JPS59141218A - Manufacture of thin film - Google Patents

Manufacture of thin film

Info

Publication number
JPS59141218A
JPS59141218A JP58015830A JP1583083A JPS59141218A JP S59141218 A JPS59141218 A JP S59141218A JP 58015830 A JP58015830 A JP 58015830A JP 1583083 A JP1583083 A JP 1583083A JP S59141218 A JPS59141218 A JP S59141218A
Authority
JP
Japan
Prior art keywords
substrate
atoms
amorphous silicon
mask
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58015830A
Other languages
Japanese (ja)
Inventor
Takeshi Nakamura
毅 中村
Toshihisa Hamano
浜野　利久
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Business Innovation Corp
Original Assignee
Fuji Xerox Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Xerox Co Ltd filed Critical Fuji Xerox Co Ltd
Priority to JP58015830A priority Critical patent/JPS59141218A/en
Publication of JPS59141218A publication Critical patent/JPS59141218A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation

Abstract

PURPOSE:To prevent a thin film to be formed on a substrate from inclusion of impurities by a method wherein a material consisting of atoms the same with the sputtering atoms or a material mainly consisting of atoms the same with the sputtering atoms is used as the material of the surface of a mask equipped to the substrate. CONSTITUTION:A substrate 6 to be adhered with an amorphous silicon film, and a target 7 to emit sputtering ions and confronting with the substrate 6 are arranged in a vacuum chamber 5 filled up with argon gas. Moreover, a mask 8 is equipped to the substrate 6 on the target 7 side. An amorphous silicon film 9 is formed on the mask 8 extending over the whole surface of the target 7 side excluding an opening part. The sides of the substrate 6 are cooled by liquid helium, etc. When a proper voltage is applied to the substrate 6 side and the target 7 side in such a condition, silicon atoms A are emitted from the target 7, and amorphous silicon films are adhered on the amorphous silicon film 9 and on the substrate 6. After then, by removing the mask 8, the amorphous silicon film of the desired shape is formed on the substrate 6.

Description

【発明の詳細な説明】 本発明は、薄膜の作製方法に関する。[Detailed description of the invention] The present invention relates to a method for producing a thin film.

一般に密着型イメージセンサあるいは大場電池等の光電
材料としてアモルファスシリコンが盛んに用いられてい
る。Generally, amorphous silicon is widely used as a photoelectric material for contact image sensors, Ohba batteries, and the like.

第１図はアモルファスシリコンを用いて作製したイメー
ジセンサの断面図を示す、これは、基板ｌの表面にアモ
ルファスシリコン膜２が形成され、上部電極３および下
部電極４を設置した構造となっている。FIG. 1 shows a cross-sectional view of an image sensor fabricated using amorphous silicon. This has a structure in which an amorphous silicon film 2 is formed on the surface of a substrate 1, and an upper electrode 3 and a lower electrode 4 are provided. .

この種のアモルファスシリコンの着膜の方法としてＯＶ
Ｄ　（化学反応を伴う気相成長）法による膜形成に放電
を加味したいわゆるプラズマＯＶＤ法、あるいはスパッ
タリング法などがある。これらの方法で、基板の所望の
部分にのみアモルファスシリコンを着膜させるＫは、フ
ォトリソグラフイとエツチングを用いる方法あるいはマ
スクを用いる方法等がある。このフォトリソグラフィと
エツチングを用いる方法は、前記プラズマＯＶＤ法ある
いはスパッタリング法などによって、一度は基板の全面
にわたってアモルファスシリコンを着膜させた後、該ア
モルファスシリコン膜の不要部分をフォトリングラフィ
とエツチングによって取り除くものである。また、マス
クを用いる方法は、基板にマスクを貼付して、はじめか
ら該基板の所望の部分のみにアモルファスシリコンを着
膜させるものである。OV is a method for depositing this type of amorphous silicon film.
There are the so-called plasma OVD method, in which discharge is added to film formation by the D (vapor phase growth accompanied by chemical reaction) method, and the sputtering method. These methods can be used to deposit amorphous silicon only on desired portions of the substrate, such as using photolithography and etching or using a mask. This method using photolithography and etching involves depositing an amorphous silicon film over the entire surface of the substrate by the plasma OVD method or sputtering method, and then removing unnecessary portions of the amorphous silicon film by photolithography and etching. It is something. Further, in the method using a mask, a mask is attached to a substrate and amorphous silicon is deposited only on desired portions of the substrate from the beginning.

第２図はマスクを用いてスパッタリング法によりアモル
ファスシリコン膜を作製する装置の主要部分を示した断
面図である。同図において、アルゴンで満たされた真空
室５内にアモルファスシリコンを着脱させる基板６に対
峙して、シリコン原子を放出するターゲット７が置かれ
ている。また、第３図に示すように基板６にはマスク８
が装着されている。このマスク８は基板６に作製すべき
アモルファスシリコン膜の形状に対応した開口部８ａが
設けられている。さらに、基板６の側は液体ヘリウムや
液体窒素で冷却されている。このような状態で、基板６
の側とターゲット７の側に適宜の電圧な加えると、イオ
ン化したアルゴン粒子がターゲット７に衝突し、その衝
撃でシリコン原子Ａが放出され、マスク８および基板６
上にアモルファスシリコンが着膜する。さらに、マスク
８を除去することによって基板６に所望形状のアモルフ
ァスシリコン膜が形成される。FIG. 2 is a sectional view showing the main parts of an apparatus for producing an amorphous silicon film by sputtering using a mask. In the figure, a target 7 for emitting silicon atoms is placed in a vacuum chamber 5 filled with argon, facing a substrate 6 on which amorphous silicon is attached and detached. Further, as shown in FIG. 3, a mask 8 is provided on the substrate 6.
is installed. This mask 8 is provided with an opening 8a corresponding to the shape of the amorphous silicon film to be formed on the substrate 6. Further, the substrate 6 side is cooled with liquid helium or liquid nitrogen. In this state, the board 6
When an appropriate voltage is applied to the side of the mask 8 and the side of the target 7, ionized argon particles collide with the target 7, and the impact releases silicon atoms A, causing the mask 8 and the substrate 6 to
Amorphous silicon is deposited on top. Furthermore, by removing the mask 8, an amorphous silicon film having a desired shape is formed on the substrate 6.

ところで、マスク８の材料としては、従来ステンレスが
多く用いられていたが、当然のことながらターゲット７
から放出されたシリコン原子ムは、マスク８にも衝突し
、該マスク８から原子Ｂが放出される。このマスク８か
ら放出された原子Ｂは基板６に形成されつつあるアモル
ファスシリコン膜中に不純物として取り込まれる。この
ため、上述したマスクを用いた方法によって前記第１図
に示したようなイメージセンサを作製すると、前記アモ
ルファスシリコン膜（３） 中に取り込まれた不純物が原因となって、該イメージセ
ンナの緒特性の劣化、さらに欠陥を生じるという問題が
あった。なお、アモルファスシリコン膜に限らず、上記
マスクを用いた方法で薄膜を形成する場合には、その薄
膜にマスク材から放出される原子が混入するため、スパ
ッタ原子のみからなる純粋な薄膜を形成することが困難
であった。By the way, stainless steel has traditionally been widely used as the material for the mask 8, but as a matter of course, the material for the target 7
The silicon atoms emitted from the mask also collide with the mask 8, and atoms B are emitted from the mask 8. Atoms B emitted from this mask 8 are incorporated into the amorphous silicon film being formed on the substrate 6 as impurities. Therefore, when an image sensor as shown in FIG. 1 is manufactured by the method using the above-mentioned mask, impurities incorporated into the amorphous silicon film (3) cause the image sensor's original appearance. There was a problem of deterioration of characteristics and generation of defects. Note that when forming a thin film, not only an amorphous silicon film, by the method using the above mask, atoms emitted from the mask material are mixed into the thin film, so a pure thin film consisting only of sputtered atoms is formed. It was difficult.

本発明は上記実情Ｋｆａみてなされたもので、基板上に
形成される薄膜中に該薄膜に対する不純物の混入を極力
防ぐような薄膜の作製方法を提供することを目的とする
。The present invention has been made in view of the above-mentioned actual situation Kfa, and an object of the present invention is to provide a method for manufacturing a thin film that can prevent impurities from being mixed into the thin film formed on a substrate as much as possible.

そこで本発明では、予めマスクのスパッタ原子が衝突す
る側の少な（とも表面全体にわたってスパッタ原子と同
一の原子からなる材料あるいはスパッタ原子と同一の原
子を主構成要素とする材料によって薄膜を形成し、これ
を用いて基板上に形成される薄膜に該薄膜に対する不純
物が取り込まれないようＫする。Therefore, in the present invention, a thin film is formed in advance on the side of the mask where the sputtered atoms collide (both over the entire surface) with a material made of the same atoms as the sputtered atoms, or a material whose main constituent is the same atoms as the sputtered atoms, This is used to prevent impurities from being incorporated into the thin film formed on the substrate.

以下、本発明の□一実施例を添付図面を参照しく４　） て詳細に説明する。Hereinafter, please refer to the attached drawings for an embodiment of the present invention 4) This will be explained in detail.

第４図は本発明に係る薄膜の作製方法を適用してアモル
ファスシリコン膜な作製した一実施例を示す。なお、第
４図において第２図と同様の機能を果たす部分について
は同一の符号を用いている。FIG. 4 shows an example in which an amorphous silicon film was manufactured by applying the thin film manufacturing method according to the present invention. In FIG. 4, the same reference numerals are used for parts that perform the same functions as in FIG. 2.

アルゴンガスで満たされた真空室５内にはアモルファス
シリコン１着膜させる基板６と該基板６に対峙してスパ
ッタイオンを放出するターゲット７が配設されている。In a vacuum chamber 5 filled with argon gas, a substrate 6 on which amorphous silicon 1 is deposited and a target 7 facing the substrate 6 and emitting sputtering ions are disposed.

また、基板６には該ターゲット７側に適宜形状の開口部
８ａを有するマスクが装着されている。このマスク８は
、予め開口部３ａを除くターゲット７側の全面にわたっ
て約５００１の厚さでアモルファスシリコン膜９が形成
され【いる、なお、基板６の側は液体ヘリウムあるいは
液体窒素などによって冷却されている１以上のような状
態で基板６の側とターゲット７の側に適宜の電圧を加え
ると、ターゲット７からシリコン原子ムが放出され、ア
モルファスシリコン膜９および基板６上にアモルファス
シリコンカ着膜する。サラに、マスク８を除去すること
によって基板６に所望形状のアモルファスシリコン膜が
形成される。Further, a mask having an appropriately shaped opening 8a on the target 7 side is attached to the substrate 6. This mask 8 has an amorphous silicon film 9 formed in advance with a thickness of about 500 mm over the entire surface of the target 7 side excluding the opening 3a.The substrate 6 side is cooled with liquid helium, liquid nitrogen, etc. When an appropriate voltage is applied to the substrate 6 side and the target 7 side in the above state, silicon atoms are emitted from the target 7 and an amorphous silicon film is deposited on the amorphous silicon film 9 and the substrate 6. . By gently removing the mask 8, an amorphous silicon film having a desired shape is formed on the substrate 6.

次に、従来のステンレスおよび本発明によるアモルファ
スシリコンを着膜したステンレスをマスクとしてそれぞ
れ用いアモルファスシリコン膜を形成し、適宜の方法に
よって電極を配設してイメージセンサを作製し、該作製
したイメージセンサについて欠陥の発生数を求めた結果
について説明する。作製したイメージセンサは前記第１
図に示したサンドウィッチ構造のイメージセンサで、こ
れを基板上に多数（１０５６）個配役したものを各帽子
ンブルづつ作製し、該サンプルについて一つ一つ欠陥の
発生有無をチェックし、欠陥の発生個数を調べた。その
結果を第１表に示す。Next, an amorphous silicon film is formed using conventional stainless steel and stainless steel coated with amorphous silicon according to the present invention as a mask, and electrodes are provided by an appropriate method to produce an image sensor. We will explain the results of determining the number of defects that occur. The produced image sensor is
A large number (1056) of the sandwich-structured image sensors shown in the figure were placed on a substrate and each sample was fabricated, and the samples were checked one by one for the occurrence of defects. I checked the number. The results are shown in Table 1.

第１表から明らかなように、アモルファスシリコンを着
膜したステンレスのマスクラ用いた場合は、イメージセ
ンサの欠陥の発生は非常に少ない。また、上記実施例で
は、ステンレスのマスク表面にアモルファスシリコン膜
を形成したが、これに限らず窒化シリコン（８１ｓＮ＋
）あるいは酸化シリコン（ＥｌｉＯ，）などスパッタ原
子と同一の原子を含む材料を用いてもよい。As is clear from Table 1, when a stainless steel masker coated with amorphous silicon is used, there are very few defects in the image sensor. Further, in the above embodiment, an amorphous silicon film was formed on the surface of a stainless steel mask, but the film is not limited to this.
) or silicon oxide (EliO, ), a material containing the same atoms as sputtered atoms may be used.

なお、本実施例ではスパッタリング法によって基板上に
所望形状のアモルファスシリコン膜を形成したがプラズ
マＯＶＤ法を用いて形成してもよい。In this embodiment, the amorphous silicon film having a desired shape was formed on the substrate by sputtering, but it may also be formed by plasma OVD.

また、基板上に形成する薄膜はアモルファスシリコン膜
に限らず、本発明による方法によって適宜材質の薄膜を
作製することができる。Further, the thin film formed on the substrate is not limited to an amorphous silicon film, and a thin film of any suitable material can be formed by the method according to the present invention.

また、スパッタ原子と同一の原子からなる材料またはス
パッタ原子と同一の原子を含む材料をステンレス等のマ
スク表面に形成して薄膜を形成する以外に、マスクその
ものをスパッタ原子と同一の原子からなる材料またはス
パッタ原〔７） 子と同一の原子を含む材料によって形成してもよい。In addition to forming a thin film by forming a material made of the same atoms as the sputtered atoms or a material containing the same atoms as the sputtered atoms on the surface of a mask such as stainless steel, the mask itself can be made of a material made of the same atoms as the sputtered atoms. Alternatively, it may be formed of a material containing the same atoms as the sputter source [7].

以上、説明したように本発明によれば基板に装着したマ
スクの少なくともその表面の材料としてスパッタ原子と
同一の原子からなる材料またはスパッタ原子と同一の原
子を主構成要素とする材料を使用することＫよって、基
板上に形成される薄膜に該薄膜に対する不純物の混入を
防ぐことができる。As described above, according to the present invention, a material consisting of the same atoms as sputtered atoms or a material whose main constituent is the same atoms as sputtered atoms is used as the material for at least the surface of the mask attached to the substrate. Therefore, it is possible to prevent impurities from being mixed into the thin film formed on the substrate.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図はイメージセンサの断面図、第２図はステンレス
をマスクとして用いたアモルファスシリコン膜の作製装
置、第３図は第２図の基板６にマスク８をかぶせた状態
を示す平面図、第４図は本発明に係るアモルファスシリ
コン膜の作製方法を適用したアモルファスシリコン膜の
作製装置の断面図を示す。 １．６・・・ｉ板、２．９・・・アモルファスシリコン
膜１３．４・・・電極、５・・・真空室、７・・・ター
ゲット、８・・・マスク。 （８） 第１図 第２図FIG. 1 is a cross-sectional view of an image sensor, FIG. 2 is an amorphous silicon film manufacturing apparatus using stainless steel as a mask, FIG. FIG. 4 shows a cross-sectional view of an amorphous silicon film manufacturing apparatus to which the amorphous silicon film manufacturing method according to the present invention is applied. 1.6... i-plate, 2.9... amorphous silicon film 13.4... electrode, 5... vacuum chamber, 7... target, 8... mask. (8) Figure 1 Figure 2

Claims (4)

【特許請求の範囲】[Claims] （１）基板上にマスクを装着し、スパッタ原子を前記基
板上に付着させた後、前記マスク材を除去し、前記基板
上に所望形状の薄膜を形成する薄膜の作製方法において
、前記マスクの少なくともその表面の材料として前記ス
パッタ原子と同一の原子からなる材料またはスパッタ原
子と同一の原子を主構成要素とする材料を使用し、薄膜
中に不純物の混入を防止するようにしたことを特徴とす
る薄膜の作製方法。(1) A method for producing a thin film in which a mask is mounted on a substrate, sputtered atoms are attached to the substrate, and then the mask material is removed to form a thin film in a desired shape on the substrate. A material made of the same atoms as the sputtered atoms or a material whose main constituent is the same atoms as the sputtered atoms is used at least as a material for the surface thereof, thereby preventing impurities from being mixed into the thin film. A method for producing thin films. （２）前記スパッタ原子と同一の原子を主構成要素とす
る材料は、アモルファスシリコンである特許請求の範囲
第（１）項記載の薄膜の作製方法。(2) The method for producing a thin film according to claim (1), wherein the material whose main constituent is the same atom as the sputtered atom is amorphous silicon. （３）前記スパッタ原子と同一の原子を主構成要素とす
る材料は、窒化シリコンである特許請求の範囲第（１）
項記載の薄膜の作製方法。(3) The material mainly composed of the same atoms as the sputtered atoms is silicon nitride.
A method for producing a thin film described in Section 1. （４）前記スパッタ原子と同一の原子を主構成要素とす
る材料は、二酸化シリコンである特許請求の範囲第（１
）項記載の薄膜の作製方法。(4) The material whose main constituent is the same atom as the sputtered atom is silicon dioxide.
) The method for producing the thin film described in item 2.
JP58015830A 1983-02-02 1983-02-02 Manufacture of thin film Pending JPS59141218A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58015830A JPS59141218A (en) 1983-02-02 1983-02-02 Manufacture of thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58015830A JPS59141218A (en) 1983-02-02 1983-02-02 Manufacture of thin film

Publications (1)

Publication Number Publication Date
JPS59141218A true JPS59141218A (en) 1984-08-13

Family

ID=11899762

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58015830A Pending JPS59141218A (en) 1983-02-02 1983-02-02 Manufacture of thin film

Country Status (1)

Country Link
JP (1) JPS59141218A (en)

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