JPS59123231A - Device for automatic mask alignment - Google Patents
Device for automatic mask alignmentInfo
- Publication number
- JPS59123231A JPS59123231A JP57233421A JP23342182A JPS59123231A JP S59123231 A JPS59123231 A JP S59123231A JP 57233421 A JP57233421 A JP 57233421A JP 23342182 A JP23342182 A JP 23342182A JP S59123231 A JPS59123231 A JP S59123231A
- Authority
- JP
- Japan
- Prior art keywords
- laser light
- mask alignment
- light source
- automatic mask
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 201000010099 disease Diseases 0.000 claims 1
- 208000037265 diseases, disorders, signs and symptoms Diseases 0.000 claims 1
- 238000010586 diagram Methods 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 4
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011087 paperboard Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Control Of Position Or Direction (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は半導体装置の製造において４以１１虫刻技術に
用いられる自動マスク合せ装置（二関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to an automatic mask alignment device (2) used in 4 to 11 engraving techniques in the manufacture of semiconductor devices.
半導体装置は写真蝕刻技術を用い、マスクに描かれたパ
ターンをｍ数回重ね合わせて半導体基板に回路を形成す
ることにより製造される。Semiconductor devices are manufactured by using photolithographic techniques to overlay patterns drawn on masks several times to form circuits on a semiconductor substrate.
このマスクの重ね合せを行なうマスク合せ装置の合せ作
業はこれまで王に手動で行なわれてきたが、素子の微細
化（Ｌｒｊ向に伴い、設計回路の合せ余裕が少なくなる
に従って自１ｊｌＩで行なう機構が必要とされてきてい
る。Until now, the alignment work of the mask alignment equipment that performs this mask alignment has been done manually, but as elements become finer (Lrj direction), the design circuit alignment margin becomes smaller, is becoming necessary.
上述した自動マスク合せを行なう方法は１層目のマスク
（＝描かれたパターンを半神体店板に転写すると同時に
形成された合せターゲットマークを認識することにより
行なうものである。The above-described automatic mask alignment is performed by recognizing the alignment target mark formed at the same time as the first layer mask (=drawn pattern) is transferred to the demigod shop board.
この方法としては反射（ｇ号が十分得られる指向性のよ
いレーザ光の回折現象を利用している。This method utilizes the diffraction phenomenon of a laser beam with good directionality that provides sufficient reflection (g).
こうした自動マスク合せ装置、１・・１ｊえはス射投影
ｙ’に光における自動マスク合せ２−匝はＤＢ、 １図
に示す如く、ンーザ光？原１１ ミラー２、ハーフミラ
−３、対物レンズ４、集光用コンデンサレンズ５及び受
光部６を主要な、溝成要素としている。Such an automatic mask alignment device, 1...1j is an automatic mask alignment in the beam projection y' and the 2-unit is DB, as shown in Figure 1, the laser beam? Original 11 The main groove components include a mirror 2, a half mirror 3, an objective lens 4, a condenser lens 5 for condensing light, and a light receiving section 6.
七述した目！１ｊＪマスク合せ装置を用いた自動マスク
合せは以下のよう（ニして行なわれる。まず、対物レン
ズ４下方の図示しないステージＬの所定位置に半導体基
板７を設置する。次に、レーザ光′ｌｆ、１からレーザ
光８を照射すると、レーザ光８はミラー２で反射され、
ハーフミラ−３及び対物レンズ４を通過して半導体基板
７表面に達する。基板７表面の合せマーク近傍でレーザ
光８を定食すること（二より、回折や散乱を起こしたレ
ーザ光８は、対物レンズ４？通過してハーフミラ−３で
反射され、東光用コンデンサレンズ５を介して受光部６
に入射される。つづいて、予め測定された図示しないマ
スクのマーク位置とのずれを求める信号処理が行なわれ
、この信号に基づいてステージを移動させることにより
自動的にマスク合せが行なわれる。Seven mentioned eyes! Automatic mask alignment using the 1jJ mask alignment device is performed as follows (2). First, the semiconductor substrate 7 is placed at a predetermined position on the stage L (not shown) below the objective lens 4. Next, the laser beam 'lf When a laser beam 8 is irradiated from , 1, the laser beam 8 is reflected by the mirror 2,
The light passes through the half mirror 3 and the objective lens 4 and reaches the surface of the semiconductor substrate 7. The laser beam 8 is fixed near the alignment mark on the surface of the substrate 7 (from the second point, the laser beam 8 that has caused diffraction and scattering passes through the objective lens 4?, is reflected by the half mirror 3, and is reflected by the Toko condenser lens 5). through the light receiving section 6
is incident on the Subsequently, signal processing is performed to determine the deviation from a previously measured mark position on a mask (not shown), and mask alignment is automatically performed by moving the stage based on this signal.
ところで、従来の自分マスク合せ装置ｇ５においてはレ
ーザ光源として指向性、単芭性のよいＨｅ −Ｎ ｅ
レーザ光（波長＝６３２８Ａ）を］）〈４射するレーザ
光？原が用いられている。By the way, in the conventional self-mask matching device g5, He-N e with good directivity and monotony is used as a laser light source.
Laser light (wavelength = 6328A)]) <4 laser beams? Hara is used.
〔背景技術の問題点〕
上述したように従来の自動マスク合せ装置１１において
は単波長のＨｅ−Ｎｅレーザ光が使用されているため、
半導体基板表面に堆積されている絶縁膜の膜厚に応じて
干渉現象が起こり、反射信号に第２図に示すような周期
的な強弱り一発生する。この反射信号の強度が弱い場合
には自動合せができない。[Problems with Background Art] As mentioned above, the conventional automatic mask alignment device 11 uses a single wavelength He-Ne laser beam;
An interference phenomenon occurs depending on the thickness of the insulating film deposited on the surface of the semiconductor substrate, and periodic fluctuations in strength as shown in FIG. 2 occur in the reflected signal. If the intensity of this reflected signal is weak, automatic alignment cannot be performed.
こうした反射信号の強度分布の暗部はｍ−２ｎｔ／λ（
ｍ：整数、ｎ：絶縁膜の屈折率、ｔ：絶縁膜の膜厚、λ
：レーザ光の波長）となる絶縁膜の膜厚ｔで発生し、膜
厚依存性を有する。The dark part of the intensity distribution of such reflected signals is m-2nt/λ(
m: integer, n: refractive index of the insulating film, t: film thickness of the insulating film, λ
: wavelength of laser light), and has film thickness dependence.
本発明はＬ記事情に茜みてなされたものであり、半導体
基板表面の絶縁膜の；膜厚が変化しても富に十分な強度
の反射信号が得られ、確実に自動合せを行なうことかで
きる自動マスク合せ装置を提供しようとするものである
、
〔発明の４覗要〕
本発明の自動マスク合せ装置はレーザ光源として多波長
のレーザ光をＪ（、α射するレーデ光源を用いたことを
特徴とするものである。The present invention was made in consideration of the above circumstances, and it is possible to obtain a reflection signal of sufficient strength even if the film thickness of the insulating film on the surface of a semiconductor substrate changes, and to perform automatic alignment reliably. [4] Summary of the Invention The automatic mask matching device of the present invention uses a Rede light source that emits multiple wavelength laser beams as a laser light source. It is characterized by:
このよう（二条ｌ成長のレーザ光を用いれば、半導体基
板表面の絶縁膜の膜厚が変化しても、十分な強度の反射
信号を得ることができる−〔発明の実施例〕
以下、本発明の詳細な説明する。In this way, by using a laser beam with two-line growth, a sufficiently strong reflected signal can be obtained even if the thickness of the insulating film on the surface of the semiconductor substrate changes. Detailed explanation of.
本発明の自動マスク合せ装置は既述した第１図図示の自
動マスク合せ装置において、ｖ −ｆ光源１として多波
長レーザであるＡｒレーザを照射するレーザ光源が用い
られている。マスク合せは従来と同様に行なわれる。The automatic mask matching apparatus of the present invention is the automatic mask matching apparatus shown in FIG. 1 described above, in which a laser light source that emits an Ar laser, which is a multi-wavelength laser, is used as the v-f light source 1. Mask alignment is performed in the same manner as before.
Ａ ｒ Ｌ／ −サ光の波長ハ４８８０穴、！＝５１４
５八であり、こうした、Ａｒレーザ光を用いた場合、半
導体基板表面の絶縁膜のＭ ｌ１Ｆ−と反射信号の相対
強度との関係は第３因に示すようになる。A r L/ - The wavelength of the light is 4880 holes! =514
58, and when such Ar laser light is used, the relationship between M l1F- of the insulating film on the surface of the semiconductor substrate and the relative intensity of the reflected signal is as shown in the third factor.
しかして、本発明の自動マスク合せ装置によれは、第２
図と比較して明らかなように半導体基板表面の絶縁膜の
膜厚が変化しても反射信号のイ目対強度の強弱の差は激
減している。したがって、常に十分な強度の反射信号を
径ることかでき、自動マスク合せを確実に行なうことが
できる。However, according to the automatic mask matching device of the present invention, the second
As is clear from the comparison with the figure, even if the thickness of the insulating film on the surface of the semiconductor substrate changes, the difference in intensity of the reflected signal from eye to eye is drastically reduced. Therefore, it is possible to always receive a reflected signal of sufficient intensity, and automatic mask alignment can be performed reliably.
なお、Ｌ記実絶倒ではレーヅ′光諒として多波長のＡ’
ｒレーザ元源を用いたが、波長の異゛なるレーザ光を照
射し得る複数の単波長レーザ光源を用いて、膜厚に応じ
てレーザ光の波長を変化させることができるようにして
もよい。In addition, in L Kiki Jitsubaku, multi-wavelength A' is used as Rezu'koryo.
r laser source is used, but it is also possible to use a plurality of single wavelength laser light sources that can irradiate laser light with different wavelengths so that the wavelength of the laser light can be changed according to the film thickness. .
以り説明した如く、本発明によれば半導体栽板表面の絶
縁膜の膜厚が変化しても諧（二十分な強度の反射信号が
得られ、確実に目動合せを行なうことができる自動マス
ク合せ装置を提供できるものである。As explained above, according to the present invention, even if the thickness of the insulating film on the surface of the semiconductor board changes, a reflection signal of sufficient strength can be obtained, and alignment can be performed reliably. It is possible to provide an automatic mask matching device.
第１図は白玉（１マスク合せ装置のわ１成図、第２図は
従来のＳｌ肢長レしプ光諒を用いた自り１マスク合せ装
置における紙板表面の絶し膜の膜厚と反射信号の相対強
度との１力係を示す線図、第３図は本発明の実施例の、
Ａ＝ ｒレーサ゛光源を用いた自動マスク合せ装−′に
おける基板表面の絶縁膜の膜厚と反射信号の相対強度と
の関係を示す線図である。
１・・・レーザ光源、２・・・ミラー、３・・・ハーフ
ミラ−１４・・・対物レンズ、５・・・集光用コンデン
サレンズ、６・・・受光部、７・・・半導体基板、仁＝
；太４ｉ―・・・レーザ光。
出１願人代理人 弁理士 鈴 江 武 彦第１
図Figure 1 is a diagram of a single-mask matching device, and Figure 2 is a diagram showing the thickness of the insulating film on the surface of a paper board in a single-mask matching device using a conventional SL-length strip. FIG. 3 is a diagram showing the relationship between the relative strength of the reflected signal and the relative strength of the reflected signal.
FIG. 3 is a diagram showing the relationship between the thickness of the insulating film on the substrate surface and the relative intensity of the reflected signal in automatic mask alignment using an A=r laser light source. DESCRIPTION OF SYMBOLS 1... Laser light source, 2... Mirror, 3... Half mirror 14... Objective lens, 5... Condenser lens for condensing light, 6... Light receiving part, 7... Semiconductor substrate, Jin=
;Ta4i---Laser light. Patent Attorney Takehiko Suzue, Patent Attorney No. 1
figure
Claims (1)
射し、該マークでの反射色−号（二基づいて半導体基板
とマスクとの位置合せな行なう自動マスク合せ装置にお
いて、前記レーザ光源として多波長のレーザ光を照射す
るレーザ光源を用いたことを特徴と１−る自動マスク合
せ装置。In an automatic mask alignment device that irradiates a laser beam from a laser light source to a mark on the surface of a penumbra disease plate and aligns a semiconductor substrate and a mask based on the reflected color number (2) at the mark, the laser light source is used as the laser light source. 1. An automatic mask alignment device characterized by using a laser light source that emits laser light of multiple wavelengths.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57233421A JPS59123231A (en) | 1982-12-28 | 1982-12-28 | Device for automatic mask alignment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57233421A JPS59123231A (en) | 1982-12-28 | 1982-12-28 | Device for automatic mask alignment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59123231A true JPS59123231A (en) | 1984-07-17 |
Family
ID=16954790
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57233421A Pending JPS59123231A (en) | 1982-12-28 | 1982-12-28 | Device for automatic mask alignment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59123231A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08240919A (en) * | 1995-11-06 | 1996-09-17 | Hitachi Ltd | Light exposing method |
-
1982
- 1982-12-28 JP JP57233421A patent/JPS59123231A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08240919A (en) * | 1995-11-06 | 1996-09-17 | Hitachi Ltd | Light exposing method |
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