JPS59108253A - Ion implanting device - Google Patents

Abstract

PURPOSE:To obtain an easy-to-use ion implanting device by making a plurality of slits through a mass separation slit board then directing the ion beam toward desired ion implanting chamber by means of a beam deflecting function of mass separator and a plurality of slits thereby eliminating beam deflecting magnet. CONSTITUTION:A plurality of slits 8', 8'' are made through a mass separation slit board 8. Mass separated ion beam 3 is directed to pass through desired slit 8'' or 8' through regulation of magnet exciting current of a mass separator 2. In other word, deflecting function similar to the beam deflecting magnet is provided to the mass separator 2. Ion beam 3 passed through each slit will reach to each rotary disc 6, 6'. Ion beam under implantation is standstill while sweeping function is realized by moving the rotary discs 6, 6' mechanically against the beam. Consequently the discs 6, 6' under implantation will move radially in arrow direction with correspondence to rotation resulting in uniform ion implantation into a wafer.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention mainly relates to an ion implantation apparatus used for manufacturing semiconductor devices.

[Background of the invention]

In an ion implantation apparatus, the number of wafers that can be implanted per unit time depends mainly on the beam current, the wafer exchange time, the accompanying evacuation time of the implantation chamber, and the like. Particularly when the implantation amount is small, the number of wafers processed is limited by the wafer exchange time and evacuation time, so it is required to shorten these times as much as possible. Recently, in order to increase the wafer processing capacity, high-current implantation equipment is equipped with two implantation chambers, and while one implantation is being performed, the other implantation chamber is loaded with wafers and evacuated. It is being used. Hereinafter, typical configuration examples thereof will be explained using the drawings.

Figure 1 shows the main structure of an ion implantation device equipped with two implantation chambers, with (a) being a plan view and (b) being a plan view.
is a front view. In order to simplify the drawings, the structure of the driving chamber and the like that are not directly related to the present invention, which will be described later, are omitted from the drawings.

In FIG. 1, 1 is an ion source and 2 is a mass separator. The ion beam filter emitted from the ion source 1 contains various ion species, so in order to separate the ions necessary for implantation, a mass separator 2 (2', 2 indicates the magnetic pole) using a magnetic field is used. ) is used.

The mass separated ion beam 6 passes through the mass separation slit plate 4
The beam passes through the slit, passes between the magnetic poles 5 and 50 of the beam deflection magnet 5, and reaches the rotating disk B in the driving chamber. The ion beam 6 is deflected by the deflection magnets (in the direction perpendicular to the plane of the paper in FIG. 29, and in the horizontal direction in FIG. 29 (1)). That is, (1)) As shown in the figure, the ion beam 6 is directed so as to irradiate a predetermined position on either one of the rotating disks 6.6', and the wafer mounted on the disk 6.6 is 7. Perform ion implantation. In order to achieve uniform implantation, the ion beam 6 must be swept in the radial direction with respect to the respective centers 00' of the rotating disks 6, 6', and this beam sweeping is also effected by the deflection magnets 5. While the driving process is being carried out on one of the rotary disks, for example B, the other rotating disk 6' is equipped with a woofer, preliminary exhaust, etc., in preparation for the next driving process. Once the driving process for rotary tomoe disk B is completed, it is time to start driving for rotary disk 6'. By performing implantation alternately in this manner, time loss due to wafer mounting, evacuation, etc. can be virtually eliminated, making it possible to increase the number of wafers processed.

However, in the conventional technology as described above, the beam deflection magnet 5 has both beam deflection and beam sweeping functions, so the deflection magnet 5 has to perform highly accurate beam deflection and sweep control in order to achieve uniform implantation. was demanding.

[Purpose of the invention]

An object of the present invention is to solve the above problems and provide an ion implantation device that is easy to handle.

[Summary of the invention]

In order to achieve the above object, the apparatus of the present invention is configured such that the beam deflection magnet is omitted and the beam deflection function is carried out by the mass separator, and the sweep function is carried out by the disk.

[Embodiments of the invention]

Hereinafter, the present invention will be explained in detail with reference to Examples.

FIG. 2 is a block diagram of the main parts of the ion implantation apparatus of the present invention. In the figures, the same reference numerals as those mentioned above indicate the same or equivalent parts, and the explanation will be omitted as appropriate. 8 is a mass separation slit plate, which has a plurality of slits IJ 7 +-8', 8
The mass-separated ion beam 3 is
A desired slit 8 is created by adjusting the magnet excitation current of the mass separator 2.
“Or oriented to pass through 8′, i.e.
The mass separator 2 is provided with a deflection function equivalent to that of a beano deflection magnet. The ion beam 6 after passing through each of the slits reaches each rotating disk 6.6'. The ion beam 6 during implantation is stationary, and the sweep function is performed by the rotating disk 66.
This is achieved by mechanically moving ′ with respect to the beam. Therefore, the disk 6.6 during the driving operation moves in the radial direction of the disk as it rotates, as shown by the arrow in FIG.
Uniform ion implantation can be performed on the wafer.

FIG. 5 is an explanatory diagram of the mass separation slit plate 8. When using the rotating disk A shown in Figure 2, use the slit 8.
When using the rotating disk 6, connect the slit 8 to the ion beam 3.
Let it pass.

〔Effect of the invention〕

As explained above, in the ion implantation device of the present invention, by providing a plurality of slits in the mass separation slit plate, a beam deflection magnet is not required, which not only simplifies the device, but also allows for easy deflection and sweeping of the ion beam. Since the controls can be performed separately, adjustments can be made easily and uniform ion implantation can be easily achieved.

In the detailed description of the present invention, the case where there are two slotting chambers has been explained, but it goes without saying that the number of slotting chambers can be increased by increasing the number of slits as necessary.

[Brief explanation of drawings]

FIG. 1 shows the main structure of a conventional ion implantation device, in which (a) is a plan view and (1) is a front view. FIG. 2 is a block diagram of the main parts of the ion implantation apparatus of the present invention. FIG. 6 is an explanatory diagram of a mass separation slit plate used in the apparatus of the present invention. 1...Ion source 2 (2, 2)...Mass separator (magnetic pole) 6...Ion beam 4.8...Mass separation slit plate 5 (5', 5'')...Beam deflection magnet ( magnetic pole) 6.6
'...Rotating disk 7...Wafer 8, 8...Surinote Patent Attorney Junnosuke Dai Nakamura 1 Figure

Claims (1)

[Claims] an ion source, a mass separator and a mass separation slit plate that perform ion separation of the ion beam emitted from the ion source;
In an ion implantation apparatus equipped with a plurality of implantation chambers for performing ion implantation, a plurality of slits are provided in the mass separation slit plate, and a desired implantation is performed using the beam deflection function of the mass separator and the plurality of slits. An ion beam viewing device characterized by being configured to direct an ion beam into a chamber.