JPS59145029U - Plasma CVD equipment - Google Patents

Plasma CVD equipment

Info

Publication number
JPS59145029U
JPS59145029U JP3840783U JP3840783U JPS59145029U JP S59145029 U JPS59145029 U JP S59145029U JP 3840783 U JP3840783 U JP 3840783U JP 3840783 U JP3840783 U JP 3840783U JP S59145029 U JPS59145029 U JP S59145029U
Authority
JP
Japan
Prior art keywords
plasma cvd
cvd equipment
wafer
processing chamber
radiation thermometer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3840783U
Other languages
Japanese (ja)
Other versions
JPH0514504Y2 (en
Inventor
中対　藤次
福島　喜正
掛樋　豊
Original Assignee
株式会社日立製作所
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社日立製作所 filed Critical 株式会社日立製作所
Priority to JP3840783U priority Critical patent/JPS59145029U/en
Publication of JPS59145029U publication Critical patent/JPS59145029U/en
Application granted granted Critical
Publication of JPH0514504Y2 publication Critical patent/JPH0514504Y2/ja
Granted legal-status Critical Current

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  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of drawings]

第１図は、従来のプラズマＣＶＤ装置の縦断面図、第２
図は、本考案によるプラズマＣＶＤ装置の一実施例を示
す下電極の裏面側平面図である。 １・・・下電極、３・・・処理室、５・・・ヒータ、１
０・・・放射温度計、１０ａ・・・熱センサ１．１２・
・・酸化膜。Figure 1 is a vertical cross-sectional view of a conventional plasma CVD apparatus,
The figure is a plan view of the back side of the lower electrode showing an embodiment of the plasma CVD apparatus according to the present invention. 1... Lower electrode, 3... Processing chamber, 5... Heater, 1
0... Radiation thermometer, 10a... Heat sensor 1.12.
··Oxide film.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 減圧排気される処理室に内設されると共に、放射温度計
で温度を測定されつつ所定温度に加熱される電極にウェ
ハを載置し、前記処理室に原料ガスを供給しつつグロー
放電を行い前記ウェハ上に薄膜を形成する装置において
、前記放射温度計の熱センサと対応する前記電極面に酸
化膜を形成したことを特徴とするプラズマＣＶＤ装置。A wafer is placed on an electrode that is installed in a processing chamber that is evacuated to a reduced pressure and heated to a predetermined temperature while the temperature is measured with a radiation thermometer, and glow discharge is performed while supplying raw material gas to the processing chamber. A plasma CVD apparatus for forming a thin film on a wafer, characterized in that an oxide film is formed on the electrode surface corresponding to the thermal sensor of the radiation thermometer.
JP3840783U 1983-03-18 1983-03-18 Plasma CVD equipment Granted JPS59145029U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3840783U JPS59145029U (en) 1983-03-18 1983-03-18 Plasma CVD equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3840783U JPS59145029U (en) 1983-03-18 1983-03-18 Plasma CVD equipment

Publications (2)

Publication Number Publication Date
JPS59145029U true JPS59145029U (en) 1984-09-28
JPH0514504Y2 JPH0514504Y2 (en) 1993-04-19

Family

ID=30169076

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3840783U Granted JPS59145029U (en) 1983-03-18 1983-03-18 Plasma CVD equipment

Country Status (1)

Country Link
JP (1) JPS59145029U (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5019014U (en) * 1973-06-15 1975-03-03

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5019014U (en) * 1973-06-15 1975-03-03

Also Published As

Publication number Publication date
JPH0514504Y2 (en) 1993-04-19

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