JPS59117323A - Resistor module - Google Patents

Resistor module

Info

Publication number
JPS59117323A
JPS59117323A JP23166782A JP23166782A JPS59117323A JP S59117323 A JPS59117323 A JP S59117323A JP 23166782 A JP23166782 A JP 23166782A JP 23166782 A JP23166782 A JP 23166782A JP S59117323 A JPS59117323 A JP S59117323A
Authority
JP
Japan
Prior art keywords
resistor
signal line
resistor module
module
power supply
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23166782A
Other languages
Japanese (ja)
Inventor
Masahiko Kumagai
雅彦 熊谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP23166782A priority Critical patent/JPS59117323A/en
Publication of JPS59117323A publication Critical patent/JPS59117323A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/082Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
    • H03K19/086Emitter coupled logic

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Logic Circuits (AREA)

Abstract

PURPOSE:To obtain a resistor module by which a signal line is terminated effectively by connecting a power supply to a terminal connected in common to the resistor module via a semiconductor element. CONSTITUTION:A logical circuit 1 is constituted by using ECL elements and a termination resistor R1 matched to a characteristic impedance Z0 of a signal line 4 is used to prevent the generation of a delay at high speed switching by the reflection of the signal line 4. Since a power supply VEE is connected to a common connecting terminal 9 of the resistor R1 via a Zener diode 7 and a bypass capacitor 8, the relation of Z0=R1 is set without applying excessive load to the ECL gate 1. Thus, the resistor module possible for high density mounting is obtained.

Description

【発明の詳細な説明】 この発明は重子回路部品である抵抗モジュールに関する
ものであり、特に信号線路をその特性インピーダンスに
等しい抵抗値によって終端するための終端抵抗を構成す
る抵抗モジュールに関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a resistor module that is a multiplex circuit component, and more particularly to a resistor module that constitutes a terminating resistor for terminating a signal line with a resistance value equal to its characteristic impedance.

ECLr <、 Emitter Coupled L
ogic )素子を用いて論理回路を構成する場合、信
号線路の反射により高速スイッチング時に遅れが発生す
ることを防止するため、信号線路の特性インピーダンス
に整合させた終端抵抗が用いられる。
ECLr <, Emitter Coupled L
When configuring a logic circuit using Logic) elements, a terminating resistor that matches the characteristic impedance of the signal line is used to prevent delays during high-speed switching due to reflections on the signal line.

第1図は従来のこの種の回路の一例を示す接続図であっ
て、(1)はECLゲート、(2)はICパッケージ、
(3)は抵抗モジュール、(41ハ信号線路、VEE 
、 V7Tはそれぞれ別の電源、ZOU信号線路(4)
の特性インピーダンス、R1は抵抗モジュール(3)の
各抵抗の抵抗値である。Zo=R□に設定されているの
で信号線路(4)の終端における反射は起らない。通常
l VEEI > l VTTI K設定する。但し、
第1図テハイ百号線路(41の終端に関係のない接続線
は示してない。
FIG. 1 is a connection diagram showing an example of a conventional circuit of this type, in which (1) is an ECL gate, (2) is an IC package,
(3) is a resistance module, (41c signal line, VEE
, V7T has separate power supply and ZOU signal line (4)
The characteristic impedance of R1 is the resistance value of each resistor of the resistor module (3). Since Zo=R□, no reflection occurs at the end of the signal line (4). Normally, l VEEI > l VTTI K is set. however,
Fig. 1 Tehi No. 100 line (connecting lines unrelated to the termination of 41 are not shown).

′電源VEEとVTTとがもし共通の軍律であり、共通
の内部回路を持っているとその共通の内部回路を通じて
ECL fi+ 、信号線路(4)、抵抗モジュール(
31を経る閉回路が構成され、信号電流の他に(VEE
VTr)/R1で定められる余分な電流がECLゲ−ト
fi+の負荷となり、ゲートの駆動能力に問題を生じる
他、(VER−VTT ) / R□の重力損失による
余分な発熱が生じることになる。したがって、このよう
なことを避けるため電源VTTは電源VEEとは別に設
けなければならないという欠点がある。
'If the power supply VEE and VTT are of a common military type and have a common internal circuit, the ECL fi+, signal line (4), and resistor module (
A closed circuit passing through 31 is constructed, and in addition to the signal current (VEE
The extra current determined by VTr)/R1 becomes a load on the ECL gate fi+, which causes problems with the gate drive ability, and causes extra heat generation due to the gravitational loss of (VER-VTT)/R□. . Therefore, there is a drawback that the power supply VTT must be provided separately from the power supply VEE in order to avoid such a problem.

第2図は従来の回路の他の例を示す接続図で、第1図と
同一符号は同一部分を示し、(5)は抵抗モジュール、
R2,R3はそれぞれの抵抗の抵抗値である。
FIG. 2 is a connection diagram showing another example of the conventional circuit, in which the same symbols as in FIG. 1 indicate the same parts, (5) is a resistance module,
R2 and R3 are the resistance values of the respective resistors.

第2図の回路では1/Zo = 1/R2+ MR3に
設定してインピーダンス整合を行う。第2図に示すとお
りこの回路では抵抗モジュール(5)に接地端子が必要
となるため、抵抗モジュールの外形寸法の増大、さらV
Cは端子数の増加により高密度実装を妨げる欠点がある
In the circuit shown in FIG. 2, impedance matching is performed by setting 1/Zo=1/R2+MR3. As shown in Figure 2, this circuit requires a ground terminal for the resistor module (5), which increases the external dimensions of the resistor module and further increases the voltage
C has the disadvantage that high-density packaging is hindered due to an increase in the number of terminals.

この発明は従来のものの上記の欠点を除去するためにな
されたもので、別の電源を用いることもなく、かつ抵抗
モジュールのビン数を増加することもなく信号線路を有
効に終端することのできる抵抗モジュールを提供するこ
とを目的としている。
This invention was made to eliminate the above-mentioned drawbacks of the conventional ones, and it is possible to effectively terminate a signal line without using a separate power supply or increasing the number of resistor module bins. The purpose is to provide a resistance module.

このためこの発明ではmLゲートの電源を半導体素子を
介して抵抗モジュールの抵抗の共通端子に加えることに
よりEeLゲートに余分の電流が負荷されることを防止
したもので、以1図面によってこの発明の詳細な説明す
る。
Therefore, in this invention, the power supply of the mL gate is applied to the common terminal of the resistor of the resistance module through the semiconductor element, thereby preventing extra current from being loaded on the EeL gate. Detailed explanation.

第3図はこの発明の一実施例を示す接続図で、第1図と
同一符号は同一部分を示し、(6)は抵抗モジュール、
(7)は半導体素子でツェナダイオード又は普通のダイ
オード、(81はバイパスコンデンサ、(9)は枠数の
抵抗素子の共通の接続点である。
FIG. 3 is a connection diagram showing an embodiment of the present invention, in which the same reference numerals as in FIG. 1 indicate the same parts, and (6) is a resistance module;
(7) is a semiconductor element such as a Zener diode or an ordinary diode, (81 is a bypass capacitor, and (9) is a common connection point for the number of resistor elements.

R1=Z、に設定すればインピーダンス整合終端を構成
することができる。半導体素子(7)の重圧降下分をV
D  とすれば接続点(9)の電圧■9はv9 = v
□−VD  となる。V9を第1図のvTTに等しくす
れば抵抗モジュール(6)に加えられる電圧は第3図と
第1図において等価となり、かつ半導体素子f71の存
在のためECLゲート(ilVC余分な負荷が加わるこ
とはない。
By setting R1=Z, an impedance matching termination can be configured. The heavy pressure drop of the semiconductor element (7) is V
D, the voltage at the connection point (9) ■9 is v9 = v
□-VD. If V9 is made equal to vTT in FIG. 1, the voltage applied to the resistor module (6) will be equivalent in FIG. 3 and FIG. There isn't.

またZ。=R1でインピーダンス整合する場合、半導体
素子(71の動作抵抗は零であることを仮定しているが
、ECLゲート(1)の信号出力は高速に変化スルので
、その信号に対してはバイパスコンデンサ(8)のイン
ピーダンスは零に近く、シたがって半導体素子(7)と
バイパスコンデンサ(81の並列回路のインピーダンス
は零と見なすことができる。
Z again. = When impedance matching is performed with R1, it is assumed that the operating resistance of the semiconductor element (71) is zero, but since the signal output of the ECL gate (1) changes rapidly, a bypass capacitor is used for that signal. The impedance of (8) is close to zero, so the impedance of the parallel circuit of the semiconductor element (7) and the bypass capacitor (81) can be considered to be zero.

以上のようにこの発明によれば、装置の電源を増加する
ことなく、かつ抵抗モジュールのピン数を増加すること
なく、従って高密度の実装が可能な抵抗モジュールを得
ることかできる。
As described above, according to the present invention, it is possible to obtain a resistance module that can be mounted at high density without increasing the power supply of the device and without increasing the number of pins of the resistance module.

【図面の簡単な説明】[Brief explanation of the drawing]

2・1図は従来の方法の一例を示す接続図、第2図は従
来の方法の他の例を示す接続図、第3図はこの発明の一
実施例を示す接続図である。 (1)・・・ECL、12+・・・ICパッケージ、(
41・・・信号線路、(6)・・・抵抗モジュール、(
7)・・・半導体素子。 なお、図中同一符号は同−又は相当部分を示す。 代理人  葛 野 信 − 12 第1図 第2図 ■εE 第3図 ↓ EE 121
2.1 is a connection diagram showing an example of a conventional method, FIG. 2 is a connection diagram showing another example of the conventional method, and FIG. 3 is a connection diagram showing an embodiment of the present invention. (1)...ECL, 12+...IC package, (
41...Signal line, (6)...Resistance module, (
7)...Semiconductor element. Note that the same reference numerals in the figures indicate the same or equivalent parts. Agent Shin Kuzuno - 12 Figure 1 Figure 2 ■εE Figure 3 ↓ EE 121

Claims (1)

【特許請求の範囲】[Claims] 複数の抵抗素子の一方の端子が共通に接続されている抵
抗モジュールにおいて、その共通に接続された端子と、
これに接続される外部端子との間に直列に半導体素子を
接続したことを特徴とする抵抗モジュール。
In a resistance module in which one terminal of a plurality of resistance elements is commonly connected, the commonly connected terminal and
A resistor module characterized in that a semiconductor element is connected in series between the resistor module and an external terminal connected to the resistor module.
JP23166782A 1982-12-23 1982-12-23 Resistor module Pending JPS59117323A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23166782A JPS59117323A (en) 1982-12-23 1982-12-23 Resistor module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23166782A JPS59117323A (en) 1982-12-23 1982-12-23 Resistor module

Publications (1)

Publication Number Publication Date
JPS59117323A true JPS59117323A (en) 1984-07-06

Family

ID=16927087

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23166782A Pending JPS59117323A (en) 1982-12-23 1982-12-23 Resistor module

Country Status (1)

Country Link
JP (1) JPS59117323A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5729154A (en) * 1993-11-29 1998-03-17 Fujitsu Limited Termination circuits and related output buffers
CN104103392A (en) * 2013-04-10 2014-10-15 珠海扬智电子科技有限公司 Resistor arrangement device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5729154A (en) * 1993-11-29 1998-03-17 Fujitsu Limited Termination circuits and related output buffers
US6160417A (en) * 1993-11-29 2000-12-12 Fujitsu Limited Termination circuits and related output buffers
CN104103392A (en) * 2013-04-10 2014-10-15 珠海扬智电子科技有限公司 Resistor arrangement device

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