JPS59103253A - Operation method for scanning conversion type storage tube - Google Patents

Abstract

PURPOSE:To reduce write and read cycles by applying and holding mutually different voltages that are higher than the voltage in which the secondary electron emission ratio is set to 1 first to two collectors, writing electric signals, applying and holding the same voltage, and reading the signals. CONSTITUTION:For write, a switch is set as shown in the figure to generate potential difference in first and second collector electrodes 6 and 7. When the higher voltage than an electrode 22 is applied to the electrodes 6 and 7 from power supplies 28 and 30 and write is performed by an electron beam, secondary electrons are generated and electron-positive hole pairs are also generated in a solid. These electrons are caught by the electrode 7 and the positive hole increases the potential of a storage surface 8. When the same voltage is applied to the electrodes 6 and 7 using switches 26 and 30 as contacts c and d, the center of the storage surface 8 has higher potential than the electrodes 6 and 7 due to the positive hole for a write section and no-write section is kept in the same potential. For read, the amount of electrons applied to the electrodes 6 and 7 differs depending upon the presence of the positive hole and the potential of the storage surface 8 and electrodes 6 and 7 is set to the same erase status. As a result, write and read are made possible and the cycle can be reduced.

Description

DETAILED DESCRIPTION OF THE INVENTION Technical Field The present invention relates to a method of operating a scan conversion type storage tube used in a storage oscilloscope, an A-Df converter, etc. Concerning the method of operation of the tube.

Conventional technology: A scan conversion type that applies an electrical signal to a deflection plate, writes a waveform corresponding to the signal onto a storage target using a telescope beam, and can read out the entire stored waveform as needed. Storage tube sections and scan converter tubes are known. Furthermore, as schematically shown in FIGS. 1 and 2, JP-A-55-1066 discloses that a single collector electrode (2) is formed on an insulating single crystal group &il+.
A storage layer made of an insulating single crystal, i.e., a storage layer, is bombarded with a full-scale electron beam to generate all electron-hole pairs, and these are used for storage to completely improve the charging speed. Target is disclosed.

By the way, in the gap when a signal is written to the storage target j shown in FIGS. 1 and 2, as shown in Japanese Patent Laid-Open No. 55-50558, first, in order to ignore the prime state, the collector electrode (2) is The potential of the secondary electron emission rate δ (secondary electron number 71st order Shimako number) is set to a value higher than the first intersection point where the number of secondary electrons becomes 1 at the beginning of the mosquito (for example, 2350 V with respect to the cathode), and the electron beam is to fully impact the target. This allows the board (
The accumulation surface (3) on the surface of 1) has a potential of 2350V, which is the same as the potential of the collector electrode (2). Next, erase potential difference vgi1%
In order to do this, the potential of the collector electrode (2) is set to a voltage below the first potential difference, for example, +lOV selected from the range of +lO to +30V with respect to the cathode, and then bombarded with an electron beam.
The accumulation side (3) should be at the same level as Yin. As a result, an erase potential difference of 10 V occurs between the storage surface (3) and the collector electrode (2).

Next, in order to write a signal to the storage target, the potential of the collector ′tun (2) is made lower than the first crossing potential, for example l Q kV with respect to the cathode, and the storage target is selectively to project. As a result, the writing portion (beam*strike portion) is, for example, 99° with respect to the cathode.
The potential becomes 91V (-9V with respect to the collector electrode (2)), and is maintained at 9990V (-20V with respect to the collector electrode (2)), which is obtained by subtracting the erase potential difference of 10V from the non-collecting part (10 kV). , a charge bump of -9V and -1-OV is formed with respect to the collector electrode (2).

Next, when taking the FDt, the collector electrode +21 is irradiated with cathode light and set to, for example, +5V. As a result, the potential of the sunlit part becomes -4V with respect to the cathode, while the potential of the non-lightened part becomes -15V (with respect to the cathode). Imaichi: If you perform a rask run with a kiln-transformed AM beam with the beam cut-off pressure at the target being 15cm, -4V
The seriko beam reaches the indented part of the disc, and the electron beam reaches the -5V non-written part, making it possible to distinguish between these parts and fight against them.

However, in the conventional method, it is necessary to write after a target potential difference h has been obtained by the prime operation and the erase operation, and it has been impossible to start writing quickly. In addition, since a voltage lower than the first voltage difference potential is applied to the collector electrode during wire removal, it is required to change the voltage significantly between writing and reading, and rapid voltage switching is essential. Met. The above-mentioned problem similarly occurs in targets that are full accumulation layers of amorphous 'X' insulators such as Karas or polycrystalline insulators such as 8i02.

OBJECTS OF THE INVENTION It is, therefore, an object of the present invention to provide a method of operating a scan-converting storage device that allows short-circuiting of write and read cycles.

Structure of the Invention To achieve the above object, the present invention provides a plurality of storage substrates made of an insulating material such as a single crystal, a polycrystal, or an amorphous material such as glass, preferably having a resistivity of 101 ohms or more. The electron beam is deflected and projected onto a screen target having a structure in which the collector electrodes of the plurality of collector electrodes are arranged parallel to each other in an electrically insulated state to write all electrical signals and then read them. The voltage at which the secondary electron emission rate initially becomes 1 is applied to at least two collectors of the storage target, which are in a state where there is substantially no potential difference between them and the storage surface of the storage target. All different voltages are applied, and while maintaining the applied state of the different voltages, the storage target is selectively attacked with an electron beam to inject an electric signal, and then a specified number of collector electrodes are abraded at the first intersection. This same i
The present invention relates to a method of operating a nuclear accumulator tube of the erotactic conversion type, which is characterized in that a non-modulated electron beam is kept in a voltage applied state, and a non-modulated electron beam is used to completely traverse the storage target and read a written signal sound.

Effects According to the above invention, since a number of collector electrodes are provided and different voltages are all applied to generate a potential difference between the collector electrodes, writing is possible even when the erase potential difference is substantially zero. . In addition, since a voltage higher than the first cross potential is applied to the collector edge during reading, the voltage change width when switching the mode from writing to reading becomes smaller.
This allows for quick switching. Further, since the reading is performed with a withstand voltage higher than the first crossing potential, the reading is destructive, and when the reading is completed, the collector electrode and the storage region become substantially at the same potential, and storage can be performed immediately. Furthermore, even if erasing is to be performed before presetting, it is not necessary to apply an erasing potential difference, so only prime mode is sufficient.
Erasing time can be significantly shortened.

Example Next, embodiments of the present invention will be described with reference to the drawings.

First Embodiment (Figs. 3 to 6) The storage target (4) according to the first embodiment shown in principle in Figs. 3 to 4 is a sapphire single crystal that is an absolute substance single crystal. A first collector electrode (6) and a second collector Toyo (sword) electrically separated from each other are provided on one flat main surface of the substrate (5). A sapphire single crystal substrate t5
1 is an electrical insulator, so if the first and second collector electrodes t61 f7) are arranged separately, they are electrically insulated. First and second collector electrodes (6r
(7r is chromium (Cr) metal with a thickness of 0.05μm
It is coated to a thickness of ~ several μm and formed into a comb shape using a photoresist technique, and the summer striation portions (6a) (7a) are formed with a width of approximately 0.5 μm to 50 μm. The striated portions (7a) of the second collector electrode (7) are inserted between the striated portions (6a) of the comb-shaped first collector pole (6), and each striated portion (6aX7a) The electrodes 6 are alternately arranged in parallel, so the electrode pattern in the target effective area is striped. Between the respective filament portions (6a) (7), a part of the filament accumulation surface (8), that is, the surface of the accumulation region (9) made of the single crystal substrate (5) is exposed. The interval between the portions (6a) and (7a), that is, the pitch, is set to several μm to several 100 μm, which is smaller than the diameter of the solar beam.

Figure 5 shows the 'j' accumulation target (
4) shows a set meal conversion type accumulation g. In this situation, the electron gun side, the deflection system, etc.
It is constructed by sequentially arranging a collimation thread 113) and an accumulation target (4).

On the electron gun side, a cathode side, a control 105), an accelerating electrode ub+, a focusing electrode (17), and an asteig 11 are arranged in sequence.
& produces an electron beam directed towards the target (4). The deflection system u21 consists of a vertical deflection system consisting of a pair of horizontal deflection plates arranged fd in the beam path, and a horizontal deflection system ulJl consisting of a pair of horizontal deflection plates.
Electron beam k in two direct directions, vertical and horizontal
Head towards m. Collimation thread lJ3+ is wall ″ll
Consists of f-pole c71J and filled mesh potential (water,
It acts as a collimation lens (convex lens) to make the low-cost, low-cost laser beam incident on all targets (4) directly at the reading site. The storage target (4) has first and second lead members (1) as means for applying different voltages to the first and second collector electrodes (1).
c) (to) are connected, and these are each exposed outside the enclosure utl).

The first lead member 12 is connected via a resistor 125) and a switch circuit 6) to a prime (erasing) guard wire 127),
It is selectively connected to the first storage wire I28) and the reading wire I28). The second lead member is connected via a switch circuit to the second writing die during writing, and to the first lead member during prime and read, and the first lead member is connected to: The same potential is applied. An output line fl:m is connected to the first lead member via a capacitor u2.

In order to operate the storage tube shown in FIG.
-75v8 degree voltage, accelerating electrode α6) is QV (electrode (
The reference voltage of the circle is +1 kV), the voltage is optimally adjusted to the focusing electrode μD and the Astig voltage Ba according to the voltage of the electron beam, and the voltage of the wall 11υ is OV (+1 kV to the cathode side).
kV), 1.5 kV for field mesh electrode 4
V (2.5 kV for negative = a41) is applied.

Operation According to the present invention, if a target (4) having a plurality of collector electrodes +61 (71) is used, writing is possible even if the erase potential layer is low. mode is essentially unnecessary.However, in order to obtain a reliable erased state, a step corresponding to the conventional prime mode may be provided.Prime the electrical current to this target (4) prior to writing the number. When obtaining all the states (erased states), first turn on the contacts af of the switch circuit (white) and the switch circuit (co)
By turning on contact d2, the first and second collector electrodes (6) (71'r prime type t7!η
Connect the collector electrode (6) (the total potential of the sword is higher than the first alternating potential, e.g. 1350cm (235.OV with respect to the cathode)
) and target the target (4) with an unmodulated electron beam.
Conquer the entire effective running area of #! do. As a result, all accumulation planes (8) become collector'kame@! , 161 (1350V (2350V with respect to cathode), which is the same as the force of
(7)'s strictness is also set high in the
Based on the operation in which the emitted 2-electrons are captured at the highest potential part, the rise in the potential of the accumulation surface (8) is prevented, and the potential of the rosette surface (8) becomes the collector electrode (67 (7J f) potential). Also, the Nariko-hole pair also depends on the potential arrangement between the accumulation surface 181 and the collector '[01(61(7'l),
The storage surface (8) works so that it has the same potential as the collector electrode (61 (71). Therefore, the erase paper level difference Vz between the collector electrode (61 (71) and the storage surface (8) Does not occur.

According to the present invention, since writing is possible even when the erase potential difference VK is low, a transition force signal to the writing state is immediately supplied. Also, the first collector K! (Different voltages are supplied between 61 and the second collector tm (7) so that a potential difference in the range of several volts to several hundred volts is generated. In other words, the contact of the switch circuit (2b) is turned on and the first write operation is performed. From the power source I7!81 to the first collector electrode (6), a voltage higher than the voltage of the filled mesh electrode (24, e.g. 9
Apply a voltage of kV (xokV to the cathode), turn on the contact efc of the switch circuit q, and turn on the second soda-filling power source 64, for example. io, i for lkV cathode
A voltage □ of kv) is applied to the second collector electrode (7).

Figure 6 is a schematic band diagram to explain the writing operation, and if we take the state in which the storage surface (8) and the collector electrode (6) (sword) are at the same potential due to erasing as shown in Figure 6. , when writing collector '4. admiration f6J (7
By applying different voltages to the electrodes 1, the state shown in FIG. 6 (6) is achieved, and a drift electric field corresponding to the collector potential difference ■=ioov is generated in the accumulation region between the electrodes (6) and (7). Note that the potential of the collector electrode (73 is
6) It should be more delicious.

As shown in Figure 6 (6), when writing is performed by electron beam impact in a state where a collector dark potential difference is applied and the collector potential is higher than the first father difference potential, secondary electrons are emitted, and electron-hole pairs are created in the solid. occurs. The emitted secondary electrons and adult atoms in the solid are captured by the collector electrode (7), but the holes are captured by the surface levels near the storage surface and increase the potential of the storage surface (8). , a band state as shown in FIG. 60 is completely formed.

Next, the contact di of the switch circuit 6υ is turned on, and the contact C of the switching circuit 6υ is turned on, and the first and second collectors (61(1)) are
: When the same full voltage is applied from TJ-'A Ul'd), the band bends as shown in Figure 6 at the writing part, and the center of the accumulation 11i]tS+ is at the collector center t6). (7) Higher potential. On the other hand, the portion to which no writing has been performed remains in the state shown in FIG. 6(4). As a result, a charge pattern corresponding to writing is generated on the target (4).

Collector M pole 16) in reading mode (7)
The voltage is equal to or higher than the first crossing potential, and preferably the voltage of the collector electrode (6111) at the time of writing is several tens of times lower than the voltage of the collector electrode (6111).
This value is in the range of 0 volts. Collector electrode (61 (
When the entire surface of the target (4) is scanned with an unmodulated electron beam while applying the same voltage to Since the part is used to neutralize the holes, the amount of electrons flowing into the collector is small.On the other hand, in the non-written part as shown in Figure 6, Since no holes occur in the holes, a large amount of electrons flow into the collector electrode [61 (7). Therefore,
It becomes possible to distinguish and detect the written part and the non-written part depending on the magnitude of the current obtained from the collector electrode L pole (61 (7). When reading as described above, in the ideal case After reading, the potential of the storage surface (8) becomes the same as the potential of the collector electrode +61 (7),
Eventually, it will be in an erased state. In addition, as shown in Fig. 5, if there are two filled mesh electrodes, the collector electrode (6)
(It is necessary to set the potential of 71 higher than the potential of filled mesh electrode 4.

This is to prevent the secondary electrons generated by the impact from the sampling beam from being captured by the fill electrode 7 and the collector electrode +61 f7J.

As is clear from the above, this practical system has the following advantages.

tal The voltage value of the collector electrode +61t7J is kept at a value higher than the first crossing potential during the cycle consisting of erasing, settling, and reading, or the cycle consisting of writing and reading, so when switching modes, The width of the voltage change is reduced, and the mode switching time can be shortened. Therefore, it is possible to read immediately after writing,
It is possible to provide an oscilloscope or an A-U converter that performs readings and readings in almost real time.

Even in a state where fbl erase potential difference - is zero, writing can be performed due to the effect of collector potential delay Vw, so the operation of applying erase potential difference Vt f becomes unnecessary, and writing can be started quickly.

(After C1 is read, it becomes an erased state, so it is possible to omit the erase operation (prime operation)'!il-.

(d) Since the voltage fluctuation width of the collector poles (6) and (7) is small, the configuration of the switching circuit becomes easy.

+61 Collector electrode (6) during reading +71 potential' (I- Since it was set to the highest in the storage tube, the secondary electrons generated based on the reading beam
a(+74, etc.), making it possible to read accurately.

Second Embodiment (FIG. 7) A scan conversion type storage tube according to a second embodiment of the present invention shown in FIG. 7 is obtained by omitting the fill electrode 7 and the electrode 4 from the storage tube shown in FIG. be. Therefore, parts common to those in FIG. 5 are given the same reference numerals and their explanations will be omitted. In this way, even when a filled mesh electrode is not provided,
In the first embodiment, it is possible to write to and read from colleagues, and the following effects are also neglected.

■ If a filled mesh is not provided, the electron beam will not be captured by the filled mesh, resulting in lower beam efficiency and faster writing speed.

■ Writing by secondary electrons from the filled mesh electrode is eliminated, improving resolution.

Note that during reading and erasing by the storage tube in FIG.
(The potential of 61(7) must be set higher than the potential of the entire wall anode electrode Cυ.

Third Embodiment (Figs. 8 and 9) The target (4a) shown in Figs. 8 and 9 is a sapphire monocrystalline substrate (5) similar to the target (4) in Fig. 3.
The first and second collectors are provided in a tooth shape on top of the electrode, and a third collector electric circle is provided in a meandering manner between the two collectors.It should be noted that each electrode The striated portion (6a
) (7a) The width of (34a) is 0.5 μm to 50 μm1, and the pitch of these is several μm to several 100 μm. In this way, the three collectors 'Sengoku (6) (sword 131 set is Temo, and the target effective area is the respective sujiri part (6a) (7
a) (34a) are arranged parallel to each other and have a stripe shape as a whole, so it can be used in the same way as the target (4) in FIG. 3.

That is, this target (4a) is used by being incorporated into a storage tube as shown in FIG. 5 or 6, similar to the target (4) in FIG. 3. In addition to incorporating the three collectors into the storage unit, attach the three collectors '4' to the lead member (c) of the diagram.
The collector electrode 1 is led out independently from the vacuum enclosure, and
61 (7) The structure shown in the figure is such that it is possible to apply voltages completely independently. Although various write and read operation methods are possible using this target (4a)', a typical operation method will be described below.

First, when erasing, three collector electrodes (6) (
The same voltage is applied to the sword diagram and the same procedure as in the first embodiment shown in FIG. 3 is performed. That is, the same voltage is applied to each collector electrode (6) (
If a force of 13 mm is applied, it can be regarded as a single electrode, so the third
It can be erased in exactly the same way as shown in the figure.

Next, when writing, the same voltage (for example, 9 kV) is applied to the first and second collector electrodes (6) +7), and the first and second collector electrodes are applied to the third collector electrode. 'K Qs< (6) (7) A voltage (for example, 9.1 kV) (i7) higher than (7) is applied, and a beam impact sound is produced as in the case of the first embodiment. As a result, in the case of the 10th embodiment Exactly the same sagging can be achieved.That is, the potential difference V at wound 1j
It becomes possible to write in a state where wi is present, and the same operation and effect as in the first embodiment can be obtained.

During reading, the first, second, and third collector electrodes (
6) (Apply the same voltage to both sides and perform the same procedure as in the first embodiment.

Another writing method for the target laser (4b) in FIG. 6 is to apply different direct pressures to each of the electrodes (6), (7), and to project the entire writing beam. In this case, a voltage of, for example, 9 kV is applied to the first collector electrode (6) and a voltage of the next highest voltage, for example, 9 kV is applied to the third collector electrode (6).
．． 1 kV is applied, and the second collector electrode (for example, G, which is the most common type for swords, 2 kvl seal) is applied. This makes it possible to give a potential difference Vwi of 100 V between each ton. It becomes possible to write in exactly the same way as in the previous case.

Modifications Although the embodiments of the present invention have been described above, the present invention is not limited thereto, and includes modifications as follows, for example.

Prisoner 410 As shown in Fig. 410, the third
The collector voltage p (34a) k may be provided in a grid pattern.

That is, first, the third
Examples of collector electrodes are provided in a lattice pattern, and absolute @ r @ 36) are provided on the third collector electrode diagram outside the target effective area, and then the first and second collector electrodes are provided in a completely toothed pattern. It's okay. Even when formed in this way, the linear portions (6a), (7a), and (34a) of each electrode are arranged parallel to each other in the target effective area, so the effect is exactly the same as that of the target (4a) in Fig. f, 8. The effect is long-lasting.

(5) It is also possible to provide a full backside electric socket on the backside of the substrate t51 and apply an appropriate voltage.

(C) A polycrystalline 5iOz layer may be provided on the silicon, and this 5402 scrap may be used as an insulator accumulation layer.

0 Sapphire crystal substrate (instead of 51, MgO1C
aF2. An insulating material such as MgFz or the like may be used as a whole crystal substrate.

(g) Substrate (5) An amorphous negative material such as gold glass may be used.

(?) 'ni & admiration t61 (7) 1341k Cr,
It may also be formed from a single or composite layer of AI, Ni, IVIO, Au, etc. Alternatively, a transparent electrode such as 5n (J2) may be used.

◎ In each example, the scarlet part (6a) (7a) (a4a)
The extending direction of the beam was made to match the horizontal fixed direction of the beam, but
They may be arranged so that they are perpendicular to each other.

0 In the storage tube shown in FIG. 5, the collimation thread U31k is provided by the wall '11υ and the filled mesh cap 14, but a structure may be used in which the collimation thread Q3) is omitted.

(I) It is of course applicable not only to writing waveforms but also to writing digital signals.

(J) A structure in which an insulator accumulation layer is provided on an alumina substrate or the like may be used.

(6) The circuit for applying voltage to the first and second collector electrodes +61 (7) may be configured as shown in FIG. That is, the power source (281 rule is set to a different voltage with a temperature difference of 100 V, for example, and the contact di of the switch circuit U is turned on only when erasing and extinguishing, and the same voltage is applied to the two collector electrodes (6) (sword). Then, when installing the roof, turn on contact e7 of the switch circuit mountain and connect the two collector electrodes (6
)(7) may be supplied with different voltages.

[Brief explanation of the drawing]

Figure 1 is a plan view showing the entire principle of a conventional target;
The figure is a sectional view taken along the line...-II of the target shown in FIG. 1, FIG. 3 is a plan view showing the principle of the target of the first embodiment of the present invention, and FIG. 4 is a IV-IV line view of the target shown in FIG. 3. a cross-sectional view, Figure 5 shows the accumulation V that incorporates the entire target in Figure 3.
FIG. 6 is a band diagram schematically showing the state of penetration in the target of FIG. 3 using an energy band, and FIG. FIG. 8 is a plan view showing the entire principle of the target of the embodiment in FIG. 3, FIG. 9 is a sectional view taken along the line ■IXi of the target in FIG. 8, FIG. 10 is a plan view showing the principle of a modified target, and FIG. 11 is a circuit diagram showing a collector electrode pressure application circuit of a modified example. (4)°...Storage target, (5)...Substrate, (6
)...first collector electrode, (7)...second collector electrode rotation (8)...accumulation surface, (9)...accumulation area. Agent: Noritsugu Takano (Volunteer to write procedural amendments) Commissioner of the Japan Patent Office: Kazuo Wakasugi 1, Indication of the case, 1982 Patent Application No. 212376, 2, Title of the invention: Method of operation of scan-converting storage tube 3, Person making the amendment Case Relationship with applicant/Person 4: Detailed description of the invention in the agent's specification. +1+ Correct ``containment'' on page 7, line 5 of the specification to ``mJ0'' (2) Correct ``alpha thirst'' on page 18, line 4 of the specification to r (81J
Correct to. (3) Correct rc31]J on page 18, line 7 of the specification to "en". (4) Correct "sho" in line 11 of page 21 of the specification to "sho".

Claims (1)

[Scope of Claims] fil A storage targeter having a structure in which a plurality of collector electrodes are arranged in parallel to each other in an electrically insulated state on a storage substrate made of an insulating material) K An electric signal is generated by deflecting and projecting an electron beam. When writing and then reading, secondary electrons are emitted into at least two of the collectors of the storage target in which there is substantially no potential difference between the plurality of collector electrodes and the storage surface of the substrate. Apply all voltages that are different from the voltage at which the rate becomes 1 at first, and while keeping the different voltages applied, selectively bombard the accumulation target with the gold electron beam to write all electric signals, and then write the electric signal. The plurality of collector poles have the first
Scan conversion characterized in that substantially the same voltage higher than the cross potential is applied, and while the same voltage application state is maintained, the accumulator target is scanned with an unmodulated electron beam to obtain the write signal km. How the type storage tube works. [Collector electrode V of autopsy number when reading 21nil
cl:i'] The method of operating a scan conversion type storage tube according to claim 1, wherein the voltage applied is the lowest voltage among the storage tubes.