JPS59121176A - Ceramic metallization - Google Patents

Ceramic metallization

Info

Publication number
JPS59121176A
JPS59121176A JP23110282A JP23110282A JPS59121176A JP S59121176 A JPS59121176 A JP S59121176A JP 23110282 A JP23110282 A JP 23110282A JP 23110282 A JP23110282 A JP 23110282A JP S59121176 A JPS59121176 A JP S59121176A
Authority
JP
Japan
Prior art keywords
ceramic
copper sulfide
copper
kaolin
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23110282A
Other languages
Japanese (ja)
Inventor
江畑 儀弘
速水 諒三
木下 実
正也 伊藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Nippon Tokushu Togyo KK
Niterra Co Ltd
Original Assignee
Agency of Industrial Science and Technology
NGK Spark Plug Co Ltd
Nippon Tokushu Togyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology, NGK Spark Plug Co Ltd, Nippon Tokushu Togyo KK filed Critical Agency of Industrial Science and Technology
Priority to JP23110282A priority Critical patent/JPS59121176A/en
Publication of JPS59121176A publication Critical patent/JPS59121176A/en
Pending legal-status Critical Current

Links

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 本発明はセラミック表面に金属銅のメタライズ層を形成
する方法に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of forming a metallized layer of metallic copper on a ceramic surface.

セラミックは耐熱性、耐摩耗性、絶縁性に優れ金属に代
わる新材料として注目されている。しかしセラミックは
もろく衝撃にも弱いので構造材としてセラミック単独で
用いられることはまれで実際に使用する場合は金属と接
合して使用するのが普通である。
Ceramic is attracting attention as a new material that can replace metals due to its excellent heat resistance, wear resistance, and insulation properties. However, since ceramic is brittle and susceptible to impact, it is rarely used alone as a structural material, and when actually used, it is usually used in conjunction with metal.

金属とセラミックとを接合するにはまずセラミック表面
をメタライズする必要がある。
To join metal and ceramic, it is first necessary to metalize the ceramic surface.

従来よりセラミック表面に金属層を形成する方法として
は、テレフンケン法、活性金属法、水素化合物法、金属
酸化物法、炭酸銀法等数多くの技術がある。
Conventionally, there are many techniques for forming a metal layer on a ceramic surface, such as the Telefunken method, the active metal method, the hydride method, the metal oxide method, and the silver carbonate method.

これらの方法は、工程が複雑であったり多くの場合真空
中又は非酸化性雰囲気で加熱処理するものである。
These methods involve complicated steps and often involve heat treatment in vacuum or in a non-oxidizing atmosphere.

特公昭47−2°1569号はCuS粉末にカオリン粉
末を混合したペーストをセラミックに塗布し空気中にお
いて1200〜1300℃の温度で加熱した後、これを
取り出して約800℃で再加熱しながら炭酸銀を散布す
る方法である。
In Japanese Patent Publication No. 47-2°1569, a paste made by mixing CuS powder and kaolin powder is applied to ceramic, heated in air at a temperature of 1200 to 1300°C, and then taken out and reheated at about 800°C while carbonated. This is a method of dispersing silver.

この方法では強固な接着強度は得られるが、銀被膜作成
のため計2回の加熱作業工程が必要となる。又銀を使用
するという点でコスト的に不利であり、実際に使用する
ことが困難であった。特開昭53−130714号も、
銀を使用するという点で同様である。又、高融点金属法
は焼付温度が1400℃以上、雰囲気も非酸化性雰囲気
であり、高価な雰囲気炉が必要である。
This method provides strong adhesive strength, but requires a total of two heating steps to create the silver coating. Furthermore, since it uses silver, it is disadvantageous in terms of cost, and it is difficult to actually use it. JP-A No. 53-130714 also
It is similar in that silver is used. Further, in the high melting point metal method, the baking temperature is 1400° C. or higher, the atmosphere is non-oxidizing, and an expensive atmosphere furnace is required.

本発明は、かかる難点に着目し、更に強力な接着力を有
し、又導電性良好なメタライズ層をセラミック表面に形
成することを目的として鋭意研究を続けた結果、達成さ
れたものである。
The present invention was achieved as a result of intensive research focused on these difficulties and with the aim of forming a metallized layer on the ceramic surface that has even stronger adhesion and good conductivity.

本発明はセラミックの表面に硫化銅又はこれとカオリン
とを含んだ混合物を均一に塗布し、大気中又は窒素含有
雰囲気中で900℃以上の温度で加熱反応せしめて焼付
被覆層を設け、次いでこの焼付被覆層を還元してセラミ
ックの表面に金属銅のメタライズ層を設ける方法である
In the present invention, copper sulfide or a mixture containing copper sulfide and kaolin is uniformly applied to the surface of a ceramic, and a heat reaction is performed at a temperature of 900°C or higher in the air or a nitrogen-containing atmosphere to form a baked coating layer. This is a method of reducing the baked coating layer to provide a metallized layer of metallic copper on the surface of the ceramic.

本発明の方法においては、900℃以上の温度で焼き付
けて設けられたAAzOa−8i 02−CLIからな
る3成分系化合物を還元して出来る金属銅のメタライズ
層が特に好ましい効果を与える。
In the method of the present invention, a metallized layer of metallic copper produced by reducing a three-component compound of AAzOa-8i 02-CLI baked at a temperature of 900° C. or higher provides a particularly favorable effect.

900℃以上に加熱することにより硫化銅はCUとSと
に分解し、Cuはカオリンと共に、AQzOa−8! 
02−CLIからなる3成分系の比較的低融点の化合物
となりカオリン自体あるいは硫化銅自体よりも融点が低
下し、この化合物がセラミック内に浸透し、セラミック
と反応してカオリンを含まない場合より強固な接着力が
得られる。
By heating above 900°C, copper sulfide decomposes into CU and S, and Cu, together with kaolin, AQzOa-8!
02-CLI becomes a 3-component compound with a relatively low melting point than kaolin itself or copper sulfide itself, and this compound penetrates into the ceramic and reacts with the ceramic, making it stronger than when it does not contain kaolin. Provides strong adhesion.

一方、硫化銅の分解により発生するSはセラミックに対
し活性を有するので上記3成分系化合物のセラミック内
への浸透、反応を助長し完全にするものと考えられる。
On the other hand, since S generated by the decomposition of copper sulfide has activity against ceramics, it is thought that it promotes the penetration of the three-component compound into the ceramic and completes the reaction.

特に900℃以上であればSの活性度が高まり効果が大
きい。ここで硫化銅以外の銅化合物を用いた場合、例え
ば酸化第1銅の場合には、上記Sの効果がなく、A立z
Oa−8iO2−Cuからなる3成分系化合物のセラミ
ック内への浸透、反応が不十分で、還元後の接着力が弱
かった。
In particular, if the temperature is 900°C or higher, the activity of S increases and the effect is great. When a copper compound other than copper sulfide is used, for example, cuprous oxide, the above-mentioned effect of S is not obtained, and the
Penetration and reaction of the three-component compound consisting of Oa-8iO2-Cu into the ceramic were insufficient, and the adhesive strength after reduction was weak.

還元方法としては水素雰囲気中での加熱、−酸化炭素雰
囲気中での加熱、炭化水素による還元等、硫化銅が金属
銅に還元され導電性が得られればどんな方法でもよい。
As the reduction method, any method may be used as long as copper sulfide is reduced to metallic copper and conductivity is obtained, such as heating in a hydrogen atmosphere, heating in a -carbon oxide atmosphere, and reduction with hydrocarbons.

硫化銅と力゛オリンの混合割合は前者100〜20:重
量%に対し、後者0〜80重量%が望ましくカオリンの
量がこれより多くても少なくても中間層の接着力、浸透
性は低下ぎみで好ましくない。
The mixing ratio of copper sulfide and kaolin is preferably 100 to 20% by weight for the former, and 0 to 80% by weight for the latter.If the amount of kaolin is greater or less than this, the adhesion and permeability of the intermediate layer will decrease. It's unpleasant and undesirable.

又、硫化銅が20%′以下の場合、還元後の十分な導電
性が得にくい。
Furthermore, if the copper sulfide content is less than 20%', it is difficult to obtain sufficient conductivity after reduction.

上記ペースト焼付行程における加熱条件は、セラミック
の形状、大きさ、あるいはカオリンの質により一義的に
定め難いが、通常900℃な(rN L/1400℃の
温度で3〜30分加熱される。900℃未満の温度では
上記反応が低下ぎみになるの”で反応性の点から900
℃以上が好ましく、1400℃を越える温度では粘性が
低下ぎみとなるので中間層形成の点からは1400℃以
下が好ましい。還元時の加熱は反応層の分解、変質等を
防ぐため前記反応温度よりも低い方が好ましい。又、メ
タライズしたレラミツクと金属とをろう接等の方法で接
合する場合の加熱も前記反応温度よりも低い方が好まし
い。
The heating conditions in the paste baking process cannot be determined uniquely depending on the shape and size of the ceramic or the quality of the kaolin, but it is usually heated at a temperature of 900°C (rN L/1400°C for 3 to 30 minutes.900 The above reaction tends to decrease at temperatures below 900℃ from the point of view of reactivity.
The temperature is preferably 1,400°C or higher, and since the viscosity tends to decrease at temperatures exceeding 1,400°C, the temperature is preferably 1,400°C or lower from the viewpoint of forming an intermediate layer. The heating during reduction is preferably lower than the reaction temperature described above in order to prevent decomposition, alteration, etc. of the reaction layer. Further, when joining the metallized reramic and metal by a method such as brazing, it is preferable that the heating be lower than the reaction temperature.

以上詳述した如く、本発明のセラミックのメタライズ方
法は、セラミックの表面に硫化銅又は硫化銅とカオリン
とを含んだ焼付被m層を設けた後上記焼付被覆層を還元
することにより導電性良好でかつ、金属との接合性良好
な金属銅のメタライズ層をセラミック表面に形成するこ
とが可能となった。
As detailed above, the ceramic metallization method of the present invention provides good electrical conductivity by providing a baking layer containing copper sulfide or copper sulfide and kaolin on the surface of the ceramic, and then reducing the baking coating layer. It has become possible to form a metalized layer of copper on the ceramic surface that is large and has good bonding properties with metal.

本発明により作成された金属銅のメタライズ層を表面に
有するセラミックは上記の如くの性能を有するので、セ
ラミックパッケージ等の電子部品、セラミックを用いた
耐摩耗部品、耐熱性部品等への応用が可能である。
Since the ceramic having a copper metallized layer on its surface produced by the present invention has the above-mentioned performance, it can be applied to electronic components such as ceramic packages, wear-resistant parts using ceramic, heat-resistant parts, etc. It is.

次に本発明の実施例を示す。Next, examples of the present invention will be shown.

実施例 硫化銅90重量部とカオリン10重量部を混合しこれに
バルサムを加えてペースト状の混合物を得た。この混合
物を平板正方状の3 i 3 N a 、サイアロン、
SiC又はAAzOaの焼結体に、混合物の重量で0.
1o/αδ相当量を塗布した。
Example 90 parts by weight of copper sulfide and 10 parts by weight of kaolin were mixed, and balsam was added to the mixture to obtain a paste-like mixture. This mixture was formed into a square plate of 3 i 3 N a , Sialon,
A sintered body of SiC or AAzOa is coated with 0.0% by weight of the mixture.
An amount equivalent to 1o/αδ was applied.

次に電気炉を用い大気中で1200℃にて焼成し被覆層
を形成した。
Next, it was fired at 1200° C. in the air using an electric furnace to form a coating layer.

焼成したものを乾燥器中で300℃に加熱した後、市販
のエラツール中に浸した。これにより被覆層が還元され
金属銅のメタライズ層を形成した。
The fired product was heated to 300°C in a dryer and then immersed in a commercially available Elatool. As a result, the coating layer was reduced to form a metallized layer of metallic copper.

第1表に還元前後の焼付被覆層の電気抵抗を示した。Table 1 shows the electrical resistance of the baked coating layer before and after reduction.

かくして得゛たメタライズ層を有するセラミックと銅片
とを銀ろうを用いてろう接し、秤111ton 。
The thus obtained ceramic having the metallized layer was soldered to a copper piece using silver solder, and the weight was 111 tons.

荷重速5t5mm/minの引張試験機を用いてその接
着強度を測定したところ、S! aNaで350k。
When the adhesive strength was measured using a tensile tester with a loading speed of 5t5mm/min, it was S! 350k in aNa.

/−、サイアロンで400 k(1/aA、SiCで3
50k(110晶、A立zOaで600 ka/−の強
度が得られ、極めて強力に接着されていることが認めら
れlc0
/-, 400 k for SiAlON (1/aA, 3 for SiC
50k (110 crystal, A 600 ka/- strength was obtained at zOa, and it was recognized that the bond was extremely strong.

Claims (1)

【特許請求の範囲】[Claims] 1 セラミック表面に硫化銅又は硫化銅と力Aリンとを
含んだ焼付被覆層を設けた後、該焼付被覆層を還元する
ことを特徴とするセラミックのメタライズ方法。
1. A method for metallizing ceramics, which comprises providing a baked coating layer containing copper sulfide or copper sulfide and phosphorus on a ceramic surface, and then reducing the baked coating layer.
JP23110282A 1982-12-24 1982-12-24 Ceramic metallization Pending JPS59121176A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23110282A JPS59121176A (en) 1982-12-24 1982-12-24 Ceramic metallization

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23110282A JPS59121176A (en) 1982-12-24 1982-12-24 Ceramic metallization

Publications (1)

Publication Number Publication Date
JPS59121176A true JPS59121176A (en) 1984-07-13

Family

ID=16918327

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23110282A Pending JPS59121176A (en) 1982-12-24 1982-12-24 Ceramic metallization

Country Status (1)

Country Link
JP (1) JPS59121176A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6021888A (en) * 1983-07-18 1985-02-04 工業技術院長 Metallization of ceramics

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6021888A (en) * 1983-07-18 1985-02-04 工業技術院長 Metallization of ceramics
JPS6261557B2 (en) * 1983-07-18 1987-12-22 Kogyo Gijutsuin

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