JPS5912420A - Element having insulating film - Google Patents

Element having insulating film

Info

Publication number
JPS5912420A
JPS5912420A JP57121166A JP12116682A JPS5912420A JP S5912420 A JPS5912420 A JP S5912420A JP 57121166 A JP57121166 A JP 57121166A JP 12116682 A JP12116682 A JP 12116682A JP S5912420 A JPS5912420 A JP S5912420A
Authority
JP
Japan
Prior art keywords
film
insulating film
formula
aromatic
represented
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57121166A
Other languages
Japanese (ja)
Other versions
JPH0251167B2 (en
Inventor
Susumu Era
恵良 進
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Resonac Corp
Original Assignee
Hitachi Chemical Co Ltd
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd, Hitachi Ltd filed Critical Hitachi Chemical Co Ltd
Priority to JP57121166A priority Critical patent/JPS5912420A/en
Publication of JPS5912420A publication Critical patent/JPS5912420A/en
Publication of JPH0251167B2 publication Critical patent/JPH0251167B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1337Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • G02F1/133711Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers by organic films, e.g. polymeric films

Landscapes

  • Physics & Mathematics (AREA)
  • Liquid Crystal (AREA)
  • Nonlinear Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Formation Of Insulating Films (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)

Abstract

PURPOSE:To form an insulating film for an element such as a liq. crystal display element by treatment at a low temp. and to prevent the coloring of the film by using an aromatic polyether imide polymer having specified repeating units as the material of the film. CONSTITUTION:An insulating film for an element is formed using an aromatic polyether imide polymer having repeating units represented by formula I (where each of Ar and R is a bivalent aromatic residue). Thus, an orienting film or the like for a liq. crystal display element can be formed by treatment at a low temp., and the film is not colored and has superior transparency. The aromatic polyether imide polymer represented by formula I can be manufactured by the polycondensation of dinitrophthalamide of aromatic diamine represented by formula II with alkali metallic diphenoxide represented by formula III (where M is an alkali metal) or the polycondensation of bis(ether acid anhydride) represented by formula IV with aromatic diamine represented by formula V.

Description

【発明の詳細な説明】 本発明は絶縁膜を有する素子に係り、特に樹脂封止型半
導体装置の素子表面を保護コー)(P−N接合部のコー
ト)するのに好適な、或いは液晶表示素子の配向膜とし
て好適な絶縁膜を有する素子に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an element having an insulating film, and is particularly suitable for protecting the element surface of a resin-sealed semiconductor device (coating a P-N junction) or for a liquid crystal display. The present invention relates to an element having an insulating film suitable as an alignment film of the element.

従来から素子の表UIrJ金ポリイミド重合体で保護コ
ートした半導体装置は知られていた。しかしながら、芳
香族ポリイミド系重合体は一般に有機溶剤に不溶である
ため、コーティングする際には、その前駆体であるポリ
アミド酸の溶液をコートした後、溶剤除去とともに、加
熱閉環反応を起こさせる。従って、処理温度は高温を必
要とするが、尚温処理は作業性という点から以外にも、
高温ではボンディング部に好ましからざるAu−Atの
合金が生成し、半導体装置の耐湿性が低下しやすいとい
う点からも好ましくない。
2. Description of the Related Art Semiconductor devices have heretofore been known in which the surface of the element is protectively coated with a gold polyimide polymer. However, since aromatic polyimide polymers are generally insoluble in organic solvents, when coating them, a solution of polyamic acid, which is a precursor thereof, is coated, and then the solvent is removed and a ring-closing reaction is caused by heating. Therefore, a high processing temperature is required, but processing at a still temperature is not only effective in terms of workability, but also
High temperatures are also undesirable because an undesirable Au-At alloy is formed in the bonding portion and the moisture resistance of the semiconductor device is likely to deteriorate.

一方、液晶セル、特に電界の作用によ多動作する電熱光
学的効果を利用したネマチック液晶表示素子において、
配向膜として芳香族ポリイミド系材料が使用され得るこ
とは既に公知である。例えば、特開昭51−65960
号公報に記載されている4、4′−ジアミノジフェニル
エーテルとピロメリット酸二無水物との縮合にょシ得ら
れるポリイミドは、配向の均一性ならびに劣化試験によ
る耐久性の点でかなシ良好である。しかし、このような
ポリイミド系重合体は有機溶媒に不溶であるため、基板
上に配向膜を形成する際には、ポリイミドの前駆体であ
るポリアミド酸の溶液を塗布し、しかる後、溶剤を除去
する際に、脱水閉環させる。
On the other hand, in liquid crystal cells, especially nematic liquid crystal display elements that utilize electrothermal optical effects that operate multiple times due to the action of electric fields,
It is already known that aromatic polyimide-based materials can be used as alignment films. For example, JP-A-51-65960
The polyimide obtained by the condensation of 4,4'-diaminodiphenyl ether and pyromellitic dianhydride described in the publication has good properties in terms of uniformity of orientation and durability in deterioration tests. However, such polyimide polymers are insoluble in organic solvents, so when forming an alignment film on a substrate, a solution of polyamic acid, a precursor of polyimide, is applied, and then the solvent is removed. At the same time, dehydration and ring closure are performed.

したがって、処理温度f:200cにする必要があり、
ひいては配向膜の褐色化を進める。そのため、液晶を封
入した後の液晶表示素子が褐色味を帯び、同時に視野が
暗くなシ、更にはコントラストが低下し、表示素子とし
ての機能、特に高品質の表示の要求を満たさないという
問題があった。
Therefore, it is necessary to set the processing temperature f: 200c,
This in turn promotes browning of the alignment film. As a result, the liquid crystal display element after encapsulating the liquid crystal has a brownish tinge, and at the same time, the field of view becomes dark, and furthermore, the contrast deteriorates, and the function as a display element, especially the need for high quality display, is not met. there were.

また、近年液晶層が透明な基板を介して二層以上積層さ
れた構造の多層構造液晶セルの需要が増大する中で、こ
れまでのポリイミド配向膜ではその着色が問題となって
いる。
Furthermore, as demand for multilayer liquid crystal cells having a structure in which two or more liquid crystal layers are laminated via a transparent substrate has increased in recent years, coloring has become a problem with conventional polyimide alignment films.

本発明は、低温処理にて絶縁膜形成が可能な絶縁膜を有
する素子を提供することを特徴とする特に液晶表示水子
に対しては、その目的は、製膜時に着色せず透明性に優
れかつネサパターンの目立たない配向膜を有する液晶表
示素子を提供することである。
The present invention is characterized by providing an element having an insulating film that can be formed by low-temperature processing. Particularly for liquid crystal displays, the purpose is to provide transparency without coloring during film formation. It is an object of the present invention to provide a liquid crystal display element having an alignment film which is excellent and has an inconspicuous Nesa pattern.

本発明において、芳香族ポリエーテルイミド直合体から
なる半導体素子コート膜の厚さは、好ましくは1〜30
0μmの範囲から選ばれる。特に、半導体装1dがメモ
リでありα線によるソフトエラーを防止する為、保護コ
ートする場合には、30〜100μmが選ばれることが
望ましい。
In the present invention, the thickness of the semiconductor element coating film made of the aromatic polyetherimide polymer is preferably 1 to 30
It is selected from the range of 0 μm. In particular, when the semiconductor device 1d is a memory and a protective coating is applied to prevent soft errors caused by alpha rays, it is desirable to select a thickness of 30 to 100 μm.

本発明において用いられる芳香族ポリエーテルアミド重
合体は、一般式(IV)で示される芳香族ジアミンのジ
ニトロ7タルイミドと、一般式(■)のアルカリ金属ジ
フェノキシドとの*縮合或いは、一般式(Vl)のビス
(エーテル酸無水物)と一般式(■)の芳香族ジアミン
との重縮合によHEN  E’−NH2(■) って得られる(但し、上記式(M)〜(■)において、
Ar及びRは二価の芳香族残基であり、Mはアルカリ金
属をあられす)。
The aromatic polyetheramide polymer used in the present invention is produced by *condensation of dinitro-7-talimide of an aromatic diamine represented by the general formula (IV) and an alkali metal diphenoxide represented by the general formula (■), or HEN E'-NH2 (■) is obtained by polycondensation of the bis(ether acid anhydride) of Vl) and the aromatic diamine of the general formula (■) (However, the above formulas (M) to (■) In,
Ar and R are divalent aromatic residues, M represents an alkali metal).

本発明者らは、従来のポリイミド膜の欠点であった液晶
表示素子の着色を低減し、透明性を向上させるため、比
較的低温で処理可能で着色の少ないポリイミドを得るべ
く、検討を重ねた。その結果、ある特定のポリエーテル
イミドがジメチルホルムアミド、ジメチルアセトアミド
、N−メチルピロリドン等の極性溶媒に可溶であること
をつきとめた。ポリエーテルイミドの溶液を用いると、
製膜は溶剤を除去するだけで良いため、比較的低温で処
理が可能となり、配向膜の着色は少ない。
In order to reduce the coloration of liquid crystal display elements, which was a drawback of conventional polyimide films, and improve transparency, the present inventors conducted repeated studies in order to obtain a polyimide that can be processed at relatively low temperatures and has less coloration. . As a result, it was found that certain polyetherimides are soluble in polar solvents such as dimethylformamide, dimethylacetamide, and N-methylpyrrolidone. Using a solution of polyetherimide,
Since film formation requires only the removal of the solvent, processing can be performed at a relatively low temperature, and the alignment film is less likely to be colored.

本発明に用いられる芳香族ポリエーテルイミド重合体は
、着色が少なく、透明性に優れ、ネサパターンが目立た
ず十分な液晶配向性を有する配向膜を形成しうる。また
、本発明の配向膜は、多層構造の液晶表示用としても優
れている。
The aromatic polyetherimide polymer used in the present invention has little coloring, is excellent in transparency, and can form an alignment film having sufficient liquid crystal alignment properties without conspicuous Nesa patterns. Furthermore, the alignment film of the present invention is also excellent for use in multilayer liquid crystal displays.

本発明において用いられる芳香族ポリエーテルイミドの
製造に用いられる二価フェノールの、4体例をあげると
、2.2−ビス(4−ヒドロキシフェニル)プロパン、
4.4’−ジヒドロキシジフェニルエーテル、ハイドロ
キノン、カテコール、ビス(4−ヒドロキシフェニル)
メタン、4.4’−ジヒドロキシジフェニルスルホン、
4.4’ −ジヒドロキシベンゾフェノン、4.4’−
ジヒドロキシジフェニルスルフィド、2,2−ビス(4
−ヒドロキシフェニル)−1,1,1,3,3゜3−へ
キサフルオロプロノくン、2.5−ジヒドロキ/トルエ
ン、4.4′−ジヒドロキン−3,3′−ジメチルジフ
ェニル、3.3’ 、5.5’−テトラメチル−4,4
’−ジヒドロキシジフェニル、ビス(:4−(4−ヒド
ロキシフェノキ/)7エ二ル〕スルホン、ビス[4−(
4−ヒドロキシフェノキ7)フェニル〕エーテル、4.
4′−ジ(P−ヒドロキシフェノキシ)ベンゾフェノン
等が挙げられる。
Four examples of dihydric phenols used in the production of the aromatic polyetherimide used in the present invention are 2,2-bis(4-hydroxyphenyl)propane,
4.4'-dihydroxydiphenyl ether, hydroquinone, catechol, bis(4-hydroxyphenyl)
Methane, 4,4'-dihydroxydiphenylsulfone,
4.4'-dihydroxybenzophenone, 4.4'-
Dihydroxydiphenyl sulfide, 2,2-bis(4
-hydroxyphenyl)-1,1,1,3,3゜3-hexafluoropronoquine, 2.5-dihydroquine/toluene, 4.4'-dihydroquine-3,3'-dimethyldiphenyl, 3.3 ', 5,5'-tetramethyl-4,4
'-dihydroxydiphenyl, bis(:4-(4-hydroxyphenoxy/)7enyl]sulfone, bis[4-(
4-Hydroxyphenoxy7)phenyl]ether, 4.
Examples include 4'-di(P-hydroxyphenoxy)benzophenone.

また、本発明に用いられる芳香族ポリエーテルイミドの
製造に用いられる芳香族ジアミンの例を挙ケると、m−
フェニレンジアミン、p−フェニレンジアミン、41 
’′−ジアミノジフェニルブロバン、4.4’−ジアミ
ノジフェニルスルフィド、4.4’−ジアミノジフェニ
ルスルホン、4゜4’−ジアミノジフェニルエーテル、
1.s −ジアミノナフタリン、2,4−ジアミノトル
エン、2.6−ジ1ミノトルエン、4.4’−ジアミノ
ジフェニルメタン、4.4’−ジアミノベンゾフェノン
、ビス[”4−(4−アミノフェノキシ)フェニル]ス
ルホン、2,2−ビス(:4−(4−アミノフェノキシ
)フェニル〕ブロノくン、2.2−ビス(4−(4−ア
ミノフェノキシ)フェニル〕1.1,1,3,3.3−
へキサフルオロプロパン、4.4’−<9−アミノフェ
ノキシ)ベンゾフェノン、ビス[4−(4−アミノフェ
ノキシ)フェニルコメタン、ビス(4−(4−1ミノフ
エノキシ)フェニル〕エーテルなどがあげられる。
In addition, examples of aromatic diamines used in the production of aromatic polyetherimide used in the present invention include m-
Phenylene diamine, p-phenylene diamine, 41
''-diaminodiphenyl broban, 4.4'-diaminodiphenyl sulfide, 4.4'-diaminodiphenylsulfone, 4°4'-diaminodiphenyl ether,
1. s-diaminonaphthalene, 2,4-diaminotoluene, 2,6-di1minotoluene, 4,4'-diaminodiphenylmethane, 4,4'-diaminobenzophenone, bis["4-(4-aminophenoxy)phenyl]sulfone , 2,2-bis(:4-(4-aminophenoxy)phenyl)bronokun, 2.2-bis(4-(4-aminophenoxy)phenyl)1.1,1,3,3.3-
Examples include hexafluoropropane, 4,4'-<9-aminophenoxy)benzophenone, bis[4-(4-aminophenoxy)phenylcomethane, bis(4-(4-1minophenoxy)phenyl]ether), and the like.

前記芳香族ポリエーテルイミド重合体は、ジメチルポル
ムアミド、ジメチルアセトアミド、N−メチルピロリド
ン、ジメチ・トスルホキシド等に溶解して、ワニスの形
態にする。半導体素子コート用としてはこれe[子に塗
布して100〜200Cの温度条件にて製膜することが
できる。その後、例えば、エポキシ樹脂、ジアリルフタ
レ−1111N、フェノール樹脂、不飽和ポリエステル
樹脂、シリコーン樹脂等で封止される。
The aromatic polyetherimide polymer is dissolved in dimethylpolamide, dimethylacetamide, N-methylpyrrolidone, dimethytosulfoxide, etc. to form a varnish. For coating semiconductor devices, it is possible to form a film by applying it to a film at a temperature of 100 to 200C. Thereafter, it is sealed with, for example, epoxy resin, diallylphthalate-1111N, phenol resin, unsaturated polyester resin, silicone resin, or the like.

尚、液晶表示素子の配向膜の形成に当って、上記により
調製した重合体溶液の取扱いは特別の配慮は不要であり
、刷毛塗り、浸漬、回転塗布、印刷その他慣用の手段に
より行なうことができる。
In forming an alignment film for a liquid crystal display element, no special consideration is required when handling the polymer solution prepared as described above, and it can be carried out by brush coating, dipping, spin coating, printing, or other conventional means. .

本発明の配向膜は、導電層を設けた基板上に直接形成す
ることができるが、導電層の下層または上層に無機絶縁
膜を設けたものを用いることにより、更に優れた液晶表
示素子ヲ得ることができる。
Although the alignment film of the present invention can be formed directly on a substrate provided with a conductive layer, an even more excellent liquid crystal display element can be obtained by using one in which an inorganic insulating film is provided below or above the conductive layer. be able to.

このような無機絶縁膜としては、S t 02. A4
03 。
As such an inorganic insulating film, S t 02. A4
03.

及びT10.の膜が適自である。and T10. The membrane is suitable.

また、本発明においては、一層強固な配向膜を得るため
に、エポキシ系及びアミノ系シランカップリング剤の1
種以上を併用することができる。
In addition, in the present invention, in order to obtain an even stronger alignment film, one of epoxy-based and amino-based silane coupling agents is used.
More than one species can be used together.

7ランカツプリング剤としては、例えば、γ−アミノプ
ロピルトリエトキシシラン及びγ−グリシドキシプロビ
ルトリメトキシシラン等を挙げることができる。適用に
当っては、上べ己電合体溶液中に滴下添加しても良く、
また、シランカップリング剤の膜を形成した上に更に配
向膜を形成しても良い。
Examples of the 7-run coupling agent include γ-aminopropyltriethoxysilane and γ-glycidoxypropyltrimethoxysilane. For application, it may be added dropwise into the upper electrolyte solution,
Furthermore, an alignment film may be further formed on top of the silane coupling agent film.

本発明の液晶表示素トに封入する液晶の一例としては、
次のものを挙げることができる。これらは通常二成分以
上の混合物として適用される。
As an example of the liquid crystal sealed in the liquid crystal display element of the present invention,
The following can be mentioned: These are usually applied as a mixture of two or more components.

(1)  ビフェニル型液晶として の混合物 (2)エステル型液晶としては、 の混合物 (3)  シクロヘキサン型液晶としては、の混合物が
ある。
(1) A mixture of biphenyl type liquid crystals, (2) A mixture of ester type liquid crystals, and (3) A mixture of cyclohexane type liquid crystals.

次に、本発明を実施例により説明する。Next, the present invention will be explained by examples.

実施例1 52重量部の2.2−ビス(4−(3,4−ジカルボキ
シフェノキシ)フェニル〕プロパンニ無水物、41重量
部の2,2−ビス[4−(4−アミノフェノキシ)フェ
ニル〕プロパン、1,000Ji量部のN−メチルピロ
リドン及び300fi童部のトルエンの混合物を室温で
約1時間攪拌した後、150Cで約1時間還流した。こ
の際、生成する水を共沸により留去した。更にトルエン
200部を加えて、トルエンを留去し力から18011
1’まで昇温した後、冷却した。このようにして得られ
た芳香族ポリエーテルイミド重合体kN−メチルピロリ
ドン15%溶液に調製した。これをMO8mLSIに塗
布し、100C130分、150C。
Example 1 52 parts by weight of 2,2-bis(4-(3,4-dicarboxyphenoxy)phenyl)propanihydride, 41 parts by weight of 2,2-bis[4-(4-aminophenoxy)phenyl] A mixture of propane, 1,000 parts of N-methylpyrrolidone, and 300 parts of toluene was stirred at room temperature for about 1 hour, and then refluxed at 150 C for about 1 hour. At this time, the water produced was distilled off by azeotropy. Furthermore, 200 parts of toluene was added, and the toluene was distilled off to give 18011 parts.
After raising the temperature to 1', it was cooled. A 15% solution of the aromatic polyetherimide polymer thus obtained in kN-methylpyrrolidone was prepared. Apply this to MO8mLSI and heat at 100C for 130 minutes at 150C.

1時間、200C12時間加熱して厚さ約40μmの膜
を素子表面に形成した。
A film with a thickness of about 40 μm was formed on the surface of the device by heating at 200C for 1 hour and 12 hours.

その後、エポキシ樹脂でトランスファ成形し封止した。Thereafter, it was transfer molded and sealed with epoxy resin.

この半導体装置の80C190%RH。80C190%RH of this semiconductor device.

i、ooo時間時間数障率は0/90と優れていた。The i, ooo time and number of hours failure rate was excellent at 0/90.

実施例2 0.1モルの2,2−ビスC4−(3,4−ジカルボキ
シフェノキシ)フェニル〕プロパンニ無水物と、01モ
ルのメタフェニレンジアミンとより実施例1と同様にし
て芳香族ポリエーテルイミド重合体を得た。同様にして
固形分15%のワニスをalS製し、MO8′m、LS
Iに塗布した。この半導体装置の80C190%での耐
湿性は良好であった。
Example 2 An aromatic polyether was prepared in the same manner as in Example 1 using 0.1 mol of 2,2-bisC4-(3,4-dicarboxyphenoxy)phenyl]propan dianhydride and 0.1 mol of metaphenylenediamine. An imide polymer was obtained. Similarly, a varnish with a solid content of 15% was made from alS, MO8'm, LS
It was applied to I. The moisture resistance of this semiconductor device at 80C190% was good.

実施例3 43.6部のビス(4−(4−ヒドロキノフェノキシ)
フェニル〕スルホン、8部の水酸化ナトリウムを50部
の水に溶解したNaOH水溶液、30部のジメチルスル
ホキシド及び100部のベンゼンからなる混合物を攪拌
しながら加熱し、水分をベンゼンと共沸することにより
除去した。次に45.8部の1,3−ジ〔4−ニトロフ
タルイミノ〕ヘンセン及び300部のジメチルスルホキ
シI−”k加えた。120Cで2時間反応させた後、反
応混合物をメタノールに注ぎ、重合体を沈でんさせた。
Example 3 43.6 parts of bis(4-(4-hydroquinophenoxy)
[phenyl]sulfone, a NaOH aqueous solution prepared by dissolving 8 parts of sodium hydroxide in 50 parts of water, 30 parts of dimethyl sulfoxide, and 100 parts of benzene by heating with stirring and azeotroping the water with the benzene. Removed. Next, 45.8 parts of 1,3-di[4-nitrophthalimino]hensen and 300 parts of dimethylsulfoxy I-"k were added. After reacting for 2 hours at 120C, the reaction mixture was poured into methanol, The polymer was allowed to settle.

得られた粉末を乾燥後、ジメチルホルムアミドに溶解し
、MO8型ICに皇布し、80c、30分、150C1
1時間、180C,2時間加熱した後、エポキシ樹脂で
封止した。この半導体装置の耐湿性は良好であった。
After drying the obtained powder, it was dissolved in dimethylformamide, applied to MO8 type IC, and heated at 80C for 30 minutes at 150C1.
After heating at 180C for 1 hour and 2 hours, it was sealed with epoxy resin. This semiconductor device had good moisture resistance.

実施例4 52重量部の2,2−ビスC4−(3,4−ジカルボキ
シフエノギシ)フェニル〕プロパンニ無水物、41重量
部の2,2−ビス(4−(4−アミノフェノキシ)フェ
ニル〕プロパン、1,0001i量部のN−メチルピロ
リドン及び300重量部のトルエンの混合物を室温で約
1時間攪拌した後、150Cで約1時間還流した。この
際、生成する水を共沸により留去した。更にトルエン2
00部を加えて、トルエンを留去しながら180Cまで
昇温した後、冷却した。このようにして得られた芳香族
ポリエーテルイミド重合体kN−メチルピロリドン7%
溶液に調製した。液晶セル基板上にオフセット印刷機を
用いて重合体溶液を用いて50.100,1501mの
配向膜全印刷し、さらに180tll”1時間加熱し溶
剤除去した。その後、綿布で一定方向にこすシ操作を行
ない、この基板2枚をスペーサを介してエポキシ樹脂の
有機シール全施し素子を作製した。このようにして素子
を形成し、これらの素子に、(1)ピフェニル型液晶。
Example 4 52 parts by weight of 2,2-bisC4-(3,4-dicarboxyphenoxy)phenyl]propanihydride, 41 parts by weight of 2,2-bis(4-(4-aminophenoxy)phenyl) ] A mixture of propane, 1,0001 parts of N-methylpyrrolidone, and 300 parts by weight of toluene was stirred at room temperature for about 1 hour, and then refluxed at 150 C for about 1 hour. At this time, the water produced was distilled off by azeotropic distillation. In addition, toluene 2
00 parts were added thereto, the temperature was raised to 180C while toluene was distilled off, and then the mixture was cooled. Aromatic polyetherimide polymer kN-methylpyrrolidone 7% thus obtained
Prepared in solution. An alignment film of 50,100,1501 m was entirely printed on the liquid crystal cell substrate using a polymer solution using an offset printing machine, and the solvent was removed by heating for 180 tll for 1 hour.After that, the film was rubbed in a certain direction with a cotton cloth. An element was fabricated by applying an organic seal of epoxy resin to the two substrates using a spacer.Thus, the elements were formed, and these elements were coated with (1) piphenyl type liquid crystal.

(2)エステル型液晶、(3)シクロヘキザン型液晶の
それぞれ別個に注入した後、各注入口をエポキシ樹脂で
封止して液晶表示素子を作成した。いずれも非常に透明
性に優れ、且つネサパターンの目立たない高品質の素子
を得ることができた。
After separately injecting (2) ester-type liquid crystal and (3) cyclohexane-type liquid crystal, each injection port was sealed with epoxy resin to produce a liquid crystal display element. In either case, high-quality elements with very excellent transparency and inconspicuous Nesa patterns could be obtained.

実施例5 0.1モルの2.2−ビス[4−(3,4−ジカルボキ
シフエノギシ)フェニル〕プロパンニ無水物と、0.1
モルのメタフェニレンジアミンとより実施例1と同様に
して芳香族ポリエーテルイミド重合体を得た。
Example 5 0.1 mole of 2,2-bis[4-(3,4-dicarboxyphenogisi)phenyl]propanihydride;
An aromatic polyetherimide polymer was obtained in the same manner as in Example 1 using mol of metaphenylenediamine.

この重合体溶液にグロビルトリエトキシ7ラン0.1重
量%を添加し、実施例1と同様に配向膜形成を行ない、
ガラスフリットシールを用いて、液晶表示素子を作製し
てその透明性並びにネサパターン有無を調べた。
Adding 0.1% by weight of globiltriethoxy 7ran to this polymer solution, forming an alignment film in the same manner as in Example 1,
A liquid crystal display element was fabricated using a glass frit seal, and its transparency and presence or absence of a Nesa pattern were examined.

いずれも非常に透明性に優れ、かつネサパターンの目立
たない高品質の素子を得ることができた。
In both cases, high-quality elements with very excellent transparency and inconspicuous Nesa patterns could be obtained.

実施例6Example 6

Claims (1)

【特許請求の範囲】 ■、絶縁膜が一般式(I) 〔但し、Ar及び几は、二価の芳香族残基金示す。〕で
堀わされるくυ返し単位を有する芳香族ポリエーテルイ
ミド重合体からなることを特徴とする絶縁膜を有する素
子。 2、特許請求の範囲第1項記載において、前記の芳香族
ポリエーテルイミド重合体が、式(It)よりなる群か
ら選択した基を示し、Xはso2.co。 表わされる〈シ返し単位を有する重合体であること全特
徴とする絶縁Mを有する素子。 3.  t¥j許請求の範囲第1項記載において、前記
の芳香族ポリエーテルイミド重合体が、式(III)か
らなる群から選択され、XはO,SO,またはCOであ
る〕で表わされるくり返し単位を有する重合体であるこ
とを特徴とする絶縁膜を有する素子。 4、特許請求の範囲第1項、第2項、または第3項記載
において、前記の芳香族ポリエーテルイミド重合体層の
厚さが1〜300IJmであることを特徴とする絶縁膜
を有する素子。 5、特許請求の範囲第1項、第2項、第3項、または第
4項記載において、前記絶縁膜は半導体素子の表面をコ
ートしていることを特徴とする絶縁Mを有する素子。 6、特許請求の範囲第5項記載において、前記半導体素
子がメモリであ如、芳香族ポリエーテルイミド重合体層
の厚さが30−100μmでおること?特徴とする絶縁
膜を有する素子。 7、  vfWf請求の範囲第1項、第2項、第3項、
または第4項記載において、前記絶縁膜は液晶表示素子
の配向膜であることを特徴とする絶縁HMを有する素子
[Claims] (1) The insulating film has the general formula (I) [However, Ar and 几 represent divalent aromatic residues. 1. An element having an insulating film comprising an aromatic polyetherimide polymer having repeating units excavated with ]. 2. Claim 1, wherein the aromatic polyetherimide polymer represents a group selected from the group consisting of formula (It), and X represents so2. co. An element having an insulation M characterized in that it is a polymer having a cylindrical unit. 3. t¥j Claim 1, wherein the aromatic polyetherimide polymer is selected from the group consisting of formula (III), and X is O, SO, or CO. An element having an insulating film characterized by being a polymer having units. 4. An element having an insulating film according to claim 1, 2, or 3, wherein the aromatic polyetherimide polymer layer has a thickness of 1 to 300 IJm. . 5. An element having an insulation M according to claim 1, 2, 3, or 4, wherein the insulation film coats a surface of the semiconductor element. 6. In claim 5, if the semiconductor element is a memory, the thickness of the aromatic polyetherimide polymer layer is 30-100 μm? A device with a characteristic insulating film. 7. vfWf Claims 1, 2, 3,
Or according to item 4, the device having an insulating HM, wherein the insulating film is an alignment film of a liquid crystal display device.
JP57121166A 1982-07-14 1982-07-14 Element having insulating film Granted JPS5912420A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57121166A JPS5912420A (en) 1982-07-14 1982-07-14 Element having insulating film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57121166A JPS5912420A (en) 1982-07-14 1982-07-14 Element having insulating film

Publications (2)

Publication Number Publication Date
JPS5912420A true JPS5912420A (en) 1984-01-23
JPH0251167B2 JPH0251167B2 (en) 1990-11-06

Family

ID=14804473

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57121166A Granted JPS5912420A (en) 1982-07-14 1982-07-14 Element having insulating film

Country Status (1)

Country Link
JP (1) JPS5912420A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6091329A (en) * 1983-10-26 1985-05-22 Nissan Chem Ind Ltd Liquid crystal display device
JPS62174725A (en) * 1985-09-27 1987-07-31 Sanyo Electric Co Ltd Liquid crystal display device
JP2005042091A (en) * 2003-07-04 2005-02-17 Nitto Denko Corp Polyimide resin for electrically insulating material

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6091329A (en) * 1983-10-26 1985-05-22 Nissan Chem Ind Ltd Liquid crystal display device
JPS62174725A (en) * 1985-09-27 1987-07-31 Sanyo Electric Co Ltd Liquid crystal display device
JPH0261018B2 (en) * 1985-09-27 1990-12-18 Sanyo Denki Kk
JP2005042091A (en) * 2003-07-04 2005-02-17 Nitto Denko Corp Polyimide resin for electrically insulating material

Also Published As

Publication number Publication date
JPH0251167B2 (en) 1990-11-06

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