JPS59127882A - Photoelectric conversion semiconductor element - Google Patents
Photoelectric conversion semiconductor elementInfo
- Publication number
- JPS59127882A JPS59127882A JP58002995A JP299583A JPS59127882A JP S59127882 A JPS59127882 A JP S59127882A JP 58002995 A JP58002995 A JP 58002995A JP 299583 A JP299583 A JP 299583A JP S59127882 A JPS59127882 A JP S59127882A
- Authority
- JP
- Japan
- Prior art keywords
- film
- cdte
- photoelectric conversion
- cds
- transparent electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 26
- 238000006243 chemical reaction Methods 0.000 title claims description 16
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 230000002265 prevention Effects 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims 1
- 229910004613 CdTe Inorganic materials 0.000 abstract description 13
- 239000011521 glass Substances 0.000 abstract description 4
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000001704 evaporation Methods 0.000 abstract description 3
- 230000008020 evaporation Effects 0.000 abstract description 2
- 238000010438 heat treatment Methods 0.000 abstract description 2
- 238000004544 sputter deposition Methods 0.000 abstract description 2
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000004132 cross linking Methods 0.000 abstract 1
- 230000003449 preventive effect Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 230000003442 weekly effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
（１）
本発明は、特にイメージセンサに使用する光電変換半導
体素子に関する。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application (1) The present invention particularly relates to a photoelectric conversion semiconductor element used in an image sensor.
従来例の構成とその問題点
従来、イメージセンサとして使用されている光電変換半
導体素子は、シリコン単結晶基板上にＩＣ製造技術を利
用して形成された光電変換素子アレイで構成されている
が、これはシリコン単結晶基板を使用する必要上そのサ
イズを３０ｆｆ以上にすることは困難である。このため
、このような光電変換素子でたとえば原稿を読取る場合
には、レンズ等の光学装置を付加して光像を縮小しなけ
ればならず、装置が大型化すると同時に高価につくとい
う欠点がある。また従来、同一基板上における光電変換
素子と他素子からの漏れ電流を防止するため、逆流防止
ダイオードを別個に設けており、製造工程が複離になる
という欠点がある。Conventional configuration and its problems Photoelectric conversion semiconductor elements conventionally used as image sensors are composed of a photoelectric conversion element array formed on a silicon single crystal substrate using IC manufacturing technology. Because of the necessity of using a silicon single crystal substrate, it is difficult to increase the size to 30ff or more. For this reason, when reading a document using such a photoelectric conversion element, for example, an optical device such as a lens must be added to reduce the optical image, which has the drawback of making the device large and expensive. . Furthermore, conventionally, in order to prevent leakage current from the photoelectric conversion element and other elements on the same substrate, backflow prevention diodes have been separately provided, which has the disadvantage of complicating the manufacturing process.
発明の目的
本発明は上記従来の欠点を解消するもので、任意サイズ
の素子を得ることによって、レンズ等の光学装置の省略
にもとづく装置の小型化を図ると（２）
ともに、その製造工程の簡略化を図ることを目的とする
ものである。Purpose of the Invention The present invention solves the above-mentioned drawbacks of the conventional technology.By obtaining an element of any size, it is possible to reduce the size of the device by omitting optical devices such as lenses. The purpose is to simplify the process.
発明の構成
この目的を達成するため本発明は、絶縁性基籾上に複数
の？ｌ極対を形成し、それぞれの電極対を各別に橋絡す
る一層以上の半導体膜を形成するとともに、この半導体
膜に重ねて導電性膜全形成して、前記各電極対ごとに光
感知部と逆流防止ダイオードとを同一素子内に内蔵した
ものである。Structure of the Invention To achieve this object, the present invention provides a plurality of ? One or more semiconductor films are formed to form one pole pair and bridge each electrode pair separately, and a conductive film is entirely formed over the semiconductor film to form a photo-sensing section for each electrode pair. and a backflow prevention diode are built into the same element.
実施例の説明
第１１’Ｘ＋（ａｔは本発明の実施例を示す模式断面図
である。図中に示すように、ガラス基板（１）上にＩｎ
２Ｏ５を含む透明電極（２）と、これに対向するＮｉ／
Ｃｒ電極（３）とを形成したのち、Ｉｎ２Ｏ３を含む透
明電極（２）上にスパッタ法によりＣｄＳ膜（４）を形
成する。次に、これらの上に、蒸着法で順次ＣｄＴｅ膜
（５）、Ｓｎ膜（６）を形成する。ＣｄＳ膜（４）、Ｃ
ｄＴｅ 映（５１、Ｓｎ膜（６）の成膜時の基板加熱温
度は各々２５０°Ｃ、４３０’Ｃ、１６０’Ｃとする。Description of Examples No. 11'X+(at is a schematic sectional view showing an example of the present invention. As shown in the figure, In
A transparent electrode (2) containing 2O5 and an opposing Ni/
After forming the Cr electrode (3), a CdS film (4) is formed by sputtering on the transparent electrode (2) containing In2O3. Next, a CdTe film (5) and a Sn film (6) are sequentially formed on these by vapor deposition. CdS film (4), C
The substrate heating temperatures for forming the dTe film (51) and the Sn film (6) are 250°C, 430'C, and 160'C, respectively.
ガラス基板（１）上に形成されたＩｎ２Ｏ５を含む透明
電極（２）とＣｄＳ膜（４）はともにｎ型半導体である
から、（３）
両者の接続部（７）はオーミック接触を維持し、またｎ
−ｃｄｓ膜（４）とｎ−ＣｄＴｅ膜（５）もともにｎ型
半導体であるから、両者の接続部（８）もまたオーミッ
ク接触を維持している。ただし、ここでＣｄＴｅ膜（５
）をｎ型にする目的で、蒸発源としてＣｄ過刺（１０％
週刺）ＣｄＴｅを使用している。なお（９）は入射光で
おる。Since the transparent electrode (2) containing In2O5 formed on the glass substrate (1) and the CdS film (4) are both n-type semiconductors, (3) the connection part (7) between them maintains ohmic contact, Also n
Since the -cds film (4) and the n-CdTe film (5) are both n-type semiconductors, the connection portion (8) between them also maintains ohmic contact. However, here, the CdTe film (5
) was used as an evaporation source in order to make it n-type.
Weekly) CdTe is used. Note that (9) is the incident light.
このようにして得られた光電変換半導体素子は光応答速
度１Ｏ−６ｓｅｃ 、 ｆｆ１．度１ｐｌｖ’−１ｘで
ある。第１図（ｂｌは等価回路図である。この第１図（
ｂｌから明らかなように、本発明の光電変換半導体素子
は、ＣｄＴｅ光伝導層０ＯとＣｄＴｅ／Ｓｎ系ダイオー
ドα］）とにより構成されている。ここでＣｄＴｅ光伝
導層の抵抗の明暗比は１００ ｌｘの光照射下で１０ｔ
ある。またＣｄＴ７Ｓｎ系ダイオードは光起電力効果は
なく整流特性のみを備えており、このため回路設計が容
易になるという利点がある。The photoelectric conversion semiconductor device thus obtained has a photoresponse speed of 10-6 sec, ff1. degree 1plv'-1x. Figure 1 (bl is an equivalent circuit diagram.
As is clear from bl, the photoelectric conversion semiconductor element of the present invention is composed of a CdTe photoconductive layer 0O and a CdTe/Sn-based diode α]). Here, the contrast ratio of the resistance of the CdTe photoconductive layer is 10t under 100 lx light irradiation.
be. Furthermore, CdT7Sn-based diodes have no photovoltaic effect and only have rectification characteristics, and therefore have the advantage of facilitating circuit design.
第２図は本発明による光電変換半導体素子を構成する細
胞素子の暗中ならびに光照射時の電圧−電流曲線を示す
。第２図から明らかなように、本発明による光電変換半
導体素子は、両曲線がとも（４）
に座標軸の原点を通るようにされている。このような細
胞素子により構成されるイメージセンサは、同波数応答
特性がＩ ＭＨｚ以上の高速となっている。FIG. 2 shows voltage-current curves of the cell element constituting the photoelectric conversion semiconductor element according to the present invention in the dark and when irradiated with light. As is clear from FIG. 2, in the photoelectric conversion semiconductor device according to the present invention, both curves (4) pass through the origin of the coordinate axes. An image sensor constituted by such a cell element has a high-speed in-wavenumber response characteristic of I MHz or higher.
なお、本素子は曲常のタングステン灯光、蛍光灯光、ハ
ロゲンランプ光等に適用可能である。Note that this element can be applied to ordinary tungsten lamp light, fluorescent lamp light, halogen lamp light, etc.
発明の効果
以上述べたように本発明によると、素子を￥ｉ４膜で構
成したことにより任意の形状、面積でかつ高性能の光電
変換半導体素子が安価に得られ、たとえば本素子を利用
したイメージセンサでは、チップサイズを被読取り原稿
幅と同じ大きさにすることができるため、本素子に近接
して設けた発光ダイオードを光諒として、被写体として
の原稿を高速度で直接的に読取ることが可能となって、
装置を小型化、低価格化するのに有効であり、しかも同
一半導体素子内部に光電変換機能と逆流防止ダイオード
機能とを備えているため、製廼工程が簡略でかつ素子が
小型になるという利点を有する。Effects of the Invention As described above, according to the present invention, by configuring the device with an i4 film, a high-performance photoelectric conversion semiconductor device having any shape and area can be obtained at low cost. In the sensor, the chip size can be made to be the same size as the width of the document to be read, so it is possible to directly read the document as a subject at high speed using a light emitting diode installed close to this element as a light source. It became possible,
It is effective in downsizing and lowering the cost of the device, and has the advantage of simplifying the manufacturing process and making the device smaller because it has a photoelectric conversion function and a backflow prevention diode function inside the same semiconductor element. has.
第１図（ａｔは本発明による光電変換半導体素子の（５
）
模式断面図、第１図（ｂｌはその等価回路図、第２図は
明暗中の電圧電流曲線を示す図である。
（１）・・・ガラス基板（絶縁性基板） 、（２）・・
・透明電極、（３） −Ｎｉ／Ｃｒ電極、（４） ・Ｃ
ｄＳ膜（半導体膜） 、（５） −・・ＣｄＴｅ膜（半
導体膜） 、 （ｆｌ）−５ｎ膜（導電性膜）、ＯＧ・
・−光伝導層（光感知部）、Ｑｌ）・・・ダイオード代
理人 森 本 義 弘
（６）
第１図
（ａ＞
（ｂ）
１０ １７
第２図FIG. 1 (at is (5) of the photoelectric conversion semiconductor device according to the present invention.
) Schematic cross-sectional view, Figure 1 (bl is its equivalent circuit diagram, Figure 2 is a diagram showing voltage-current curves in bright and dark conditions. (1)...Glass substrate (insulating substrate), (2)...・
・Transparent electrode, (3) -Ni/Cr electrode, (4) ・C
dS film (semiconductor film), (5) ---CdTe film (semiconductor film), (fl)-5n film (conductive film), OG.
・-Photoconductive layer (light sensing part), Ql)...Diode agent Yoshihiro Morimoto (6) Figure 1 (a> (b) 10 17 Figure 2
Claims (1)
の電極対を各別に橋絡する一層以上の半導体膜を形成す
るとともに、この半導体膜に重ねて導電性膜を形成して
、＠記者電極対ごとに光感知部と逆流防止ダイオードと
を同一素子内に内蔵したことを特徴とする光電変換半導
体素子。 ２、 各を極対上に橋絡するように形成した一層以上の
半導体膜として、■−■族化合物膜を形成したことを特
徴とする特許請求の範囲第１項に記載の光電変換半導体
素子。 ３、半導体膜の第１層を膜厚１５００Ａ以下のＣｄＳ膜
とすることを特徴とする特許請求の範囲第１項または第
２項に記載の光電変換半導体素子。[Claims] 1. Forming a number of pairs of electrodes on an insulating substrate, forming one or more semiconductor films bridging each pair of electrodes separately, and layering a conductive layer over this semiconductor film. A photoelectric conversion semiconductor device characterized in that a photodetector and a backflow prevention diode are built into the same device for each @reporter electrode pair by forming a film. 2. The photoelectric conversion semiconductor device according to claim 1, wherein a ■-■ group compound film is formed as one or more semiconductor films formed so as to bridge each pole pair. . 3. The photoelectric conversion semiconductor device according to claim 1 or 2, wherein the first layer of the semiconductor film is a CdS film having a thickness of 1500 Å or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58002995A JPS59127882A (en) | 1983-01-11 | 1983-01-11 | Photoelectric conversion semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58002995A JPS59127882A (en) | 1983-01-11 | 1983-01-11 | Photoelectric conversion semiconductor element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59127882A true JPS59127882A (en) | 1984-07-23 |
Family
ID=11544955
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58002995A Pending JPS59127882A (en) | 1983-01-11 | 1983-01-11 | Photoelectric conversion semiconductor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59127882A (en) |
-
1983
- 1983-01-11 JP JP58002995A patent/JPS59127882A/en active Pending
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