JPS59117279A - Semicondutor device - Google Patents

Semicondutor device

Info

Publication number
JPS59117279A
JPS59117279A JP57231571A JP23157182A JPS59117279A JP S59117279 A JPS59117279 A JP S59117279A JP 57231571 A JP57231571 A JP 57231571A JP 23157182 A JP23157182 A JP 23157182A JP S59117279 A JPS59117279 A JP S59117279A
Authority
JP
Japan
Prior art keywords
light
light receiving
laser diode
chip
silicon piece
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57231571A
Other languages
Japanese (ja)
Inventor
Nobuhiko Fujine
藤根　信彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP57231571A priority Critical patent/JPS59117279A/en
Publication of JPS59117279A publication Critical patent/JPS59117279A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02208—Mountings; Housings characterised by the shape of the housings
    • H01S5/02212—Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters

Abstract

PURPOSE:To make it possible to manufacture a semiconductor laser device having a light monitoring light receiving element simply, by mounting a light emitting element chip on a silicon piece, in a part on which a light receiving function is provided. CONSTITUTION:A photodiode or a phototransistor is formed in a part of a silicon piece 15 as a light receiving part, and a laser diode chip 11 is mounted. Of the light rays emitted from the laser diode chip 11, a part of expanse of the light rays, which are outputted backward, is inputted to the light receiving part formed in the silicon piece 15. Therefore, fluctuation in the light output is detected as an electric signal, which can be used as a signal for keeping the light output constant.

Description

【発明の詳細な説明】 本発明は、電気−光変換機能を有する半導体装置の構造
に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to the structure of a semiconductor device having an electrical-to-optical conversion function.

発光素子からの光出力の一部を受光素子で検出し、その
検出出力によって発光素子への電気入力を制御すること
で光出力を一定に維持するといった発光装置がある。あ
るいは、入力電気信号を発光素子によって光信号に変換
し、それを更に受光素子へ伝達し、そこで再び電気信号
として出力するといっｆｃ電気−光一電気変換装置、す
なわちフォトカプラーと呼ばれるものがある。There is a light emitting device that maintains a constant light output by detecting a portion of the light output from a light emitting element with a light receiving element and controlling electrical input to the light emitting element based on the detected output. Alternatively, there is an FC electrical-opto-electrical conversion device, that is, a photocoupler, which converts an input electrical signal into an optical signal by a light emitting element, further transmits it to a light receiving element, and outputs it again as an electrical signal.

以上に示した発光素子と受光素子とを有する半導体装置
の一例として、光モニタ用の受光素子を有する半導体レ
ーザ装置を採り上げて以下説、明する。As an example of a semiconductor device having the above-mentioned light emitting element and light receiving element, a semiconductor laser device having a light receiving element for light monitoring will be taken up and explained below.

第１図に従来例を示す。半導体レーザ１０と受光素子２
０とが光軸を合わせて組み立てられている。半導体レー
ザは、レーザダイオードテップ１１がヒートシンク１２
を介してステム１３に搭載され、さらにキャップ１４で
封じられたものである。レーザダイオードチップ１１か
らの光は、図に矢印で示す二方向に放射され、一方は光
出力として外部に取り出される。もう一方は受光素子２
０のチップ２１へと伝達されて光出力の変動が電気信号
として検出される。ここで、半導体レーザのキャップ１
４および受光素子のキャップ２２の頂部が、いずれもカ
ラス等の光の透明体でできていることは当然である。FIG. 1 shows a conventional example. Semiconductor laser 10 and light receiving element 2
0 are assembled with their optical axes aligned. In the semiconductor laser, the laser diode tip 11 is a heat sink 12.
It is mounted on a stem 13 via a cap 14, and further sealed with a cap 14. Light from the laser diode chip 11 is emitted in two directions indicated by arrows in the figure, and one is taken out as optical output. The other side is light receiving element 2
0 chip 21, and fluctuations in optical output are detected as electrical signals. Here, the semiconductor laser cap 1
4 and the top of the cap 22 of the light-receiving element are both made of a light-transparent material such as crow.

ところでヒートシンク１２は、レーザダイオードチップ
１１で発生する熱をステム１３へと確実に逃がすために
熱の良導体であると同時に、チップに比して一般に熱膨
張係数の格段に大きな金属でできているステムから、チ
ップが受けるストレスを転減するために、チップと近似
の熱膨張係数を持つものであることが望ましい。そのよ
うな材料としてダイヤモンド−ベリリヤ（ｅ化ペリリュ
ム）シリコン等が使われている。一方、受光素子のチッ
プの材質としてしばしばシリコンが使用される。By the way, the heat sink 12 is a good conductor of heat in order to reliably release the heat generated by the laser diode chip 11 to the stem 13, and at the same time, the heat sink 12 is a stem made of a metal that generally has a much larger coefficient of thermal expansion than the chip. Therefore, in order to reduce the stress that the chip receives, it is desirable that the material has a coefficient of thermal expansion similar to that of the chip. Diamond-beryllium silicon and the like are used as such materials. On the other hand, silicon is often used as the material for the chip of the light receiving element.

本発明は、シリコンがヒートシンクとしても受光素子と
しても利用できることに漸目し、その両者を一体とした
構造を提供するものである。The present invention recognizes that silicon can be used both as a heat sink and as a light receiving element, and provides a structure that integrates both.

幀２図に本発明の実施例を示す。ここでシリコン片１５
の一部に受光部としてフォトダイオードあるいはフォト
トランジスタを形成し、レーザダイオードチップ１１を
搭載する所には何ら能動素子を形成していない。レーザ
ダイオードチップから放射された光の中後方へ出たもの
は、その拡がりから一部がシリコン片１５上に形成した
受光部に入射する。したがって光出力の変動が′動、気
信号として検出され、それを光出力を一定に維持するた
めの信号として使用することができる。Figure 2 shows an embodiment of the present invention. Here 15 pieces of silicone
A photodiode or a phototransistor is formed as a light receiving section in a part of the laser diode chip 11, and no active element is formed in the area where the laser diode chip 11 is mounted. Part of the light emitted from the laser diode chip that exits toward the rear expands and enters the light receiving section formed on the silicon piece 15. Therefore, fluctuations in the light output are detected as a dynamic signal, which can be used as a signal to maintain the light output constant.

以上に説明したように本発明によれば、光モニタ用の受
光素子を有する半導体レーザ装置が簡便に製造できる。As described above, according to the present invention, a semiconductor laser device having a light receiving element for light monitoring can be easily manufactured.

また、本発明は、発光素子として発光ダイオードであっ
てもよく、あるいは発光ダイオードと第２図の１５に示
したようなシリコン片との組み合わせでフォトカプラー
としたものであってもよいことは明らかである。Furthermore, it is clear that in the present invention, a light emitting diode may be used as a light emitting element, or a photocoupler may be formed by combining a light emitting diode and a piece of silicon as shown in 15 in FIG. It is.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は、光モニタ用の受光素子を有する半導体レーザ
装置の従来例を示す断面図であシ、第２図は同様装置の
本発明を適用した一例を示す断面図である。FIG. 1 is a sectional view showing a conventional example of a semiconductor laser device having a light-receiving element for light monitoring, and FIG. 2 is a sectional view showing an example of the same device to which the present invention is applied.

Claims (1)

【特許請求の範囲】[Claims] 一部に受光機能を持たせたシリコン片上に、発光素子の
チップを搭載したことを特徴とする電気−光変換半導体
装置。An electro-optical conversion semiconductor device characterized in that a light-emitting element chip is mounted on a piece of silicon that partially has a light-receiving function.
JP57231571A 1982-12-24 1982-12-24 Semicondutor device Pending JPS59117279A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57231571A JPS59117279A (en) 1982-12-24 1982-12-24 Semicondutor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57231571A JPS59117279A (en) 1982-12-24 1982-12-24 Semicondutor device

Publications (1)

Publication Number Publication Date
JPS59117279A true JPS59117279A (en) 1984-07-06

Family

ID=16925596

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57231571A Pending JPS59117279A (en) 1982-12-24 1982-12-24 Semicondutor device

Country Status (1)

Country Link
JP (1) JPS59117279A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0245712A2 (en) * 1986-05-01 1987-11-19 Wai-Hon Lee Semiconductor laser and detector device
US4811350A (en) * 1986-08-05 1989-03-07 Sharp Kabushiki Kaisha Semiconductor laser apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0245712A2 (en) * 1986-05-01 1987-11-19 Wai-Hon Lee Semiconductor laser and detector device
US4811350A (en) * 1986-08-05 1989-03-07 Sharp Kabushiki Kaisha Semiconductor laser apparatus

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