JPS59112482A - Magnetic bubble memory element - Google Patents

Abstract

PURPOSE:To eliminate an error between adjacent minor loops and to improve reliability by placing a flat chevron-shaped pattern in the vicinity of a true swap gate conductor, at a position opposed to the respective C-shaped corner patterns on the minor loop. CONSTITUTION:A cache loop 110 is constituted of a C-shaped corner pattern 111, a line 112, a merge point 113 and a line 114, a storage loop 120 is constituted of a C-shaped corner pattern 121, a line 122, a merge point 123 and a line 124, and a true swap gate 230 is constituted by placing a gate conductor 231 between the cache loop 110 and the storage loop 120. Flat chevron patterns 216, 226 are placed in the vicinity opposed to the C-shaped corner pattern of the gate conductor 231, therefore, a leakage magnetic field by a flat pattern is localized, and influence exerted on the adjacent C-shaped corner pattern can be reduced remarkably.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a magnetic bubble memory device, and particularly to a magnetic bubble memory device that is expected to serve as a highly reliable and high-performance solid-state memory in the information processing field.

Conventional magnetic bubble memory elements of this type include those using so-called on-chip cache type major line/minor lube configuration chips that do not deteriorate in performance especially when the capacity is increased; for example, the one published in November 1981, IE Transactions on
Magnetics (lli:E[i: Transac
tions on Magnetics).

It is described in Volume 17, No. 6, pages 3038 to 3040.

In such a magnetic bubble memory element, a true swap gate is used between the two large and small minor lubes.
Two pairs of C-type 180 facing this true swap gate
Because the engraved corner patterns are placed close to each other, the driving force for gate operation is reduced, a large rotating magnetic field is required, and jump errors to adjacent loops are likely to occur.
This has become a major problem and reduces reliability.

The first object of the invention is to obviate the aforementioned drawbacks.

An object of the present invention is to provide a highly reliable and improved magnetic bubble memory device free from errors between adjacent minor lubes.

A second object of the present invention is to provide a high-performance, large-capacity magnetic bubble memory device that operates with a small rotating magnetic field.

The present invention provides a magnetic bubble memory element having a chip configuration in which a minor loop divided into at least two parts is connected by a true swap gate conductor.
The magnetic bubble memory device is characterized in that a flat chevron-shaped pattern is disposed close to the true swap gate conductor.

According to the present invention, by driving a single current pulse to the true swap gate conductor between adjacent minor loops, -
By merging the magnetic bubble data on the C-shaped 180° corner batten on the 10,000th minor loop with the other minor loop through the flat chevron pattern placed opposite thereto, data between adjacent minor loops can be easily exchanged.

The present invention will be described in detail below using one drawing.

FIG. 1 is a plan view showing a conventional on-chip cache magnetic bubble memory device, particularly a true swap gate between a cache loop and a storage loop. This memory element includes a permalloy pattern 111,
Line 112, il merge point 113, and line 11
4 constitutes a cash loop 110, and juxtaposed with this, a permalloy pattern 121, a line 122, a second merge point 123, and a line 124 constitute a storage loop 12.
0 is configured. The Cathy loop 110 is a short minor loop, and the storage loop 120 is a long minor loop having a length that is an integral multiple of the Cathy loop 110. The true swap gate 130 connecting between the cash loop 110 and the storage loop 120 has a gate conductor 131° permalloy pattern 1] ], 1
A true-swap gate conductor consisting of 25,126 and gate conductors 131. permalloy pattern 1
21,115° 116, and only when the gate conductor 131 is energized with a current pulse along with the rotating magnetic field 160.
The bubble data that was in the cash loop 110 is transferred to the first merge point 123 on the storage loop 120, with the diameter of the merge line 127 between the true swap gate in part and the [first] merge line 127.
At the same time, the bubble data that was in the storage loop 120 is merged into the true swap gate out section and the second
The merge line 1]7 joins the second merge point 113 on the cash loop 110, and the merge line 1
Bubble data is exchanged between the storage loop 120 and the storage loop 120. Permalloy patterns 111 and 121 are C-shaped corner patterns that are folded back in the forward direction, respectively.
Called 0° corners, the same C-shaped pattern is also used in the gate configuration permalloy pattern 126 and 116 opposite to these corner patterns. If they are placed close to each other, the leakage magnetic field generated from the adjacent C-shaped patterns tends to cause bubbles to expand between the C-shaped patterns in the same row, causing transfer errors to the adjacent loops. In order to reduce the driving force of the bubble between the C-shaped patterns, a large rotating magnetic field is required5- (and it has been found that errors in bubble jumping between the entrances and exits of the C-shaped corner pattern may occur). The cause of this is that the C-shaped corner patterns 111 and 12
This is because patterns of the same size are placed side by side in 1, and the unnecessary leakage magnetic field is too strong.

Therefore, in the embodiment of the present invention shown below, transfer errors between adjacent loops are removed by changing the shape of the gate configuration pattern around the pair of C-shaped corner patterns that configure the true swap gate, and This increases the driving force of the shaped corner pattern and enables operation in low rotating magnetic fields.

FIG. 2 (5) is a top plan view of the vicinity of the true swap gate of the magnetic bubble memory device according to the embodiment of the present invention;
Figure (B) is a characteristic diagram showing the bias margin.

In these figures, one embodiment shows the cash loop 110.
is the C-shaped corner pattern 111, the line 112, and the second
The storage loop 120 is composed of a merge point 113 and a line 114, and a 6-C corner pattern 121 and a line 122.

It consists of a first merge point 123 and a line 124. In addition, cash loop 110 and storage loop 1
Between C-shaped corner pattern 111 and pattern 225 and 226, the true swap gate-in part is connected to C-shaped corner pattern 1.
21 and patterns 215 and 216 form a true swap gate out portion, and these two together constitute a true swap gate 230. Flat chevron pattern 2
16° 226 passes through the second merge line 127 and the first merge line 117, respectively, and reaches the second merge point 1.
23 and the first merge point 113, the storage loop 12
0 rotation magnetic field 160 that merges with 0 and cash loop ll0K
At the same time, if a pulse current is supplied to the gate conductor 231, the bubble data in the cash loop 110 is transferred to the storage loop 120 via the true swap gate-in portion, and the bubble data in the storage loop 120 is transferred to the true swap gate-out portion. The data is then transferred to the cash loop 110 for data exchange.

The difference between this embodiment and the case shown in FIG. , 225 are also partially changed. In this way, by placing a small flat chevron pattern opposite the C-shape, the leakage magnetic field due to the flat pattern is localized, and the influence on the adjacent C-shape corner pattern can be significantly reduced, eliminating the conventional problem. We were able to eliminate the transfer error caused by the expansion of bubbles between minor loops in the same row.

Furthermore, as shown in Figure 2 (Bl), the margin characteristics of the C-shaped corner, which conventionally required a narrow and large rotating magnetic field (i.e., high driving magnetic field) as shown by curve 251,
In this example, as shown by curve 250.

The margin has been expanded, and it has become possible to move with a small rotating magnetic field (ie, a low driving magnetic field). In this way, being able to move with a low driving magnetic field means that the driving power can be reduced, which is extremely useful in practice.

As explained above, according to one aspect of the present invention, in the true swap gate disposed between the cash loop and the storage loop, a flat chevron pattern is placed opposite to the C-shaped corner pattern on the cash loop and the storage loop. Therefore, the problem of errors between adjacent minor loops, which was a drawback of conventional magnetic bubble memory devices, can be eliminated, and a highly reliable magnetic bubble memory device can be provided. Furthermore, these improvements are extremely effective in realizing an on-chip cache type chip configuration, and also make it possible to reduce power consumption.

Note that the shape of the true swap gate shown in this embodiment is merely an example, and any other shape may be used.

[Brief explanation of drawings]

FIG. 1 is a plan view showing a conventional magnetic bubble memory IJX element, FIG. 2 (5) is a plan view showing a magnetic bubble memory element according to an embodiment of the present invention, and FIG. It is a characteristic diagram of a magnetic bubble memory element of 110... cash loop in the composition.
111゜121・・・Permalloy pattern, 11
2,114,122゜124... line, 11
3,123...Merge point% 120゜...
Storage roof', 130, 230... True swap gate, 131, 231... Gate conductor constituting the true swap gate, 125, 126, 22
5,226... Permalloy pattern constituting the in part of the true swap gate, 121,115. [
6,215°216... Permalloy pattern forming the out part of the true swap gate, 113,
127... Line, 160... Rotating magnetic field, 250, 251... Margin curve. 10- Beef 2 songs (8) -462-

Claims (1)

[Claims] In a magnetic bubble memory device having a chip configuration in which a minor loop divided into at least two parts is connected by a true swap gate conductor, each g on the minor loop is
Lf) A magnetic bubble memory element characterized in that a flat chevron-shaped turn is disposed close to the true swap gate conductor at a position opposite to the c-shaped corner pattern.