JPS5896761A - イオン注入抵抗およびその製造方法 - Google Patents

イオン注入抵抗およびその製造方法

Info

Publication number
JPS5896761A
JPS5896761A JP56195213A JP19521381A JPS5896761A JP S5896761 A JPS5896761 A JP S5896761A JP 56195213 A JP56195213 A JP 56195213A JP 19521381 A JP19521381 A JP 19521381A JP S5896761 A JPS5896761 A JP S5896761A
Authority
JP
Japan
Prior art keywords
type
layer
resistor
ion implantation
concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56195213A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6256668B2 (enrdf_load_stackoverflow
Inventor
Norihide Kinugasa
教英 衣笠
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp, Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electronics Corp
Priority to JP56195213A priority Critical patent/JPS5896761A/ja
Publication of JPS5896761A publication Critical patent/JPS5896761A/ja
Publication of JPS6256668B2 publication Critical patent/JPS6256668B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/43—Resistors having PN junctions

Landscapes

  • Semiconductor Integrated Circuits (AREA)
JP56195213A 1981-12-03 1981-12-03 イオン注入抵抗およびその製造方法 Granted JPS5896761A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56195213A JPS5896761A (ja) 1981-12-03 1981-12-03 イオン注入抵抗およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56195213A JPS5896761A (ja) 1981-12-03 1981-12-03 イオン注入抵抗およびその製造方法

Publications (2)

Publication Number Publication Date
JPS5896761A true JPS5896761A (ja) 1983-06-08
JPS6256668B2 JPS6256668B2 (enrdf_load_stackoverflow) 1987-11-26

Family

ID=16337336

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56195213A Granted JPS5896761A (ja) 1981-12-03 1981-12-03 イオン注入抵抗およびその製造方法

Country Status (1)

Country Link
JP (1) JPS5896761A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005114725A1 (ja) * 2004-05-21 2005-12-01 Omron Corporation 半導体抵抗素子及びその製造方法並びに半導体抵抗素子を用いた半導体装置

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6412879U (enrdf_load_stackoverflow) * 1987-07-14 1989-01-23
JPS6412877U (enrdf_load_stackoverflow) * 1987-07-14 1989-01-23

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
IEDM TECHNICAL DIGEST=1980 *
PHISICS AND TECHNOLOGY OF SEMICONDUCTOR DEVICES=1967 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005114725A1 (ja) * 2004-05-21 2005-12-01 Omron Corporation 半導体抵抗素子及びその製造方法並びに半導体抵抗素子を用いた半導体装置

Also Published As

Publication number Publication date
JPS6256668B2 (enrdf_load_stackoverflow) 1987-11-26

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