JPS59104494A - Formation of film - Google Patents

Formation of film

Info

Publication number
JPS59104494A
JPS59104494A JP21527382A JP21527382A JPS59104494A JP S59104494 A JPS59104494 A JP S59104494A JP 21527382 A JP21527382 A JP 21527382A JP 21527382 A JP21527382 A JP 21527382A JP S59104494 A JPS59104494 A JP S59104494A
Authority
JP
Japan
Prior art keywords
film
sample
electrolyte
formation
cathode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21527382A
Other languages
Japanese (ja)
Inventor
Seiichi Iwamatsu
誠一 岩松
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP21527382A priority Critical patent/JPS59104494A/en
Publication of JPS59104494A publication Critical patent/JPS59104494A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To inhibit the formation of a film at a dent part, by adding a liquid crystal to an electrolyte for forming a film on the surface of a cathode to debase round deposition. CONSTITUTION:Liquid crystals (e.g. paramethyl oxybenzylidene para-butyl aniline) 25 are dispersedly added to an electrolyte 22 in an electrolytic cell 21. An anode 23 and a cathode (i.e. a sample) 24 are dipped in said electrolyte 22. By applying an electric current between said two electrodes 23 and 24, a film 32 is formed on the sample 24. In the aforementioned method, an electric field is arranged along one direction by the added liquid crystals 25, to debase round deposition. Thus, the film 32 is formed at a required part without the formation of any other film on an unrequired dent part.

Description

【発明の詳細な説明】 本発明はメッキ処理に代表される電解液中での膜形成法
に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of forming a film in an electrolytic solution, typified by plating.

従来、メッキ処理等では、第1図に模式図で示すごとき
方法で膜形成が行なわれていた。すなわち、電解槽1内
には電解液2が満たされ、該電解液2内には陽極板3と
試料4が陰極に接続されて設置され、電源からの電力供
給によシ試料4の表面にメッキ層が形成される。
Conventionally, in plating processes and the like, film formation has been carried out by a method as shown schematically in FIG. That is, an electrolytic cell 1 is filled with an electrolyte 2, an anode plate 3 and a sample 4 are placed in the electrolyte 2, connected to the cathode, and the surface of the sample 4 is heated by supplying power from a power source. A plating layer is formed.

上記の方法で形成される膜は第2図に示す如く、基板1
1が複雑な形状の場合の脱皮のつき方は凹部への膜形成
が不要な場合にも凹部に膜が形成されるという欠点を有
する。
The film formed by the above method is as shown in FIG.
The method of shedding when No. 1 has a complicated shape has the disadvantage that a film is formed in the recesses even when it is not necessary to form a film in the recesses.

本発明はかかる従来技術の欠点をなくシ、膜形成の不要
々凹部へは膜形成が行なわれない電解液を提供すること
を目的とする。
It is an object of the present invention to eliminate the drawbacks of the prior art and to provide an electrolytic solution that does not form a film in concave portions where film formation is unnecessary.

上記目的を達成するための本発明の基本的な構成は、膜
形成法において、電解液中には液晶が添加され、陽極板
には陽極が、試料には陰極が接続されて、試料表面に膜
形成することを特徴とする。
The basic structure of the present invention to achieve the above object is that in the film forming method, liquid crystal is added to the electrolyte, an anode is connected to the anode plate, a cathode is connected to the sample, and the surface of the sample is It is characterized by forming a film.

以下、実施例によシ本発明を詳述する。Hereinafter, the present invention will be explained in detail with reference to Examples.

第2図は本発明による膜形成法を模式的に示したもので
あシ、電解槽21中には電解液22が満たされ、電解液
22中には液晶(MBBA ニバヲメチル・オキシ・ベ
ンジリデン・パラ−ブチル・アニリン等)25が分散剤
(表面活性剤)が添加される等して分散して添加され、
誘電離液22中に陽極板るが陽極に接続され、試料冴が
陰極に接続されて設置され、試料冴表面に膜形成がなさ
れる。
FIG. 2 schematically shows the film forming method according to the present invention. An electrolytic cell 21 is filled with an electrolytic solution 22, and the electrolytic solution 22 contains a liquid crystal (MBBA). - butyl aniline, etc.) 25 is added in a dispersed manner by adding a dispersant (surfactant),
An anode plate is connected to the anode in the diionizing liquid 22, a sample plate is connected to the cathode, and a film is formed on the surface of the sample plate.

上記の如き方法で試料表面に膜形成を施すと、第2図に
示す如く、試料の基板31の表面の凹部には膜が形成さ
れず、他の部分に膜32が形成される。
When a film is formed on the surface of a sample using the method described above, as shown in FIG. 2, the film is not formed in the recesses on the surface of the substrate 31 of the sample, but the film 32 is formed in other parts.

すなわち添加液晶が電界によシ一方向に配列してイオン
を凹部迄到達させないためにこのような現象をひき起こ
す。このように、不要な部分に膜形成なしに膜形成がで
きるという効果がある。
That is, this phenomenon occurs because the added liquid crystal is aligned in one direction due to the electric field and prevents ions from reaching the recess. In this way, there is an effect that a film can be formed without forming a film on unnecessary parts.

本発明はメッキ処理に限らず、電気漂動処理による膜形
成にも用いることができる。
The present invention is not limited to plating treatment, but can also be used to form a film by electrodrifting treatment.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来技術による膜形成法を示す模式図、第2図
は従来技術による試料表面7の膜の形成形状を示す断面
図、第3図は本発明による膜形成法を示す模式図、第4
図は本発明による試料表面への膜の形成形状を示す断面
図である。 l、21Φ・電解槽 2,22・・電解液 3,23・
・陽極板 4,24・・試料 部・・液晶 11 。 第2図
FIG. 1 is a schematic diagram showing a film forming method according to the prior art, FIG. 2 is a sectional view showing the formation shape of a film on a sample surface 7 according to the prior art, and FIG. 3 is a schematic diagram showing a film forming method according to the present invention. Fourth
The figure is a cross-sectional view showing the shape of a film formed on a sample surface according to the present invention. l, 21Φ・Electrolytic tank 2,22・・Electrolyte solution 3,23・
・Anode plate 4, 24...Sample part...Liquid crystal 11. Figure 2

Claims (1)

【特許請求の範囲】[Claims] 電解液中には液晶が添加され、誘電群液中には陽極板と
試料が設置され、陽極板には陽極が、試料には陰極が接
続されて、試料表面に膜形成することを特徴とする膜形
成法。
A liquid crystal is added to an electrolytic solution, an anode plate and a sample are placed in a dielectric group liquid, an anode is connected to the anode plate, a cathode is connected to the sample, and a film is formed on the sample surface. film formation method.
JP21527382A 1982-12-07 1982-12-07 Formation of film Pending JPS59104494A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21527382A JPS59104494A (en) 1982-12-07 1982-12-07 Formation of film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21527382A JPS59104494A (en) 1982-12-07 1982-12-07 Formation of film

Publications (1)

Publication Number Publication Date
JPS59104494A true JPS59104494A (en) 1984-06-16

Family

ID=16669574

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21527382A Pending JPS59104494A (en) 1982-12-07 1982-12-07 Formation of film

Country Status (1)

Country Link
JP (1) JPS59104494A (en)

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