JPS5897917A - Channel selecting device - Google Patents
Channel selecting deviceInfo
- Publication number
- JPS5897917A JPS5897917A JP19752781A JP19752781A JPS5897917A JP S5897917 A JPS5897917 A JP S5897917A JP 19752781 A JP19752781 A JP 19752781A JP 19752781 A JP19752781 A JP 19752781A JP S5897917 A JPS5897917 A JP S5897917A
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- afc
- tuning
- emitter
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03J—TUNING RESONANT CIRCUITS; SELECTING RESONANT CIRCUITS
- H03J7/00—Automatic frequency control; Automatic scanning over a band of frequencies
- H03J7/02—Automatic frequency control
Landscapes
- Channel Selection Circuits, Automatic Tuning Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、テレビ受像機等に用いられる電子チ゛ ユー
ナ方式の選局装置に関し、同調電圧の大小に関係なく正
確な自動周波数制御を行なうことのできる装置を提供す
るものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an electronic tuner type tuning device used in television receivers, etc., and provides a device that can perform accurate automatic frequency control regardless of the magnitude of tuning voltage. It is.
テレビ受像機用の電子チューナにおいては、選局用の同
調電圧と自動周波数制御(AFC)用のAFC電圧とを
抵抗で合成してチューナの可変容量ダイオードに印加す
るようになされている。ところが、従来のこの種の装置
においては、同調電圧が高くなって合成用の抵抗を介し
てAFC電圧の発生回路に流れ込む電流が大きくなると
そのAFC電圧の基準レベルが、変化してしまい、Sカ
ーブ特性が上下非対称になるためにAFC引込範囲がせ
まくなってしまうという不都合があった。In an electronic tuner for a television receiver, a tuning voltage for channel selection and an AFC voltage for automatic frequency control (AFC) are combined using a resistor and applied to a variable capacitance diode of the tuner. However, in conventional devices of this type, when the tuning voltage increases and the current flowing into the AFC voltage generation circuit via the synthesis resistor increases, the reference level of the AFC voltage changes, causing the S curve to change. Since the characteristics are vertically asymmetrical, there is a problem that the AFC pull-in range becomes narrow.
そこで1本発明はかかる従来の欠点を解消して、同調電
圧の大小に、関係なく常に正確なAFC動作を達成する
ことのできる装置を提供することを目的とするものであ
る。SUMMARY OF THE INVENTION Therefore, one object of the present invention is to provide a device that can eliminate such conventional drawbacks and always achieve accurate AFC operation regardless of the magnitude of the tuning voltage.
以下、本発明の一実施例につき、図面を参照して説明す
る。図において、1はテレビ受像機の電子チューナで、
可変容量ダイオード2を同調素子として有してい石。3
はその可変容量ダイオード2に選局のために印加すべき
同調電圧を発生する同調電圧発生回路、4は選局すべき
チャンネルに応じてその同調電圧を切換える選局回路で
ある。Hereinafter, one embodiment of the present invention will be described with reference to the drawings. In the figure, 1 is the electronic tuner of the television receiver.
It has a variable capacitance diode 2 as a tuning element. 3
4 is a tuning voltage generation circuit that generates a tuning voltage to be applied to the variable capacitance diode 2 for tuning, and 4 is a tuning circuit that switches the tuning voltage depending on the channel to be tuned.
また、6はチー−す1からの映像中間周波(VIP)信
号の周波数を弁別してAFC制御用のAFC電圧を発生
するAFC検波回路である。Further, 6 is an AFC detection circuit that discriminates the frequency of the video intermediate frequency (VIP) signal from the team 1 and generates an AFC voltage for AFC control.
この装置においては、このAFC検波回路5のAFC電
圧をエミッタフォロア回路6を構成するトランジスタ7
のペースに加え、そのエミッタから取り出して1合成用
抵抗回路網8に加え、ここで先の同調電圧と所定比率で
合成してから電子チー−す1の可変容量ダイオード2に
加えるようにしている。9,1oはバイアス抵抗、11
はエミッタ抵抗である。12〜16は合成用の抵抗、1
6はVHF選局時とUHF選局時とでAFC電圧の合成
比率を切換えるための電界効果トランジスタである。V
HF選局時にのみ選局回路からの信号により電界効果ト
ランジスタ16を導通させて、AFC電圧の印加比率を
大きくする。In this device, the AFC voltage of the AFC detection circuit 5 is transferred to the transistor 7 constituting the emitter follower circuit 6.
In addition to the pace, it is taken out from its emitter and added to the 1 synthesis resistor network 8, where it is synthesized with the previous tuning voltage at a predetermined ratio and then added to the variable capacitance diode 2 of the electronic team 1. . 9, 1o are bias resistors, 11
is the emitter resistance. 12 to 16 are resistances for synthesis, 1
Reference numeral 6 denotes a field effect transistor for switching the combination ratio of AFC voltages between when selecting a VHF channel and when selecting a UHF channel. V
Only during HF tuning, the field effect transistor 16 is made conductive by a signal from the tuning circuit to increase the application ratio of the AFC voltage.
、このような構成によれば、エミッタフォロア回路6を
設けたことによりAFC検波回路6を合成抵抗回路網8
から分離することができており、AFC電圧の中心電圧
は抵抗9,1oの分圧比によって定められたバイアス電
圧にトランジスタ70ベース・エミッタ間電圧(約0.
TV)を加えた一定値を安定に維持することができる。According to such a configuration, by providing the emitter follower circuit 6, the AFC detection circuit 6 is connected to the composite resistance network 8.
The center voltage of the AFC voltage can be separated from the bias voltage determined by the voltage division ratio of the resistors 9 and 1o, and the base-emitter voltage of the transistor 70 (approximately 0.
TV) can be stably maintained at a constant value.
同調電圧発生回路3からの同調電圧が高くなって抵抗1
4゜15を介してエミッタフォロア回路6側へ流れ込む
電流が増加しでも、その電流は低インピーダンスのトラ
ンジスタ7に流れ、AFC電圧の基準レベルを変動させ
ることはなくなる。かくして、この装置によれば、電子
チューナ1の可変容量ダイオード2に加えられる同調電
圧の大小に関係なくAFC電圧の基準レベルを所定値に
正しく維持することができ、AFC電圧のSカーブが上
下非対称になることもなく、従ってAFC引込範囲を広
くしておくことができて正確なAFC制御動作を確保す
ることができるものである。The tuning voltage from the tuning voltage generation circuit 3 becomes high and the resistor 1
Even if the current flowing into the emitter follower circuit 6 side through the 4.degree. Thus, according to this device, the reference level of the AFC voltage can be correctly maintained at a predetermined value regardless of the magnitude of the tuning voltage applied to the variable capacitance diode 2 of the electronic tuner 1, and the S curve of the AFC voltage can be maintained vertically asymmetrically. Therefore, the AFC pull-in range can be widened and accurate AFC control operation can be ensured.
なお、以上の実施例においてはエミッタフォロア回路を
用いたが、電界効果トランジスタを用いたソースフォロ
ア回路を用い、そのゲートにAFC検波回路からのAF
C電圧を入力し、ソースからAGC電圧を出力して合成
抵抗回路網に加えるようにしても同様の作用効果を得る
ことができる。Although the emitter follower circuit was used in the above embodiment, a source follower circuit using a field effect transistor was used, and the AF from the AFC detection circuit was used at its gate.
Similar effects can be obtained by inputting the C voltage and outputting the AGC voltage from the source and adding it to the composite resistance network.
以上のように、本発明によれば、電子チューナの=r変
容量ダイオードに加える同調電圧の大小に関係な(AF
C電圧の基準レベルを所定値に維持することができ、正
確な動作を達成することのできる有用な選局装置を得る
ことができるものである。As described above, according to the present invention, the (AF
Thus, a useful channel selection device can be obtained which can maintain the reference level of the C voltage at a predetermined value and can achieve accurate operation.
図は本発明の一実施例における選局装置の回路図である
。
1・・・・・・電子チューナ、2・・・・・・可変容量
ダイオード、3・・・・・・同調電圧発生回路、4・・
・・・・選局回路、6・・・・・・AFC検波回路、6
・・・・・・エミッタフォロア回路、7・・・・・・ト
ランジスタ、8・・・・・・合成抵抗回路網、12,1
3,14.15・・・・・・抵抗。The figure is a circuit diagram of a channel selection device in an embodiment of the present invention. 1... Electronic tuner, 2... Variable capacitance diode, 3... Tuning voltage generation circuit, 4...
...Tuning selection circuit, 6...AFC detection circuit, 6
...Emitter follower circuit, 7...Transistor, 8...Composition resistance network, 12,1
3,14.15...Resistance.
Claims (1)
調電圧を発生する同調電圧発生回路と。 上記チューナの可変容量ダイオードに印加すべき自動周
波数制御用のAFC電圧を発生するAEC検波回路と、
上記AFC電圧が入力されエミッタもしくはソースから
AFC電圧を出力するエミッタフォロア回路もしくはソ
ースフォロア回路と。 上記同調電圧発生回路からの同調電圧と上記エミッタフ
ォロア回路もしくはソースフォロア回路からのAFC電
圧とを合成して上記チューナの可変容量ダイオードに印
加する合成抵抗とを備え・たことを特徴とする選局装置
。[Claims:] A tuning voltage generation circuit that generates a tuning voltage for tuning to be applied to a variable capacitance diode of a tuner. an AEC detection circuit that generates an AFC voltage for automatic frequency control to be applied to the variable capacitance diode of the tuner;
and an emitter follower circuit or source follower circuit that receives the AFC voltage and outputs the AFC voltage from the emitter or source. A channel selection characterized by comprising a composite resistor that combines the tuning voltage from the tuning voltage generation circuit and the AFC voltage from the emitter follower circuit or the source follower circuit and applies the resultant to the variable capacitance diode of the tuner. Device.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19752781A JPS5897917A (en) | 1981-12-07 | 1981-12-07 | Channel selecting device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19752781A JPS5897917A (en) | 1981-12-07 | 1981-12-07 | Channel selecting device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5897917A true JPS5897917A (en) | 1983-06-10 |
Family
ID=16375945
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP19752781A Pending JPS5897917A (en) | 1981-12-07 | 1981-12-07 | Channel selecting device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5897917A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59136053U (en) * | 1983-03-01 | 1984-09-11 | 大同工業株式会社 | belt |
US7732325B2 (en) | 2002-01-26 | 2010-06-08 | Applied Materials, Inc. | Plasma-enhanced cyclic layer deposition process for barrier layers |
-
1981
- 1981-12-07 JP JP19752781A patent/JPS5897917A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59136053U (en) * | 1983-03-01 | 1984-09-11 | 大同工業株式会社 | belt |
US7732325B2 (en) | 2002-01-26 | 2010-06-08 | Applied Materials, Inc. | Plasma-enhanced cyclic layer deposition process for barrier layers |
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