JPS59139002A - Process for preparing original plate for microprism - Google Patents

Process for preparing original plate for microprism

Info

Publication number
JPS59139002A
JPS59139002A JP1418183A JP1418183A JPS59139002A JP S59139002 A JPS59139002 A JP S59139002A JP 1418183 A JP1418183 A JP 1418183A JP 1418183 A JP1418183 A JP 1418183A JP S59139002 A JPS59139002 A JP S59139002A
Authority
JP
Japan
Prior art keywords
film
etching
microprism
layer
original plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1418183A
Other languages
Japanese (ja)
Inventor
Hideo Kanbe
秀夫 神戸
Masayuki Tatewaki
舘脇 政行
Hiroyuki Matsumoto
松本 博行
Kazuaki Ogawa
和明 小川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP1418183A priority Critical patent/JPS59139002A/en
Publication of JPS59139002A publication Critical patent/JPS59139002A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/04Prisms
    • G02B5/045Prism arrays

Abstract

PURPOSE:To obtain a microprism having a sufficiently small inclination by forming a multilayer film consisting of >= two layers having each an etching rate higher than each succeeding lower layer, on a substrate to form pyramidal projections and recessions by etching. CONSTITUTION:An SiO2 film 2 is formed on an Si substrate 1 by the CVD process, the film is heat-treated for a specified time, then a second SiO2 film 3 to be etched is formed by the CVD process on the film 2 and heat-treated. Similarly, a third and a fourth SiO2 films 4, 5 are formed successively thereon by the CVD process and heat-treated. The heat treatment is performed in such a manner that each SiO2 film 2-5 exhibits different etchability for an HF etching liquid, namely, that each lower layer film exhibits smaller etchability than each adjacent upper layer film. Then, a photoresist film as a masking layer 6 is deposited on the film 5; plural square windows 7 arranging longitudinally and laterally are formed thereon by the exposure and development. Finally, recessions 8 are formed by etching.

Description

【発明の詳細な説明】 産業上の利用分野 本発明はいわゆる1眼レフカメラ或いはビデオカメラ等
の光学ファインダーの測距離用の焦点板或いは固体撮像
体上に配置されるマイクロ集光レンズ等に用いるマイク
ロプリズムを得るためのマイクロプリズム用原板の製造
方法に係わる。
DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention is used for a focusing plate for distance measurement of an optical finder of a so-called single-lens reflex camera or a video camera, or a micro condenser lens arranged on a solid-state image pickup body. The present invention relates to a method for manufacturing a microprism original plate for obtaining a microprism.

背景技術とその問題点 1眼レフカメラやビデオカメラの光学ファインダーの測
距離用にマイクロプリズム焦点板が用いられるものが考
えられている。この焦点板は一定の傾角をもつ微小プリ
ズム素体となる多数の例えば四角錐体が一面に敷設され
てなるものでこのような構成による場合、空中像でピン
ト合せをすることなく光束を有効に活用でき、このため
視野が暗くなることなく測距離精度が高いという利点が
ある。
BACKGROUND TECHNOLOGY AND PROBLEMS The use of microprism focus plates for distance measurement in optical viewfinders of single-lens reflex cameras and video cameras has been considered. This reticle is made up of a large number of square pyramids, for example, which serve as microprism bodies with a constant inclination angle. With this configuration, the light beam can be effectively used without focusing using an aerial image. This has the advantage of high distance measurement accuracy without darkening the field of view.

また、固体撮像装置においてその固体撮像板上における
微、J\レンズを各絵素に対応して形成し、集光するこ
とで実効的な開口率を高め感度の向上を図るようにした
ものが考えられている。
In addition, in a solid-state imaging device, a microlens is formed on the solid-state imaging plate corresponding to each pixel, and by focusing light, the effective aperture ratio is increased and sensitivity is improved. It is considered.

このような焦点板としての或いは集光レンズとしてのマ
イクロプリズムはいずれもそのプリズム素体として3次
元的高精度の微細パターン加工技術を必要とするもので
ある。
Such microprisms used as focusing plates or condensing lenses each require a three-dimensional highly accurate fine pattern processing technique for the prism element.

通常この種マイクロプリズムを得るには最終的に得るマ
イクロプリズムの凹凸、すなわち各微細のマイクロプリ
ズム素体に対応する凹凸を有する金型を機械加工によっ
て形成し、この金型によってプラスチック板をプレス加
工して得るという方法が採られる。ところが通常この金
型においては、そのプリズム素体を形成する凹凸のピッ
チを充分小さく形成することができず、またその傾角す
なわち例えば錐体状凹凸の底角(底辺に対する傾斜角)
θは15°〜200となシ、底角θが7°前後というよ
うな上述した焦点板或いは集光プリズムとしてのマイク
ロプリズムにおいて要求される小さい角度のものが得ら
れず、またそのピッチも充分小さいものが得られないと
いう欠点がある。
Normally, to obtain this kind of microprism, a mold is formed by machining, which has irregularities corresponding to the irregularities of the final microprism, that is, each microprism element, and a plastic plate is pressed using this mold. The method used is to obtain it by doing so. However, in this mold, it is usually not possible to form the pitch of the concavities and convexities that form the prism body to be sufficiently small, and the inclination angle, for example, the base angle (inclination angle with respect to the base) of the conical concavities and convexities, cannot be formed sufficiently small.
θ is 15° to 200°, and the base angle θ is around 7°, which is a small angle required for the above-mentioned focusing plate or microprism as a condensing prism, and the pitch is also insufficient. The disadvantage is that small items cannot be obtained.

発明の目的 本発明においては簡単な方法によって最終的に充分小さ
い傾角すなわち底角θ、例えば7°前後以下の例えば6
°を有するマイクロプリズムを得ることのできるマイク
ロプリズム用原板の製造方法を提供するものである。
Purpose of the Invention In the present invention, a sufficiently small inclination angle, that is, a base angle θ, for example, around 7° or less, for example 6
The object of the present invention is to provide a method for manufacturing a microprism original plate that can obtain microprisms having an angle of .degree.

発明の概要 本発明はNi或いは石英等の基板上に2層以上多層α膜
を形成する。これら膜、すなわち上層膜及び下層膜は、
そのエツチング性が相違し、例えば同一エツチング液に
対する上層膜のエツチング速度が下層膜のエツチング速
度よυ犬である性質を有する膜によって構成し、上層膜
上に更にエツチングレジストとなυマイクロプリズムの
プリズム素体に対応するピッチをもって形成した窓を有
すルエッチングマスクを被着形成し、このエツチングマ
スクの窓を通じて上述した上層及び下層に対するエツチ
ングを行って両者のエツチングの差によって錐体状例え
ば断正四方形の四角錐状の凹部を形成し、これらの集合
によって全体として錐体状凹凸が一面に形成したマイク
ロプリズム用原板を得るものである。
Summary of the Invention The present invention forms a multilayer α film of two or more layers on a substrate such as Ni or quartz. These films, namely the upper layer film and the lower layer film, are
The prism of the υ microprism is composed of films whose etching properties are different, for example, the etching rate of the upper layer film with the same etching solution is similar to that of the lower layer film, and an etching resist is further applied on the upper layer film. An etching mask having windows formed with a pitch corresponding to the element body is deposited, and the above-mentioned upper and lower layers are etched through the windows of this etching mask, and the etching difference between the two forms a pyramidal shape, for example, a truncated square. A rectangular pyramid-shaped concave portion is formed, and by aggregating these concave portions, a microprism original plate having conical concavities and convexities formed on one surface as a whole is obtained.

尚、このようにして得たマイクo 7’ リズム用・原
板によってマイクロプリズムを作製するには先ず例えば
このマイクロプリズム用原板上にNi1又はCr等の比
較的厚い金属めっきを施す。このNi、又はCr等の金
属めっきは、例えば無電解めっきを施して後所賛の厚さ
に電気めっきを施すという方法を採るか、或いは原板上
にCu等を蒸着してその表面に導電性を付与させて後に
これの上に電気めっきによって所要の厚さのNi或いは
Cr等の金属めっき層を形成する。この場合のめっき層
の厚さは、原板の凹凸の深さは例えば1μm程度の小さ
いものであるがこれよシ充分大きな例えば15m+程度
の厚さに形成する。尚、Ni或いはCrのめっきに先立
って例えばこの下地層のCuの蒸着膜表面に対して離型
処理を施し置くものとし、これによってこのN1或いは
Crのめつき層を原板から剥離して原板の凹凸が転写さ
れた凸凹面を有する金属マスターを得る。そして更にこ
の金属マスターに、同様に剥離処理を施して、Ni 、
 Cr等の金属めっきをなし、これを剥離することによ
って原板と同一凹凸・リーンを有する型板を得て、この
型板によって例えばアクリル樹脂等のプラスチック板を
軟化させた状態で成型するとかモールド成型してマイク
ロプリズムを得るものである。
In order to produce a microprism using the microphone o 7' rhythm original plate thus obtained, first, for example, relatively thick metal plating such as Ni1 or Cr is applied to the microprism original plate. For this metal plating such as Ni or Cr, for example, electroless plating is performed and then electroplating is applied to the desired thickness, or Cu, etc. is vapor deposited on the original plate and the surface is made conductive. After that, a metal plating layer of Ni or Cr or the like is formed to a desired thickness by electroplating. In this case, the thickness of the plating layer is sufficiently large, for example, about 15 m+, although the depth of the irregularities on the original plate is small, for example, about 1 μm. In addition, prior to Ni or Cr plating, for example, a mold release treatment is applied to the surface of the Cu vapor deposited film of this base layer, whereby this N1 or Cr plated layer is peeled off from the original plate and the original plate is removed. A metal master having an uneven surface to which the unevenness is transferred is obtained. Furthermore, this metal master was subjected to a similar peeling treatment, and Ni,
By plating metal such as Cr and peeling it off, a template with the same unevenness and lean as the original plate is obtained, and this template is used to mold, for example, a plastic plate such as acrylic resin in a softened state, or molding. A microprism is obtained by doing this.

実施例 次に本発明の一例を第1図ないし第4図を参照して詳細
に説明する。先ず、第1図に示すように例えばSt基板
(1)を設け、これの上に化学的気相成長法(CVD法
)によって5IO2をデポジットとして第1の被エツチ
ング8102膜(2)を被着形成する。そしてこれに対
して所定時間t1の熱処理を行う。そしてこの第1の8
102膜(2)上に同様にCVD法によって第2の被エ
ツチングSlO□膜(3)を被着形成し、これに対して
所定時間t2の熱処理を行う。このようにして順次これ
の上に同様に第3及び第4の被エツチング5xo2膜(
4)及び(5)を順次CVD法によって被着し、夫々の
膜に対して夫々所定時間t3及びt4の熱処理を行う。
EXAMPLE Next, an example of the present invention will be explained in detail with reference to FIGS. 1 to 4. First, as shown in FIG. 1, for example, an St substrate (1) is provided, and a first 8102 film (2) to be etched is deposited on this by chemical vapor deposition (CVD) using 5IO2 as a deposit. Form. Then, heat treatment is performed on this for a predetermined time t1. And this first 8
A second SlO□ film (3) to be etched is similarly deposited on the 102 film (2) by the CVD method, and is subjected to heat treatment for a predetermined time t2. In this way, the third and fourth 5xO2 films to be etched (
4) and (5) are sequentially deposited by CVD, and each film is subjected to heat treatment for predetermined times t3 and t4, respectively.

この場合、各第1〜第4の層(2)〜(5)の被着後に
おける熱処理条件例えば熱処理時間t1〜t4、或いは
加熱温度を変化させることによって夫々の層(2)〜(
5)がこれらに対するエツチング液例えば弗化水素系エ
ツチング液に対して異なるエツチング性を示すように、
具体的には上層の膜に比し、これよシ下層の膜のエツチ
ング速度が順次低くなるようにする。すなわち例えば各
層に対する熱処理を下層の層に対する熱処理温度はど高
い温度例えば最下層の膜(2)に対して1000℃、最
上層の膜(5)に対して700℃にその熱処理温度を選
定してこれら1000℃〜700℃の間で各中間の層(
3)及び(4)を漸次上層に向かうほど低い温度となす
ように選定する。
In this case, the heat treatment conditions after deposition of each of the first to fourth layers (2) to (5), such as the heat treatment time t1 to t4, or the heating temperature, can be changed to form the respective layers (2) to (5).
5) shows different etching properties with respect to etching solutions such as hydrogen fluoride-based etching solutions.
Specifically, the etching rate of the lower layer film is made lower than that of the upper layer film. That is, for example, the heat treatment temperature for each layer is selected to be as high as the heat treatment temperature for the lower layer, for example, 1000°C for the bottom layer (2) and 700°C for the top layer (5). Each intermediate layer (
3) and (4) are selected so that the temperature gradually decreases toward the upper layer.

次に第2図に示すように最上層の膜(5)上にエツチン
グレジストとなるマスク層(6)例えばフォトレジスト
膜をを被着し、これに対して露光現像処理を施して所要
の間隔と幅を有する例えば正四方形状の複数の窓(7)
をたて、よこに配列穿設する。
Next, as shown in FIG. 2, a mask layer (6), such as a photoresist film, which becomes an etching resist is deposited on the uppermost film (5), and the mask layer (6), for example, a photoresist film, is applied to the uppermost film (5), and is exposed and developed to create the required spacing. For example, a plurality of square windows (7) having a width of
erect and drill holes horizontally.

次に第3図に示すように、このエツチングレジスト、す
なわちマスク層(6)の窓(7)を通じて各層(5)(
4) (3) (2)に対してエツチングを行って凹部
(8)を形成する。この場合、この凹部(8)の形成は
例えば弗化アンモニウムと弗酸が100 : 12(重
a4部)に選定した弗化水素系エツチング液によってエ
ツチングし得る。このようにすると上層の膜はどそのエ
ツチング速度が速いので横方向(面方向)へのエツチン
グの進行度も上層はど犬となって全体として上に向って
広がる傾斜面を有する四部(8)が形成されるが、この
場合、そのエツチングが隣り合う窓(7)の中央下で各
層(7)からのエツチングがぶつかシ合う時点でそのエ
ツチングを停止すオ弘ば錐−林状の凹部(8)が余すと
ころなく敷設形成される。すなわち例えば懇(7)が正
方形等の四角形に選ばれる場合には四角錐体状の凹部゛
(8)が各層(5) (4) (3) (2)の厚み方
向に渡って形成することができる。
Next, as shown in FIG. 3, each layer (5) (
4) (3) Perform etching on (2) to form a recess (8). In this case, the recess (8) can be formed by etching, for example, using a hydrogen fluoride etching solution containing ammonium fluoride and hydrofluoric acid at a ratio of 100:12 (4 parts of heavy A). In this way, since the etching speed of the upper layer film is fast, the progress of etching in the lateral direction (plane direction) is also reduced. However, in this case, the etching stops when the etchings from each layer (7) collide under the center of the adjacent windows (7). (8) is completely laid and formed. In other words, for example, if the shape (7) is selected to be a quadrangle such as a square, a quadrangular pyramid-shaped recess (8) should be formed across the thickness direction of each layer (5), (4), (3), and (2). I can do it.

その後、第4図に示すようにエツチングレジスト膜(6
)を除去すれば目的とする錐体状凹凸が表面に形成され
たマイクロプリズム用原板(9)が得られる。
After that, as shown in FIG. 4, an etching resist film (6
), a microprism original plate (9) having the desired cone-shaped irregularities formed on its surface can be obtained.

尚、上述した例においては第、1〜第4の膜(2)〜(
5)を夫々CVD法によるS 102膜によって形成し
た場合でおるが、例えばこの5i02膜中にリンP、ボ
ロンBをドーグしたフォスフアシリケードグラス或いは
ボロンシリケートグラスを用いることもでき、更にはC
VD法に限らず蒸着、スパッタ等によって各層(2)〜
(5)を形成することもできるし、またこれら膜(2)
〜(5)として例えばプラズマCVD法による513N
4膜によって形成することもできる。この場合は、凹部
(8)の形成のためのエツチングはいわゆるエツチング
液によるウェットエッチに限らずプラズマエツチング法
等を適用することもできる。
In addition, in the above-mentioned example, the first to fourth films (2) to (
5) are each formed by a S102 film by CVD method, but for example, phosphor silicate glass or boron silicate glass in which phosphorus P and boron B are doped in this 5i02 film can also be used.
Each layer (2) ~ not only by VD method but also by vapor deposition, sputtering, etc.
(5) can also be formed, and these films (2) can also be formed.
~(5), for example, 513N by plasma CVD method
It can also be formed by four films. In this case, the etching for forming the recesses (8) is not limited to so-called wet etching using an etching solution, but a plasma etching method or the like may also be applied.

また、上述した例においてはエツチングによって凹部を
形成する膜を第1〜第4の膜(2)〜(5)の4層構造
とした場合であるが2層以上、必要に応じた任意の層数
とすることができる。また上述した例においては第1〜
第4の層(2)〜(5)に対するエツチング速度の差を
形成するために熱処理条件を変更させた場合であるが例
えばこれらの層を夫々異る材料或いはリン、がロン等を
イオン注入して厚さ方向に関してその濃度を変えてエツ
チング速度を変更するようにした構成とすることもでき
る。
In addition, in the above example, the film forming the recessed portion by etching has a four-layer structure of the first to fourth films (2) to (5), but it is also possible to use two or more layers, or any layer as necessary. It can be a number. In addition, in the above example, the first to
This is a case where the heat treatment conditions are changed to create a difference in etching rate for the fourth layers (2) to (5). It is also possible to adopt a configuration in which the etching rate is changed by changing the concentration in the thickness direction.

第5図及び第6図を参照して本発明の詳細な説明する。The present invention will be described in detail with reference to FIGS. 5 and 6.

この例においては第5図に示すように例えばSi基板(
1)を設け、例えばこれの表面を熱酸化することによっ
て例えば厚さ5750 Xの第1の被エツチング5tO
2膜(6)を形成し、これの上にこの、SiO2膜(6
)に対するエツチング液に対してこれよりそのエツチン
グ速度の早い例えばシんPが比抵抗ρ8が8Ω・副程度
となるようにドープされた第2の被エツチングシリケー
トガラス層α3を1000 Xの厚さにCVD法によっ
て形成する。そして、これの上に、エツチングレジスト
となるフォトレジスト等のマスク層(6)を被着形成す
るものであるがこの場合、フォトレジスト(6)の膜α
→に対する被着強度カ低いことからフォトレジストとの
被着性にすぐれた例えば5102膜α埠をCVD法等に
よって1000Xの厚さに被着形成し、これの上にフォ
トレジストのマスク層(6)を塗布し、露光、現像して
所要の形状、大きさ8間隔をもって多数の窓(7)を穿
設するうそして、この窓(7)を通じて弗化水素系エツ
チング液によって膜αQ−α→−(L埠に対してエツチ
ングする。
In this example, as shown in FIG.
1), and by thermally oxidizing the surface thereof, for example, a first etching target 5tO having a thickness of 5750× is formed.
2 film (6) is formed, and on top of this, this SiO2 film (6) is formed.
) A second silicate glass layer α3 to be etched is doped to a thickness of 1000× with a film P whose etching speed is faster than that of the etching solution used for etching. Formed by CVD method. Then, a mask layer (6) such as a photoresist which becomes an etching resist is deposited on this. In this case, the film α of the photoresist (6) is formed.
For example, a 5102 film α, which has excellent adhesion with photoresist because of its low adhesion strength against ), exposed and developed to form a large number of windows (7) with the required shape and size at 8 intervals, and then the film αQ-α→ - (Etching for L-build.

このようにすると前述したと同様に、下層膜(12に比
し上層膜α葎の方がそのエツチング速度が早いことから
上に向って広がる凹部(8)が第5図中鎖線図示のよう
に形成される。そしてこの場合においても、隣シ合う窓
(7)の中央下で各層(力からのエツチングがぶつかυ
合う時点でそのエツチングを停止すれば、錐体状の凹部
(8)が余すところなく敷設形成される。その後、水洗
処理を施すと、エツチングによって浮き上ったフォトレ
ジストの膜(6)が除去され第6図に示すように、表面
に錐体状凹凸が形成されたプリズム原板(9)が得られ
る。尚、このようにして得た凹部(8)の傾角θは5.
9°であった。
In this way, as described above, since the etching speed of the upper layer film (α) is faster than that of the lower layer film (12), the concave portion (8) that spreads upward is formed as shown by the chain line in FIG. In this case as well, each layer (etching from the force collides υ
If the etching is stopped at the point where they are aligned, the cone-shaped recess (8) will be completely formed. Thereafter, by washing with water, the photoresist film (6) lifted up by etching is removed, resulting in a prism original plate (9) with cone-shaped irregularities formed on its surface, as shown in Figure 6. . Incidentally, the inclination angle θ of the recessed portion (8) thus obtained is 5.
It was 9°.

尚、第1図〜第4図で説明した例においても、また第5
図及び第6図で説明した例においても、その凹部(8)
の底部(頂角)は、基板(1)の表面より上方の被エツ
チング膜としての、膜(2)或いはα望に存在するよう
に各被エツチング膜の厚さを選定し置くときは、凹部の
底部が截頭錐体にならないようにすることができる◇ 発明の効果 上述したように本発明におしてはエツチング性の異る2
層以上の層を基板上に形成することによってエツチング
によって錐体状の凹凸を形成するようにしたので所要の
傾角θを有する凹凸錐体をエツチング速度の変化を適当
に選定することによって任意に選定できるものであシ、
実際上、上述したようにこのθは7°前後以下の5.9
°という小さい角度に形成し得た。
Note that in the examples explained in FIGS. 1 to 4, the fifth
Also in the example explained in Fig. 6 and Fig. 6, the recess (8)
When selecting the thickness of each film to be etched so that it exists in the film (2) or the film to be etched above the surface of the substrate (1), the bottom (apex angle) of ◇ Effects of the Invention As mentioned above, in the present invention, two different types of etching properties are used.
Since cone-shaped unevenness is formed by etching by forming more than one layer on a substrate, a conical cone having a desired inclination angle θ can be arbitrarily selected by appropriately selecting a change in etching speed. If it's possible,
In reality, as mentioned above, this θ is around 7° or less, which is 5.9
It was possible to form the angle at a small angle of °.

このように本発明においては簡単に所要の傾角を有する
凹凸を形成することができるので、この原板(9)は、
これによって先に述べたような固体撮像体における集光
レンズ系或いは光学ファインダーの焦点板等のマイクロ
プリズムを得る場合に適用して好適なものである。
In this way, in the present invention, it is possible to easily form the unevenness having the required angle of inclination, so this original plate (9)
This makes it suitable for use in obtaining a microprism for a condensing lens system in a solid-state image pickup body or a focus plate for an optical finder as described above.

【図面の簡単な説明】[Brief explanation of drawings]

第1図ないし第4図は本発明によるマイクロプリズム用
原板の製造方法の一例の各工程の路線的拡大断面図、第
5図及び第6図は他の例の各工程の路線的拡大断面図で
ある。 (9)は本発明による原板、(1)はその基板、(2)
〜(5)。 (至)(ロ)は被エツチング膜、(6)はエツチング用
レジストとしてのマスク層、(7)はそのエツチング窓
、(8)はエツチングによる凹部である。 第1図 第1図 第5図 第6図 手続補正書 昭和58年3 月 24日 特許庁長官 若 杉 和 夫 殿 (特許庁審判長           殿)1、事件の
表示 昭和58年特許願第 14181  号ビシ四り   
     ン シゲンバン セイゾクホクホク2・発明
ノ名’rfr 微小プリズム素子原板の製造方法3、補
正をする者 事件との関係   特許出願人 住所 東京部品用区北品用6丁目7番35号名称(21
8)  ソニー株式会社 代表取締役 大 賀 典 雄 4、代 理 人 東京都新宿区西新宿1丁目8番1号(
新宿ビル)6、補正により増加する発明の数 嘘、!−,,,\ (2)明細書中特許請求の範囲を別紙のように補正する
。 (3)同、第1頁、14〜15行「用いる・・・・・係
わる。」を「用いるマイクロレンズ、マイクロプリズム
等の微小光学素子を得るための微小光学原板の製造方法
に係わる。」と訂正する。 (4)同、第2頁、14行「この種」を「この種の」と
訂正する。 (5)同、第3頁、6行「得られず、」を「得られにく
く、」と訂正する。 (6)同、同頁、11〜12行F6°を有する・・・・
製造方法」を「6°を有する微小光学素子(マイクロプ
リズム、マイクロレンズ等)を得ることのできる微小光
学素子原板の製造方法」と訂正する。 (7)  同、第12頁、1行「マイクロプリズム」を
「微小光学素子」と訂正する。 (8)同、同頁、4〜5行「マイクロプリズム用」を「
微小光学素子」と訂正する。 以   上 特許請求の範囲 基板上に上層膜のエツチング速度カー下層膜のエツチン
グ速度より犬である2層以上の多層膜を形成し、エツチ
ングを行って錐体状凹凸を形成することを特徴とする微
小プリズム素子原板の製造方法。
FIGS. 1 to 4 are enlarged sectional views of each step in one example of the method for manufacturing a microprism original plate according to the present invention, and FIGS. 5 and 6 are enlarged sectional views of each step in other examples. It is. (9) is the original plate according to the present invention, (1) is its substrate, (2)
~(5). (To) (B) is a film to be etched, (6) is a mask layer as an etching resist, (7) is an etching window thereof, and (8) is a recessed portion due to etching. Figure 1 Figure 1 Figure 5 Figure 6 Procedural amendment March 24, 1980 Kazuo Wakasugi, Commissioner of the Patent Office (Chief Judge of the Patent Office) 1. Indication of the case Patent Application No. 14181 of 1988 Bishi fourri
N Shigenban Seizoku Hoku Hoku 2 Invention name 'rfr Manufacturing method of micro prism element original plate 3, relationship with the case of the person making the amendment Patent applicant address 6-7-35, Kitashina, Tokyo Parts Ward Name (21
8) Sony Corporation Representative Director Norio Ohga 4, Agent 1-8-1 Nishi-Shinjuku, Shinjuku-ku, Tokyo (
Shinjuku Building) 6. The number of inventions will increase due to correction, lie! -,,,\ (2) Amend the claims in the specification as in the attached sheet. (3) Same, page 1, lines 14-15, ``Relates to use...'' to ``Relates to the method of manufacturing a micro-optical original plate for obtaining micro-optical elements such as micro-lenses and micro-prisms to be used.'' I am corrected. (4) Same, page 2, line 14, ``this species'' is corrected to ``this species.'' (5) Same, page 3, line 6, ``Unobtainable'' is corrected to ``Hard to obtain.'' (6) Same page, lines 11-12 have F6°...
``Manufacturing method'' has been corrected to ``A manufacturing method for a microscopic optical element original plate that can obtain a microscopic optical element (microprism, microlens, etc.) having an angle of 6°.'' (7) Same, page 12, line 1, "micro prism" is corrected to "micro optical element." (8) Same, same page, lines 4-5 “for microprism” changed to “
"Micro optical element" is corrected. The above claims are characterized in that a multilayer film of two or more layers is formed on a substrate, the etching speed of the upper layer film being higher than the etching speed of the lower layer film, and etching is performed to form cone-shaped irregularities. A method for manufacturing a micro prism element original plate.

Claims (1)

【特許請求の範囲】[Claims] 基板上に上層膜のエツチング速度が下層膜のエツチング
速度よシ犬である2層以上の多層膜を形成し、エツチン
グを行って錐体状凹凸を形成することを特徴とするマイ
クロプリズム用原板の製造方法。
A master plate for a microprism, characterized in that a multilayer film of two or more layers is formed on a substrate, and the etching speed of the upper layer film is higher than that of the lower layer film, and etching is performed to form cone-shaped irregularities. Production method.
JP1418183A 1983-01-31 1983-01-31 Process for preparing original plate for microprism Pending JPS59139002A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1418183A JPS59139002A (en) 1983-01-31 1983-01-31 Process for preparing original plate for microprism

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1418183A JPS59139002A (en) 1983-01-31 1983-01-31 Process for preparing original plate for microprism

Publications (1)

Publication Number Publication Date
JPS59139002A true JPS59139002A (en) 1984-08-09

Family

ID=11853965

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1418183A Pending JPS59139002A (en) 1983-01-31 1983-01-31 Process for preparing original plate for microprism

Country Status (1)

Country Link
JP (1) JPS59139002A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2775354A1 (en) * 1998-02-24 1999-08-27 Commissariat Energie Atomique Manufacturing process for micro-components formed on substrate, e.g. micro-optical components such as microprisms

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2775354A1 (en) * 1998-02-24 1999-08-27 Commissariat Energie Atomique Manufacturing process for micro-components formed on substrate, e.g. micro-optical components such as microprisms
WO1999044081A1 (en) * 1998-02-24 1999-09-02 Commissariat A L'energie Atomique Method for collectively producing microreliefs, and in particular microprisms, by micromachining, and tools for implementing said method

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