JPS5910959B2 - 三制御量により一定直径に制御する半導体材料の無るつぼ帯溶融方法 - Google Patents

三制御量により一定直径に制御する半導体材料の無るつぼ帯溶融方法

Info

Publication number
JPS5910959B2
JPS5910959B2 JP48034435A JP3443573A JPS5910959B2 JP S5910959 B2 JPS5910959 B2 JP S5910959B2 JP 48034435 A JP48034435 A JP 48034435A JP 3443573 A JP3443573 A JP 3443573A JP S5910959 B2 JPS5910959 B2 JP S5910959B2
Authority
JP
Japan
Prior art keywords
control
frequency
oscillator
zone
melting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP48034435A
Other languages
English (en)
Japanese (ja)
Other versions
JPS4922384A (xx
Inventor
ケラ− ウオルフガング
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of JPS4922384A publication Critical patent/JPS4922384A/ja
Publication of JPS5910959B2 publication Critical patent/JPS5910959B2/ja
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Induction Heating (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP48034435A 1972-04-26 1973-03-26 三制御量により一定直径に制御する半導体材料の無るつぼ帯溶融方法 Expired JPS5910959B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE2220519 1972-04-26
DE2220519A DE2220519C3 (de) 1972-04-26 1972-04-26 Verfahren zum tiegelfreien Zonenschmelzen von Halbleiterstäben

Publications (2)

Publication Number Publication Date
JPS4922384A JPS4922384A (xx) 1974-02-27
JPS5910959B2 true JPS5910959B2 (ja) 1984-03-12

Family

ID=5843357

Family Applications (1)

Application Number Title Priority Date Filing Date
JP48034435A Expired JPS5910959B2 (ja) 1972-04-26 1973-03-26 三制御量により一定直径に制御する半導体材料の無るつぼ帯溶融方法

Country Status (6)

Country Link
US (1) US3880599A (xx)
JP (1) JPS5910959B2 (xx)
BE (1) BE798760A (xx)
DE (1) DE2220519C3 (xx)
DK (1) DK142062C (xx)
NL (1) NL7216255A (xx)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4176002A (en) * 1974-08-21 1979-11-27 Agence Nationale De Valorisation De La Recherche (Anvar) Controlling the melt temperature during zone refining and Czochralski crystal growth by sensing the viscous torque of the melt zone during operation
DK142586B (da) * 1977-07-07 1980-11-24 Topsil As Apparat til zonesmeltning af en halvlederstav.
JPS58831B2 (ja) * 1978-09-27 1983-01-08 東洋製罐株式会社 高周波誘導加熱回路

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL252591A (xx) * 1959-08-17
GB904100A (en) * 1959-09-11 1962-08-22 Siemens Ag A process for zone-by-zone melting of a rod of semi-conductor material using an induction coil as the heating means and an automatic arrangement for controlling the current through the coil
DE1209551B (de) * 1961-12-07 1966-01-27 Siemens Ag Verfahren zum tiegelfreien Zonenschmelzen eines stabfoermigen Halbleiterkoerpers miteiner Steuerung seines Durchmessers- bzw. Querschnittsverlaufs und Vorrichtung zur Durchfuehrung dieses Verfahrens
US3284172A (en) * 1964-10-13 1966-11-08 Monsanto Co Apparatus and process for preparing semiconductor rods
US3321299A (en) * 1964-10-13 1967-05-23 Monsanto Co Apparatus and process for preparing semiconductor rods
US3617392A (en) * 1968-10-29 1971-11-02 Semimetals Inc Power control for crystal growing
DE1913881B2 (de) * 1969-03-19 1970-10-22 Siemens Ag Vorrichtung zum tiegelfreien Zonenschmelzen

Also Published As

Publication number Publication date
NL7216255A (xx) 1973-10-30
JPS4922384A (xx) 1974-02-27
DK142062B (da) 1980-08-18
DK142062C (da) 1981-01-12
DE2220519A1 (de) 1973-11-15
DE2220519C3 (de) 1982-03-11
DE2220519B2 (de) 1981-02-26
US3880599A (en) 1975-04-29
BE798760A (fr) 1973-10-26

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