JPS59144025A - Thin film magnetic head - Google Patents
Thin film magnetic headInfo
- Publication number
- JPS59144025A JPS59144025A JP1816883A JP1816883A JPS59144025A JP S59144025 A JPS59144025 A JP S59144025A JP 1816883 A JP1816883 A JP 1816883A JP 1816883 A JP1816883 A JP 1816883A JP S59144025 A JPS59144025 A JP S59144025A
- Authority
- JP
- Japan
- Prior art keywords
- magnetic
- yoke
- conductor
- thin film
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3916—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide
- G11B5/3919—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path
- G11B5/3922—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path the read-out elements being disposed in magnetic shunt relative to at least two parts of the flux guide structure
- G11B5/3925—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path the read-out elements being disposed in magnetic shunt relative to at least two parts of the flux guide structure the two parts being thin films
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Magnetic Heads (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は磁気抵抗効果素子を用いた再生用の薄膜磁気ヘ
ッドに関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a thin film magnetic head for reproduction using a magnetoresistive element.
（従来技術）
磁気抵抗効果素子（以下ＭＲ，素子と記す）を用いたヨ
ーク型と称される従来の薄膜磁気ヘッドはたとえば第１
図（ａ）および（ｂ）の平面図および断面図に示す如く
構成されていた。なお、第１図（ａ）において絶縁層は
省略して示しである。(Prior Art) A conventional thin-film magnetic head called a yoke type that uses a magnetoresistive element (hereinafter referred to as MR element) has, for example, a first
It was constructed as shown in the plan view and cross-sectional view of Figures (a) and (b). Note that the insulating layer is omitted in FIG. 1(a).
すなわち、磁性基板１上にバイアス磁界発生用の導体２
を形成し、絶縁層３を挾んでバイアス磁界発生用の導体
２上に対向してＭＲ素子４を形成し、絶縁層３およびＭ
Ｒ素子４上に絶縁層５を形成し、絶縁層５上に磁極６お
よび磁気ヨーク７を所定間隔隔てて形成してあり、磁気
ヨーク７の一端は磁性基板１上に設けである。That is, a conductor 2 for generating a bias magnetic field is placed on a magnetic substrate 1.
, an MR element 4 is formed facing on the conductor 2 for generating a bias magnetic field with the insulating layer 3 in between, and the insulating layer 3 and M
An insulating layer 5 is formed on the R element 4, and a magnetic pole 6 and a magnetic yoke 7 are formed on the insulating layer 5 at a predetermined interval, and one end of the magnetic yoke 7 is provided on the magnetic substrate 1.
上記の如き従来の薄膜磁気ヘッドにおいて矢印Ｐの方向
に走行する磁気テープまたは磁気ディスク等の情報磁気
記録担体８による磁束を磁性基板１と磁極６により導出
し、絶縁層５、磁気ヨーク７を介して磁界をＭＲ素子４
に印加し、ＭＲ素子４の抵抗変化をＭｌ素子４に接続さ
れた電極４１４間の電圧変化として取り出すように構成
しである。ここでバイアス磁界発生用の導体２はＭＲ素
子４の抵抗変化の直線性および感度向上のために必要な
バイアス磁界をＭＲ，素子４に与える電流が通電される
。また、絶縁層３および５はそれぞれバイアス用導体２
とＭＲ素子４との間の電気的絶縁およびＭＲ素子４と磁
極６、磁気ヨーク７との間の電気的絶縁を保持するとと
もに磁気ギャップを形成している。In the conventional thin film magnetic head as described above, the magnetic flux generated by the information magnetic recording carrier 8 such as a magnetic tape or magnetic disk running in the direction of the arrow P is guided by the magnetic substrate 1 and the magnetic pole 6, and is guided through the insulating layer 5 and the magnetic yoke 7. MR element 4
is applied to the MR element 4, and the resistance change of the MR element 4 is extracted as a voltage change between the electrodes 414 connected to the Ml element 4. Here, the conductor 2 for generating a bias magnetic field is energized with a current that provides the MR element 4 with a bias magnetic field necessary for improving the linearity of resistance change and sensitivity of the MR element 4. Further, the insulating layers 3 and 5 are each connected to the bias conductor 2.
It maintains electrical insulation between the MR element 4 and the MR element 4, and between the MR element 4, the magnetic pole 6, and the magnetic yoke 7, and forms a magnetic gap.
しかるに、高密度に記録された磁気記録信号を再生する
ためには磁気ギャップを狭める必要がある。このために
は上記した従来の薄膜磁気ヘッドにおいては絶縁層３お
よび５の厚さを薄くすることが必要になる。たとえば磁
気ギャップを０．３μｍに設定するものとすれば絶縁層
３および５の各々の厚さは０．１５μｍまたは何れか一
方の絶縁層３または５の厚さは０．１５μｍ以下にする
必要がある。However, in order to reproduce magnetic recording signals recorded at high density, it is necessary to narrow the magnetic gap. For this purpose, it is necessary to reduce the thickness of the insulating layers 3 and 5 in the conventional thin film magnetic head described above. For example, if the magnetic gap is set to 0.3 μm, the thickness of each of the insulating layers 3 and 5 must be 0.15 μm, or the thickness of either the insulating layer 3 or 5 must be 0.15 μm or less. be.
かかる要求によって絶縁層３および５の厚さを薄くした
ときにおいても電気的絶縁を維持する必要に変りはない
が、絶縁層を構成する材質の絶縁耐圧上および絶縁層形
成時に生ずるピンホール等の欠陥により、絶縁層３およ
び５を薄くしたときに充分な電気的絶縁性を確保するこ
とが困難になる欠点があった。Even when the thickness of the insulating layers 3 and 5 is made thinner due to such requirements, it is still necessary to maintain electrical insulation. Due to the defects, it is difficult to ensure sufficient electrical insulation when the insulating layers 3 and 5 are made thinner.
またさらに、バイアス磁界発生用の導体２の厚（３）
さはバイアス磁界を発生させるに必要な電流値によって
定まるが、この厚さは磁極６および磁気ヨーク７に不必
要な変形形状を生ぜしめることになり、磁気特性を劣化
させる原因となる欠点があった。Furthermore, the thickness (3) of the conductor 2 for generating the bias magnetic field is determined by the current value required to generate the bias magnetic field, but this thickness may cause unnecessary deformation of the magnetic pole 6 and the magnetic yoke 7. Therefore, there was a drawback that caused deterioration of magnetic properties.
（発明の目的）
本発明は上記にかんがみなされたもので、磁気ギャップ
を小さく形成できかつ磁極と磁気ヨークとの磁気特性の
劣化のない薄膜磁気ヘッドを提供することを目的とする
。(Object of the Invention) The present invention has been made in view of the above, and an object of the present invention is to provide a thin-film magnetic head in which the magnetic gap can be formed small and the magnetic properties of the magnetic pole and the magnetic yoke are not deteriorated.
この目的は本発明によれば、ヨーク型の薄膜磁気ヘッド
において、バイアス磁界発生用の導体をＭＲ素子に対し
て基板と反対側の位置に形成することにより達成される
。According to the present invention, this object is achieved in a yoke-type thin film magnetic head by forming a conductor for generating a bias magnetic field at a position opposite to the substrate with respect to the MR element.
以下、本発明を実施例により説明する。The present invention will be explained below with reference to Examples.
（発明の一実施例の構成）
第２図（ａ）は本発明の一実施例における薄膜磁気ヘッ
ドの平面図であり、絶縁層は省略して示しである。第２
図（ｂ）は第２図（ａ）のＢ−Ｂ断面図である。(Structure of an Embodiment of the Invention) FIG. 2(a) is a plan view of a thin film magnetic head in an embodiment of the invention, with the insulating layer omitted. Second
FIG. 2(b) is a sectional view taken along line BB in FIG. 2(a).
本発明の一実施例における薄膜磁気ヘッドは、（４）
磁性基板１上に形成した非磁性体層１０を挾んで磁性体
よりなる磁極６Ａ と、一端側を磁性基板１上に設け
られた磁性体からなる磁気ヨーク７Ａ とが所定間隔
隔てて形成しである。磁極６Ａ の磁気ヨーク７人
との対向面は傾斜面状に形成してあり、磁気ヨーク７Ａ
の磁極６Ａ との対向面も傾斜面状に形成しである
。磁極６Ａ 上、磁気ヨーク７Ａ上および磁極６Ａ
と磁気ヨーク７Ａ との間の非磁性体層１０表面部分
上に絶縁層１１が形成してあり、磁極６Ａ と磁気ヨ
ーク７人 との間の非磁性体層１０の部分に対向して
絶縁層１１を挾さんで、中央部分が位置するようにＭＲ
素子４Ａが形成しである。絶縁層１１の露出表面上およ
びＭＲ素子４Ａ上には絶縁層１２が形成してあわ、絶縁
層１２を挾んでＭＲ素子４人 に対向してバイアス磁界
発生用の導体５Ａ が形成しである。すなわち、バイア
ス磁界発生用の導体５Ａ はＭＲ素子４人 に対して磁
性基板１と反対側に位置せしめてあり、またＭＲ素子４
Ａ の両端は絶縁層１１をはさんで磁極２人 の傾斜面
および磁気ヨークの傾斜面に対向させである。A thin film magnetic head according to an embodiment of the present invention includes (4) a magnetic pole 6A made of a magnetic material sandwiching a non-magnetic layer 10 formed on a magnetic substrate 1; A magnetic yoke 7A consisting of a body is formed at a predetermined interval. 7 magnetic yoke with magnetic pole 6A
The surface facing the magnetic yoke 7A is formed into an inclined surface shape.
The surface facing the magnetic pole 6A is also formed into an inclined surface shape. Magnetic pole 6A top, magnetic yoke 7A top and magnetic pole 6A
An insulating layer 11 is formed on the surface of the non-magnetic layer 10 between the magnetic pole 6A and the magnetic yoke 7A, and an insulating layer 11 is formed on the surface of the non-magnetic layer 10 between the magnetic pole 6A and the magnetic yoke 7A. Hold 11 in between and place MR so that the center part is located.
Element 4A is formed. An insulating layer 12 is formed on the exposed surface of the insulating layer 11 and on the MR element 4A, and a conductor 5A for generating a bias magnetic field is formed facing the four MR elements with the insulating layer 12 in between. That is, the conductor 5A for generating the bias magnetic field is located on the opposite side of the magnetic substrate 1 with respect to the four MR elements, and
Both ends of A are opposed to the inclined surfaces of the two magnetic poles and the inclined surface of the magnetic yoke, with the insulating layer 11 in between.
なお、４および４はＭＲ素子４Ａ の抵抗を導出するた
めの電極である。Note that 4 and 4 are electrodes for deriving the resistance of the MR element 4A.
また、ＭＲ素子４Ａ％電極４．４、バイアス磁界発生用
の導体５Ａ ％磁極６Ａ および磁気ヨーク７Ａ は、
従来の場合と同様に蒸着、イオンブレーティングまたは
スパッタリング等により形成しである。In addition, the MR element 4A% electrode 4.4, the conductor for bias magnetic field generation 5A%, the magnetic pole 6A, and the magnetic yoke 7A are as follows:
It is formed by vapor deposition, ion blasting, sputtering, etc. as in the conventional case.
さらには、非磁性体層１０および絶縁層１１．１２には
耐摩耗性の高い絶縁材、例えばアルミナを使用すると共
に、磁性基板１および磁極６Ａ にも耐摩耗性の良好な
センダスト、モリブデンパーマロイ、および単結晶ある
いは多結晶フェライト等の磁性材を使用することによっ
て、薄膜磁気ヘッドの摩耗による劣化を防止することが
できる。Furthermore, an insulating material with high wear resistance, such as alumina, is used for the non-magnetic layer 10 and the insulating layers 11.12, and the magnetic substrate 1 and the magnetic pole 6A are also made of sendust, molybdenum permalloy, etc., which have good wear resistance. By using a magnetic material such as single crystal or polycrystalline ferrite, it is possible to prevent the thin film magnetic head from deteriorating due to wear.
（発明の一実施例の作用）
以上の如く構成した本発明の一実施例において矢印Ｐの
方向に走行する情報磁気記録担体８による磁束は磁性基
板１と磁極６Ａ とにより導出され、絶縁層１１、磁
気ヨーク７人 を介して磁界がＭＲ素子４Ａ に印加さ
れる。この磁界によりＭＲ素子４Ａ はその抵抗値が変
化して、電極４．４間の電圧変化として取り出され、情
報磁気記録担体８の情報を再生することができる。また
、バイアス磁界発生用の導体５Ａ に所定のバイアス用
電流を流すことによりＭＲ素子４Ａ にバイアス磁界を
印加することができ、バイアス電流を設定することによ
りＭＲ素子４Ａ の抵抗変化の直線性と感度の最も良好
な特性を呈する部分で情報を再生することができる。こ
れらの作用は従来の薄膜磁気ヘッドの場合と全く同様で
ある。(Operation of an embodiment of the invention) In an embodiment of the invention configured as described above, the magnetic flux generated by the information magnetic recording carrier 8 traveling in the direction of the arrow P is led out by the magnetic substrate 1 and the magnetic pole 6A, and the magnetic flux from the insulating layer 11 , a magnetic field is applied to the MR element 4A via the magnetic yoke 7. This magnetic field changes the resistance value of the MR element 4A, which is taken out as a voltage change between the electrodes 4, 4, and the information on the information magnetic recording carrier 8 can be reproduced. In addition, a bias magnetic field can be applied to the MR element 4A by passing a predetermined bias current through the bias magnetic field generating conductor 5A, and by setting the bias current, the linearity of the resistance change of the MR element 4A can be improved. The information can be reproduced in the part exhibiting the best characteristics. These functions are exactly the same as those of conventional thin film magnetic heads.
しかるに本発明の一実施例においては、磁性基板１と、
磁極６Ａ 、磁気ヨーク７Ａ との間には非磁性体層
１０が存在するのみであり、非磁性体層１０の厚さのみ
が磁気ギャップを一義的に定めるほか、非磁性体層１０
は電気的絶縁性を考慮する必要がガく、電気的絶縁性は
絶縁層１１および１２によって付与されることになり、
絶縁層１１および１２の厚さに無関係に非磁性体層１０
の厚さすなわち磁気ギャップを設定することができ、（
７）
磁気ギャップを狭くすることが可能にガる。However, in one embodiment of the present invention, the magnetic substrate 1 and
Only the non-magnetic layer 10 exists between the magnetic pole 6A and the magnetic yoke 7A, and only the thickness of the non-magnetic layer 10 uniquely determines the magnetic gap.
It is necessary to consider electrical insulation, and electrical insulation is provided by the insulating layers 11 and 12.
Non-magnetic layer 10 regardless of the thickness of insulating layers 11 and 12
can set the thickness i.e. the magnetic gap, (
7) It is possible to narrow the magnetic gap.
またさらに、バイアス磁界発生用の導体５Ａ はＭＲ素
子４人 に対して磁性基板１の反対側に位置し、最外端
に位置している。このためバイアス磁界発生用の導体５
Ａ の厚さによって磁極６Ａ および磁気ヨーク７Ａの
形状は不必要な変形した形状に形成させられることはな
く、バイアス磁界発生用の導体５Ａ の厚さはＭＲ素子
４Ａ に必要なノ（イアス磁界を発生させ得る電流値の
みに依存して設定することができる。Furthermore, the bias magnetic field generating conductor 5A is located on the opposite side of the magnetic substrate 1 to the four MR elements, and is located at the outermost end. Therefore, the conductor 5 for generating the bias magnetic field
The thickness of the magnetic pole 6A and the magnetic yoke 7A are prevented from being formed into unnecessary deformed shapes, and the thickness of the conductor 5A for generating the bias magnetic field is set to the thickness necessary for the MR element 4A. It can be set depending only on the current value that can be generated.
また、磁性基板１は非磁性体基板１上に磁性層を形成し
たものを基板としてもよく、この様に構成しても本発明
の一実施例と全く同様に構成しすることができ、その作
用も同一である。またさらに磁極６Ａ％磁気ヨーク７人
および非磁性体層１０が共に非導電体からなる場合に
おいては絶縁層１１を省略してもよく、このときにはＭ
Ｒ素子４Ａ を磁極６Ａ と磁気ヨーク７Ａ との
間に位置せしめることができ、この場合に平面上におい
て磁極６Ａ ｚ磁気ヨーク７Ａ と、ＭＲ素子４Ａ
との重（８）
なり合う部分の幅を零にすることができる。Further, the magnetic substrate 1 may be a substrate in which a magnetic layer is formed on the non-magnetic substrate 1, and even if configured in this way, it can be configured in exactly the same manner as one embodiment of the present invention. The action is also the same. Further, in the case where both the magnetic pole 6A% magnetic yoke 7 and the non-magnetic layer 10 are made of a non-conductor, the insulating layer 11 may be omitted; in this case, the M
The R element 4A can be positioned between the magnetic pole 6A and the magnetic yoke 7A, and in this case, the magnetic pole 6Azmagnetic yoke 7A and the MR element 4A on a plane.
Weight with (8) The width of the part where they overlap can be made zero.
また、磁極６Ａ と磁気ヨーク７Ａ との対向面は
傾斜面に形成した場合を例示したが、この対向面は磁性
基板１の表面に対して垂直面に形成してもよい。Further, although the facing surfaces of the magnetic pole 6A and the magnetic yoke 7A are formed as inclined surfaces, the facing surfaces may be formed as perpendicular surfaces to the surface of the magnetic substrate 1.
（発明の効果）
以上説明した如く本発明によれば、ヨーク型の薄膜磁気
ヘッドにおいてバイアス磁界発生用の導体をＭＲ素子に
対して基板と反対側に形成させたために、電気絶縁性を
考慮することなしに磁気ギャップを狭くすることができ
ると共に、磁極および磁気ヨークが不必要な変形形状に
形成されることもなくなり、従来のヨーク型薄膜磁気ヘ
ッドの欠点が解消される。(Effects of the Invention) As explained above, according to the present invention, in a yoke-type thin film magnetic head, the conductor for generating a bias magnetic field is formed on the side opposite to the substrate with respect to the MR element, so that electrical insulation is taken into account. The magnetic gap can be narrowed without any problems, and the magnetic poles and magnetic yokes are not formed into unnecessary deformed shapes, thus eliminating the drawbacks of conventional yoke-type thin film magnetic heads.
また絶縁層および非磁性体層に硬度の高いアルミナ等を
使用できるので、耐摩耗性を向上することが可能となる
。Furthermore, since alumina or the like having high hardness can be used for the insulating layer and the nonmagnetic layer, it is possible to improve wear resistance.
さらには、バイアス磁界発生用の導体の形成位置を変え
るという簡単な構成であり、本発明の薄膜磁気ヘッドの
製造において従来の薄膜磁気ヘッドの製造技術がそのま
ま利用できる。Furthermore, the configuration is simple, simply changing the formation position of the conductor for generating the bias magnetic field, and conventional thin-film magnetic head manufacturing techniques can be used as is in manufacturing the thin-film magnetic head of the present invention.
゛ 第１図（ａ）および（ｂ）は従来の薄膜磁気ヘッド
の平面図およびＡ−Ａ断面図。
第２図（ａ）およびΦ）は本発明の一実施例における薄
膜磁気ヘッドの平面図および第２図（ａ）のＢ−Ｂ断面
図。
１・・磁性基板、４Ａ ・・ＭＲ素子、５人 バイ
アス磁界発生用の導体、６Ａ ・・磁極、７Ａ 磁
気ヨーク、８・・・情報磁気記録担体、１０ 非磁性体
層、１１および１２・・・絶縁層。
特許出願人 トリオ株式会社
代理人 弁理士 砂子信夫1(a) and (b) are a plan view and a sectional view taken along line A-A of a conventional thin-film magnetic head. FIGS. 2(a) and Φ) are a plan view of a thin film magnetic head according to an embodiment of the present invention, and a sectional view taken along line BB in FIG. 2(a). 1...Magnetic substrate, 4A...MR element, 5 people Conductor for generating bias magnetic field, 6A...Magnetic pole, 7A Magnetic yoke, 8...Magnetic information recording carrier, 10 Non-magnetic layer, 11 and 12...・Insulating layer. Patent applicant Trio Co., Ltd. Agent Patent attorney Nobuo Sunako
Claims (2)
けたヨーク型の薄膜磁気ヘッドにおいて、バイアス磁界
発生用の導体を磁気抵抗効果素子に対し基板と反対側に
設けてなることを特徴とする薄膜磁気ヘッド。(1) A yoke-type thin film magnetic head in which a magnetoresistive element is provided between a magnetic pole and a magnetic yoke, characterized in that a conductor for generating a bias magnetic field is provided on the opposite side of the substrate to the magnetoresistive element. Thin film magnetic head.
クの面を傾斜面に形成してなることを特徴とする特許請
求の範囲第１項記載の薄膜磁気ヘッド。(2) The thin film magnetic head according to claim 1, wherein the surfaces of the magnetic pole and magnetic yoke that oppose the magnetoresistive element are formed as inclined surfaces.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1816883A JPS59144025A (en) | 1983-02-08 | 1983-02-08 | Thin film magnetic head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1816883A JPS59144025A (en) | 1983-02-08 | 1983-02-08 | Thin film magnetic head |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59144025A true JPS59144025A (en) | 1984-08-17 |
| JPH0444322B2 JPH0444322B2 (en) | 1992-07-21 |
Family
ID=11964076
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1816883A Granted JPS59144025A (en) | 1983-02-08 | 1983-02-08 | Thin film magnetic head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59144025A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL1011679C2 (en) * | 1999-03-26 | 2000-09-27 | Onstream B V | Magnetic flux sensor. |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57150963U (en) * | 1981-03-18 | 1982-09-22 | ||
| JPS57203226A (en) * | 1981-06-09 | 1982-12-13 | Mitsubishi Electric Corp | Thin film magnetic reluctance head |
| JPS57208625A (en) * | 1981-06-19 | 1982-12-21 | Hitachi Ltd | Thin film magnetic head |
-
1983
- 1983-02-08 JP JP1816883A patent/JPS59144025A/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57150963U (en) * | 1981-03-18 | 1982-09-22 | ||
| JPS57203226A (en) * | 1981-06-09 | 1982-12-13 | Mitsubishi Electric Corp | Thin film magnetic reluctance head |
| JPS57208625A (en) * | 1981-06-19 | 1982-12-21 | Hitachi Ltd | Thin film magnetic head |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL1011679C2 (en) * | 1999-03-26 | 2000-09-27 | Onstream B V | Magnetic flux sensor. |
| WO2000058742A1 (en) * | 1999-03-26 | 2000-10-05 | Onstream B.V. | Magnetic flux sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0444322B2 (en) | 1992-07-21 |
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