JPS59104117A - Vacuum deposition device - Google Patents
Vacuum deposition deviceInfo
- Publication number
- JPS59104117A JPS59104117A JP21368382A JP21368382A JPS59104117A JP S59104117 A JPS59104117 A JP S59104117A JP 21368382 A JP21368382 A JP 21368382A JP 21368382 A JP21368382 A JP 21368382A JP S59104117 A JPS59104117 A JP S59104117A
- Authority
- JP
- Japan
- Prior art keywords
- exhaust
- gas
- film thickness
- vacuum vessel
- exhaust pipe
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/4558—Perforated rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
Abstract
Description
【発明の詳細な説明】 一／一 本発明は、減圧堆積装置の改良に関する。[Detailed description of the invention] 1/1 TECHNICAL FIELD The present invention relates to improvements in vacuum deposition apparatus.
回転したところで、結果として膜厚は均一となるものの
、各部分で堆積速度、膜質の異なる層が重なった状態で
平均化されるだけであり、本質的な改良とはなっていな
い。すなわち、従来の減圧堆積装置では原料ガスの排気
口は第７図に示すように、減圧容器１ｏの側面または底
面の一部に排気口２２として設けられていたにすぎず、
真空機器の排気口としては充分膜に立つが、原料ガスを
減圧容器中に供給して膜を堆積させるときにはガスのフ
ａ−’（流れの方向と密度）が更には後に示すグロー放
電を用いる場合は放電密度が場所によって変るため均一
膜厚均一膜質膜の成長は望めない。When rotated, the film thickness becomes uniform as a result, but the layers with different deposition rates and film qualities are simply averaged over each other, and there is no essential improvement. That is, in the conventional vacuum deposition apparatus, the exhaust port for the raw material gas was only provided as an exhaust port 22 on a part of the side or bottom surface of the vacuum container 1o, as shown in FIG.
The membrane is sufficient as an exhaust port for vacuum equipment, but when supplying raw material gas into a vacuum container and depositing a film, the glow discharge (direction and density of flow) of the gas is further shown below. In this case, the growth of a film with uniform thickness and quality cannot be expected because the discharge density varies depending on the location.
本発明は、以上の点に鑑み、減圧容器１０内に小孔を設
けた管状排気管を設けこれによって減圧容器内のガス密
度、ガスフローの均一化を計ることにより、均一な膜厚
、膜質の試料が得られる減圧堆積装置を提供することを
目的としてなされたものである。以下、本発明について
実施例に基づき説明する。In view of the above points, the present invention provides a tubular exhaust pipe with small holes in the vacuum container 10, thereby making the gas density and gas flow uniform within the vacuum container, thereby achieving uniform film thickness and film quality. The purpose of this design is to provide a vacuum deposition apparatus that can obtain samples of Hereinafter, the present invention will be explained based on examples.
第２図は本発明を光ＯＶＤ方式に利用した実施例で、１
０は減圧容器、２０は排気孔２１と設けた排気管で、排
気口２２に接続されている。排気管２０は基板加熱板７
０の周囲に沿って、かつ、原料ガス導入管４０ａ先端の
（この場合は光源９０からの光を妨げないように環状に
なっている。この環状の内側に供給口４０４が設けられ
ている。）ガスの供給口４０ルから基板加熱７０より遠
い位置に小孔２１が設けられて、環状に設けられている
。Figure 2 shows an example in which the present invention is applied to an optical OVD system.
0 is a depressurized container, and 20 is an exhaust pipe provided with an exhaust hole 21, which is connected to an exhaust port 22. The exhaust pipe 20 is connected to the substrate heating plate 7
0 and at the tip of the raw material gas introduction pipe 40a (in this case, it is annular so as not to block the light from the light source 90. A supply port 404 is provided inside this annular shape. ) A small hole 21 is provided in a ring shape at a position farther from the gas supply port 40 than the substrate heating 70.
なお、３０はガス導入接続口である。Note that 30 is a gas introduction connection port.
この構成により基板ｌ上のガス密度分布、ガスフローが
一様となり紫外光源９０からの光が、光の窓１９を通し
て一様に照射されていれば一様な膜厚と膜質の半導体膜
や絶縁膜を得ることができる。原料ガスとして８ｉＨ４
を用いたときはアモルファスシリコン、 ８１ｄＴｅ
、 ５ｉｓＨａを用いたときはＳｉＨ４より長波長の紫
外光でアモルファスシリコン、 ＳｉＨ４とｌ’ｈＯを
用いたときは５ｉ（ｈ、８ｉＨ４とＮＨｓを用いたとき
は窒化シリコン膜を得ることができる。紫外線光源とし
ては重水素ランプ、エキシマ−レーザーが用いられるが
減圧容器中に水銀蒸気が混入されていれば、光源９０は
水銀ランプでよい。空気中での紫外線の減衰を防ぐける
ことができる。With this configuration, the gas density distribution and gas flow on the substrate l are uniform, and if the light from the ultraviolet light source 90 is uniformly irradiated through the light window 19, a semiconductor film or an insulating film with a uniform film thickness and quality can be produced. membrane can be obtained. 8iH4 as raw material gas
When using amorphous silicon, 81dTe
, When 5isHa is used, amorphous silicon can be obtained with ultraviolet light with a longer wavelength than SiH4, when SiH4 and l'hO are used, 5i(h), and when 8iH4 and NHs are used, silicon nitride film can be obtained.Ultraviolet light A deuterium lamp or an excimer laser is used as the light source, but if mercury vapor is mixed in the vacuum container, a mercury lamp may be used as the light source 90. Attenuation of ultraviolet rays in the air can be prevented.
第３図は本発明をプラズマ０ＶＤ装置に適用した実施例
の構成図である。第３図に示す装置において、それぞれ
番号を付した部分の機能は第１図、第２図において番号
を付したものと同一である。５０はプラズマ放電を起す
ための放電々極で、高周波〜低周波〜直流の高圧電圧（
ＷθθＶ〜ＪｋＶ）が印加される。４０は絶縁材料で構
成された原料ガス導入管である。５１はガス混合作用も
含めた空間であり、５２ａ、 ５２Ａはガスの噴出孔で
ある。この装置においてもガス噴出孔５２６から基板１
より遠り距離に複数個の排気孔２１を有する管状排気部
を設けている。すなわち、基板ホルダーを兼ねた基板加
熱板はガス噴出孔と複数個の排気孔を有する排気部との
中間に設けられている。FIG. 3 is a block diagram of an embodiment in which the present invention is applied to a plasma 0VD device. In the apparatus shown in FIG. 3, the functions of the respective numbered parts are the same as those numbered in FIGS. 1 and 2. Reference numeral 50 is a discharge pole for causing plasma discharge, and it is a discharge pole for generating plasma discharge.
WθθV~JkV) is applied. 40 is a raw material gas introduction pipe made of an insulating material. 51 is a space including a gas mixing function, and 52a and 52A are gas ejection holes. In this device as well, the substrate 1 is
A tubular exhaust section having a plurality of exhaust holes 21 is provided at a longer distance. That is, the substrate heating plate, which also serves as a substrate holder, is provided between the gas injection hole and the exhaust section having a plurality of exhaust holes.
第９図は、この装置を用いて５ｉＪ（番からアモルファ
スシリコンをデポジションしたときの膜厚分布を示す。FIG. 9 shows the film thickness distribution when amorphous silicon was deposited from 5iJ using this apparatus.
基板加熱板の端部から３ｃｍ以内では、膜厚は７０％以
内の均一性を有していた。しかも膜質の指標として用い
られている光導電率の値の分布も一様で、グ〜ｊ Ｘ
１０−’ ｖ／ｃｍ（光強ＭＩ Ａ ＯｆＢＷ／ｃ＋Ｊ
、エアマスｌスペクトラム）ト高品質の値を示した。Within 3 cm from the edge of the substrate heating plate, the film thickness had a uniformity of within 70%. Furthermore, the distribution of photoconductivity values, which are used as an index of film quality, is uniform, and
10-' v/cm (light intensity MI A OfBW/c+J
, air mass spectra) showed high quality values.
一方、排気孔を有する管状排気部を設けない場合は、直
径方向及び円周方向←ＳＯ％以上の膜厚の分布が見られ
た。これは、排気孔を有する管状排気部を設けない場合
は、３−
減圧容器の内部でガス圧及びガス流が不均一であり、こ
のため放電々極と基板との間のプラズマの立ち方も不均
一であることによるものと思われる。。On the other hand, in the case where a tubular exhaust portion having an exhaust hole was not provided, a film thickness distribution of ←SO% or more in the diametrical direction and the circumferential direction was observed. This is because if a tubular exhaust part with an exhaust hole is not provided, the gas pressure and gas flow will be uneven inside the reduced pressure vessel, and therefore the plasma formation between the discharge electrode and the substrate will also be affected. This seems to be due to the non-uniformity. .
なお、第７図の結果を得た実験装置の放電々極及び基板
加熱板の直径は約コθ備、排気部は直径８１の環状を成
しており、その環状部上部に合計ｇ個の直径２鰭の排気
孔が設けられている。実験に用いた放電電力は３θＷで
ある。さらに、アンモニアガスを８ｉＴＴ４の約７００
倍導入して、シリコン窒化膜をデポジションした実験に
おいても、膜厚、屈折率分布に関して同様の改善が見ら
れた。In addition, the diameter of the discharge electrode and substrate heating plate of the experimental apparatus that obtained the results shown in Fig. 7 is approximately θ, and the exhaust part is in the form of a ring with a diameter of 81 cm, and a total of g pieces are placed in the upper part of the ring. It has two fin diameter exhaust holes. The discharge power used in the experiment was 3θW. Furthermore, ammonia gas was added to the
Similar improvements in film thickness and refractive index distribution were observed in experiments in which a silicon nitride film was deposited with double the amount of silicon nitride.
このように、本発明の減圧堆積装置により均一な膜厚、
膜質の試料を得ることが可能となり、その利用分野はア
モルファスシリコン、アモルファスシリコン、ゲルマニ
ウム、アモルファスシリコン・炭素などのアモルファス
半導体膜の成長、８１０２１窒化シリコン膜など絶縁膜
の成長、Ｓｎｏｗ、 Ｉｎ５Ｏｓ膜など透明導電膜の成
長、フッ化−乙一
タングステン、 Ｎ１（Ｃｏ）４などからの金属薄膜の
成長に利用することができる。In this way, the reduced pressure deposition apparatus of the present invention provides uniform film thickness and
It is now possible to obtain samples with film quality, and its fields of use include the growth of amorphous semiconductor films such as amorphous silicon, amorphous silicon, germanium, and amorphous silicon/carbon, the growth of insulating films such as 81021 silicon nitride film, and the growth of transparent films such as Snow and In5Os films. It can be used to grow conductive films and metal thin films from tungsten fluoride, N1(Co)4, etc.
以上、具体例で示したように排気孔を複数個設けた排気
部を減圧容器内に設けることによって、光ＣＶＴ） 、
プラダＹ ＯＶＤなどを含む減圧ＣＶＤ装置において、
膜厚分布を従来装置に較べて著しく均一に改善すること
ができる。As shown in the specific example above, by providing an exhaust section with a plurality of exhaust holes in the vacuum container, optical CVT),
In low pressure CVD equipment including Prada Y OVD etc.
The film thickness distribution can be significantly improved in uniformity compared to conventional devices.
なお、実施例では排気部は環状管であったが、適用する
減圧容器の形状及び基板設置方式に応第３図は本発明を
プラズマＣ′ＶＤ装置に適用した説明図、第７図は本発
明によりデポジションしたアモルファスシリコン膜の膜
厚分布を説明するための図である。In the embodiment, the exhaust part was an annular pipe, but depending on the shape of the reduced pressure vessel to be applied and the substrate installation method, FIG. 3 is an explanatory diagram of the present invention applied to a plasma C'VD apparatus, and FIG. FIG. 3 is a diagram for explaining the film thickness distribution of an amorphous silicon film deposited according to the invention.
図中、■は基板、ｌＯは減圧容器、１１は減圧容器の蓋
、１９は光の窒、２０は排気管、２１は排気孔、２２は
排気口、８０はガス導入接続口、４０．４０ｅ１は原料
ガス導入管、４０Ａはガス噴出口、５ｏは放電々極、５
１はガス混合空間、５２ａ、 ５２Ａはガス噴出孔、６
０は荒ぢ１０．７０は基板加熱板、８ｏは観察窓、９０
は光源、９１は光源と光の窓の間の間隙である。In the figure, ■ is the substrate, IO is the vacuum container, 11 is the lid of the vacuum container, 19 is the optical nitrogen, 20 is the exhaust pipe, 21 is the exhaust hole, 22 is the exhaust port, 80 is the gas introduction connection port, 40.40e1 is the raw material gas introduction pipe, 40A is the gas outlet, 5o is the discharge electrode, 5
1 is a gas mixing space, 52a, 52A is a gas ejection hole, 6
0 is rough, 10.70 is substrate heating plate, 8o is observation window, 90
is a light source, and 91 is a gap between the light source and the light window.
＞１図 １ 単２図＞Figure 1 1 AA figure
Claims (1)
部と排気部より少なくともなる固体膜を成長せしめる減
圧堆積装置であって、前記排気部が排気孔を複数個設け
た管状であることを特徴とする減圧堆積装置。 ■ 特許請求の範囲第１項記載の減圧堆積装置において
、ストップバルブを設けた荒引口を有することを特徴と
する減圧堆積装置。 ３）特許請求の範囲第１項記載の減圧堆積装置において
、排気孔を複数個設けた管状排気部が減圧容器内部で取
り外し可能であることを特徴とする減圧堆積装置。 ｌＩ）特許請求の範囲第１項記載の減圧堆積装置におい
て、前記排気孔と原料ガス供給部の中間に基板ホルダー
を設置したことを特徴とする減圧堆積装置。[Scope of Claims] C. A vacuum deposition apparatus for growing a solid film comprising at least a vacuum container, a source gas supply section and an exhaust section provided in the vacuum container, wherein the exhaust section is provided with a plurality of exhaust holes. A vacuum deposition device characterized by having a tubular shape. (2) A reduced pressure deposition apparatus according to claim 1, characterized in that it has a roughing port provided with a stop valve. 3) The reduced pressure deposition apparatus according to claim 1, wherein the tubular exhaust section provided with a plurality of exhaust holes is removable inside the reduced pressure container. lI) A reduced pressure deposition apparatus according to claim 1, characterized in that a substrate holder is installed between the exhaust hole and the raw material gas supply section.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21368382A JPS59104117A (en) | 1982-12-06 | 1982-12-06 | Vacuum deposition device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21368382A JPS59104117A (en) | 1982-12-06 | 1982-12-06 | Vacuum deposition device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59104117A true JPS59104117A (en) | 1984-06-15 |
Family
ID=16643247
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21368382A Pending JPS59104117A (en) | 1982-12-06 | 1982-12-06 | Vacuum deposition device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59104117A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0396239A2 (en) * | 1989-04-03 | 1990-11-07 | Daidousanso Co., Ltd. | Apparatus for producing semiconductors by vapour phase deposition |
| US5118642A (en) * | 1991-01-24 | 1992-06-02 | Daidousanso Co., Ltd. | Method for producing semiconductors |
| US7980003B2 (en) * | 2006-01-25 | 2011-07-19 | Tokyo Electron Limited | Heat processing apparatus and heat processing method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5319181A (en) * | 1976-08-06 | 1978-02-22 | Hitachi Ltd | Low pressure reaction apparatus |
| JPS57100720A (en) * | 1980-12-16 | 1982-06-23 | Seiko Epson Corp | Manufacture of amorphous semiconductor film |
-
1982
- 1982-12-06 JP JP21368382A patent/JPS59104117A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5319181A (en) * | 1976-08-06 | 1978-02-22 | Hitachi Ltd | Low pressure reaction apparatus |
| JPS57100720A (en) * | 1980-12-16 | 1982-06-23 | Seiko Epson Corp | Manufacture of amorphous semiconductor film |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0396239A2 (en) * | 1989-04-03 | 1990-11-07 | Daidousanso Co., Ltd. | Apparatus for producing semiconductors by vapour phase deposition |
| US5118642A (en) * | 1991-01-24 | 1992-06-02 | Daidousanso Co., Ltd. | Method for producing semiconductors |
| US7980003B2 (en) * | 2006-01-25 | 2011-07-19 | Tokyo Electron Limited | Heat processing apparatus and heat processing method |
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