JPS5899008A - Oscillation and modulation circuit - Google Patents

Oscillation and modulation circuit

Info

Publication number
JPS5899008A
JPS5899008A JP19808181A JP19808181A JPS5899008A JP S5899008 A JPS5899008 A JP S5899008A JP 19808181 A JP19808181 A JP 19808181A JP 19808181 A JP19808181 A JP 19808181A JP S5899008 A JPS5899008 A JP S5899008A
Authority
JP
Japan
Prior art keywords
modulation
oscillation
circuit
frequency
bias
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19808181A
Other languages
Japanese (ja)
Inventor
Seiichi Yamaguchi
清一 山口
Ichiro Shibazaki
一郎 柴崎
Shogo Iizuka
飯塚 捷吾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP19808181A priority Critical patent/JPS5899008A/en
Publication of JPS5899008A publication Critical patent/JPS5899008A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/30Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator
    • H03B5/32Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator
    • H03B5/36Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator active element in amplifier being semiconductor device
    • H03B5/366Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator active element in amplifier being semiconductor device and comprising means for varying the frequency by a variable voltage or current
    • H03B5/368Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator active element in amplifier being semiconductor device and comprising means for varying the frequency by a variable voltage or current the means being voltage variable capacitance diodes

Abstract

PURPOSE:To obtain an oscillation and modulation circuit having flat frequency characteristics in modulation sensitivity, by connecting an element of a minute capacitance between input terminals of a varactor element and an active element as a part of an oscillation element connected to a modulation signal source and a bias source. CONSTITUTION:A circuit taking a transistor (TR)3, and a crystal oscillator 4 as major elements is oscillated in a radio frequency. A modulation signal is applied from an input terminal 1 via a coupling capacitor (C)5. A bias voltage is applied to a varactor diode 2 via a bias resistor (R)18 from a bias power supply terminal 17. A C16 having a minute capacitance is connected between a connecting point A with the C5, the R18 and the diode 2 and an input terminal 20 of the TR3. In this case, the C16 and the input resistor of the TR3 form a pass region for radio frequencies and a block region for the modulation frequency. Thus, a crystal oscillation modulation circuit having a flat frequency characteristic in the modulation sensitivity is obtained and used for high speed data transmission also.

Description

【発明の詳細な説明】 本発明は、水晶発振器を変調器としても兼用する発振変
調回路に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an oscillation modulation circuit that uses a crystal oscillator also as a modulator.

従来の周波数変調回路を第1図に示す。同図は音声周波
数帯域0.3〜3KHzの変調信号を無線周波数が10
石〜数十用の発振器に加えた変調回路で1は変調信号の
入力端子、2は電圧可変容量素子、3はトランジスタ、
4は水晶発振子である。
A conventional frequency modulation circuit is shown in FIG. The figure shows a modulated signal in the audio frequency band of 0.3 to 3 KHz with a radio frequency of 10
In the modulation circuit added to the oscillator for stones to several dozen, 1 is the input terminal of the modulation signal, 2 is the voltage variable capacitance element, 3 is the transistor,
4 is a crystal oscillator.

5は変調信号の結合コンデンサ、6.7は発振条件を決
めるコンデンサ、8は水晶発振子4に並列に接続された
容量補償用のコイル、9はトランジスタ3のエミッタ抵
抗、1o、11はそれぞれペースバイアス電圧回路を構
成する抵抗、12は電源端子13に接続されたバイパス
コンデンサ、14は結合コンデンサ、16は発振出力の
生じる出力端子である。
5 is a coupling capacitor for modulation signals, 6.7 is a capacitor that determines oscillation conditions, 8 is a capacitance compensation coil connected in parallel to crystal oscillator 4, 9 is an emitter resistor of transistor 3, 1o and 11 are paces, respectively. A resistor forming a bias voltage circuit, 12 a bypass capacitor connected to a power supply terminal 13, 14 a coupling capacitor, and 16 an output terminal where an oscillation output is generated.

上記構成においてトランジスタ3.水晶発振子4を主要
素子とする回路が無線周波数で発振する。
In the above configuration, transistor 3. A circuit whose main element is a crystal oscillator 4 oscillates at a radio frequency.

変調入力端子1から加えられた変調信号は可変容量素子
2に加えられその容量がその変調信号に応じて変化し、
周波数変調される。
A modulation signal applied from the modulation input terminal 1 is applied to the variable capacitance element 2, and its capacitance changes according to the modulation signal.
Frequency modulated.

ところが変調入力端子1から加えられた信号は可変容量
素子2のみならず、トランジスタ3のベースにも加えら
れるためにそのベースバイアスが変調信号で変化してい
た。したがって第21図に示すように無線周波数の出力
Bの振巾が包絡線Aで示すように変調信号で変調を受け
ていた。
However, since the signal applied from the modulation input terminal 1 is applied not only to the variable capacitance element 2 but also to the base of the transistor 3, the base bias changes with the modulation signal. Therefore, as shown in FIG. 21, the amplitude of the radio frequency output B was modulated by the modulation signal as shown by the envelope A.

また第3図に示すように変調周波数が高くなると、Cに
示すように変調感度が低下する欠点があった。なお同図
中、D、Eは水晶振動子4の副共振の影響であり、通常
は数10kHzのところで発生する。
Further, as shown in FIG. 3, when the modulation frequency becomes high, there is a drawback that the modulation sensitivity decreases as shown in C. In the figure, D and E are the effects of sub-resonance of the crystal resonator 4, which usually occurs at several tens of kHz.

本発明は上記欠点を除去し、変調感度の周波数特−件が
平坦な水晶発振変調回路を提供しようとするものである
The present invention aims to eliminate the above drawbacks and provide a crystal oscillation modulation circuit in which the frequency characteristics of modulation sensitivity are flat.

以下本発明についてその実施例と共に説明する。The present invention will be explained below along with examples thereof.

第4図実施例を示すもので、第1図の回路とはトランジ
スタ3と結合コンデンサ5との間に微小容量のコンデン
サ16を設け、バイアス電圧端子(第2のバイアス源)
17から加えられるバイアスを抵抗18から加えるよう
にした点のみ相違し、他は同じである。
Fig. 4 shows an embodiment, and the circuit shown in Fig. 1 is different from that in which a capacitor 16 of minute capacity is provided between the transistor 3 and the coupling capacitor 5, and a bias voltage terminal (second bias source)
The only difference is that the bias applied from 17 is applied from resistor 18, and the rest is the same.

次に上記実施例の動作を説明する。可変容量素子2には
バイアス電圧端子17から直流バイアス電圧が供給され
ると共に、変調入力端子1からの変調信号が重畳される
。この時、結合点Aから能動端子側を見ると、等制約に
第5図のように、微小容量16と並列に接続された抵抗
10.11と能動素子3の入力抵抗19とからなるノ・
イパス回路が形成される。従って、コンデンサ16の容
量値を小さく選んで、前記・\イパス回路が、無線用波
数では通過頭載となる一方で変調周波数帯では阻止領域
になるようにすることができる。こ・・ため、変調信号
には、能動素子側が開放状態に見えるので能動素子3の
入力端子20には殆んど変調電圧が誘起されず、従って
その動作を乱すこともない。
Next, the operation of the above embodiment will be explained. A DC bias voltage is supplied from the bias voltage terminal 17 to the variable capacitance element 2, and a modulation signal from the modulation input terminal 1 is superimposed thereon. At this time, when looking at the active terminal side from the connection point A, as shown in FIG.
A path circuit is formed. Therefore, by selecting the capacitance value of the capacitor 16 to be small, the above-mentioned path circuit can be set in the pass-through region at radio wave numbers, while being in the blocking region at the modulation frequency band. Therefore, since the active element side appears to be in an open state in the modulation signal, almost no modulation voltage is induced at the input terminal 20 of the active element 3, and therefore, its operation is not disturbed.

第7図はこの実施例の変調動作時の出力波形で、変調信
号による振巾変調が生じていないことを示している。
FIG. 7 shows the output waveform during the modulation operation of this embodiment, showing that no amplitude modulation occurs due to the modulation signal.

また第8図は変調特性を示すもので変調感度の周波数特
性がほぼ平坦であることを示している。
Further, FIG. 8 shows the modulation characteristics and shows that the frequency characteristics of modulation sensitivity are almost flat.

第6図は本発明の他の実施例を示すもので抵抗1o、1
1、能動素子の入力抵抗19が大きい場合に用いる回路
である。21は発振周波数に対しては高いインピーダン
スとなり、変調周波数には数ミリオームで作用する高周
波コイル、22/″i変調周波数をバイパスする大容量
″のコンデンサである。他の回路素子は第4図に示され
たものに対応する。
FIG. 6 shows another embodiment of the present invention, in which resistors 1o, 1
1. This circuit is used when the input resistance 19 of the active element is large. 21 is a high frequency coil that has a high impedance with respect to the oscillation frequency and acts at several milliohms with respect to the modulation frequency; and 22/"a large capacitance capacitor that bypasses the i modulation frequency." Other circuit elements correspond to those shown in FIG.

変調信号は微小容量のコンデンサ16と大容量のコンデ
ンサ22で分割され、能動素子3の動作条件を変化させ
るような成分は殆をど生じず、第4図に示したものと同
様な動作を行なう。
The modulation signal is divided by a microcapacitance capacitor 16 and a large capacitance capacitor 22, and almost no components that change the operating conditions of the active element 3 are generated, so that the same operation as shown in FIG. 4 is performed. .

なお上記実施例では発振用の主要素子として・くイポー
ラ型のトランジスタ3を用いている力;、その代りにF
ET等の能能動素子を用いるようにすることもできる。
Note that in the above embodiment, a polar transistor 3 is used as the main element for oscillation;
It is also possible to use active elements such as ET.

以−ト説明したように、本発明によれば、能動素子の入
力端子に変調周波数が加わることを阻1トする一方で、
無憬周波数を通過させるノ・イノくス回路を形成して、
変調信号が変調素子にのみ印力口されるようにすること
により広い周波数範囲にわたって変調感度を一定に保つ
ことができるので、高速データ伝送回路にも使用できそ
の工業的価イ直は犬である。
As explained above, according to the present invention, while preventing the modulation frequency from being applied to the input terminal of the active element,
By forming a no-innocent circuit that passes uncontrolled frequencies,
By ensuring that the modulation signal is applied only to the modulation element, the modulation sensitivity can be kept constant over a wide frequency range, so it can also be used in high-speed data transmission circuits, and its industrial value is outstanding. .

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来の発振変調回路の結alス、第2図はその
要部の信号波形図、第3図はその特性1図、第4図は本
発明の一実施例による発振変調回路の結線図、第6図は
その要部の等価回路図、第6図は他の実施例の結線図、
第7図は上H已実施他の要部の信号波形図、第8図はそ
の特性1閃である。 2・・・・・可変容量素子、3・・・・・能動素子、1
3・・・・・・電源端子、16・・・・・・微〆」・容
量、17・・・・バイアス電圧端子、2Q・・・・・入
力端子。 代理人の氏名 弁理士 中 尾 敏 男 /1−1)・
1名第1図 第2図 第3図 変訓周追E 第4図     第5図 第6図
Fig. 1 shows the results of a conventional oscillation modulation circuit, Fig. 2 shows the signal waveforms of its main parts, Fig. 3 shows its characteristics 1, and Fig. 4 shows the oscillation modulation circuit according to an embodiment of the present invention. A wiring diagram, Fig. 6 is an equivalent circuit diagram of the main part, Fig. 6 is a wiring diagram of another embodiment,
FIG. 7 is a signal waveform diagram of other important parts of the above H implementation, and FIG. 8 is a diagram of its characteristics. 2...Variable capacitance element, 3...Active element, 1
3...Power supply terminal, 16...Fine capacitance, 17...Bias voltage terminal, 2Q...Input terminal. Name of agent: Patent attorney Toshio Nakao /1-1)・
1 person Figure 1 Figure 2 Figure 3 Henken Shuoi E Figure 4 Figure 5 Figure 6

Claims (1)

【特許請求の範囲】[Claims] 第1のバイアス源によりバイアスの与えられた能動素子
と、変調信号源に接続され、発振素子の一部としての可
変容量素子と、前記可変容量素子に接読さnた渠2のバ
イアス源と、前記能動素子の入力端子2oと前記可変容
量素子の間に接続された微小容量とを備え、少くとも前
記微小容量と前記能動素子の入力抵抗とで変調周波数を
阻止すると共に発振周波数を通過させるバイパス回路を
形成したことを特徴とする発振変調回路。
an active element biased by a first bias source; a variable capacitance element connected to a modulation signal source and serving as a part of an oscillation element; , comprising a minute capacitor connected between the input terminal 2o of the active element and the variable capacitance element, and at least the minute capacitor and the input resistance of the active element block the modulation frequency and allow the oscillation frequency to pass. An oscillation modulation circuit characterized by forming a bypass circuit.
JP19808181A 1981-12-08 1981-12-08 Oscillation and modulation circuit Pending JPS5899008A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19808181A JPS5899008A (en) 1981-12-08 1981-12-08 Oscillation and modulation circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19808181A JPS5899008A (en) 1981-12-08 1981-12-08 Oscillation and modulation circuit

Publications (1)

Publication Number Publication Date
JPS5899008A true JPS5899008A (en) 1983-06-13

Family

ID=16385192

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19808181A Pending JPS5899008A (en) 1981-12-08 1981-12-08 Oscillation and modulation circuit

Country Status (1)

Country Link
JP (1) JPS5899008A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1995027329A1 (en) * 1994-04-04 1995-10-12 Motorola Inc. A tuning circuit

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5533311A (en) * 1978-08-30 1980-03-08 Nec Corp Frequency modulating device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5533311A (en) * 1978-08-30 1980-03-08 Nec Corp Frequency modulating device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1995027329A1 (en) * 1994-04-04 1995-10-12 Motorola Inc. A tuning circuit
US5495208A (en) * 1994-04-04 1996-02-27 Motorola, Inc. Wide band tunable and modulatable reference oscillator

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