JPS59141499A - Preparation of single crystal of ferrite - Google Patents
Preparation of single crystal of ferriteInfo
- Publication number
- JPS59141499A JPS59141499A JP58011496A JP1149683A JPS59141499A JP S59141499 A JPS59141499 A JP S59141499A JP 58011496 A JP58011496 A JP 58011496A JP 1149683 A JP1149683 A JP 1149683A JP S59141499 A JPS59141499 A JP S59141499A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- polycrystal
- ferrite
- crystal
- compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B1/00—Single-crystal growth directly from the solid state
- C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/26—Complex oxides with formula BMe2O4, wherein B is Mg, Ni, Co, Al, Zn, or Cd and Me is Fe, Ga, Sc, Cr, Co, or Al
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Soft Magnetic Materials (AREA)
Abstract
Description
【発明の詳細な説明】
【産業上の利用分野）
本発明は、′磁気ヘッド桐材として利用される単結晶フ
ェライトの製造方法に関するものである。
（従来例の構成とその問題点）
従来 ｆｌ結晶と多結晶とを接合し、これを熱処理する
ことにより多結晶を単結晶化する接合型単結晶の製造方
法が知られている。これは、捷ず、単結晶、多結晶双方
の接合面を鏡面研摩した後、表面活性を高めるためにそ
の鏡面に酸を塗布して両者を張り合わせ、しかる後熱処
理を行な°つて多結晶を単結晶化する。゛しかしながら
、この方法は同相反応であるため単結晶化の速磨の大き
さにはおのずから限界があった。
（発明の目的）
本発明は、上記従来例の欠点を改善したもので、単結晶
化の速度が太きく、低コストで、倒産性の高い単結晶フ
ェライトの製造方法を提侠するものである。
（発明の構成）
上記目的を達成するーために、本発明では、？１１結品
と多結晶の接合に先立って、それらの接合面のいずれか
一方゛マ／こ（ｄ両方に、フェライトの液相焼結を誘起
する化合物の薄膜を予め形成し、そのプ両者の接合面を
張り合わせて熱処理するものである。
シ、１、図面を用いて実施例を詳細に説明する。
（実施例の説明）
第１図は、本発明の接合型単結晶フェライトの単結晶育
成オでのゴニ程を模式的（Ｃ示し／こもので、第１図（
Ａ）は単結晶１七多結晶２とを張り合わせるｎｉｌの状
態を示しており、１ａは単結晶１の接合面、２ａＮ多結
晶２の接合面である。第１図（１＋） ＩＩ、イノＬら
接合面を互いに接合した後、熱処理１７だ接合体を示し
ており、多結晶２′は１部部結晶化している。第１図（
Ｃ）は、第１図（Ｂ）の複合体をｘ−ｘ’で切断した後
、研＋ｑ、エツチングした断面を示している。３は多結
晶から単結晶化した部分であり、１は一！だ１１ｊ結晶
化［７ていない多結晶部分である。５はｊｌ’＋結晶化
の界面である。
本発明の製造方法、を説明すると、捷ず、単結晶１・及
び多結晶２の各接合面１ａ、 ２ａをよく研摩し、そ
の接合面１ａ、’ ２ａの一方又は両方に、後述するフ
ェライトの液相焼結を誘起する化合物を、スパッター、
蒸着、ＣＶＤ（ケミカル ペーパー ディポジション）
、その他の薄膜作製方法により１μｍ以下のＮ ＢｔＡ
として形成する。次に、単結晶１と多結晶２の接合面１
ａ、２ａを合わせ、加熱又は加圧熱処理により互いに接
合する。このようにして後合し／こ接合体如、さらに熱
処理を施Ｉ７、多結晶を単結晶に成長させる。
ここで、単結晶と多結晶の接合面てフェライトの液相焼
結を誘起する化合物を含廿ない場合は、第２図に示した
ように、単結晶部分３と多結晶部分４の結晶粒子との固
相反応により単結晶化が進部分４の結晶粒子が、界面５
で単結晶のれ＋１晶方位に強制的にそろえられ吸引され
ていくため、この反応が律速になる。
一方、本発明方法により、単結晶と多結晶の汲置ｉｎ）
に予め液相焼結を誘起する化合物を形成した場合は、第
３図に示したように、単結晶部分３と多結晶部分４との
界面５において、化合物が周囲のフェライトと反応して
薄い液相６を形成する。
この液相の層の厚さは、最初単結晶と多結晶の接合面に
形成された化合物の薄膜の厚さに比例する。
本発明者等が接合面に形成する化合物の膜厚について実
験、検削を行なっ／こ結果、１μｍ以トの膜ｊワの楊合
如単結晶化の速度が最も大きくなることが判明し／こ。
この液相６の役割は、多結晶７＜１５分４の結晶粒子を
溶かＩ〜込み、この液相中でフェライトの各成分イメン
を拡散移動させ、中結晶ｒｙｔｔ分゛う側で再析出させ
るものである。この過程は、固相反応による結晶粒イの
単結晶への吸収過程に匹べて紗倍速い。その結果、界面
５の移動速度、即ち、単結晶化の速ＩＩが大きくなるも
のである。
本発明方法を実施−ノ“るに当って、液相６に含まれる
化合物が、中、結晶化終了後の単結晶内部に、できるだ
け取り込脣れないこと、即ちフェライト単結晶内に拡散
しにくいこと、あるいは／ことえ拡散しても、磁気的特
杆その他の特性を劣化させるもので々いことが必要であ
る。
本発明者等が、液相焼結を誘起する各種化合物を検討し
た結果、Ｎａ２Ｏ，Ｖ２Ｏ５＋ Ｃａｂ、 ５ｉｏ２．
Ｃ＋＋２０． Ｃｒの酸化物および５ｂ２０３のうち
少なくとも１種類が、単結晶と多結晶の接合面に入って
いると、液相が形成されて本発明の目的が達成され、る
ことかわかった。
次如、本発明の具体的実施例（（ついて説明する。
実施例１
最終組成比が、５２モル％ＦＣ２０３１３２モル％Ｍｎ
Ｏ。
１６モル％ＺｎＯになるように、純度９９．５ ％のα
−Ｆ（４２０：、。
１８２５ｇと、含有量９１．２％のＭｎＣＯ３８８，７
ｇとＡ純度９ ＜ｓ％のＺｎＯ２８，７ｇを秤量し、ウ
レタンボールミルにて、湿式で１５時間混合し、９００
℃−２時間、空気中で仮焼した。仮焼後、再度、ウレタ
ンボールミルで１５時時間式混合し、その後、その沈殿
物を、１３０℃で１０時間乾燥した。純水を１２〜１５
係加えてライカイ器にて造粒し、粒度をイろえ／Ｃ後、
：３００ｋｇ／Ｇｍ２の成形圧で造粒粉を成形した。こ
の成形体を空気中にて、１２８０°Ｃ−３時間、３００
ｋｇＡｗ？でボッ１グレス１．て、平均結晶粒径２５
μｍ１気孔率００２％の焼結体を得た。この焼結体を］
０’Ｘ ２０ Ｘ ３０Ｊの直方体に切断し、２０Ｘ：
３Ｑｍｍ２の而を接合面とし、この而を寺２０００メツ
／ユのＧＣＣ研削剤、さらに≠４０００ノソンユのＧＣ
研１？剤で研Ｆ？ ｌ、た後、直径３μｍのダイヤモン
ド砥粒で研厚し、鏡面に仕上げだ。このような多結晶を
複数個用、きし、その鏡１ｒｉｉ Ｋ Ａｒカスを用い
たスパック−法により、そわ−ぞれＮａ２Ｏ＋ Ｖ２Ｏ
５１Ｃａｒｔ Ｃｕ２Ｏ＋ ５ｉ０２＋ Ｃｒ２Ｏ３＋
５ｂ２ｏ２及びＳｒＯ，ｐｂｏ、 ８ａＯの薄膜を】
０００＾の厚みで形成した。
一方、多結晶と同組成のＪｌｉ結晶を、フリッンーｌン
法にてイ′［製し、接合面が（１００）面に、そｉｔ、
と垂直な面が４１１０） Ｋなるよって、２０Ｘ３０Ｘ
］５ｍ−の試料片を切断し／こ。接合面の２０Ｘ３Ｑ＋
ｕ＋ を、多結晶と同様な方θ、で鏡面研削し、表面
活性を高めるため希硝酸を塗布後、多結晶とｍ結晶の各
接合面を互いに張り合せ、Ｎ２中で１３２０℃、６時間
の熱処理を行なった。比較のため、同一の多結晶で化合
物をスパッター シないものを用い、同一条件−トで、
単結晶との接合及び熱処理を行なった。熱処理後、接合
体を中央部で切断し、切断面を鏡面研削し、塩酸にてエ
ツチングし、単結晶化の長さＳをｉＩ］１［定した。本
発明のＮａ２Ｏ＋ Ｖ２Ｏ５，Ｃａｂ、 ５ｉ０２．
Ｃｕ２Ｏ，Ｃｒ２Ｏ３＋ｓｔ、２ｏ３をスパッター［７
たものでは単結晶化長さＳは４〜５羽、Ｂａｄ、 Ｓｒ
Ｏ，ＰｂＯをスパッターしたものではＳけ約２ ｍｍ、
化合物をスパッターしなかったものではＳは１龍以下で
あった。
上記のごとき本発明方法により多結晶から一中結晶化反
だ部分を切り出し、磁気特性を調べだところ、周波数１
ｋＨｚでの透磁率（μｍｋ）が１．０．０００で、抗
磁力（Ｈｃ）は０．０５ （Ｏｅ）であった。たたし、
１１ａＯ。
ＳｒＯ，ＰｂＯをスパッターしたものでは、μｍｋが５
、０００−６．０００． ＨｃがＱ、ｌｏｅであツ／コ
。一本発明方法によるものは、従来のノリソノマン法で
作製された同一組成の単結晶と同等の特性であった。
この単結晶を用いて磁気ヘッドを試作し、・〜ラドの特
性を調べた結果、Ｓ／′Ｎ及び周波数５ Ｍｌ、、１
ｚでの出力では、ノリフシ−フン法で作製されたものと
、同等もしくはそれ以上イあっ／こ。なお、化合物の７
バツターをｔ１ウ−結晶の接合面にしても、又、両者の
接合面にしても（但Ｌ７薄膜の厚みは台用して１ ／１
ｍを越えないようにする）効果は、同じであった。
実施例２
実施例１と同様に作成したＭｎ−Ｚｎ多結晶に、Ｎａ
２０ ＋Ｖ２Ｏ５＋ Ｃｕ２Ｏ＋ ５ｉ０２＋
Ｃｒ２Ｏ：＋＋ ５ｂ２０３ を １００人、 ２
０（１０人。
５０００Ｘ、 １μｍ、 ２μｍの各厚みでスパッター
し、実施例１と同様に単結晶と接合し、熱処理を行なう
ことにより単結晶化を試み／こ。その結果、単結晶化長
さＳは、薄膜の厚みに対して、４ 、４ 、３ 、２
。
０５關となり１．薄膜の厚みが１／７ｍを越すと、逆に
１１１結晶化が悪くなった。
（発明の効果）
Ｊン上説明したよう匠、本発明によれは、ソリノジマン
θミで作製された単結晶と同等以上の唱慴を有する中結
晶フエライ１を、従来の接合型１４１１結晶フエライト
の製造方法に比べて４〜５倍以上速く製造することがで
きる効果がある。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for manufacturing single crystal ferrite used as a paulownia material for a magnetic head. (Structure of conventional example and its problems) Conventional A method for manufacturing a bonded single crystal is known in which a fl crystal and a polycrystal are bonded and the polycrystal is turned into a single crystal by heat-treating the bonded material. This is done by mirror-polishing the bonding surfaces of both the single crystal and polycrystals without separating them, then applying acid to the mirror surfaces to increase surface activity and bonding them together, followed by heat treatment to form the polycrystals. Become a single crystal. However, since this method involves an in-phase reaction, there is a natural limit to how quickly it can produce single crystals. (Objective of the Invention) The present invention improves the drawbacks of the above-mentioned conventional examples, and proposes a method for producing single crystal ferrite that has a high single crystallization speed, is low cost, and has a high risk of bankruptcy. . (Structure of the Invention) In order to achieve the above object, the present invention: 11 Prior to joining the crystal and polycrystal, a thin film of a compound that induces liquid phase sintering of ferrite is formed on either one of their joint surfaces, and The bonded surfaces are pasted together and heat treated. Example 1. Examples will be explained in detail with reference to the drawings. (Explanation of Example) Figure 1 shows the single crystal growth of the bonded single crystal ferrite of the present invention. Schematic representation of the goni length at O (C shown/in Figure 1)
A) shows a nil state in which the single crystal 1 and the heptad polycrystal 2 are bonded together, where 1a is the bonding surface of the single crystal 1 and the bonding surface of the 2aN polycrystal 2. FIG. 1 (1+) shows a bonded body which has been heat-treated 17 after bonding surfaces of II, Inno L, etc., and the polycrystal 2' is partially crystallized. Figure 1 (
C) shows a cross section obtained by cutting the composite of FIG. 1(B) along xx', polishing +q, and etching. 3 is the part that has become a single crystal from polycrystal, and 1 is one! It is a polycrystalline part that is not crystallized. 5 is the jl'+crystallization interface. To explain the manufacturing method of the present invention, the joint surfaces 1a and 2a of the single crystal 1 and the polycrystal 2 are well polished without being separated, and one or both of the joint surfaces 1a and 2a is coated with ferrite, which will be described later. Sputtering a compound that induces liquid phase sintering,
Vapor deposition, CVD (chemical paper deposition)
, N BtA of 1 μm or less by other thin film fabrication methods
form as. Next, the joint surface 1 of the single crystal 1 and the polycrystal 2
A and 2a are combined and bonded to each other by heating or pressure heat treatment. In this manner, the bonded/bonded body is further heat treated (I7) to grow the polycrystal into a single crystal. Here, if the joint surface between the single crystal and polycrystal does not contain a compound that induces liquid phase sintering of ferrite, the crystal grains of the single crystal part 3 and the polycrystal part 4 will be separated as shown in FIG. Single crystallization progresses due to the solid phase reaction with
This reaction becomes rate-determining because the single crystal is forcibly aligned and attracted to the single-crystal shear +1 crystal orientation. On the other hand, by the method of the present invention, single crystal and polycrystal
If a compound that induces liquid phase sintering is formed in advance, the compound reacts with the surrounding ferrite at the interface 5 between the single crystal part 3 and the polycrystal part 4, as shown in FIG. A liquid phase 6 is formed. The thickness of this liquid phase layer is proportional to the thickness of the thin compound film initially formed on the interface between the single crystal and the polycrystal. The inventors of the present invention conducted experiments and inspections regarding the thickness of the compound film formed on the bonding surface, and as a result, it was found that the rate of single crystallization is the highest for a film of 1 μm or less. The role of this liquid phase 6 is to dissolve the crystal grains of polycrystalline 7<15/4, to diffuse and move each component of ferrite in this liquid phase, and to re-precipitate on the other side of the middle crystal rytt. It is something that makes you This process is much faster than the absorption process of crystal grains A into a single crystal due to solid phase reaction. As a result, the moving speed of the interface 5, that is, the single crystallization speed II increases. When carrying out the method of the present invention, it is important to ensure that the compounds contained in the liquid phase 6 are not incorporated into the single crystal after crystallization as much as possible, that is, they are not diffused into the ferrite single crystal. The present inventors have investigated various compounds that induce liquid phase sintering. As a result, Na2O, V2O5+ Cab, 5io2.
C++20. It has been found that when at least one of the Cr oxide and 5b203 is present at the interface between the single crystal and the polycrystal, a liquid phase is formed and the object of the present invention is achieved. Specific examples of the present invention will be described below. Example 1 The final composition ratio is 52 mol%FC203132 mol%Mn
O. α of 99.5% purity to make 16 mol% ZnO
-F(420:,. 1825g and MnCO388,7 with a content of 91.2%
Weighed 28.7 g of ZnO with a purity of 9 < s% and wet mixed it in a urethane ball mill for 15 hours.
It was calcined in air for -2 hours. After calcining, the mixture was mixed again for 15 hours using a urethane ball mill, and then the precipitate was dried at 130° C. for 10 hours. Pure water 12-15
After adding particles and granulating with a Raikai machine and changing the particle size/C,
: The granulated powder was molded at a molding pressure of 300 kg/Gm2. This molded body was placed in the air at 1280°C for 3 hours at 300°C.
kgAw? Debok 1 Gress 1. So, the average grain size is 25
A sintered body with a porosity of 0.2% per μm was obtained. This sintered body]
Cut into a rectangular parallelepiped of 0'X 20X 30J, 20X:
The surface of 3Qmm2 is used as the joint surface, and this surface is treated with a GCC abrasive of 2000mm/yu, and a GC of ≠4000mm/yu.
Ken 1? Ken F? After polishing, it is polished to a mirror finish using diamond abrasive grains with a diameter of 3 μm. By using a plurality of such polycrystals, sintering them, and using the spackle method using K Ar scum, each of them is made into Na2O+V2O.
51Cart Cu2O+ 5i02+ Cr2O3+
Thin films of 5b2o2, SrO, pbo, 8aO】
It was formed with a thickness of 000^. On the other hand, a Jli crystal with the same composition as the polycrystal was manufactured by the Flin-In method, and the bonding surface was the (100) plane.
The plane perpendicular to is 4110) K, so 20X30X
] Cut a 5 m sample piece. 20X3Q+ of joint surface
The u+ was mirror-ground using the same method θ as for the polycrystal, and dilute nitric acid was applied to increase the surface activity.The joint surfaces of the polycrystal and the m-crystal were bonded to each other and then heated in N2 at 1320°C for 6 hours. Heat treatment was performed. For comparison, the same polycrystal without the compound sputtered was used under the same conditions.
Bonding with the single crystal and heat treatment were performed. After the heat treatment, the joined body was cut at the center, the cut surface was mirror-ground, and etched with hydrochloric acid to determine the length S of single crystallization iI]1. Na2O+ V2O5, Cab, 5i02. of the present invention.
Sputter Cu2O, Cr2O3+st, 2o3 [7
The single crystallization length S is 4 to 5, Bad, Sr.
In the case of sputtering O, PbO, the S thickness is about 2 mm,
In the case where the compound was not sputtered, S was 1 dragon or less. Using the above-mentioned method of the present invention, we cut out a crystallized part from a polycrystal and examined its magnetic properties.
The magnetic permeability (μmk) at kHz was 1.0.000, and the coercive force (Hc) was 0.05 (Oe). Tatashi,
11aO. For those sputtered with SrO and PbO, μmk is 5
,000-6.000. Hc is Q, loe is Tsu/ko. One crystal produced by the method of the present invention had properties equivalent to those of a single crystal of the same composition produced by the conventional Norisonoman method. As a result of making a prototype magnetic head using this single crystal and investigating the characteristics of ... Rad, S/'N and frequency 5 Ml, 1
The output in Z is equivalent to or better than that produced by the Norifushifun method. In addition, compound 7
Whether the butter is used as the bonding surface of the T1W crystal or the bonding surface of the two (however, the thickness of the L7 thin film is 1/1 for the table).
(do not exceed m) the effect was the same. Example 2 Mn-Zn polycrystal prepared in the same manner as Example 1 was added with Na
20 +V2O5+ Cu2O+ 5i02+
Cr2O: ++ 5b203 for 100 people, 2
0 (10 people. Sputtering with each thickness of 5000X, 1 μm, and 2 μm, bonding with a single crystal in the same manner as in Example 1, and performing heat treatment to attempt single crystallization. As a result, the single crystal length S is 4, 4, 3, 2 with respect to the thickness of the thin film.
. 05 and 1. When the thickness of the thin film exceeded 1/7 m, 111 crystallization worsened. (Effects of the Invention) As explained above, the present invention allows medium-crystal ferrite 1, which has an appeal equal to or higher than that of a single crystal produced by solinodiman θ, to a conventional bonded type 1411-crystal ferrite. It has the effect of being able to manufacture 4 to 5 times faster than other manufacturing methods.
第１図は、本発明の接合型単結晶フＪライトの単結晶育
成捷ての製造工程を模式的匠示した図、第２図は、従来
の固相反応による単結晶化を説明する図、第３図は、本
発明方法による単結晶化を説明する図である。
１ ・・−・・・中結晶、 ２・・・−・・・多結晶、
ｌａ、２ａ・・・・・ 接合面、 ３・・・・・・・
多結晶から単結晶化した部分、 ４ ・・・・・・・・
・多結晶部分、 ５ ・・・・・・・・単結晶化の界面
、 ６・・・・・・・・液相。
特許出願人 松Ｆ電器産業株式会社
第１図
（Ａｌ
（８）
（Ｃ）
第２図
第３図Fig. 1 is a diagram schematically showing the manufacturing process of the bonded single-crystal flight J-lite of the present invention including single crystal growth and cutting, and Fig. 2 is a diagram illustrating the conventional single crystallization by solid phase reaction. , FIG. 3 is a diagram illustrating single crystallization by the method of the present invention. 1...Medium crystal, 2...Polycrystal,
la, 2a... joint surface, 3...
The part that became single crystal from polycrystal, 4...
・Polycrystalline portion, 5......Single crystallization interface, 6......Liquid phase. Patent applicant Matsu F Electric Industry Co., Ltd. Figure 1 (Al (8) (C) Figure 2 Figure 3
Claims (2)
い組成で、かつ前記却結晶と本質的に同一の結晶構造を
有する多結晶とを接合し、この接合体を加熱保持するこ
とにより前記多結晶を単結晶化する単結晶フェライトの
製造方法において、前記単結晶および多結晶の各接合面
のうちいずれか一方または両方に、フェライトの液相焼
結を誘起する化合物の薄膜を予め膜１’Ｐ ＋μｍ以内
で形成し、その後両者の接合面を張り合わせて熱処理す
ることを特徴とする単結晶フェライトの製造方法。(1) By joining a single crystal and a polycrystal having the same composition as the single crystal or a composition close to it and having essentially the same crystal structure as the above-mentioned crystal, and heating and holding this joined body. In the method for producing single-crystal ferrite in which the polycrystal is made into a single crystal, a thin film of a compound that induces liquid phase sintering of the ferrite is previously deposited on one or both of the joint surfaces of the single crystal and the polycrystal. 1. A method for producing single crystal ferrite, which comprises forming a single crystal ferrite within 1'P + μm, and then bonding the two together and heat-treating.
として、Ｎａ０２＋ ”２０５＋ ＣａＯ＋ ＣＬＩ２
０１５ｉｏｚ、 Ｃｒの酸化物１Ｓｂ２０３ のうちか
ら１種又は２種以上を選んで用いることを特徴とする特
許請求の範囲第（１）項記載の単結晶フェライトの製造
方法。(2) As a compound that induces liquid phase sintering of the ferrite, Na02+ "205+ CaO+ CLI2
015ioz, Cr oxide 1Sb203, and one or more selected from Cr oxide 1Sb203.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58011496A JPS59141499A (en) | 1983-01-28 | 1983-01-28 | Preparation of single crystal of ferrite |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58011496A JPS59141499A (en) | 1983-01-28 | 1983-01-28 | Preparation of single crystal of ferrite |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59141499A true JPS59141499A (en) | 1984-08-14 |
Family
ID=11779635
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58011496A Pending JPS59141499A (en) | 1983-01-28 | 1983-01-28 | Preparation of single crystal of ferrite |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59141499A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6311591A (en) * | 1986-07-01 | 1988-01-19 | Matsushita Electric Ind Co Ltd | Production of single crystal ceramic |
| US5302306A (en) * | 1991-03-15 | 1994-04-12 | Sony Corporation | Process for preparing polycrystalline ferrite materials and composites containing them |
-
1983
- 1983-01-28 JP JP58011496A patent/JPS59141499A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6311591A (en) * | 1986-07-01 | 1988-01-19 | Matsushita Electric Ind Co Ltd | Production of single crystal ceramic |
| JPH0364476B2 (en) * | 1986-07-01 | 1991-10-07 | Matsushita Electric Ind Co Ltd | |
| US5302306A (en) * | 1991-03-15 | 1994-04-12 | Sony Corporation | Process for preparing polycrystalline ferrite materials and composites containing them |
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