JPS5911033A - Semiconductor integrated circuit - Google Patents

Abstract

PURPOSE:To make setting of a signal level inputted to an I<2>L circuit easy and to extend the input amplitude of the I<2>L circuit, by using an MOSFET as an input interface in the I<2>L circuit receiving a signal from a linear circuit. CONSTITUTION:An injector current I0 is supplied to lateral pnp transistors (TRs) Q11-Q1n from a constant current source. Further, the base of the TRs Q11- Q1n and the emitter of npn switching TRs Q21-Q2n are connected to an injector terminal of an I<2>L circuit of the lower stage side. A negative power supply line of the lower stage side I<2>L circuit is grounded. MOSFETs Q2, Q2' are used as an input interface of the I<2>L circuit of each stage. Moreover, an output signal from a linear circuit is applied to the gate of the FETs Q2, Q2'. Since the threshold value is set optionally in a broader range in using the MOSFET as the input interface in comparison with a bipolar TR, the level setting of the linear circuit is done easily.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor integrated circuit referred to as an integrated injection logic (2L) circuit.

Conventionally, a twisted 2L gate shown in FIG. 1 has been known. The I2L circuit connects the injector terminal (lateral pnp
It operates by applying a torrent pressure of 0.7 volts to the emitter of transistor QIo and flowing a constant IIL current. In addition, the l2LI structure is a normal bibolae C (integrated circuit)
can be formed using almost the same combination of processes. This makes it difficult to believe that, in principle, a linear IC and a digital IC with a 2L configuration can be configured into a single chip IC using the same process.

In this case, as shown in FIG. 1, the input circuit V-C1 from the linear circuit to the 2L logic uses a forward transistor Q+F. In this way, if it is used for transistor Q+ and (g kjk is input to
It was made into a clear power.

When used in the bipolar transistor Q1, the threshold is 11! regardless of its manufacturing condition trc! The voltage vBE becomes constant, and the output of the linear circuit becomes @XAll as described above.
1! ! The circuit Ni1) must be set according to the LEV, and due to the collector-emitter pressure of the upper VC transistor QI, the remaining vehicle pressure of the low level Sen1 increases. Because I put it away, the width of the Denozuki Tatsu becomes smaller and smaller.

Furthermore, the electric and drag pressures vary from 5 to 1 according to the linear circuit.
Since we will be using a relatively high voltage system with a voltage level of 2 volts, we will operate at a voltage level of 0.7 volts on F2II 1+,!
+Brother from the road! Well, that one electric power! Therefore, the inventors of this book #1 stacked up 12 in series with respect to the circuit drowsiness insertion pressure V to form a so-called stacked configuration. The idea of ``Bon'' is to use it effectively. In this case, the above bipolar transistor Q+
'C used in the meeting is its switching movement s'v vc
Therefore, the injector's control unit is pushed against the linear circuit side of the 2L circuit.

Therefore, for example, if another 2LL circuit is provided on the first stage side of the upper I2L gate, the above transistor Q1)
・When it is on, the % J2 mt2 injector 'Kamesu' flows to the linear circuit 1u11, and the upper stage 1 injector +1+, 61f becomes 7 less [7].
The signal transmission time of the I'L+ circuit on the lower stage side fluctuates, and switching noise occurs on the power supply line.

The purpose of this invention is to make it easier to manually set the bell setting of the 21J circuit from the linear circuit, and to
An enlarged and cut-out diagram of the human force amplitude of the I circuit.
The aim is to provide a semi-2j ◆ corporeal and peripheral circuit.

Another object of the invention is that its switching operation allows
2LIIjl road 1 rule injector current control 71
The object of the present invention is to provide a semiconductor integrated circuit with a 3B1 interface.

Other objects of the invention will become apparent from the following description and drawings.

Note, this explanation r#: I will go to Wangju 1st station 4th morning with the example.

FIG. 2 (1/) is a circuit diagram of an embodiment of the present invention.

In this example, the IJ
The near circuit and the 2L circuit are formed on one semiconductor substrate using known semiconductor integrated circuit manufacturing techniques. The load limiting type 2L circuit has a multi-stage configuration in series with respect to the Kamiso vehicle pressure +V. In other words, the injector terminal of the I2L circuit on the upper stage side,
In other words, the emitters of the lateral transistors Q to Q+n are supplied with injector current 0 from a constant flow source. And this upper row side ・I'L
The negative power supply line of the circuit, that is, the base of the above-mentioned pnp) transistors Q to Q+n, and the terminals of the npn switching transistors QII to Qzn are connected to the same injector terminal (positive connected to the power supply line). This lower side work 2L
The same negative power line in the circuit is grounded.

As a human interface for the 2L circuits in each stage above,
MOEIFET (edge gate type tortoise effect transistor)
Ql and Qx' are used.

In this embodiment, there are no particular restrictions or the upper MQEI
FffiTQt ICh't, Enhancement 5n
It is composed of channel MO8FFiT.

An output signal from the linear circuit is applied to the gates of MO8FETQ, 2 + Q2', and the gates thereof are connected to the negative power supply line of the circuit 2L circuit of each stage. And the above MO8FETQt.

The drain output of Ql is the input crab 2L in the corresponding stage.
Gate switching transistor QR.

Each is conveyed to the pace of Q21'.

As in this example, the 10 o'clock 91-H from the linear circuit
MO as an input interface in the 2L circuit
When using 8FETQz,Qt', compared to when using bipolar transistor sound, the threshold voltage t can be arbitrarily set in a wider range than 7, making it easier to set the level in the output circuit of the linear circuit. Become. therefore,
For example, if you use the 11th upper threshold, you can expand the noise margin.

However, since the MOSFET is driven by voltage and performs a surface speed switching operation, the output circuit of the linear circuit can use a transistor with a small capacity (ttM). Therefore, the chip size of the output circuit in the linear circuit can be reduced and power consumption can be reduced.

Furthermore, since the remaining 'PIL pressure between the drain and source of MOSFET Q2 and Q2' is small, the distance between the 1g and 1g, which can be said to be 2b, becomes larger.

Further, in an I'L circuit below it, such as an upper I''L circuit, which has a kW capacity, the injector current basin in the lower I''L circuit is not changed by switching operation at the manual interface. Ding, MO
Work 2Ll from the gate of 8FETQz! No current is supplied to the J path, and MO8FKTQ! Regardless of whether it is on or off, all of the current from the Q-th pnp transistor ωL flows to its negative power supply line side. Therefore, the injector current supplied to the upper 2L circuit is 0, or the injector current of the lower 2LL circuit is tAf, 0
Since it will be used as it is as it is, switching noise will theoretically occur in the main line of the I"L circuit.
F J'+ T Q 2 (Q 2'
) K semiconductor i! A layout diagram of an example of a case where the circuit is configured as a h circuit is shown.

In this embodiment, p-1-type region 1. n-type region 2°p
VC1 to form MO8FJiiTQ, 2i in the known L range consisting of type 3 rubi n type region 4
The semiconductor regions 5 and 10 and the pole 6 can be added.

By combining this technical element structure, the size of MOS FAT for human interface can be reduced.
There is an advantage that the wiring with the I2L gate is not unnecessary, and isolation is also unnecessary.

Note that since the conductivity type of the MOSFET is n-channel, its channel region (p
- If you want to turn off/on the mold region by using a stopper, just attach the enhancement mold to this MO8FJflTQ*.

In this way, MO8FKTi for human interface,
By combining J, N channel/P channel, enhancement type/depression type, the transformation form of the gods can be taken.

This invention is based on the technique of the above-mentioned embodiment! The L circuit does not need to have a multi-stage configuration. That is, even in a one-stage 2L circuit, as explained in the above embodiment, by using MO8FET as the input interface, it is easy to set the output width of the linear circuit, and 1. : This is because the effect of increasing the V-size imaging width is affected.

[Brief explanation of drawings]

Figure m1 shows an example of a known engineering circuit and its human interface. Figure 2 is a circuit diagram of an embodiment of the present invention.
<IE3 Figure F-j:x This is a layout diagram of one embodiment. ■...p-type region, 2...11-type region, 3...
p-type region, ↓...n-type region, 5...p-type region, 6
...Gate electrode. Agent ``Buy soil removal 1) Ori selection

Claims (1)

[Claims] 1. A semiconductor integrated circuit characterized by a linear circuit, a MOSFET that receives a signal from the linear circuit at its gate, and a circuit that receives the drain output of this M08FFtT. . 2. The I2L circuit has a multi-stage configuration with respect to the source pressure, and the MO8FFiT is formed in the same element formation area as the I2L circuit of the corresponding stage. 3. The drain of the MOEIFET is shared with the base region of the switching transistor in the gate 2L that receives the drain output.Characteristics A semiconductor integrated circuit according to claim 2 of the claim.