JPS5899176A - Semiconductor ceramic baking method - Google Patents
Semiconductor ceramic baking methodInfo
- Publication number
- JPS5899176A JPS5899176A JP56196526A JP19652681A JPS5899176A JP S5899176 A JPS5899176 A JP S5899176A JP 56196526 A JP56196526 A JP 56196526A JP 19652681 A JP19652681 A JP 19652681A JP S5899176 A JPS5899176 A JP S5899176A
- Authority
- JP
- Japan
- Prior art keywords
- fired
- objects
- semiconductor ceramic
- baking method
- firing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 10
- 239000004065 semiconductor Substances 0.000 title claims description 7
- 239000000919 ceramic Substances 0.000 title description 2
- 238000010304 firing Methods 0.000 claims description 13
- 239000000696 magnetic material Substances 0.000 claims 1
- 229910052573 porcelain Inorganic materials 0.000 description 6
- 238000010405 reoxidation reaction Methods 0.000 description 4
- 239000000654 additive Substances 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Furnace Charging Or Discharging (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
導体磁器はＢ＋ｌＯＯ，とτｉｏ、に０ａ００Ｂ 、
Ｐｂ０．８ｒ００゜等の添加物とＹ、 Ｏ，等の半導体
化材を秤量配合し、これを湿式混合して１１００〜１２
００’Ｃで仮焼した後ボールミルで粉砕混合し、必要に
応じてさらに添加物を配合し、混合粉末にバインダーを
加えてＦｆｒ足の形状に圧縮成形し、これを電気炉で１
３００〜１３５０℃で焼成することによりて製造される
。第１図はその焼成装置における従来の被焼成物の載置
台を示している。[Detailed description of the invention] The conductive ceramic has B+lOO, and τio, 0a00B,
Additives such as Pb0.8r00° and semiconductor materials such as Y, O, etc. are weighed and blended, and this is wet mixed to give a
After calcining at 00'C, it is pulverized and mixed in a ball mill, further additives are added as needed, a binder is added to the mixed powder, compression molded into the shape of an Ffr foot, and this is pulverized in an electric furnace.
It is manufactured by firing at 300 to 1350°C. FIG. 1 shows a conventional mounting table for objects to be fired in the firing apparatus.
円盤状に成形された被焼成物１はボート２の内部に積み
重ねて収容されている。３はボート２の側壁に設けた空
気孔で、被焼成物１に十分な空気を供給することによっ
てその再酸化を促進する。The objects 1 to be fired, each shaped into a disk shape, are stored in a boat 2 in a stacked manner. Reference numeral 3 denotes an air hole provided in the side wall of the boat 2, which promotes reoxidation of the object to be fired 1 by supplying sufficient air to it.
ところで上記従来の載置台による焼成は、被焼成物１か
ボート２内に積み重ねである丸め、全体を均一に加熱す
る仁とが困難である。また、被焼成物のバインダの分解
によって発生する還元性ガスによって被焼成物は部分的
に還元されるが、その再酸化が均一に行−なわれず、製
品の特性にバラツキを生じ易い。さらに、積み重ねた被
焼成物の相互間に融着を生ずることがある。By the way, in the above-mentioned conventional firing using the mounting table, it is difficult to stack the objects to be fired 1 in the boat 2, to roll them up, and to uniformly heat the entire object. Further, although the object to be fired is partially reduced by the reducing gas generated by the decomposition of the binder of the object to be fired, the reoxidation is not uniformly performed, which tends to cause variations in the characteristics of the product. Furthermore, fusion may occur between stacked objects to be fired.
本発明は上記のよう表欠点のない焼成法を提供すること
を目的とする。The object of the present invention is to provide a firing method that does not have the above-mentioned surface defects.
本発明は多数の被焼成物を均一の状態で焼成することを
意図するものである。以下、その実施例を第２図につい
て説明する。１ｉｔ円盤状に成形された被焼成物、２は
ボート、３は１対の側板４．５に所定の間隔をおいて設
けた空気孔である。１対の側板４．５の中間にはこれと
平行に中板６が設けられ、中板６と側板４．５との間に
はこれらを結合するスペーサ７が両側および中間の上下
に設けである。８は側板４．５および中板６に相対向し
て設けたホルダで、その先端に凹部９を有し、との凹部
９に被焼成物１０周辺の一部が係止される。本発明は上
記の構造を有する支持台によって被焼成物を支持し、こ
れを電気炉中で焼成するため゛、多数の被焼成物を均一
々雰囲気のなかで同一条件で焼成することができる。し
たがって製品の品質にノ（ラツキがなく、特性の一定し
た半導体磁器をうろことができる。本発明の焼成法と従
来の焼成法とを比較するために、第１図および第２図の
装置によって直径２０鬼、厚さ５■に成形したチタン酸
バリウム系半導体磁器円盤を１５２０℃で１時間焼成し
た後、１時間５０℃の速度で室温まで冷却してその特性
をテストしたところ、次嶽に示すような結果かえられた
。The present invention is intended to uniformly fire a large number of objects to be fired. The embodiment will be described below with reference to FIG. The object to be fired is formed into a 1-it disk shape, 2 is a boat, and 3 is an air hole provided at a predetermined interval in a pair of side plates 4.5. A middle plate 6 is provided in parallel between the pair of side plates 4.5, and spacers 7 are provided between the middle plate 6 and the side plates 4.5 on both sides and above and below the middle to connect them. be. A holder 8 is provided facing the side plates 4.5 and the middle plate 6, and has a recess 9 at its tip, and a part of the periphery of the object to be fired 10 is locked in the recess 9. In the present invention, the objects to be fired are supported by a support having the above structure and fired in an electric furnace, so that a large number of objects to be fired can be fired under the same conditions in a uniform atmosphere. Therefore, it is possible to produce semiconductor porcelain with consistent characteristics without any fluctuation in the quality of the product.In order to compare the firing method of the present invention with the conventional firing method, the apparatus shown in FIGS. A barium titanate semiconductor porcelain disk molded to a diameter of 20mm and a thickness of 5cm was fired at 1520℃ for 1 hour, then cooled to room temperature at a rate of 50℃ for 1 hour to test its properties. I got the results as shown.
上記の表かられかるように、本発明の焼成法による磁器
は従来の焼成法による磁器よシも抵抗値が均一で安定し
ており、耐電圧も高く、かつ、焼成物の融着かない。こ
れは多数の被焼成４物がその全表面を露出して同一の雰
囲気内において同一条件で加熱されるため、再酸化およ
び焼成が十分かつ、均一に行なわれることによる吃のと
考えられる。As can be seen from the above table, the porcelain produced by the firing method of the present invention has a more uniform and stable resistance value than the porcelain produced by the conventional firing method, has a higher withstand voltage, and does not fuse the fired products. This is thought to be due to the fact that many objects to be fired are heated in the same atmosphere under the same conditions with their entire surfaces exposed, so that reoxidation and firing are carried out sufficiently and uniformly.
以上述べたように本発明の半導体磁器の焼成法は、所定
の形状に成形した多数の被焼成物のすべてがその全表面
を露出するように、これを支持台に所定の間隔をおいて
並行に配列支持して電気炉内で焼成するから、すべての
被焼成物を同−雰囲気内で同一条件で十分に焼成するこ
とができる。したがって再酸化が十分に行なわれ、製品
の品質にバラツキがなく、特性の安定した半導体磁器を
うることかできる。As described above, in the method for firing semiconductor porcelain of the present invention, a large number of objects to be fired formed into a predetermined shape are placed parallel to each other at a predetermined interval on a support stand so that all of their surfaces are exposed. Since the objects are arranged and supported in the electric furnace and fired in the electric furnace, all the objects to be fired can be sufficiently fired in the same atmosphere and under the same conditions. Therefore, reoxidation is sufficiently carried out, and semiconductor porcelain with stable characteristics can be obtained without variations in product quality.
第１図：従来の焼成法において使用される被焼成物の載
置台で、０）は長手方向の側面図、←）は巾方向の側面
図である。
第２図二本発明の焼成法において使用される被焼成物の
支持台で、（イ）は長手方向の側面図、←）は巾方向の
側面図、（ハ）は平面図である。
第５図：第２図における被焼成物支持部分の拡大分解図
〔記号） １−・被焼成物、２・・・ボート、３・・・
空気孔、４．５・・・側板％６・・・中板、７・・・ス
ペーサ、８・・・ホルダー、９・・・凹部
牙１図Figure 1: A mounting table for objects to be fired used in the conventional firing method, 0) is a side view in the longitudinal direction, and ←) is a side view in the width direction. FIG. 2 shows a support stand for the object to be fired used in the firing method of the present invention, (a) is a side view in the longitudinal direction, (←) is a side view in the width direction, and (c) is a plan view. Figure 5: Enlarged exploded view of the support part of the object to be fired in Figure 2 [Symbols] 1--Object to be fired, 2...Boat, 3...
Air hole, 4.5...Side plate %6...Middle plate, 7...Spacer, 8...Holder, 9...Recess fang 1 diagram
Claims (1)
全表面を露出するように、これを支持台に所定の間隔を
おいて並行に配列支持して電気炉内で焼成することを特
徴とする半導体磁−の焼成法A large number of objects to be fired formed into a predetermined shape are arranged and supported in parallel on a support stand at a predetermined interval so that all of their surfaces are exposed, and fired in an electric furnace. Firing method for semiconductor magnetic material
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56196526A JPS5899176A (en) | 1981-12-07 | 1981-12-07 | Semiconductor ceramic baking method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56196526A JPS5899176A (en) | 1981-12-07 | 1981-12-07 | Semiconductor ceramic baking method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5899176A true JPS5899176A (en) | 1983-06-13 |
Family
ID=16359199
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56196526A Pending JPS5899176A (en) | 1981-12-07 | 1981-12-07 | Semiconductor ceramic baking method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5899176A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63296U (en) * | 1986-06-20 | 1988-01-05 | ||
| JPH0652876U (en) * | 1992-12-28 | 1994-07-19 | 帝国インキ製造株式会社 | Golf gloves |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5519668A (en) * | 1978-07-29 | 1980-02-12 | Nissan Motor Co Ltd | Meter for vehicle |
-
1981
- 1981-12-07 JP JP56196526A patent/JPS5899176A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5519668A (en) * | 1978-07-29 | 1980-02-12 | Nissan Motor Co Ltd | Meter for vehicle |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63296U (en) * | 1986-06-20 | 1988-01-05 | ||
| JPH0652876U (en) * | 1992-12-28 | 1994-07-19 | 帝国インキ製造株式会社 | Golf gloves |
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