JPS5897992U - Voltage driven transistor power conversion circuit - Google Patents
Voltage driven transistor power conversion circuitInfo
- Publication number
- JPS5897992U JPS5897992U JP19103481U JP19103481U JPS5897992U JP S5897992 U JPS5897992 U JP S5897992U JP 19103481 U JP19103481 U JP 19103481U JP 19103481 U JP19103481 U JP 19103481U JP S5897992 U JPS5897992 U JP S5897992U
- Authority
- JP
- Japan
- Prior art keywords
- reverse bias
- circuit
- voltage
- bias voltage
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第1図は従来の回路側図、第2図は本案の一実施例回路
図である。
1・・・主スイツチングトランジスタ、A・・・駆動回
路、2・・・制御用トランジスタ、4・・・駆動電源、
5・・・駆動トランス、5a、5b、5cおよび15・
・・1次、2次、帰還およびスイッチ起動信号取得巻線
、6・・・べiス抵抗、7・・・スピードアップ用コン
デンサ、8・・・帰還用ダイオニド、9・・・極性選択
回路(ダイオード)、10・・・主直流電源、11・・
・出カドランス、11a、 1 lb、 21−1次
、2次、逆バイアス電圧取得巻線、12・・・負荷回路
、16・・・極性選択ダイオード、17・・・抵抗、1
8・・・高速高入力インピーダンスのスイッチング素子
、19・・・抵抗、20・・・コンデンサ、22・・・
極性選択ダイオード、23・・・逆バイアス電圧保持用
ダイオード、24・・・抵抗。FIG. 1 is a side view of a conventional circuit, and FIG. 2 is a circuit diagram of an embodiment of the present invention. DESCRIPTION OF SYMBOLS 1... Main switching transistor, A... Drive circuit, 2... Control transistor, 4... Drive power supply,
5... Drive transformer, 5a, 5b, 5c and 15.
・・Primary, secondary, feedback and switch start signal acquisition windings, 6・Base resistance, 7・Speed-up capacitor, 8・Feedback dionide, 9・Polarity selection circuit (diode), 10... Main DC power supply, 11...
・Output transformer, 11a, 1 lb, 21-primary, secondary, reverse bias voltage acquisition winding, 12... Load circuit, 16... Polarity selection diode, 17... Resistor, 1
8... High speed, high input impedance switching element, 19... Resistor, 20... Capacitor, 22...
Polarity selection diode, 23... Reverse bias voltage holding diode, 24... Resistor.
Claims (1)
ツチングトランジスタのベースに接続される駆動トラン
スの2次巻線と直列に極性選択回路を設けると共に、出
カドランスに設けた逆バイアス電圧取得巻線により主ス
イツチングトランジスタのオン期間において主電源から
逆バイアス電圧を作って保持する逆バイアス電圧取得回
路と、上記駆動トランスに設けたスイッチ起動信号取得
巻線により検出された制御用トランジスタのオフ時駆動
トランスに生ずるフライバック電圧によりオンして、上
記逆バイアス電圧取得回路の保持逆バイアス電圧を主ス
イツチングトランジスタのベースとエミッタ間に接続す
る高入力インピーダンスの逆バイアス制御用スイッチ回
路を設けて、上記極性選択回路により駆動回路の制御用
トランジスタオフ時駆動トランスの2次巻線回路を高イ
ンピーダンスとしてフライバック電圧により主スイツチ
ングトランジスタに逆バイアス電圧のみを供給し、上記
逆バイアス電圧取得回路の保持電圧により逆バイアス電
流を供給するようにして、主スイツチングトランジスタ
をターンオフさせることを特徴とする電圧駆動型トラン
ジスタ電力変換回路。In a two-voltage drive type transistor power conversion circuit, a polarity selection circuit is provided in series with the secondary winding of the drive transformer connected to the base of the main switching transistor, and a reverse bias voltage acquisition winding provided on the output transformer is used to select the main switch. A reverse bias voltage acquisition circuit generates and maintains a reverse bias voltage from the main power supply during the ON period of the controlling transistor, and a switch activation signal acquisition winding provided in the drive transformer detects the voltage generated in the drive transformer when the control transistor is OFF. A high input impedance reverse bias control switch circuit that is turned on by a flyback voltage and connects the retained reverse bias voltage of the reverse bias voltage acquisition circuit between the base and emitter of the main switching transistor is provided, and the polarity selection circuit When the control transistor of the drive circuit is off, the secondary winding circuit of the drive transformer is set to high impedance, and only a reverse bias voltage is supplied to the main switching transistor by the flyback voltage, and the reverse bias is maintained by the holding voltage of the reverse bias voltage acquisition circuit. A voltage-driven transistor power conversion circuit characterized in that a main switching transistor is turned off by supplying current.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19103481U JPS5897992U (en) | 1981-12-23 | 1981-12-23 | Voltage driven transistor power conversion circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19103481U JPS5897992U (en) | 1981-12-23 | 1981-12-23 | Voltage driven transistor power conversion circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5897992U true JPS5897992U (en) | 1983-07-04 |
JPS6227027Y2 JPS6227027Y2 (en) | 1987-07-10 |
Family
ID=30104520
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP19103481U Granted JPS5897992U (en) | 1981-12-23 | 1981-12-23 | Voltage driven transistor power conversion circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5897992U (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5616719U (en) * | 1979-07-17 | 1981-02-13 | ||
JPS56135660A (en) * | 1980-03-24 | 1981-10-23 | Gantan Funaki | Roof construction |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52121963A (en) * | 1976-04-05 | 1977-10-13 | Kurita Water Ind Ltd | Fluidized-bed-type biological treating apparatus |
-
1981
- 1981-12-23 JP JP19103481U patent/JPS5897992U/en active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5616719U (en) * | 1979-07-17 | 1981-02-13 | ||
JPS56135660A (en) * | 1980-03-24 | 1981-10-23 | Gantan Funaki | Roof construction |
Also Published As
Publication number | Publication date |
---|---|
JPS6227027Y2 (en) | 1987-07-10 |
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