JPS5899200A - リチウムタンタレ−ト単結晶の単一分域化方法 - Google Patents

リチウムタンタレ−ト単結晶の単一分域化方法

Info

Publication number
JPS5899200A
JPS5899200A JP56195609A JP19560981A JPS5899200A JP S5899200 A JPS5899200 A JP S5899200A JP 56195609 A JP56195609 A JP 56195609A JP 19560981 A JP19560981 A JP 19560981A JP S5899200 A JPS5899200 A JP S5899200A
Authority
JP
Japan
Prior art keywords
single crystal
temp
electric field
furnace
application
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56195609A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6234719B2 (cg-RX-API-DMAC7.html
Inventor
Kenji Enokida
榎田　憲治
Yoshinori Okada
義憲 岡田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP56195609A priority Critical patent/JPS5899200A/ja
Publication of JPS5899200A publication Critical patent/JPS5899200A/ja
Publication of JPS6234719B2 publication Critical patent/JPS6234719B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/30—Niobates; Vanadates; Tantalates

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Inorganic Insulating Materials (AREA)
JP56195609A 1981-12-07 1981-12-07 リチウムタンタレ−ト単結晶の単一分域化方法 Granted JPS5899200A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56195609A JPS5899200A (ja) 1981-12-07 1981-12-07 リチウムタンタレ−ト単結晶の単一分域化方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56195609A JPS5899200A (ja) 1981-12-07 1981-12-07 リチウムタンタレ−ト単結晶の単一分域化方法

Publications (2)

Publication Number Publication Date
JPS5899200A true JPS5899200A (ja) 1983-06-13
JPS6234719B2 JPS6234719B2 (cg-RX-API-DMAC7.html) 1987-07-28

Family

ID=16344001

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56195609A Granted JPS5899200A (ja) 1981-12-07 1981-12-07 リチウムタンタレ−ト単結晶の単一分域化方法

Country Status (1)

Country Link
JP (1) JPS5899200A (cg-RX-API-DMAC7.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0921215A1 (en) * 1997-12-05 1999-06-09 Crystal Technology, Inc. Electromagnetic radiation absorbant crystals of lithium niobate and lithium tantalate and methods of preparing the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5364699A (en) * 1976-11-22 1978-06-09 Toshiba Corp Extending method for single orientation zone of single crystal

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5364699A (en) * 1976-11-22 1978-06-09 Toshiba Corp Extending method for single orientation zone of single crystal

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0921215A1 (en) * 1997-12-05 1999-06-09 Crystal Technology, Inc. Electromagnetic radiation absorbant crystals of lithium niobate and lithium tantalate and methods of preparing the same

Also Published As

Publication number Publication date
JPS6234719B2 (cg-RX-API-DMAC7.html) 1987-07-28

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