-compatible binders (7) can be selected from a wide range of resins, including nitrocellulose, phosphor-rt cellulose, cellulose sulfate, auto-tE + hirulose, prepropionic cellulose, cellulose acetate, myristic acid. Cellulose, valmitinated cellulose, cellulose ethers such as vinegar e and cellulose globionic acid X, vinegar M and cellulose butyrate, methyl cellulose, ethyl cellulose,)
t1 vinyl cellulose, cellulose ethers of methylcellulose, polystyrene, ka-vinyl,
Vinyl compounds such as polyvinyl vinegar, polyvinyl butyral, polyvinyl gamma cetal, polyvinyl alcohol, polyvinylpyrrolidone, -styrene/butadiene copolymer, styrene-acrylonitrile copolymer, styrene-butadiene-acrylic rJ, ==
Copolymer resins such as vinyl chloride copolymer, vinyl chloride-vinyl acetate copolymer, polymethyl methacrylate, polymethyl acrylate, polybutyl acrylate, polyacrylic, polymethacrylic acid, polyacrylamide, polyacrylonitrile, etc. acrylic resins, polyesters such as polyethylene derephthalate, poly(4,4-isopropylidene diphenylene-co-1,
4-cyclohexylidene dimethylene carbonate), poly(ethylenedioxy-3,3'-phene; t1/thiocarbonate), poly(4,4'-ingrohylidene diphenylene carbonate) rate), poly(
4,4'-isozolopylidene diphenylene carbonate), poly(4,4,'--Sec-butylidene diphenylene carbonate), poly(4,4'-isopropylidene diphenylene carbonate), poly(4,4'-isopropylidene diphenylene carbonate) Phenylene carpone +---Block-A
Polyarylate %J Fats, Aru, I (-) Long aryamides, polyimides, Evogine sensin, phenolics [fats, white, polyethylene, polypropylene]

【二。 レン、塩素化ポリエチレン7tどのポリ側しノfン美白
など蒼:用いるく二とができる。 塗工の[祭に使J41できる有機箔削は、バインダーの
イ(11類や前+%の化合物をバインダー「1弓C含イ
]さ伊る際、分数状1δIと−】るか、あるいi:l非
品′h状j?嗅と1′るかに」二って異ろ−ってくるが
、−WZ fでCユ、メタノール、エタノール、イソゾ
ロパノールなどのアルコール迎、’7 十トン、メカル
エチルケトン、シクロヘキザノン庁トのクトン類、N、
N−−ジメーf−ルホル11アミド、i4.N−ジメナ
ルアセトアミドなどの−rミド川用ジメf−ルスルボギ
シドなどのス/lホギシドj、白、−7トラヒドI−z
ノラン′、シオギーリン、エチレングリコアー11士ツ
メチルエーテルなどのエーテル類、酢酸メチ/l/、酢
酸エチル、酢酸ブチルなどの−V−ス゛−7″ル珀、グ
ロロポルム、4 化メチlノン、シクL1ルエf−レン
四塩化炭素、トリクロルエチレンなどの脂肪族ハロゲン
化層化水素類あるいはベンゼン、トルエン、ギシレン、
リグロイン、モノクロルベンゼン、ジクロルベンゼンな
どの芳占族J、qなどを用いることができる。 塗工&j:、i−2漬コーブイング法、スプレーコーデ
ィング法、スピンナーコーティング法、ビードコーティ
ング法、マイヤーバーコーティング法、ブレードコーテ
ィング法、ローラーコーティング法、カーテンコーティ
ング法などのコーティング法を用いて行なうことができ
る。 バインダーとともに41機被膜2を形成する際、前述の
シアニン化は物の金山11は、イ〕(幾被膜2中におい
で1〜90−ijj叶%、々fましくりま、20〜70
−、rJCKいである。士だ、41機破膜2の乾燥I1
1さ厚あるいは蒸4膜)lIは、10ζクロン以ド、好
ましくは2ミクロン以下である。 17;IJilとして!Zli2、ポリエステル、アク
リル樹脂、ポリオレフィン樹脂、フェノール樹脂、エポ
キシ樹脂、ポリアミド、ポリイミドなどのプラスチック
、ガラスあるい’t、−J、’金L(Ii類などを用い
ることができる。 また、本発明(rよ、第2図にれくV様に基板1と有機
被膜20間に反射層3を設け・0ことがでへる。反射層
3ば、アルミニウム /ii、l、j、クロムなどの反
射性金楓の蒸着層又はラミ不−ト層とシ゛−ることがで
きる。 有イ幾被膜2は、第3図(・こ]■〈−を県東で; 7
シ/ζレーザ尤線4の照射flCよってヒツト5を形成
−4゛ろことができる。ビット5の深さを有機al I
Iψ2のllf、lI厚と同一・にすると、ピットgt
<域に1−、−ける反射率を増加させるととう;できる
。+tWみ出[7の際1.り込みに用いたレーザ光線と
回−のl成長をイ1するが、強l]fの小さいレーザ光
1腺を用いfj、げ、tY;+1 ツム出し光がビット
領域で大きく反射ンぎ7Iるが、非ピット領域(〆こお
い−r fd吸収さtする。−まfC、別の方法は有機
被膜2が吸収する第1の伎Jiのレーザ光線で実時間プ
1゜込みを行ない、読み出(−7にイ)依イ皮膜2を実
質的に透過する第2の波間のレーザ光線を用いることで
ある。;杭み出L71/−ザ光線は、ビット領域と非ビ
ット領域における異なる臆jlによって生じる反射相の
変化に応丼することができる。 本発明の有機被B@は、−Tルゴンレーザ(発振波長4
880m )、ヘリウム−ネオンレーザ(発振i(+ 
633 nm ) 、ヘリウム−カドミウムレーザ(発
振波長4420m )などのガスレーデ−の照射によっ
て記録することもd工能であるが、好ま12<は750
nm以上の波長を有するレーザ、/+、′l−にガリウ
ム−アルミ;−、ウムーヒ素半導体レーザ(発揚波長7
80旧11)などの近赤外あるいは赤外領域((η3撮
波長を有するレーザ光線の照射によってiIz録4″る
〕i法が通[2ている。また、読み出し2のためにCJ
l、前述のレーザ)’f: #i!を用いることができ
る。このt祭、−ト込みと読み出〔〜全回−波長のレー
ザで行なりことができ、また異なる波長のレーザで行な
うことができる。 木屈明の別の具体例でし1、電子写出、感九体の感光層
として適月4することができる。斗だ、かかる感光層を
1[シ荷発生層と電荷輸送層に機能分離(−た電子写J
!1.感光体におけど)市イ四工すiソ)一層とl〜で
も適用することができる。 市;荷発生層&t 、 (−’分な吸−1c: YN−
を’+!+ 2)ために、でさる限り多くの前述のシア
ニ、ン化合′吻を含イイし、且つ発生した型面キャリア
の飛程を−短かく1゛るだめに薄膜層、例えば5ミクロ
ン以IS1灯iしl↓0.01ミクロン〜1ミクロンの
膜厚をもつ薄膜層とすることが好it、い。このことC
」2、入射光+44Hのに部分が’fli’、壱丁冗生
層で吸収さノ1−で、多くのTl(、倚キャリア全生成
すること、さらに5i′、生(〜たftj荷ギヤリアを
再結合N・捕獲(トラップ)(・こより失(占」°るこ
となく′小、イI;IΦ1′iNfべ層pC〆十人−る
必侠がああことにす吊因し−しいる。 市’、 (;J 9も生層は、A’lt’lsのシーア
ーン化合物を適当f(バインダーQで一分Diさせ、こ
れを基体の1−に塗上することによって形成でき、−ま
た真空な着ν2百により蒸着膜を形成ずろことVこよっ
て得ノ)6とができ乙。1j荷梵牛層ケ塗」6広′より
−c′形成−する際に用いつるバインダーとL7で??
目ム!1fjj、 j4−絶縁性4+14脂から選択で
き、斗/VポリーN−ビl;ルカルバゾール、ポリビニ
ルアントラセンやポリビニルピレンなどの有機光導電、
性ポリマーから選択できろ。好寸り、 <け、ポリビニ
ルブチラール、ポリ了りレート(ビスフェノ−、A/A
とフタル酸の縮重合体など、ポリカーボネ−1・、ポリ
エステル、フェノキシ樹脂、ポリ酢酸ビニル、アクリル
樹脂、ポリアクリルアミド樹脂、ポリアミド、ボリビJ
ニルヒ■ノジン、セルロース系樹脂、つl/メタノ脂、
エボギシ樹脂、カゼイン、ポリビニルアルコール、ポリ
ビニルピロリドンなどの絶縁性樹脂を挙げることができ
る。電荷゛竜生層中V(−合有一する411.1脂ti
、80爪昂%μ下、好1しく i):l 40140i
゛%以t゛が僧している。 これらの樹脂を浴解すz1溶剤は、樹脂の千■類によっ
て異なり、土/こ上述の電荷輸送層やF側層を溶解[2
ないものから選択することが好ましい。具体的な有機溶
剤としては、メタノール・、エタノール、イソプロ・(
メールなどのrノドコール類、アセトン、メチノドエチ
ルケトン、シクロヘキサノンなどのケトン、14、N、
N−ジメチルホルムアミド、N、N−ジメチルア七ドア
ミド、tどのアミド類、ジメチルスルホギンドなどのス
ルホキシド類、テトラヒトL2ノラン、ジオキナン、エ
チレングリこ〕−ルモノメチルエーテルftトのエーテ
ル類、If’lE+”伎メチル、酢酸ニーブールなどの
エステル類、クロロホルノ1、塙什メチレン、ジクロル
エチレン、四塩化炭素 ) IJ りr+ ルコl チ
レンなどの))17肪族ノヘロゲン化炭化水素頃あるい
に1、ベンゼン、トルエン、キンしメン、リグローイン
、モノクロルベンゼン、ジクロルベンゼンIどの芳斜族
類などに1(]いることかでさる、。 ]塗−1ニレ丁j1浸漬コーティング〃2、スソ°1/
−二了−テイング法、スビンナーコーj−イ/グθ2、
ビードコーチインクrllハ マイヤーバーニ1−ディ
/グ法、プtノードコーティング法、[」−ラーーーJ
−i−イング法、カニーデンコーテ・イングアに f、
Hトの二1−ティング法に用い−C行なうことができる
。φ:燥(1、室昌V(おける指触乾燥後、加熱乾燥−
するh法が好外しい。力IJ熱乾煙ば、30℃〜200
 ’Cの1島度で5分〜2時間の範1川のtill’、
’間で、静+I−1たr/、i、送風下で行なうことが
できる。 電荷輸送層(d % riillll(の箱;荷発生層
と電気的に接続されており、電界のイを在ドで電荷発生
層からt上人された電荷キャリアを受は取るとともに、
これらの′重荷キャリ′rを表面まで輸送できる機能を
イj′シている。この際、この電荷輸送層は、電荷発生
層の上に槓1→されていてもよく斗だそのしに47〔層
されていてもよい。しか]]7市、荷輸送局は、[tl
、荷発生層の土に積層されていることが望ましい。 電荷輸送層における電荷キャリア全輸送する物質(以ト
、単に、i、荷輸送物實という)は、前述の電(Wr 
9も生層が感応する電磁波の波艮域に実質的に非感応性
であることが好ましい。ここで宮う「電磁波」とは、r
線、X線、紫外線、…゛祝光線、近赤外線、赤外線、遠
赤外線などを包含する広義の「光線」の定義を包含する
。電荷輸送層の光感応性波長域が電荷発生j@のそれと
一致またはオーバーラツプする時には、両者で発生]−
だ電荷キャリアが相互に捕獲し合い、結果的には感度の
低下の原因となる。 電荷輸送物質とE〜ではf「子輸1本件物質と(IF孔
輸送性物質があり、電子輸送性物t4としてし1、クロ
ノ1−アニル、ブロモアニル、デトラシアノエチレン、
テトラシアノキノジメタン、2,4.7−ドリニトロー
9−フルメレノン、2.4.5.7− テトラニトロ−
9−フルオレノン、2.4.7−)リニトロー!(−ジ
シアノメチ1/ンフルオレノン、2、4.、5.7−チ
トラニトロキザントリニトロヂオギザントン畳のTI・
、子吸引性物質やこれら電子吸引物符を高分子化1−7
りこもの居・がある。 +JE孔輸送性物tEiとしては、ピレン、N−エチル
カルバゾール、N−インゾロビル力ルバソール、N−タ
ナルーN−フェニルヒドラジノ− 3−メチリテン−9
−エチルカルバソー ル、N,N−ジフェニルヒドラジ
ツー:う〜メチリデンー 9−エチルカルバゾール、N
,N−シフゴーニルヒドラジノ−3−メチリデン〜l 
(+ーエチルノエノチアジン、N,N−ジフェニルヒド
ラジノ−3−メチリデン−1()−エチルフェノキサジ
ン、P−ジエチルアミノスチリルデヒl’−1視,N−
 ジフェニルヒドラゾン、P−ジエチルアミノベンズア
ルデヒド〜N−αーナフヂルーNーフェニルヒドラゾン
、P−ビiコリジノベンズ゛アルデヒド− N,N− 
ジフェニルヒドラゾン、1.、 3. 3−トリメチル
インドレニン−の−アルデヒド−N,N−ジフェニルヒ
ドラゾン l)−ジエチルベンズアルデヒド−3−メチ
ルベンズチアゾ1ノノン−2−ヒドラゾン等のヒドラゾ
ン類、2,5−ビス(P−ジエチルアミノフェニル)−
 1. 3. 4 − オギサジアゾー・ル、1−フェ
ニル−3−(P−ジエチルアミノスチリル)−5〜(P
−ジエチルアミンフェニル)ピラゾリン、1.−[キノ
リル(21 ] − 3−( P−ジエチルアミノスチ
リル)−5−(P−ジエチルアミノフェニル)ピラゾリ
ン、i − (ピリジル(2) ]−3 − ( P−
ジエチルアミノスチリル) − 5 − ( P−ジエ
チルアミノフェニル)ピラゾリン、l−[6−メドキシ
ービリジル(2+ ] − 3 − ( 1)−ジエチ
ル“アミノスチリル) − 5 − ( P − 9エ
チルアミノフエニル)ピラゾリン、1−〔ピリジル(3
)]−:3−( P −ジエチルアミノスチリル)〜5
〜(P〜ジエチルアミノフェニル)ピラゾリン、i.−
(レビジルf2+ 1−3 − ( P−ジエチルアミ
ノスチリル)−5 − ( P − ジエチルアミノフ
ェニル)ピラゾリン、1−〔ピリジル(2+ LL −
 3〜(P−ジエチルアミノスチリル)−4−メチル〜
5〜( II’ −ジエチルアミノフェニル)ピラゾリ
ン、x−r)ピリジル(21 ]−3−(α−メチル−
P〜ジエチルアミノスチリル) −、− 5 − ( 
P−ジエJ゛ルγミノ7mニル)ピラゾリン、■ーフェ
ニルー3−(P−ジエチルアミノスチリル)−4−メチ
ル−5(p)エチルアミノフェニル)ピラゾリン、1−
フェニル−3−(α−ベンジル−P−ジエチルアミノス
チリル) − 5−( P−ジエチルアミノフェニル)
ピラゾリン、スピロピラゾリンなどのピラゾリン類、2
−(IJ−ジエチルアミノスチリル)− 6− ジェチ
ルアミノベンズオオサソール、2−(P−シェチルアミ
ノフエJ−ル)−4−(p−ジメチルアミノフェニル)
−5−(2−クロロフェニル)オキサゾール等のオキサ
ゾール系化合物、2−、(P−ジエチルアミノスチリル
)−6−ジニチルアミノベンゾチアゾール等のチアゾー
ル系化合物、ビス(4−ジエチルアミン−2−メチルフ
ェニル)−フェニルメタン等のトリアリールメタン系化
合物、■、1−ビス(4−N、N−ジエチルアミノ−2
−メチルフェニル)へブタン、1,1,2.2−テ]・
ラキス(4−、−N、N−一−ジメチルアミンー2−メ
チルフェニル)エタン谷のポリアリールアルカン類、ト
リフェニルアミン、ポリ−N−ビニルカルバゾール、ポ
リビニルピレン、ポリビニルアントラセン、ポリビニル
アクリジン、ポリ−9−ビニルフェニルアントラセン、
ピレンーポルムアルテヒ)” 樹脂、エチルカルバゾー
ルホルムアルデヒド樹脂等がある。 これらの有産電荷輸送物質の他に、セレン、セレン−テ
ルルアモルファスシリコン、健化カドミウムなどの無機
材料も用いることができる。 また、これらの山:Cf1iii1mX !l勿賀は、
Iセ111/こは2紳以上組合せで用いることができる
。 形成できる。バインダーとし〜て使+41できる樹脂は
、例えばアクリル樹脂、ボIJ 71ルートリエステル
、ポリカーボネート、ポリスチレン、アクリロニトリル
ースチVンコボリマー、アクリロニトリル−ブタジェン
コポリマー、ポリビニルブチラール、ポリビニルホルマ
ール、ポリスルポ/、ポリアクリルアミド、ポリアミド
、塩素化ゴムなどの絶縁(、+l−樹脂、あるいしj−
ポリーNーヒニルカルバゾール、ポリビニルア/トラセ
ン、ポリビニルピレンなどの有1゛碍尤導′市性ポリマ
ーを挙げるこ七ができる。 714’, 荷幅+A 1m I/’:l 、  ’I
K (fif 4  ヤ リ 〕” を lti.ii
 a  で き 、イ)pie界があるので、必要以上
に膜Il#を厚ぐすることができない。一般的にfl:
i,5ミクロン〜30ミクロンであるが、好ましい範1
用は8ミクロン〜20ミクロンである。塗」二によって
′dで、荷rxi r.ン(1・周を形成する除17U
は、前述した様な適当なコーティング法を用いることが
できる。 この様な電荷発生層ど市.荷幅送局の積層構造からなる
感光層は、4電層を有する基体の上に設けられる。4 
iM.層を有する基体としては、基体自体が導電性をも
つもの、例えばアルミニウム、アルミニウム合金、銅、
能鉛、ステンレス、バナジウム、モリブデン、クロム、
チタン、ニッケル、インジウム、金や白金などを用いる
ことができ、その他にアルミニウム、アルミニウム合金
、酸化インジウム、酸化錫、酸化インジウム−酸化錫合
金などを真空蒸着法によって破膜形成された層を不する
プラスチック(例えばポリエチレン、ポリプロピレン、
ポリ塩化ビニル、ポリエチレンテレフタレート、アクリ
ル樹脂、ポリフッ化エチレンなど)、4電性粒子(例え
は、カーボンブラック、銀粒子など)を適当なバインダ
ーとともにプラスチックの一ヒに被覆し〆こ基体、導管
性粒子をプラスチックや紙に含浸した基体や導電性ポリ
マーを有するプラスチックなどを用いることができ゛る
。 導′市層と感光層の中間に、バリヤー+&iil:と接
着イ幾能ケも一つ下引層を設けることもできる。F別層
(li、カゼイン、ポリビニルアルコール、ニトロセル
ロース、エチレン−アクリル酸コポリマー、ポリーrミ
ド(ノーイロン6、ナイロン66。 ナイロン610,共重合ナイロン、アルコキシメチル化
ナイロンなど)、ポリウレタン、ゼラチン、1液化アル
ミニウムなどしこよって形成できる。 下引層の膜厚e」、、0.1ミクロン〜5ミクロン、好
祉しくは0. 5ミクロン〜3ミクロンがJL 当?’
ある。 41托層、 ′小,イd了元生1(至)、 ′「にイ;
i丁中翁送局の111に績j苗した感光体を使用する場
合に↓?いて電荷輸送物賃が;b,子輸送住物質からな
るときは、重荷!li*ii送層表1川金正に帯電する
必装があり、帝王後露光すると露光部では′14+,荷
発生層において生成した東予が′市りn′ffi輸送層
にtL人され、そのあと表面に達して正電荷を中和1,
、表!MI IlF,位の減Iが牛[〕未4.1K)l
(:部との同に1jp 7f;コントラストが牛し−〈
、1、(−の(ぐ(・(てt−、−rでさ/? !ii
′弓11′、沿1゛(6−自、荷箱1件のトナーで現像
ずれば111幌” −b< :(H4らJl、る。これ
ケ直1メ定石−4−ろか、ある(・肩−1トナー像を紙
やプラスチックフィルム1−に転!J後、現像し′ji
でイ、ニーtろことがでへる。 1プこ、感ν(7体上の静1(1、潜像を111八与紙
の絶縁層に(・C・朴・、写(ρ11) +象12、定
a−tろ方法もとれる。現区ハ11の(□!1.1′1
や現1室方法、714着方法は公1.11のものぐ・公
l引の万l去のいJ″′′オL用しても良く、l時定の
ものに限・(ぎ7\工1.イ)ものでd、ない。 −万、電荷輪;、= 4グ賀がtE孔輸送肪す□t(か
ら成る場汀、・i−+’、φ+F i’ilN込八Nj
表へを頁に帯市7する必要が60、帯141、後、尭>
’eするとD’g牟部では市荷弁、生層に↓、+ 1.
4で生成1.だ中孔か′屯イ釘輪1号層に注入さすし、
子のfを衣rliiに達(2−て直市荷令:中々kl 
L、表面′市1位の減b(が牛し未I落光部との111
1に静′C14、コン[・ラストが牛しる、現1φ時に
l1t(+、子J陥送物貿を甲い/こ出合と(li萌i
/こIE電荷性トナーを用いろ心安がある。 斗lで、本:′JI′、明のン用の扶イ本1q1しr 
(ll、萌(ji<の+= l・ラゾン/L(」、しで
パラゾリン夫11.4キリーノ゛−ル用、Lアゾール1
[1、トリアリールメタンi、1j、ポリ1′リールア
ルブlン”ljj、hlJフエw ルア ミy 、ホ”
) −N−ビニル力・“レバン゛−ル類冷′とイ1,1
・Jlをイニト、す: ’fi:性!1力負や1−β化
11丘鉛、イ1府化カドミウl3、)ニレン々どの、1
Jjli機尤ノj:f、 71.;性私Jダ′↓の」“
11感ハリとし2で111[ボσ)ノノーニーン化含′
向て含有σぜた有(りゆ彼1i1:+とすイ3cmとが
(き/)。コノ有4凌41i21i’zs izl:、
コitら(1) 光1’X l¥+’、 fl′I’a
 ’iTと1ii+ ;・1(の化合物ケバインターと
とも(′(−塗[−fil′よって供膜形成さit ;
3゜また、別の具体4<−1−1でシ、1、前・ボのン
アニン化打物を含有する44 世+1・′:!ip;;
乞゛感元・、゛・νとし−C用いゐことがでへろ。 い)4れの7向)し体におい−Cも、1)1いZ)fに
告+γツノ6.1一般式(1)でノJ、される叱合′吻
か亡〕尤(・+b、x:才り、’X、/シfr くとも
1惺)」゛1奢゛α−G、i”t、、、、心安(でI(
4、じ“i”’ 、)Y、吸収の道17+″ イ)弓ダ
i  、ti  i:  、i、II  負 1j二 
−で゛ I史 月1 し ノ穎イ1)七 斤、1本 の
 4□t& fJj  を−+j−、’1−’J)7に
〇、バンクロー1チツクなII< 斤’、 1本31〜
イ:’l 411 Jb。 のL1的チ一般式11) T /Jk ’t\7L/)
化’r置1’、ZJ f 2 神V、+’+ l゛、J
ヒ絹含ぜ/ζす、斗たd公り、11の吟・イ、[、f2
11ネ1から、″)gばれた市、萌発生物質と組合せて
使用することも用能である。 本発明の有機被膜d2、前述の光ディスク西己録体や′
1トを写↓′を感光体のレーザ感応被膜としてJ旧いる
他に、赤外線カットフィルター、太陽’ttf、Mある
いは光センサーなどにも用いることカニできる。太陽電
池は、例えば酸化インジウノ、とアルシ全二極ム全市極
として、こJlらの間にi’if1 述の有機被膜をサ
ンドイッチ構遺とするととQこよつ−C調製できる。 本発明の有機被膜は、従来のl/−ザ用電子写真感光体
と比較して75Qnrn以上の波長域で皆し7く高感度
とすることができ、また従来C)尤ディスク記録体と比
較(〜ても高感度でしかも十分に改善されたS/N叱を
与えることp;できる。 さらに、本発明で用いる化合物tま、750nm以−1
二に吸収ピークを有しているにもかかわらず、熱に対(
〜で極めて安定している利点をイ■している。 以下、本発明を実施例に1r’i−って説明する。 実施例1 アルミニウムシリノダー上にカゼインのアンモニア水溶
液(カゼイン]L、2g、28’/  アンーモニア水
1g、水222 d )を浸漬コーディング法で塗」二
[7、乾燥して塗工’r4f 1. Og / +r?
  のド錆層全形成した。 次に、前述の化合物Afllのジノ゛ニン化イ)物1屯
l讐14部とフ゛チラール神、111旨(ニスしノック
13 M−2=積水化学は局製)]屯置部とテトラヒト
11フラン30重量部をボールミル分M機で4 u;7
間分11t1−7だ。この分散液を先に形成[7たl・
−錆層の1−に浸漬コーティング法で塗工(7、乾燥り
、 (l ttC荷り0本層を形成[7た。この時の1
拓゛4厚は(13ttであった。 次に、P−ジエチルアミノベンズアルデヒド−N−フェ
ニル−N−α−ナフチルヒドラゾン1重1け部、ポリス
ルホン樹脂(P1700 : −””オンカーバイド社
製、1重h1部とモノク「2ルベンゼン6 、ME +
に部を混合17、攪拌機で攪拌溶解シー2だ。この液を
電荷発生層の十に浸tδコーテイング法で塗工じ、乾燥
して重荷輸送層を形成した。 この時の膜(すは、12μであった。 こう[〜で;調製した感光体に−5い1のコロナ族’¥
Fi、を行な′つた。この時の表面出′1位を4111
定した(初期?l−m (X′rVo ) oさらに、
tの感光体を5秒間暗所で故直し、た後の表面電位を+
tttl定した(階減哀V、)。感度t:1、Ifθ・
り哀した後の電位■、を%にδJく良−′il−るに必
迎なW<光量(EL場マイクし1ジユール/ c、、り
を測定することによって謹・V価し7た。この際、光ン
1皇と(2てガリウム、アルミニウム・ヒ素半導体レー
ザー(免振波長780旧Tl )を用いた。とノ′1ら
の結果は、次のきおりであった。 Vo  :  −620ボルト V5  :    580ホルト b!/2”、  8.5マイクロジュール/、、、I実
施例2〜17 ガ施1+lI 1で用いた化合物A(+1の化イr物に
代えて、第1表に示す化合物をそれぞI1用いたほかは
、実施例1と全く同様の方法で感光体をへ周製17、こ
の感光体の特性を測定17た。これらの結果2第1表に
示す。 4ル l 表 2   化合物tb(刀   −570〜51(125
,03〃(3+   −570−5(+(17,84〃
(4)    590 −54(110,55〃  (
5)  −58(1−5:30+44+6    〃f
6)   〜600 −550   9.87    
n   (71580−5209,(’)3    u
   (8)   −56(>  −52017,59
〃(9)   −570−52011,31,0”  
 (1,0)   −610−550+5(111n 
  u+)   −590〜550   9.412 
   ”   (12)   −570−5:30  
22.013    N   (13)   −560
−51029,414”   (I4)   −570
−5]−013,515”   (151−590−5
708,516に  (161−58(1−5:)、(
1] 6.417    ”   (I7]    5
50 −500  33.0実施例18 厚さ100ミクロン厚のアルミ板上にカゼインのアンモ
ニア水浴液を塗布し、乾燥し7て膜厚11ミクロンの下
引1→を形成し7た。 次eこ、2.4.7−ドリニトロー9−フルオレノ75
gとポリ−N−ビニルカルバソー ル(数4均分子量3
00,000)5 g  をテトラヒドロフラン70 
ml V、溶かしで1(工性移動錯化合物を形成した。 この電(W丁移動錯化合物と前述の化合物46mの化合
物1gをポリエステル樹脂(バイロン:東洋紡製)5g
をテトラヒドロフラン70.dにγ4かし/と液に)J
IJえ、分散した。この分散液をF錆層の上に乾燥後の
膜厚が12ミク1コンとなる44に塗イ]i(7、乾燥
した。 て こう(2へ調製L7た感光体の帯7M特性を実施例1と
同様の方法で測定し7た。これの結果は、次のと、t、
?りであった。但し、帯1E極性1・」、(→とした。 Vo  :  m550ボルト V、  :  e1490ポルト ド〕!≦ : 485マイクロジユ一ル/c+イ実施例
19 アルミ蒸着ポリエチレンプレフタl/−)フィルムのア
ルミ面上に膜厚11ミクロンのポリビニルアルコールの
被膜を形成1.り。 次に、実施例工で用いた前1ポの化合物□/6(1)の
化合物の分散液を先に形成したポリビニルアルコール層
の−にに、乾燥後の膜厚か05ミクロンとなる様VCマ
イヤーバーで塗布し、乾炒・し−C山1荷冗生j−を形
成し7た。 次に、構造式 のビラソ゛リン化合十7A5gとポリアリL/l” +
’lJ 1lrr(ビスフェノールAとプレフタル酸 
−fソフ・タル1俄の縮寸合体)5gをテトラヒドロフ
ラン70m1に溶かし7た液を電1’j7発生層の七に
乾燥後の力か厚が10ミクTffンとなる様に塗布U、
’i・シ:)端してン程荷輸送層を形成した。 こうしてril’fl製した感九体の帯ta tF4¥
性全実施列1と同様の方法によって測定した。こ−11
の結果は、次のと秒りであった。 Vo  :   −580ボルト V、  :   −520ボルト E% :   10.5  マイクロジュール/rJ前
述の各実施例から1」るとおり、本発明の?ト。 子Ij真感メL:体は、750 n m以上の波長域で
著しい高感度!1!U性を有するとともに、イ〃期11
,5位や暗減衰などの・1ト屯待件11こ;愛れている
。 実〃゛市1タリ 2 〇 ニトロセルロース溶液(ダイセル化学]Z L <4i
e製;オーハーレスラッカー二ニトロセルロース25市
i、l %のメチルエチルケトンiWり12重H6′、
;(+、、AiJ 1ホの化合物、1f;(1)の化合
物3重ψ部およびメサルエチルケトン7゛0市皐二部を
混合し、−(−分Vこ分散し7た。この分散液全アルミ
蒸肴ガラス& 、I VC&漬コーティング法により塗
布l〜だ後、乾燥して0.6g/m”の記録層を得た。 こうして作成したア0テイスク記録体をター/テーブル
上に取りイ;]け、ター/テーブル上をモータでl 8
00 rpmの回転を与えながら、ス7ドットザイズ】
、、Oミクロンに集束した5 rnWおよび4illl
zのガリウムーアルミニウムーヒ素半導体レーザ(発振
波長78011n))を記録層1イ0こトラック状で照
射して記録を71なった。 この記録された光ディスクの表面を4゛査ta1ノ゛(
]i子)用微錘で観察したところ、1昨明なビツト力≦
M?められだ。まだ、この尤ディスクに低出力のガリウ
ムーアルミニウムーヒ索半η゛h体し−リ“を入射し2
、反射光の検知を行なつ/こところ、十分なS/N比を
有する波形が得られた。 実施例21 前述の化合物、%(])の化合物50()η全蒸着j)
1モリブデンボートに入れ、i x io朋Hy以F(
/こ排気した後、アルミ蒸着ガラス仮に族71′讐し/
こ。 蒸々4中は亘空室内の圧力がI O−’lffm H7
以以上 、、)−、?1しない様にヒーターを□制御し
7ながら、02ミクロンの蒸着膜ゲ形成させた。 こうし2で作成した光デイスク記録体に実施例20と同
様の方法で1′l′f報を記憶させたところ、実施例2
0と同様の鮮明なビットが認められ、まだ実施例20と
同様の方法で情報を再生したが、この際十分なS/N比
を有する波形が認められた。 実施例22 前述の化合物ぷ(5)の化合物全実施例20と同様の方
法でアルミ蒸有ガラス板の上に塗工して、乾燥塗工do
、6y/iの記録層を有するW;ディスク記録体を作成
し7た。 この尤ディスク記録体に実施例20と同様の方法で1青
報を記憶させてから、内生じたところ、十分なS/N比
全櫓する波形が認められた。又、情報を得き込みした後
の記録層面を走査型電子顕微鏡で観祭し/こところ、鮮
明なビットが形成されてい/こ。 実施例23 [11■述の化合物・1f;(8)の化合物を実施1+
IJ 20と同様の方法でアルミ蒸着ガラス仮の上に塗
工して、乾燥塗工量0.6 y/ ダイの記録層を有す
る尤ディスク配録体を作成した。 この光デイスク記録体に実姉例20と同様の方法で情報
を記憶させてから、再生し7たところ、十分なSlN比
を有する波形が認められ/こ。父、情報を一耳き込みし
た後の配録層面シ〔走査型電子顕微鏡で覗察しだところ
、餠明なビットが形成されていた。 実施例24 前述の化合物A(14)の化合物を実施例20 、!二
同様の方法でアルミ蒸着ガラス仮の」二に塗工(7て、
乾燥くf]二1−IlO65Y / n?の記録j¥【
)領イ]する光ディスク6己録体を作成した。 この光ディスク1.1シ録体に実施例20と同様の方法
ですへ報を記憶させてから、11f生(−だところ、十
分なS/N比を有する波形が認めらJ+りこ。又、情報
を1き込み[また後のべ[、!録IC4曲全走I!r型
市f−顧微鏡でI’i滉察したところ、鮮明なビットか
形成されていた。
【two. It can be used for whitening, whitening, etc., such as polyethylene, chlorinated polyethylene 7T, etc. [Organic foil cutting that can be used for festivals J41] When applying binder A (class 11 or previous +% compound) to binder ``1 bow C included'', fractional 1δI and -] or i:l non-product'h-like j?smell and 1'crab'2 are different, but -WZ f is used for alcohol such as methanol, ethanol, isozolopanol, '7 Chthone, mecal ethyl ketone, cyclohexanone, N,
N--dimer f-form 11 amide, i4. N-dimenaracetamide, etc. -rmido river, dimer f-rusulbogicide, etc.
Ethers such as Noran', Cyogylline, ethylene glycol 11 methyl ether, -V-sulfurs such as methyl acetate, ethyl acetate, and butyl acetate, gloroporum, methylone tetrachloride, and cyclo-L1 aliphatic halogenated stratified hydrogens such as carbon tetrachloride, trichlorethylene, benzene, toluene, cylene,
Aromatic groups J, q, etc. such as ligroin, monochlorobenzene, dichlorobenzene, etc. can be used. Coating & J: Can be carried out using coating methods such as i-2 dip coving method, spray coating method, spinner coating method, bead coating method, Mayer bar coating method, blade coating method, roller coating method, curtain coating method, etc. can. When forming the 41 film 2 together with the binder, the cyaninated material 11 is
-, rJCK. Sir, 41 aircraft membrane rupture 2 drying I1
The thickness (or vapor thickness) is less than 10 ζ microns, preferably less than 2 microns. 17; As IJil! Plastics such as Zli2, polyester, acrylic resin, polyolefin resin, phenol resin, epoxy resin, polyamide, polyimide, glass, or gold L (Ii class) can be used. As shown in Figure 2, a reflective layer 3 is provided between the substrate 1 and the organic coating 20. It can be combined with a vapor-deposited layer of gold maple or a non-laminated layer.
A hit 5 can be formed by the irradiation flC of the ζ/ζ laser likelihood line 4. bit 5 depth organic al I
If the llf and lI thickness of Iψ2 are made the same, the pit gt
It is possible to increase the reflectance by 1-, - in the range <>. +tW protrusion [1 when 7. The growth of the laser beam and the laser beam used for incorporation is shown in Figure 1. However, using a small laser beam with a small intensity fj, fj, tY; However, the non-pit region (〆coi-rfd is absorbed.-mafC) Another method is to perform real-time pre-implantation with the first laser beam absorbed by the organic film 2, The method of reading (-7) is to use a laser beam between the second waves that substantially transmits through the coating 2; It is possible to respond to the change in the reflection phase caused by the change in reflection phase.
880m), helium-neon laser (oscillation i(+
633 nm), recording by gas radar irradiation such as helium-cadmium laser (oscillation wavelength 4420 m) is also a technique, but preferably 12 < is 750 nm.
Lasers with wavelengths longer than nm;
The near-infrared or infrared region (by irradiation with a laser beam with a wavelength of
l, the aforementioned laser)'f: #i! can be used. This process, loading and reading can be performed with a laser of a different wavelength, or can be performed with a laser of a different wavelength. Another specific example of Mikagemei is 1, which can be used as a photosensitive layer for electronic photography and 9 bodies. However, such a photosensitive layer can be functionally separated into a charge generation layer and a charge transport layer.
! 1. It can also be applied to the photoreceptor in one layer and one layer. city; load generation layer &t, (-' minute absorption-1c: YN-
'+! +2) In order to contain as many of the above-mentioned cyanide compounds as possible, and to keep the range of the generated mold surface carriers as short as possible, a thin film layer, e.g. It is preferable to use a thin film layer with a thickness of 0.01 to 1 micron. This thing C
2. The part of the incident light +44H is 'fli', which is absorbed by the redundant layer and generates a lot of Tl (and 5i' carriers). Recombining N・capturing (trap)(・without losing (predicting) °'small, I; The green layer can be formed by diluting the Cyan compound of A'lt'ls with a suitable f(binder Q) for one minute and coating it on the substrate 1-, and A vapor-deposited film can be formed by vacuum deposition ν 200 and V 6). 1j By using the vine binder and L7 used when forming the evaporated film from 6 wide'-c' ???
Eyes! 1fjj, j4-insulating 4+14 resins, DOU/V poly-N-biyl; organic photoconductive materials such as lucarbazole, polyvinylanthracene and polyvinylpyrene;
You can choose from a variety of polymers. Good size, polyvinyl butyral, polyester (bisphenol, A/A
and phthalic acid condensation polymers, polycarbonate-1, polyester, phenoxy resin, polyvinyl acetate, acrylic resin, polyacrylamide resin, polyamide, Boribi J
Niruhinojin, cellulose resin, methane fat,
Examples include insulating resins such as ebony resin, casein, polyvinyl alcohol, and polyvinylpyrrolidone. Charge ``V in the Ryusei layer (-411.1 fat ti
, below 80%μ, preferably i):l 40140i
Over ゛%゛ are monks. The Z1 solvent that dissolves these resins varies depending on the type of resin, and the Z1 solvent that dissolves the above-mentioned charge transport layer and F-side layer [2]
It is preferable to select from those that do not have any. Specific organic solvents include methanol, ethanol, isopro-(
r-nodocols such as Mer, ketones such as acetone, methinodoethyl ketone, cyclohexanone, 14, N,
N-dimethylformamide, N,N-dimethylani7adamide, other amides, sulfoxides such as dimethylsulfoginde, ethers such as tetrahydrolane, dioquinane, ethylene glycol monomethyl ether, If'lE+ ``esters such as methyl and acetic acid, chloroformo 1, methylene, dichloroethylene, carbon tetrachloride) 17 aliphatic halogenated hydrocarbons such as ethylene, benzene, etc. , Toluene, Kinshimen, Ligroin, Monochlorobenzene, Dichlorobenzene I Depends on which aromatic group it is in.
-Niryo-teing method, Subinner Koj-I/G θ2,
Bead coach ink rll ha Meyer Burny 1-D/G method, Pt node coating method, [''-Rah-J
-i-ing method, Cunydenkote-Ingua f,
H can be used in the 21-ting method. φ: Drying (1, Murosho V (after drying to the touch, heat drying)
I don't like the h method. Power IJ heat dry smoke, 30℃ ~ 200℃
'C's 1 island and 5 minutes to 2 hours of Han 1 river till',
It can be carried out between ', static + I-1 r/, i, and under ventilation. It is electrically connected to the charge generation layer, and receives and takes charge carriers transferred from the charge generation layer in the presence of an electric field.
It has the ability to transport these 'heavy carriers' to the surface. At this time, this charge transport layer may be layered on top of the charge generation layer or may be layered on the bottom of the layer. [tl]]7 cities, freight transport bureaus
It is desirable that the material is layered on the soil of the load generation layer. The substance that transports all of the charge carriers in the charge transport layer (hereinafter simply referred to as i, charge transport material) is the above-mentioned charge carrier (Wr
Preferably, the material 9 is also substantially insensitive to the range of electromagnetic waves to which the living layer is sensitive. The "electromagnetic waves" referred to here are r
Includes a broad definition of "rays" that includes rays, X-rays, ultraviolet rays, ``rays'', near-infrared rays, infrared rays, far-infrared rays, etc. When the photosensitive wavelength range of the charge transport layer coincides with or overlaps that of charge generation j@, generation occurs in both]-
However, the charge carriers trap each other, resulting in a decrease in sensitivity. In the charge transport substance and E~, there is a ``child transport'' with the subject substance (IF), and there is an electron transport substance t4, chrono-1-anyl, bromoanil, detracyanoethylene,
Tetracyanoquinodimethane, 2,4.7-dolinitro-9-flumerenone, 2.4.5.7-tetranitro-
9-Fluorenone, 2.4.7-) Rinitro! (-dicyanomethy1/fluorenone, 2, 4., 5.7-titranitroxantrinitrodiogizanton TI of tatami)
, polymerization of child-attracting substances and these electron-attracting substances 1-7
There is Rikomo's residence. +JE pore-transporting substances tEi include pyrene, N-ethylcarbazole, N-inzolovyl-ruvasol, N-tanal-N-phenylhydrazino-3-methylythene-9
-Ethylcarbazole, N,N-diphenylhydrazole: U-methylidene- 9-Ethylcarbazole, N
, N-sifgonylhydrazino-3-methylidene~l
(+-Ethylnoenothiazine, N,N-diphenylhydrazino-3-methylidene-1()-ethylphenoxazine, P-diethylaminostyryldehyl'-1, N-
Diphenylhydrazone, P-diethylaminobenzaldehyde-N-α naphthalene-N-phenylhydrazone, P-bicolidinobenzaldehyde-N,N-
Diphenylhydrazone, 1. , 3. 3-Trimethylindolenine-aldehyde-N,N-diphenylhydrazone l)-Hydrazones such as diethylbenzaldehyde-3-methylbenzthiazo 1nonone-2-hydrazone, 2,5-bis(P-diethylaminophenyl) −
1. 3. 4-Ogisadiazole, 1-phenyl-3-(P-diethylaminostyryl)-5~(P
-diethylamine phenyl)pyrazoline, 1. -[quinolyl(21)]-3-(P-diethylaminostyryl)-5-(P-diethylaminophenyl)pyrazoline, i-(pyridyl(2)]-3-(P-
diethylaminostyryl)-5-(P-diethylaminophenyl)pyrazoline, l-[6-medoxybilidyl(2+]-3-(1)-diethyl "aminostyryl)-5-(P-9ethylaminophenyl) Pyrazoline, 1-[pyridyl (3
)]-:3-(P-diethylaminostyryl)~5
~(P~diethylaminophenyl)pyrazoline, i. −
(Levidyl f2+ 1-3-(P-diethylaminostyryl)-5-(P-diethylaminophenyl)pyrazoline, 1-[pyridyl(2+ LL-
3~(P-diethylaminostyryl)-4-methyl~
5-(II'-diethylaminophenyl)pyrazoline, x-r)pyridyl(21]-3-(α-methyl-
P ~ diethylaminostyryl) -, -5 - (
P-diethylaminostyryl)-pyrazoline, -phenyl-3-(P-diethylaminostyryl)-4-methyl-5(p)ethylaminophenyl)pyrazoline, 1-
Phenyl-3-(α-benzyl-P-diethylaminostyryl)-5-(P-diethylaminophenyl)
Pyrazolines such as pyrazoline and spiropyrazoline, 2
-(IJ-diethylaminostyryl)-6-jethylaminobenzoosasol, 2-(P-shetylaminophyl)-4-(p-dimethylaminophenyl)
-Oxazole compounds such as 5-(2-chlorophenyl)oxazole, thiazole compounds such as 2-, (P-diethylaminostyryl)-6-dinithylaminobenzothiazole, bis(4-diethylamine-2-methylphenyl)- Triarylmethane compounds such as phenylmethane, ■, 1-bis(4-N, N-diethylamino-2
-methylphenyl)hebutane, 1,1,2,2-te]・
Lakis(4-,-N,N-1-dimethylamine-2-methylphenyl)ethane Valley polyarylalkane, triphenylamine, poly-N-vinylcarbazole, polyvinylpyrene, polyvinylanthracene, polyvinylacridine, poly- 9-vinylphenylanthracene,
pyrene-pormaldehyde resin, ethyl carbazole formaldehyde resin, etc. In addition to these organic charge transport materials, inorganic materials such as selenium, selenium-tellurium amorphous silicon, and cadmium can also be used. , these mountains: Cf1iii1mX !lNaguga,
111/ko can be used in combination of two or more. Can be formed. Resins that can be used as binders include, for example, acrylic resins, polyester, polycarbonate, polystyrene, acrylonitrile-butadiene copolymer, acrylonitrile-butadiene copolymer, polyvinyl butyral, polyvinyl formal, polysulpo/, polyacrylamide, polyamide, Insulation such as chlorinated rubber (, + l- resin, or j-
Examples include highly versatile polymers such as polyN-hinylcarbazole, polyvinyla/thracene, and polyvinylpyrene. 714', load width + A 1m I/': l, 'I
K (fif 4 yari)” lti.ii
a) Since there is a pie field, the film Il# cannot be made thicker than necessary. Generally fl:
i, 5 microns to 30 microns, preferably range 1
The size is 8 microns to 20 microns. By applying 'd', load rxi r. (1/17U forming the circumference)
Any suitable coating method such as those described above may be used. Such a charge generation layer. A photosensitive layer having a laminated structure of a load transfer station is provided on a substrate having a four-electrode layer. 4
iM. The substrate having a layer may be one in which the substrate itself is conductive, such as aluminum, aluminum alloy, copper,
lead, stainless steel, vanadium, molybdenum, chromium,
Titanium, nickel, indium, gold, platinum, etc. can be used, and in addition, aluminum, aluminum alloy, indium oxide, tin oxide, indium oxide-tin oxide alloy, etc. can be used to prevent the layer formed by the vacuum evaporation method. Plastics (e.g. polyethylene, polypropylene,
Polyvinyl chloride, polyethylene terephthalate, acrylic resin, polyfluorinated ethylene, etc.), tetraelectric particles (e.g. carbon black, silver particles, etc.) are coated on a piece of plastic together with a suitable binder, and then the substrate and conduit particles are coated. It is possible to use a substrate made of plastic or paper impregnated with a substance or a plastic containing a conductive polymer. A barrier layer and a subbing layer may be provided between the conductive layer and the photosensitive layer. F separate layer (li, casein, polyvinyl alcohol, nitrocellulose, ethylene-acrylic acid copolymer, polyramide (norylon 6, nylon 66, nylon 610, copolymerized nylon, alkoxymethylated nylon, etc.), polyurethane, gelatin, 1-component The film thickness of the undercoat layer is 0.1 to 5 microns, preferably 0.5 to 3 microns.
be. 41 layers, 'small, idling original life 1 (to), 'nii;
What if I use a photoreceptor that has been installed on 111 of the I-cho Chuo transmission station? When the charge transport material consists of a child transport substance, it is a burden! li*ii Transport layer Table 1 There is a necessary charge to the river Kinmasa, and when it is exposed after the emperor, it is '14+ in the exposed part, the Toyo generated in the charge generation layer is transferred to the transport layer, and then Neutralizes positive charges by reaching the surface1,
,table! MI IIF, decrease I is a cow [] not 4.1K)l
(: same as part 1jp 7f; contrast is cow-<
, 1, (-no(gu(・(tet-,-r de sa/? !ii
'Bow 11', along 1゛ (6-self, 111 hoods if developed with one packing box of toner) -b<: (H4 et al.・Transfer the shoulder-1 toner image onto paper or plastic film 1-!J, then develop it.
So, I can speak the knee. 1 puko, impression ν (7 objects, static 1 (1, latent image on 1118 paper insulating layer (・C・Pak・, copy (ρ11) + elephant 12, constant a-t method can also be used .Currently Ward Ha11 (□!1.1'1
The current 1st room method and the 714th method may be used for public 1.11 and public withdrawal. \Work 1. A) It is not d. - 10,000, charge ring;, = 4g is a field consisting of tE pore transport fat □t (, ・i-+', φ+F i'ilN including 8Nj
60, 141, 7, 7, 60, 141, 7
If 'e, then D'g Mube will have Ichigoben, ↓, + 1.
Generated with 4 1. It is injected into the 1st layer of the hollow hole,
The child's f reached the clothes rlii (2-te direct market delivery order: Nakakkl
L, surface 'city's 1st place decrease b (111 with Gushishi still I falling light section)
In 1, Shizu'C14, Con[・Last is Ushishiru, at the current 1φ time l1t (+, child J consignment trade is / Kodeai and (li Moei
/It is safe to use IE chargeable toner. Book: 'JI', Book 1q1 for the Ming Dynasty
(ll, moe (ji<'s += l・razon/L('', parazolin husband 11.4 for Kirinol, L azole 1
[1, triarylmethane i, 1j, poly 1′
) -N-Vinyl force/“Level cold” and I1,1
・Initiate Jl: 'fi: Sex! 1 force negative, 1-β 11 hill lead, 1 fuka cadmium l3,) Niren etc., 1
Jjli 机尤ノj:f, 71. ;Sex I J da′↓”“
11 feels firm and 2 contains 111 [Boσ) non-neen conversion'
Contains σ and has (riyu he 1i1: + and i 3cm (ki/). Kono Yu 4 ryo 41i21i'zs izl:,
Koit et al. (1) Light 1'X l\+', fl'I'a
'iT and 1ii+;・1('s compound kebainter and ('(- coating [-fil') form a film;
3゜Also, another concrete 4<-1-1 contains shi, 1, front and bo's n-aninized batters, 44th +1・':! ip;;
It would be possible to use -C as the source of the impression. i) 4 of 7 directions) and body smell - C, 1) 1 Z) notification to f + γ horn 6.1 In general formula (1), ノJ, scolding' proboscis or death] 尤(・+b, x: talent, 'X, / Shifr Kudomo 1 惺)''
4, Ji "i"',) Y, path of absorption 17+" a) Yumida i, ti i: , i, II negative 1j two
- in ゛ I History Month 1 Shino Ai 1) 7 catties, 1 book of 4□t & fJj - + j-, '1 -' J) 7, bank low 1 tick II <catty', 1 book 31 ~
I:'l 411 Jb. L1 general formula 11) T /Jk 't\7L/)
Convert 'r 1', ZJ f 2 God V, +'+ l゛, J
Hikin included/ζsu, Dota d Kori, 11 no Gin・i, [, f2
11, 1, ``)'') It is also possible to use it in combination with a substance that causes sprouting.
In addition to being used as a laser-sensitive coating on a photoreceptor, it can also be used for infrared cut filters, solar sensors, light sensors, etc. A solar cell can be prepared, for example, by sandwiching the organic film described above between indium oxide and alkyl dipoles and the organic film described above. The organic coating of the present invention can achieve higher sensitivity in the wavelength range of 75Qnrn or more compared to conventional electrophotographic photoreceptors for l/- laser, and compared to conventional C) Y disk recording materials. (It is possible to provide a sufficiently improved S/N ratio with high sensitivity even if the compound is used in the present invention.
Despite having an absorption peak at
It has the advantage of being extremely stable. Hereinafter, the present invention will be explained with reference to Examples. Example 1 An ammonia aqueous solution of casein (Casein L, 2 g, 28' / ammonia water 1 g, water 222 d) was coated on an aluminum cylinoder by dip coating method. Og/+r?
A complete rust layer was formed. Next, 1 ton of the above-mentioned compound Afll, 14 parts of the compound, 111 parts of the compound Afll (varnished knock 13 M-2 = locally produced by Sekisui Chemical)] and 11 francs of tetrahedral. 30 parts by weight was milled into a ball mill using a M machine for 4 u; 7
The interval is 11t1-7. This dispersion was first formed [7 liters]
-Apply on rust layer 1- by dip coating method (7, dry, form 0 layer of (l ttC) [7. At this time 1
The thickness of the tube 4 was (13 tt).Next, 1 part of P-diethylaminobenzaldehyde-N-phenyl-N-α-naphthylhydrazone, 1 part of polysulfone resin (P1700: - manufactured by On Carbide, 1 part of h1 part and monoku ``2 rubenzene 6, ME +
Mix 17 parts and stir with a stirrer to dissolve 2 parts. This liquid was applied to the charge generation layer by the tδ coating method and dried to form a heavy transport layer. At this time, the film thickness was 12μ.
I did Fi. The surface level at this time is 4111
(Initial?l-m (X'rVo)
The photoconductor of t was repaired in the dark for 5 seconds, and then the surface potential was +
tttl has been established (grade reduction ai V,). Sensitivity t: 1, Ifθ・
By measuring the potential W < light intensity (1 joule/c, 1 joule/c, and At this time, a gallium, aluminum arsenide semiconductor laser (isolation wavelength 780 former Tl) was used.The results of Tono'1 et al. were as follows.Vo: -620 volts V5: 580 volts b!/2", 8.5 microjoules/,,I Examples 2 to 17 Compound A used in 1 A photoreceptor was prepared in exactly the same manner as in Example 1, except that each of the compounds shown in the table was used, and the characteristics of this photoreceptor were measured.The results are shown in Table 1. 4 l Table 2 Compound tb (sword -570 to 51 (125
,03〃(3+ -570-5(+(17,84〃
(4) 590 -54 (110,55〃 (
5) -58 (1-5:30+44+6 〃f
6) ~600 -550 9.87
n (71580-5209, (')3 u
(8) −56(> −52017,59
〃(9) -570-52011,31,0”
(1,0) -610-550+5(111n
u+) -590~550 9.412
” (12) -570-5:30
22.013 N (13) -560
-51029,414" (I4) -570
-5]-013,515” (151-590-5
708,516 (161-58(1-5:), (
1] 6.417” (I7] 5
50 -500 33.0 Example 18 An ammonia water bath solution of casein was applied onto an aluminum plate with a thickness of 100 microns, and dried to form a sublayer 1→ with a thickness of 11 microns. Next eko, 2.4.7-dolinitro9-fluoreno75
g and poly-N-vinylcarbasol (number 4 average molecular weight 3
00,000) 5 g of tetrahydrofuran 70
ml V, to form an engineered transfer complex compound. 1 g of the compound of this transfer complex compound and the above-mentioned compound 46m was added to 5 g of polyester resin (Vylon: manufactured by Toyobo).
and tetrahydrofuran 70. d to γ4 and liquid) J
IJ, it's dispersed. This dispersion was applied onto the F rust layer to give a film thickness of 12 mm after drying. Measurements were made in the same manner as in Example 1.The results were as follows:
? It was ri. However, band 1E polarity 1.'', (→.Vo: m550 volts V,: e1490 ports)!≦: 485 micro unit/c+i Example 19 Aluminum evaporated polyethylene prephthalate l/-) Aluminum surface of film 1. Forming a polyvinyl alcohol film with a thickness of 11 microns on top. the law of nature. Next, a dispersion of the compound □/6 (1) used in the example process was applied to the polyvinyl alcohol layer formed earlier using VC so that the film thickness after drying was 0.5 microns. It was coated with a Mayer bar and dry-fried to form a 100% solid layer. Next, 5 g of virasoline compound 17A of the structural formula and polyaryl L/l" +
'lJ 1lrr (bisphenol A and prephthalic acid
Dissolve 5 g of -f Soft Tar 1 in 70 ml of tetrahydrofuran and apply the solution to 7 of the electric generation layer so that the strength or thickness after drying is 10 μTff.
'i・shi:) At the end, a cargo transport layer was formed. This is how ril'fl made Kankyutai obi ta tF4¥
All genders were measured by the same method as in Example 1. Ko-11
The results were as follows. Vo: -580 volts V: -520 volts E%: 10.5 microjoules/rJ As per each of the above-mentioned embodiments, the present invention's ? to. Child Ij Shinkanme L: The body is extremely sensitive in the wavelength range of 750 nm or more! 1! In addition to having U-character,
, 5th place, dark decay, etc. 1st place waiting case 11; I love you. Mi゛ichi 1tari 2 〇Nitrocellulose solution (Daicel Chemical) Z L <4i
Made by Ohares Lacquer Nitrocellulose 25% i, l % methyl ethyl ketone iW 12x H6';
(+,, AiJ 1) Compound 1f; 3 parts ψ of the compound (1) and 70 parts 2 parts of mesalethyl ketone were mixed, and -(- part V was dispersed. The dispersion was coated on an all-aluminum vaporized glass, IVC, and dip coating method, and then dried to obtain a recording layer of 0.6 g/m''. 8. Take it on the table with a motor.
7 dot size while applying rotation of 00 rpm]
,,5 rnW and 4 illll focused to O micron
The recording layer was irradiated with a gallium-aluminum-arsenic semiconductor laser (oscillation wavelength: 78011 nm) in the form of a track of 1 and 0, and a recording of 71 was achieved. The surface of this recorded optical disc was scanned 4 times (ta1) (
] When observed with a fine weight, it was found that 1 bright bit force ≦
M? It's mere. Still, a low-power gallium-aluminum fiber half η゛h body was injected into this disk.
By detecting the reflected light, a waveform with a sufficient S/N ratio was obtained. Example 21 Compound 50 ()η total deposition j) of the aforementioned compound, % (])
1Put it in a molybdenum boat,
/After exhausting the air, the aluminum vapor-deposited glass was removed.
child. During steaming 4, the pressure inside the Wataru chamber is I O-'lffm H7
More than that ,,)−,? The heater was controlled □7 so as not to cause a 0.02 micron thick vapor deposited film to form. When the 1'l'f information was stored on the optical disc recording body prepared in the above 2 in the same manner as in Example 20, Example 2
Clear bits similar to 0 were observed, and although information was still reproduced in the same manner as in Example 20, a waveform with a sufficient S/N ratio was observed. Example 22 The above-mentioned compound P(5) was coated on an aluminum vaporized glass plate in the same manner as in Example 20, and then dried and coated.
A W disc recording body having a recording layer of , 6y/i was prepared. After one blue report was recorded on this disc recording medium in the same manner as in Example 20, a waveform with a sufficient S/N ratio was observed. In addition, after the information has been captured, the surface of the recording layer is examined using a scanning electron microscope to see that clear bits have been formed. Example 23 [Compound described in 11■ 1f; Compound (8) was carried out in 1+
This was coated on a temporary aluminum-deposited glass in the same manner as IJ 20 to prepare a disc recording body having a recording layer with a dry coating weight of 0.6 y/die. When information was stored on this optical disc recording medium in the same manner as in Example 20 and then reproduced, a waveform with a sufficient SIN ratio was observed. My father, after listening to the information, looked at the surface of the recording layer using a scanning electron microscope, and found that there were clear bits formed there. Example 24 The above compound A (14) was added to Example 20,! 2) Coat the temporary aluminum-deposited glass in the same manner (7).
Dry f]21-IlO65Y/n? Record of ¥ [
) 6 self-recorded optical discs were created. After storing information on this optical disk 1.1 recording medium in the same manner as in Example 20, a waveform with a sufficient S/N ratio was observed at the 11f raw (-). When I put it in and inspected it with a microscopic mirror, clear bits were formed.

【図面の簡単な説明】[Brief explanation of drawings]

第1図および第2図は、本疵明の有イ幾被膜を光デイス
ク記録体に用いた時の1所面図で、第3図り」このバ菖
fイスク記録体の実施態様を示す説明図である。 1・・・基板、2・・・有機被膜、3・・・反射層、4
・・レーザ光線、5・・ビット 特〔作出^X11人  キャノン株式会社r 、I  
、′ E=!□1 全一タ    ブ     p 第?閉 石3 閉 手続補正書(自発) 特許庁長官 着 杉和 夫  殿 1 事件の表示 昭和58年 特許願  第 2078(S   ぢ2 
発明の名称 有機被膜 33  補正をする者 !Ifイ′1との関係       特許用1幀人イI
 所  東令都入用区F丸f−3−30−25,710
正の対象 明#UI書 6補正の内容 (1)特MF t:l’J求の範囲を別;砥のとおり訂
正する。 (2)明超1明第16貝第19行、2B16頁川20行
、第14頁’>’r 2行、第18頁第6行、具18@
第7行及び第18貞第9行の1−チオ]を[チア」と訂
正する。 (6)同に第39頁第19行の「セレンーデルルアモル
ファスシリコン」ヲ「セ(/ンーテルル、アモルファス
シリコンJとUiEする。 2、1Far’ Jイl’ iimf求の範囲下記一般
式(1)で示される化合物を含有することを特徴どする
有機被膜。 一般式(1) (式中、Zlは置換又は未#゛I−候の含窒素伏毅環を
完成するに必要な原子群を示す。Zzは、置換されても
よいビラン、チアピラン、セレナビラン、ベンビラン、
ベンゾチアピラン、ペンゾセVナビラン、ナフトピラン
、ナフトチアピランスハナフトセレナビランを完成する
に必要な原子群を示し、Xは硫黄原子、1′12素原子
又はセレン原子である。
Figures 1 and 2 are views showing one part of the optical disk recording body when the coating of this invention is used, and Figure 3 is an explanation showing an embodiment of this optical disc recording body. It is a diagram. DESCRIPTION OF SYMBOLS 1... Substrate, 2... Organic film, 3... Reflective layer, 4
... Laser beam, 5... Bit special [Created by ^X11 people Canon Co., Ltd. r, I
,'E=! □1 All tab p th? Closing stone 3 Amendment to closing procedure (voluntary) Commissioner of the Patent Office Kazuo Sugi 1 Display of the case 1982 Patent application No. 2078 (S 2)
Name of the invention Organic coating 33 Person who makes the correction! Relationship with If I'1
Address Higashireito Yoyo Ward F Maru f-3-30-25,710
Positive object clear # UI book 6 amendment contents (1) Special MF t:l'J request range is different; correct as stated. (2) Ming Chao 1 Ming 16 shell line 19, 2B16 page river line 20, page 14 '>'r line 2, page 18 line 6, gu 18@
Correct 1-thio] in line 7 and line 9 of the 18th line to [thia]. (6) Similarly, on page 39, line 19, ``Selenium-deral amorphous silicon'' is used as ``Se(/Netherle, amorphous silicon J).''2.1Far' 1) An organic coating characterized by containing a compound represented by the general formula (1) (wherein Zl is an atomic group necessary to complete a substituted or unsubstituted nitrogen-containing ring) Zz is optionally substituted biran, thiapyran, selenaviran, benviran,
Indicates the atomic group necessary to complete benzothiapyran, penzose V nabilane, naphthopyran, naphthothiapyranshanaphthoselenaviran, and X is a sulfur atom, a 1'12 elementary atom, or a selenium atom.

Claims (1)

【特許請求の範囲】 下記一般式(+)で示される化合物を含有することを特
徴とする有機被膜。 一般式(1) (式中、Zlは置換又は未置換の含9素複素環を冗成す
るに必eな原子群を示す。Z21.j1置換されてもよ
いビラン、チオビラン、セレナビラン、ベンゾビラン、
ベンゾチオビラン、ベンゾセレナビラン、ナフトピラン
、ナフトチオビラン又はナフトセレナビランを完成する
に必安な原子群を示し、Xけ硫黄原子、酸素原子又はセ
レンノji<子である。Z、は、置換又は未置換の5員
若し7くは0負を形成する2揃の炭化水素基を示す。■
モ、は、水素原子又は首侠も[7くは未置換のアルキル
基を示す。1(,2および1モ、は、水素原子、ハロゲ
ン原子又は1価の有機残基カポす。H,4(、−、J:
、■ 水素原子又はハロゲン原子を小才。Aは、陰・イオンを
示し、+11およびn I:t O又は1で、e &:
、L (1、l又は2である。)
[Scope of Claims] An organic film characterized by containing a compound represented by the following general formula (+). General formula (1) (wherein, Zl represents an atomic group necessary to form a substituted or unsubstituted 9-containing heterocycle.
Indicates an atomic group essential for completing benzothiobilane, benzoselenabilane, naphthopyran, naphthothiobilane or naphthoselenabilane, and is a sulfur atom, an oxygen atom, or a selenium ji<child. Z represents a set of two hydrocarbon groups forming a substituted or unsubstituted 5-membered or 7-membered or 0-negative group. ■
[7] represents a hydrogen atom or an unsubstituted alkyl group. 1(,2 and 1mo, are hydrogen atoms, halogen atoms or monovalent organic residue capos.H,4(,-,J:
, ■ A hydrogen atom or a halogen atom. A indicates an anion/ion, +11 and n I:t O or 1, e &:
, L (1, l or 2)
JP58020786A 1983-02-09 1983-02-09 Organic film Granted JPS59146063A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP58020786A JPS59146063A (en) 1983-02-09 1983-02-09 Organic film
US06/577,208 US4555472A (en) 1983-02-09 1984-02-06 Organic coating film and radiation-sensitive member having the film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58020786A JPS59146063A (en) 1983-02-09 1983-02-09 Organic film

Publications (2)

Publication Number Publication Date
JPS59146063A true JPS59146063A (en) 1984-08-21
JPH0211137B2 JPH0211137B2 (en) 1990-03-13

Family

ID=12036786

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58020786A Granted JPS59146063A (en) 1983-02-09 1983-02-09 Organic film

Country Status (1)

Country Link
JP (1) JPS59146063A (en)

Cited By (130)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6175358A (en) * 1984-09-21 1986-04-17 Canon Inc Electrophotographic sensitive body
EP0646580A2 (en) 1993-09-16 1995-04-05 Ciba-Geigy Ag Vinylether compounds with additional functional groups differing from vinylether and their use in the formulation of curable compositions
EP1223467A2 (en) 2001-01-12 2002-07-17 Fuji Photo Film Co., Ltd. Positive image-forming material
US6627380B2 (en) 2000-05-23 2003-09-30 Dainippon Ink And Chemicals, Inc. Photosensitive composition, original plate using the same for lithographic printing, and method for producing images on original plate
EP1449652A2 (en) 2003-02-21 2004-08-25 Fuji Photo Film Co., Ltd. Planographic printing plate precursor
US6808857B2 (en) 2001-05-21 2004-10-26 Kodak Polychrome Graphics Llc Negative-working photosensitive composition and negative-working photosensitive lithographic printing plate
EP1614537A1 (en) 2004-07-07 2006-01-11 Fuji Photo Film Co., Ltd. Lithographic printing plate precursor and lithographic printing method
EP1619023A2 (en) 2004-07-20 2006-01-25 Fuji Photo Film Co., Ltd. Image forming material
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