JPS59112622A - Plasma treating device - Google Patents

Abstract

PURPOSE:To eliminate the adverse influence to the result of plasma treatment by inserting a substance having dehydrating function into the midway of treating gas supplying means. CONSTITUTION:An Si wafer 15 is conveyed from a vacuum chamber coupled to a vacuum vessel 8, and placed on a substrate electrode 12. Thereafter, the vessel 8 is evacuated in high vacuum by vacuum evacuating means connected to a vacuum exhaust port 9. Then, treating gas is passed through a substance 16 having dehydrating function provided in a conduit, moisture is removed, flowed into the vessel 8, and maintained to the prescribed pressure. Then, high frequency power is supplied to the electrode 12 from a high frequency power source 14, thereby producing plasma discharge due to the treating gas, and reactive products are gasified and exhausted from the port 9. The substance 16 is thus inserted into the midway of the treating gas supplying means, thereby removing the moisture contained in the gas. Accordingly, the moisture does not affect the adverse influence to the product.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a plasma processing apparatus for dry etching thin sheets and materials using the tM phenomenon.

Conventional Example (14 Structure and Its Problems) A conventional plasma processing apparatus, as shown in FIG. A high frequency power source 6 is connected to either one of the substrate electrode 4 and the counter electrode 5.
The object to be etched 7 was engulfed above it. However, in the above configuration, the processing gas directly flows into the vacuum vessel 1 from the processing gas supply conduit 3 and is subjected to plasma processing, so that the moisture contained in the processing gas and the moisture adsorbed in the middle of the processing gas supply conduit are This has a negative effect on the discharge treatment results, and in AQ film etching (the waiting time until the start of d1 etching becomes longer and the etching is completed after etching is completed).
+ It had the disadvantage that the film was corroded.

OBJECTS OF THE INVENTION In view of the above-mentioned drawbacks, the present invention provides a plasma processing apparatus that removes moisture from processing gas before it flows into a vacuum container, and does not adversely affect the plasma processing results.

Composition of the invention The present invention relates to a vacuum container, evacuation means, and a substrate electrode.

It consists of a counter electrode, a high-frequency power source, and a processing gas supply means in which a substance with a dehydration function is inserted into a processing gas conduit, and the processing gas is completely absorbed into the processing gas by passing through the substance with a dehydration function. In Aρρ etching, the waiting time until the start of etching is shortened, and the moisture adsorbed on the inner wall of the conduit in the middle of the processing gas supply means is removed, blown out into the vacuum container, and subjected to plasma processing. A substance that has a dehydration function because it exhibits the unique effect of not causing corrosion of the two membranes that are attached after finishing, and can be regenerated by releasing the adsorbed moisture by heating and airing the substance that has a dehydration function. The frequency of opening the inside of the conduit or vacuum container to the atmosphere for replacement can be greatly reduced.

DESCRIPTION OF EMBODIMENTS Hereinafter, a specific embodiment of the present invention will be described with reference to the drawings.

FIG. 2 shows a first embodiment of the present invention, which is a plasma processing apparatus for dry etching an AR film.

In Fig. 2, 8 is a vacuum container ζ for keeping the interior 1 in a vacuum and causing a plasma reaction, 9 is a vacuum bleed port connected to an evacuation means (not shown), and 10 is a processing gas container, for example, for etching an AQ film. In this case, a gas such as CCQ4 can be put in. 11a is a control valve for flowing a predetermined amount of processing gas; 11b is a gas blowing section that is made up of a plurality of small holes or pores and blows out the processing gas in a completely dispersed manner; 12 is a substrate electrode on which the object to be etched is placed; 13 is a gas Together with the substrate electrode 12, the opposing electrodes have a blowing surface and constitute a pair of opposing flat plate electrodes. 14 is a high frequency power supply, for example 13.5
6[i of power is supplied to either the substrate electrode 12 or the counter electrode 13. Reference numeral 15 indicates an object to be etched, such as a silicon wafer for semiconductors, and 16 indicates a substance having a dehydrating function, such as activated alumina or 7 Rikakel. Note that the processing gas supply means is the processing gas container 10. It consists of a flow rate control valve 11a, a gas blowing surface 11b, a conduit connecting them, and an inserted substance 16 having a dehydration function.

The operation of the plasma processing apparatus for dry etching the 7CA ρ film constructed as described above will be described below. First, the silicon sea urchin 15 is carried in from a vacuum chamber (not shown) connected to the vacuum container and placed on the substrate electrode. Thereafter, the inside of the vacuum container 8 is evacuated to a high level of 10-5 Torr by the vacuum evacuation means connected to the vacuum exhaust port 9, and then the process gas is pumped through the flow rate control knob 11a.
The water is removed by passing through a substance with a dehydration function provided in the conduit, and the water is removed in a vacuum container 8 ((flowed and kept at a predetermined degree of vacuum. Next, high frequency power source 14 is used to increase the degree of vacuum). By supplying the gas to the electrode 12, a plasma discharge is caused by the processing gas, which reacts with the AQ film to be removed on the Noricon wafer 16, and the reaction product is gasified and exhausted from the vacuum exhaust port 9.

As described in 2 below, according to this embodiment, by inserting a substance having a dehydrating function in the middle of the processing gas supply means, the water contained in the processing gas and the 7ζ water adsorbed in the middle of the processing gas supply means can be removed. Therefore, more AQ203 (aluminum oxide) than shown in Equation 1 is not formed at the initial stage of etching, and the AQ film to be removed on the silicon wafer 15 starts etching immediately. We were able to eliminate that waiting time. Furthermore, after etching is completed, hydrochloric acid is not generated due to the reaction between the chlorine adsorbed on the resist and underlying substrate on 7-Recon Ueno・15 and the moisture, so 7- is left unremoved.
, corrosion of the AR film can be prevented.

A second embodiment of the present invention will be described below with reference to the drawings. FIG. 3 shows a plasma processing apparatus for dry etching an Aρ film showing a second embodiment of the present invention.

In Fig. 3, 8 is a vacuum container, 9 is a vacuum exhaust port, and 10 is a vacuum container.
is a processing gas container, 11a is a flow rate control valve, 1
1b is a gas blowing surface, 12 is a substrate electrode, 13d is a counter electrode, 14 is a high frequency power source, 16 is a silicon wafer, and 16 is a material having a dehydration function, which is the same as the structure shown in FIG. 2. . The difference from the configuration shown in Figure 2 is the vacuum container 8.
The point is that an electric heater 17 and an electric heater 18 for heating the substance 16 having a dehydrating function are provided around the periphery.

The operation of the plasma processing apparatus for AQ film dry etching constructed as described above will be explained below.

While the inside of the vacuum container 8 is evacuated to a high level by the vacuum degassing means connected to the vacuum exhaust port 9, the vacuum container 8 and the substance having a dehydration function are heated together by the electric heaters 17 and 18, and the substance having a dehydration function is adsorbed by the heated exhaust. release the moisture present. After that, the electric heater 17.18 is stopped and after cooling, all 10 inside the vacuum container 8 are heated.
The vacuum is evacuated to a level higher than Torr, and the Al1 film to be removed on the silicon wafer is removed in the same manner as in the first embodiment.

As described above, according to this embodiment, by providing a temperature control means that heats a substance having a dehydration function provided in the middle of the processing gas supply means, it is possible to release the absorbed moisture in the apparatus. Since it can be regenerated in its original size, there is no need to open the inside of the vacuum container or gas supply means to the atmosphere to replace the substance with dehydration function, and there is no need to adsorb water vapor in the atmosphere.

In addition, the substance 16 having a dehydration function in the first embodiment and the second embodiment may be inserted on the outlet side of the flow control valve 11a, and 7ζ may be placed on the inlet side of the flow control valve 11a, or it may be held on both sides. good. It goes without saying that although a substance having a dehydrating function is inserted, other substances such as catalysts may be inserted depending on the purpose.

Effects of the Invention As described above, the present invention shortens the waiting time until the start of etching in, for example, AQ and film dry etching by inserting a substance having a dehydrating function in the middle of the processing gas supply means in an electric discharge processing apparatus. Moreover, it is possible to prevent corrosion of the AC film after etching, and the moisture adsorbed to the substance with a dehydration function can be easily regenerated by initial heating using a temperature control means, and its practical effects are outstanding. There is.

[Brief explanation of drawings]

FIG. 1 is a schematic diagram of a conventional plasma processing apparatus B, FIG. 2 is a schematic diagram of a plasma processing apparatus according to a first embodiment of the present invention, and FIG. 3 is a schematic diagram of a plasma processing apparatus according to a second embodiment of the present invention. FIG. 8... Vacuum container, 9... Direct air opening,
10... Processing gas container, 11a... Diversion control knob, 11b... Gas blowing surface, 1
2...Substrate electrode, 13...Counter electrode, 1
4... High frequency power supply, 15... Silicon wafer, 16... Substance with dehydration function, 17
．． 18...Electric heater. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
figure

Claims (2)

[Claims] (1) A vacuum container, a vacuum evacuation means connected to the vacuum container, a pair of opposing flat plate electric devices provided in the vacuum container, and a high-frequency generator electrically connected to either one of the electrodes. A plasma processing apparatus comprising a power source and a processing gas supply means in which a substance having a dehydration function is inserted into a processing gas conduit led to the vacuum container. (2) The plasma processing apparatus according to claim 1, further comprising means for heating the substance having a dehydration function.