JPS5912507A - Method of producing transparent conductive film - Google Patents
Method of producing transparent conductive filmInfo
- Publication number
- JPS5912507A JPS5912507A JP11978482A JP11978482A JPS5912507A JP S5912507 A JPS5912507 A JP S5912507A JP 11978482 A JP11978482 A JP 11978482A JP 11978482 A JP11978482 A JP 11978482A JP S5912507 A JPS5912507 A JP S5912507A
- Authority
- JP
- Japan
- Prior art keywords
- film
- transparent conductive
- conductive film
- producing transparent
- film thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
本発明は透明導電膜の製造方法に関する０透明導電膜は
光電変換素子に広く使用されているがその透明性は一般
に極力大であり、又導電性も極力大であることが必要と
されている０透明導電膜の光透過特性は膜構成物質の光
吸収に基ぐ要素と光干渉による波長選択透過特性とがあ
るが、前者は轟然ながら膜厚金大＾くすると透過率が低
下してしまい望ましくない。一方、導電性を支配する大
らい要因は膜厚であり、導電度と光透過率とは相反性を
有する〇
酸化インジウムを主成分とする透明導電膜は、その形成
条件にもよるが一般に比抵抗の低い膜は光吸収が比較的
大であシ透明度の大きな膜は比抵抗が大きい。しかしな
がら、両種ρ膜の間の光屈折率の差異はほとんどなく、
一般に使用される透明導！膜形成基板材料例えばガラス
、プラスティックスシートに比べはるかに高屈折率を有
する。Detailed Description of the Invention The present invention relates to a method for producing a transparent conductive film.Transparent conductive films are widely used in photoelectric conversion elements, but their transparency is generally as high as possible, and their conductivity is also as high as possible. The light transmission properties of a transparent conductive film are based on the light absorption of the film's constituent materials and wavelength selective transmission properties based on optical interference, but the former is extremely difficult to achieve as the film thickness increases. This is undesirable because the transmittance decreases. On the other hand, the major factor governing conductivity is film thickness, and conductivity and light transmittance are reciprocal.Transparent conductive films whose main component is indium oxide are generally A film with low resistance has a relatively large amount of light absorption, and a film with high transparency has a large specific resistance. However, there is almost no difference in the optical refractive index between the two types of ρ films;
Transparent conductor commonly used! It has a much higher refractive index than the film forming substrate material, such as glass or plastic sheet.
光電変換素子に於る透明導′ｖＬ膜を設計するに当って
、その抵抗値のみではなく光透過率や膜厚に設計指定を
必要とすることがしばしばある。こ＼において、膜厚は
所定の光干渉性によって光透過率を達成するために必要
である場合と、その他の目的、例えば膜厚によって膜表
面の粒状性に影響があり所定の粒状性をうるために所定
以上の膜厚が必要とさ几ることかあることを意味する。When designing a transparent conductive VL film in a photoelectric conversion element, it is often necessary to specify not only its resistance value but also its light transmittance and film thickness. In this case, the film thickness may be necessary to achieve light transmittance with a predetermined optical coherence, or for other purposes, for example, the film thickness may affect the graininess of the film surface and it may be necessary to achieve a predetermined graininess. This means that the film thickness may be required to exceed a certain value.
したがって、この目的で光吸収性のある膜を形成すると
透過率が低下してしまう。Therefore, if a light-absorbing film is formed for this purpose, the transmittance will decrease.
本発明はこのような点を改善することを目的とするもの
であり、膜形成基板上にまず透明度は高いが比抵抗が高
い膜を形成し、次で比較的光の吸収は大であるが比抵抗
の低い膜を形成し、総合膜厚が目的とする光干渉性を達
成すべき比較的大な膜厚又は所望の表面粒度を有する比
較的大な膜厚となる↓うにするものである。The purpose of the present invention is to improve these points. First, a film with high transparency but high specific resistance is formed on the film forming substrate, and then a film with high specific resistance is formed on the film forming substrate, and then a film with relatively high light absorption is formed. A film with low resistivity is formed, and the total film thickness is a relatively large film thickness that achieves the desired optical coherence, or a relatively large film thickness that has the desired surface grain size. .
このような透明導電膜の製造方法は、総合所要膜厚３０
００Ａ程度以上であるようｌＪ、、酸化インジウム系透
明導［膜において特に顕著に有効である。This method of manufacturing a transparent conductive film has a total required film thickness of 30
It is particularly effective for indium oxide-based transparent conductive films.
又酸化インジウム系透明導電膜でも形成温度を例えば１
００℃以下に制限しなけ扛ばならないような場合に有効
である０
酸化インジウム匡於ては、膜形成に際して酸化を進行さ
せれば透明度は犬、比抵抗は大となり、酸化を抑制すれ
ば七オｔぞれその逆の結果がえらｎる。まｒｃ Ｓスパ
ッタリング法による酸化インジウム透明導電膜について
水沫を適用するには、膜形成の・初期に於ては界囲気酸
素分圧を犬とすること、膜形成速度を遅くすること、膜
形成温度を高くすること等の条件によって透明度大、比
抵抗大なる膜を形成し、こ九に引続いてＭｌの形成条件
の逆の条件を与え逆の特性の膜を重畳する０このように
本発明に係る透明導電膜の製造方法によると、比抵抗が
低い値を有しながら光透過率が大きい膜を形成できる効
果がある。Also, for indium oxide-based transparent conductive films, the formation temperature is set to 1, for example.
It is effective in cases where it is necessary to limit the temperature to below 00°C.In the case of indium oxide film, if oxidation is allowed to progress during film formation, the transparency will be high and the resistivity will be high, but if oxidation is suppressed, the The opposite result will be obtained in each case. In order to apply water droplets to an indium oxide transparent conductive film formed by the S sputtering method, it is necessary to keep the ambient oxygen partial pressure at a low value in the initial stage of film formation, to slow down the film formation rate, and to adjust the film formation temperature. A film with high transparency and high specific resistance is formed by increasing the Ml formation conditions, and then a film with the opposite characteristics is superimposed by applying conditions opposite to those for forming Ml. According to the method for manufacturing a transparent conductive film, it is possible to form a film having a low specific resistance and high light transmittance.
懲punishment
Claims (1)
板に高抵抗で高光透過性の層を形成し、次いで比較的低
抵抗で低光透過性の層を形成することを特徴とする透明
導電膜のｉ進方法０A method for producing a transparent conductive film made of a metal oxide, which comprises forming a layer with high resistance and high light transmittance on a substrate, and then forming a layer with relatively low resistance and low light transmittance on a substrate. i-adic method of 0
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11978482A JPS5912507A (en) | 1982-07-12 | 1982-07-12 | Method of producing transparent conductive film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11978482A JPS5912507A (en) | 1982-07-12 | 1982-07-12 | Method of producing transparent conductive film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5912507A true JPS5912507A (en) | 1984-01-23 |
Family
ID=14770132
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11978482A Pending JPS5912507A (en) | 1982-07-12 | 1982-07-12 | Method of producing transparent conductive film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5912507A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11474124B2 (en) | 2020-05-11 | 2022-10-18 | Raytheon Company | Fluid probe with heat spreader structure and thermal energy source |
| US11771590B2 (en) | 2020-05-11 | 2023-10-03 | Raytheon Company | Medical fluid probe with heat spreader structure and thermal energy source |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5222789A (en) * | 1975-08-13 | 1977-02-21 | Toppan Printing Co Ltd | Transparent conductive film |
-
1982
- 1982-07-12 JP JP11978482A patent/JPS5912507A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5222789A (en) * | 1975-08-13 | 1977-02-21 | Toppan Printing Co Ltd | Transparent conductive film |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11474124B2 (en) | 2020-05-11 | 2022-10-18 | Raytheon Company | Fluid probe with heat spreader structure and thermal energy source |
| US11771590B2 (en) | 2020-05-11 | 2023-10-03 | Raytheon Company | Medical fluid probe with heat spreader structure and thermal energy source |
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