JPS59122922A - Device for measuring sucking degree of semiconductor wafer - Google Patents
Device for measuring sucking degree of semiconductor waferInfo
- Publication number
- JPS59122922A JPS59122922A JP23456582A JP23456582A JPS59122922A JP S59122922 A JPS59122922 A JP S59122922A JP 23456582 A JP23456582 A JP 23456582A JP 23456582 A JP23456582 A JP 23456582A JP S59122922 A JPS59122922 A JP S59122922A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor wafer
- sample
- sucking
- pressure sensor
- degree
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L5/00—Apparatus for, or methods of, measuring force, work, mechanical power, or torque, specially adapted for specific purposes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L5/00—Apparatus for, or methods of, measuring force, work, mechanical power, or torque, specially adapted for specific purposes
- G01L5/0061—Force sensors associated with industrial machines or actuators
- G01L5/0076—Force sensors associated with manufacturing machines
- G01L5/009—Force sensors associated with material gripping devices
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Force Measurement Appropriate To Specific Purposes (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
【発明の詳細な説明】 ［発明の技術分野］ 本発明は半導体ウェハの吸着度測定装置に関する。[Detailed description of the invention] [Technical field of invention] The present invention relates to an apparatus for measuring the adsorption degree of semiconductor wafers.
ＦＩＢ描画装置などを使用して半導体ウエノ・に直接描
画するに際しては、テーブルホルダ上の吸着盤に半導体
ウェハな確実に固定しなければならない。When drawing directly onto a semiconductor wafer using an FIB drawing device or the like, the semiconductor wafer must be securely fixed to a suction cup on a table holder.
その固定手段として、機械的チャック、真空チャック、
静電チャックが知られているう静電チャックにおいては
、半導体ウエノ１の吸着力を知る方法として、印加電圧
の値から、次式を使用して逆算するか、または概略値と
して半導体ウェハに流れるリーク電流を測定する方法が
用いられていた。Mechanical chucks, vacuum chucks,
In the electrostatic chuck, which is known as an electrostatic chuck, the method of determining the attraction force of the semiconductor wafer 1 is to calculate it backwards from the value of the applied voltage using the following formula, or to obtain an approximate value of the force flowing to the semiconductor wafer. A method of measuring leakage current was used.
［Ｆ Ｂ ：半導体ウエノ・とチャックとの間における
絶縁層の比誘電率、
ｖａ：半導体ウェハ上の電位
■ｂ：テヤンク上の電位
Ａ：チャックの面積
Ｄ＝チャックの電極と半導体ウエノ１との間の距離
しかしながら、周知のように半導体ウエノ・は−そり負
があるので、印加電圧値だけではど−−ゝ
、
−一亡Ｆ咽ｌ芹酪廿割杓牲り１書おとの程度の力で
半導体ウェハ全面が固定されているのかが不明である。[FB: Relative permittivity of the insulating layer between the semiconductor wafer and the chuck, va: Potential on the semiconductor wafer b: Potential on the yank A: Area of the chuck D = between the chuck electrode and the semiconductor wafer 1 However, as is well known, semiconductor materials have a negative warpage, so the distance between them cannot be determined by just the applied voltage value.
,
- It is unclear whether the entire surface of the semiconductor wafer is fixed with a force of less than one inch.
また、半導体ウェハに流れるリーク電流は、ｎＡオーダ
であるから、これは電極を支える絶縁物に流れるリーク
電流の値とほとんど変わらない。従って半導体ウェハに
流れるリーク電流から半導体ウェハの吸着力を測定する
ことは困難である。Furthermore, since the leakage current flowing through the semiconductor wafer is on the order of nA, this is almost the same value as the leakage current flowing through the insulator supporting the electrode. Therefore, it is difficult to measure the attraction force of the semiconductor wafer from the leakage current flowing through the semiconductor wafer.
本発明は上記事情に基づいてなされたもので、半導体ウ
ェハがどの程度の力で、チャック面（吸着盤上）に吸着
固定されているかを定量的に測定することができる半導
体ウェハの吸着度測定装置を得ることを目的としている
。The present invention has been made based on the above-mentioned circumstances, and is a semiconductor wafer suction degree measurement method that can quantitatively measure how much force a semiconductor wafer is suctioned and fixed to a chuck surface (on a suction cup). The purpose is to obtain equipment.
Ｃ発明の概９）
本発明においては、テーブルホルダ上の吸着盤の少なく
とも１箇所に、その上面上に吸着される半導体ウェハに
よって相対的に押されるように圧力センサを埋設し、こ
の圧力センサの出力信号に基づいて半導体ウェハの吸着
度を知るようにすることによって、前記目的を達成して
いる。C Overview of the Invention 9) In the present invention, a pressure sensor is embedded in at least one location of the suction cup on the table holder so as to be relatively pressed by the semiconductor wafer suctioned onto the upper surface of the suction cup, and the pressure sensor is The above object is achieved by determining the degree of adsorption of the semiconductor wafer based on the output signal.
し発明の実施例〕
第１図はこの発明の一実施例を示す断面図である。図中
１はテーブルホルタであり、実際描画の場合はこのテー
ブルホルダ１がＸ、Ｙ軸平面Ｎ上を移動する。２は全面
にアルミナ等の絶縁被膜を施こした吸着盤であり、この
吸着盤２はテーブル４及び５は、それぞれ吸着盤２およ
び試料３に電気的接続した電極である。これら電極４．
５に、電源６から高電圧を印加し、吸着盤２と試料３と
の間に静電力を発生させることによって、試料３は吸着
盤２上面上に吸着固定される。Embodiment of the Invention FIG. 1 is a sectional view showing an embodiment of the invention. In the figure, 1 is a table holder, and in actual drawing, this table holder 1 moves on the X- and Y-axis plane N. Reference numeral 2 denotes a suction cup whose entire surface is coated with an insulating coating such as alumina, and tables 4 and 5 of this suction cup 2 are electrodes electrically connected to the suction cup 2 and the sample 3, respectively. These electrodes4.
5, a high voltage is applied from the power supply 6 to generate an electrostatic force between the suction cup 2 and the sample 3, so that the sample 3 is suctioned and fixed onto the upper surface of the suction cup 2.
吸着盤２には、上下に貫通した孔２ａが形成されており
、この孔２ａ中に半導体圧力センサ７が挿入されている
。圧力センサ７の出力信号は、吸着度を測定して得た値
を演算するだめの演算器８に入力される。A hole 2a is formed in the suction cup 2 and extends vertically through the suction cup 2, and a semiconductor pressure sensor 7 is inserted into the hole 2a. The output signal of the pressure sensor 7 is input to a calculator 8 which calculates the value obtained by measuring the degree of adsorption.
９はテーブルホルダ１上に置かれたスプリングであり、
このスプリング９上には圧力センサ７が載置されている
。スプリング９は、圧力センサ７の上端面が、吸着盤２
の上曲上より若干（０，１〜０２門程度）突出するよう
にその高さが選定されている。9 is a spring placed on the table holder 1;
A pressure sensor 7 is mounted on this spring 9. The spring 9 is arranged such that the upper end surface of the pressure sensor 7 is connected to the suction cup 2.
Its height is selected so that it protrudes slightly (about 0.1 to 0.2 gates) from the upper curve of the top.
以上のようにこの実施例は構成されているので吸着盤２
と試料３とに高電圧を印加して吸着盤２に試料３を吸引
させると、試料３が圧力センサ７を下方に押し付ける。Since this embodiment is configured as described above, the suction cup 2
When a high voltage is applied to the sample 3 and the suction cup 2 to attract the sample 3, the sample 3 presses the pressure sensor 7 downward.
このため圧力センサ７はこの押付力を受けて、スプリン
グ９の弾力に抗して沈み、試料３は吸着盤２上面に吸着
固定される。Therefore, the pressure sensor 7 receives this pressing force and sinks against the elasticity of the spring 9, and the sample 3 is suctioned and fixed to the upper surface of the suction cup 2.
一方、このときの圧力センサ７の出力信号の値を加算器
８において測定することによって、試料３の吸着度が定
量的に得られる。スプリング９のバネ定数を変えること
によって、圧力センサ７の検出感度を調節することがで
きる。On the other hand, by measuring the value of the output signal of the pressure sensor 7 at this time in the adder 8, the degree of adsorption of the sample 3 can be obtained quantitatively. By changing the spring constant of the spring 9, the detection sensitivity of the pressure sensor 7 can be adjusted.
なお、第２図に平面図で示すように、吸着盤の数ケυ丁
に、圧力センサ７を設けることによって、吸着盤２の全
体における試料３の密着度を知ることができる。また、
圧力センサ７をスズリング９の代りに適当な昇降機構上
に載置し、吸着盤２上に試料３を吸着した後、圧力セン
サ７を、昇降機構によって、試料３の下面に押し上けて
、ｎ＋＋ｒ定ダイナミックレンジを広げ吸着度を測定す
ることもできる。さらに、上述のような静電チャック構
造以外に機械的チャック、真空チャックにも本発明は適
用可能である。As shown in a plan view in FIG. 2, the degree of adhesion of the sample 3 to the entire suction cup 2 can be determined by providing pressure sensors 7 on several pieces of the suction cup 2. Also,
The pressure sensor 7 is placed on a suitable elevating mechanism instead of the tin ring 9, and the sample 3 is adsorbed onto the suction cup 2, and then the pressure sensor 7 is pushed up onto the lower surface of the sample 3 by the elevating mechanism. It is also possible to measure the degree of adsorption by widening the n++r constant dynamic range. Further, in addition to the electrostatic chuck structure as described above, the present invention is also applicable to mechanical chucks and vacuum chucks.
第３図に示すように、圧力センサ７の出力信号値を、基
準電圧設定器】０からの吸着力に換算した基準電圧値と
、帰還増巾器１１において比較しこの帰還増巾器１１に
おいて比較し、この帰還増巾器１１からの前記両入力の
偏差に対応した出力信号を、高電圧発生装置１２にフィ
ードバックして、前記偏差がなくなるように、電極４．
５に高電圧発生装置１２から印加される高電圧の値を制
御し、もって、試料３の吸着力を一定にすることもでき
る。As shown in FIG. 3, the output signal value of the pressure sensor 7 is compared with the reference voltage value converted into the adsorption force from the reference voltage setter 0 in the feedback amplifier 11. The output signal from the feedback amplifier 11 corresponding to the deviation between the two inputs is fed back to the high voltage generator 12, and the electrodes 4.
By controlling the value of the high voltage applied from the high voltage generator 12 to the sample 3, the adsorption force of the sample 3 can be made constant.
以上訝明したように、本発明によれば、半導体ウェハの
吸着度を極めて確実に定量的に測定することができる。As explained above, according to the present invention, the degree of adsorption of a semiconductor wafer can be quantitatively measured extremely reliably.
【図面の簡単な説明】
第１図は本発明−実施例の断面図、第２図は本発明の他
の実施例の一部を示す平面図、第３図は本発明のさらに
他の実施例の断面図である。
１・・・テーブルホルダ、 ２・・・吸着盤、３・・
・試料、 ７・・・半導体圧力センサ、 ８・・・
演算器。
出願代凱人 弁理士 菊 池 五 部
茅 ｌ ＠
弗 ２ 図
第 ３ 回
、５
／４[Brief Description of the Drawings] Fig. 1 is a sectional view of an embodiment of the present invention, Fig. 2 is a plan view showing a part of another embodiment of the invention, and Fig. 3 is a further embodiment of the present invention. FIG. 3 is an example cross-sectional view. 1...Table holder, 2...Suction cup, 3...
・Sample, 7... Semiconductor pressure sensor, 8...
Arithmetic unit. Application agent Kaito Patent attorney Kikuchi Gobe Kaya l @ 弗 2 Figure 3rd, 5/4
Claims (1)
上面上に吸着される半導体ウエノ・によって相対的に押
されるように埋設された圧力センサと、前記圧力センナ
からの信号に基づい吸着度測定装置。A pressure sensor embedded in at least one location of a suction cup on a table holder so as to be relatively pressed by a semiconductor wafer suctioned onto the upper surface thereof, and a suction degree measuring device based on a signal from the pressure sensor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23456582A JPS59122922A (en) | 1982-12-28 | 1982-12-28 | Device for measuring sucking degree of semiconductor wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23456582A JPS59122922A (en) | 1982-12-28 | 1982-12-28 | Device for measuring sucking degree of semiconductor wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59122922A true JPS59122922A (en) | 1984-07-16 |
| JPH0368330B2 JPH0368330B2 (en) | 1991-10-28 |
Family
ID=16973002
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23456582A Granted JPS59122922A (en) | 1982-12-28 | 1982-12-28 | Device for measuring sucking degree of semiconductor wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59122922A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04206546A (en) * | 1990-11-30 | 1992-07-28 | Hitachi Ltd | Method and device for plasma treatment |
| JPH0922899A (en) * | 1995-05-02 | 1997-01-21 | Nissin Electric Co Ltd | Vacuum processing device and method of obtaining target workpiece by device |
| KR101362673B1 (en) * | 2006-11-03 | 2014-02-12 | 엘아이지에이디피 주식회사 | Electro static force measuring apparatus and electro static force measuring method |
-
1982
- 1982-12-28 JP JP23456582A patent/JPS59122922A/en active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04206546A (en) * | 1990-11-30 | 1992-07-28 | Hitachi Ltd | Method and device for plasma treatment |
| JPH0922899A (en) * | 1995-05-02 | 1997-01-21 | Nissin Electric Co Ltd | Vacuum processing device and method of obtaining target workpiece by device |
| KR101362673B1 (en) * | 2006-11-03 | 2014-02-12 | 엘아이지에이디피 주식회사 | Electro static force measuring apparatus and electro static force measuring method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0368330B2 (en) | 1991-10-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Delchar et al. | A static capacitor method for the measurement of the surface potential of gases on evaporated metal films | |
| JPS5979545A (en) | Electrostatic chucking device | |
| US6215640B1 (en) | Apparatus and method for actively controlling surface potential of an electrostatic chuck | |
| JP4163911B2 (en) | Semiconductor wafer test method and semiconductor wafer test apparatus | |
| JPS59122922A (en) | Device for measuring sucking degree of semiconductor wafer | |
| US6781205B1 (en) | Electrostatic charge measurement on semiconductor wafers | |
| WO2006030723A1 (en) | Semiconductor wafer evaluating method and semiconductor wafer evaluating apparatus | |
| US5097214A (en) | Method and apparatus for determining the properties of an insulation layer by maintaining an output current ratio generated by directing ions at the insulation layer | |
| JP3771766B2 (en) | Electrostatic chuck evaluation apparatus and electrostatic chuck evaluation method | |
| JPS58220438A (en) | Measuring placing stand for semiconductor wafer | |
| JPS63138745A (en) | Structure of base plate for prober | |
| JPS6114660B2 (en) | ||
| JP2507213Y2 (en) | Vacuum suction board for semiconductor wafer processing and measurement | |
| JPS6311426B2 (en) | ||
| JPH01162103A (en) | Electronically measuring apparatus for surface especially applicable for inspection of connection part | |
| JPH07142431A (en) | Wafer bonder | |
| JP2000216228A (en) | Substrate fixing stage | |
| JPH09280852A (en) | Holder for thin sheet, method for measuring thickness of thin sheet and instrument therefor | |
| JP4007597B2 (en) | Capacitance sensor type measuring device | |
| JPH0866071A (en) | Electrostatic attraction apparatus | |
| JP2709351B2 (en) | CV characteristic conversion method in non-contact CV measurement device | |
| JP4514944B2 (en) | Film thickness measuring device | |
| JP2005172503A (en) | Measuring apparatus using capacitance sensor and manufacturing device using same | |
| JPH06334024A (en) | Substrate retainer | |
| JPH03290940A (en) | Wafer table of probing machine |