JPS5895873A - Amorphous silicon solar battery - Google Patents
Amorphous silicon solar batteryInfo
- Publication number
- JPS5895873A JPS5895873A JP56192731A JP19273181A JPS5895873A JP S5895873 A JPS5895873 A JP S5895873A JP 56192731 A JP56192731 A JP 56192731A JP 19273181 A JP19273181 A JP 19273181A JP S5895873 A JPS5895873 A JP S5895873A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- amorphous silicon
- hydrogen
- type
- long period
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 title claims abstract description 16
- 239000010410 layer Substances 0.000 claims abstract description 48
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000002344 surface layer Substances 0.000 claims abstract description 4
- 239000011241 protective layer Substances 0.000 claims description 15
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 14
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 13
- 239000001257 hydrogen Substances 0.000 abstract description 13
- 239000000758 substrate Substances 0.000 abstract description 7
- 229910003437 indium oxide Inorganic materials 0.000 abstract description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 abstract description 2
- 238000010030 laminating Methods 0.000 abstract description 2
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000006731 degradation reaction Methods 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 description 15
- 230000008020 evaporation Effects 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 229910052731 fluorine Inorganic materials 0.000 description 4
- 239000011737 fluorine Substances 0.000 description 4
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- -1 Hydrogen ions Chemical class 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 210000003608 fece Anatomy 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000003678 scratch resistant effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
Description
【発明の詳細な説明】
本発明は了モル７アスシリコン太陽電池に関するもので
ある。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a 7As silicon solar cell.
一般に太陽電池は、光の照射を受けてキャリアを発生す
る活性層（光電変換層）の受光面側に一方の電極となる
透明導電層を設け、他面側に他方の電極となる導電層を
、前記他方の電極を兼ねる−こともある基板上に設けて
構成されるが、前記活性層の材質としては、従前におい
て主として使用されてきた結晶シリコンに比して、結晶
成長工程が不要であってしかも容易に大面積で薄層状の
ものを有利に形成し得る利点、及び比較的大きな変（２
）
換効率が得られる利点を有することから、水素を含有す
るアモルファスシリコン（以下［ａ−８ｉ：ＨＪ ト％
紀す。）を用いることが研究されている。In general, solar cells have a transparent conductive layer that serves as one electrode on the light-receiving surface side of an active layer (photoelectric conversion layer) that generates carriers when irradiated with light, and a conductive layer that serves as the other electrode on the other surface. , which may also serve as the other electrode.However, the active layer is made of a material that does not require a crystal growth process, compared to crystalline silicon, which has been mainly used in the past. Moreover, it has the advantage of being able to easily form a thin layer over a large area, and with relatively large changes (2).
) Hydrogen-containing amorphous silicon (hereinafter referred to as [a-8i: HJ to%) has the advantage of obtaining high conversion efficiency.
I will teach you. ) is being studied.
然るに斯かる太陽電池においては、ａ−８ｉ：Ｈが非晶
質という安定性の小さなものであってその特性が繊細で
あり、従って良好な特性をし期間に亘って保有せしめる
ためには、基板とは反対側の表面を保護層によって保護
することが必要であり、従来においては酸化シリコン、
窒化シリコン、合成樹脂等より成る保護層が表層として
設けられる。However, in such solar cells, a-8i:H is amorphous and has low stability, and its characteristics are delicate. Therefore, in order to maintain good characteristics over a period of time, it is necessary to It is necessary to protect the surface on the opposite side with a protective layer, and conventionally, silicon oxide,
A protective layer made of silicon nitride, synthetic resin, etc. is provided as a surface layer.
しかしながらこれら従来の保護層は機械的曽度がそれ程
大きくなくて傷がつき易く、化学的或いは熱的な不安定
性が大きくて十分な保―作用を果たさず、従ってそのよ
うな保護層を有する太ｌｌ！電池においては、良好な特
性を長期間に亘って保有せしめることができない。この
欠点は、太ｌｉ！ｔｍ池が外気′に曝された状態で使用
されるときに特に顕著である。However, these conventional protective layers do not have a sufficient mechanical strength, are easily scratched, have high chemical or thermal instability, and do not provide sufficient protection. ll! Batteries cannot maintain good characteristics for a long period of time. This drawback is taili! This is particularly noticeable when the tm pond is used in a state where it is exposed to outside air.
本発明は以上の如き事情に基づいてなされたものであっ
て、良好な特性を長期間に亘って保有せ（８）
しめることができて使用寿命の長いアモルファスシリコ
ン太陽電池を提供することを目的とする。The present invention was made based on the above-mentioned circumstances, and an object thereof is to provide an amorphous silicon solar cell that can maintain good characteristics for a long period of time and has a long service life. shall be.
本発明の特徴とするところは、アモルファスシリコンよ
り成る活性層を有する太陽電池において、その表層とし
て水素を含有するアモルファスシリコンカーバイドより
成る保護層を有する点にある。The present invention is characterized in that a solar cell having an active layer made of amorphous silicon has a protective layer made of amorphous silicon carbide containing hydrogen as its surface layer.
以下図面によって本発明の一実施例について説明する。An embodiment of the present invention will be described below with reference to the drawings.
本発明においては、第１図に示すように、金−基＆ １
１上に例えば、各々ａ−８ｉ：Ｈより成るｐ型層１２ム
、ｉ型層１２Ｂ及びｎ型層１２０をこの順に積層せしめ
た構成の活性層１２を設け、この活・柱層１２上に例え
ばＩＴＯと称される酸化インジウムを主成分とする透明
導電層１８を設け、この透明導電層１８の表面を被着す
るよう、水素を３有するアモルファスシリコンカーバイ
ド（以下「ａ−８ｉ（３：ＨＪと記す。）より成る保護
層１４を形成して太陽電池を構成せしめる。In the present invention, as shown in FIG.
For example, an active layer 12 having a structure in which a p-type layer 12M, an i-type layer 12B, and an n-type layer 120 each made of a-8i:H are laminated in this order is provided on the active/column layer 12. For example, a transparent conductive layer 18 mainly composed of indium oxide called ITO is provided, and amorphous silicon carbide containing 3 hydrogen (hereinafter referred to as "a-8i (3:HJ ) is formed to constitute a solar cell.
本発明アモルファスシリコン太陽電池は以上のような構
成であるから、基板１１とは反対側の表ており、ａ−８
ｉＯ：Ｈは機械的催度か十分大きくて硬度は例えばヌー
プ硬度でＨＫ ２６００ ”９／−以上と大きく、従っ
て傷がつきに＜＜、又化学的に安定であって長期間に亘
って太陽光に曝されても劣化は極めて僅かであり、更に
熱に対しても大きな耐久性を有し、従って長期間に亘っ
て十分な保農作用を果す結果、前記活性層１２等におい
て得られる光電変換の良好な特性を長期間に亘って保有
せしめることができる。Since the amorphous silicon solar cell of the present invention has the above-described configuration, the a-8
iO:H has a sufficiently large mechanical hardness and hardness is, for example, HK 2600 9/- or more on the Knoop scale, so it is scratch resistant and chemically stable and can withstand sunlight for a long period of time. It exhibits very little deterioration even when exposed to light, and has great durability against heat, so it has a sufficient agricultural maintenance effect over a long period of time. Good conversion characteristics can be maintained for a long period of time.
そしてａ−８ｉＯ：Ｈはエネルギーギヤ′ノブかａ−８
ｉｉＨより大きいので、活性層１２において光電変換さ
れるべき波長の光が前記保護層１４において犠牲にされ
ることがないと共に、当該保護層１４とその下層である
透明導電層１８とによる干渉膜によって入射光の表向反
射を防止することが可能である。And a-8iO:H is the energy gear'knob or a-8
Since it is larger than iiH, the light of the wavelength to be photoelectrically converted in the active layer 12 is not sacrificed in the protective layer 14, and the interference film formed by the protective layer 14 and the transparent conductive layer 18 below it It is possible to prevent surface reflection of incident light.
以上において、前記基板１１はガラス板等の絶縁材より
成る基体に導電層を形成したものであってもよく、この
導電層が透明であればこの基体便よ（５）
り光を入射せしめるようにしてもよい。In the above, the substrate 11 may be formed by forming a conductive layer on a base made of an insulating material such as a glass plate, and if the conductive layer is transparent, it will allow light to enter through the base (5). You can also do this.
又本発明において、活性層は、光電変換機能を有するも
のであればその構成は任意であり、図示の例のようなｐ
−１−ｎ型構成のほか、ｐｎ接合型、ヘテロ接合型、シ
ョットキーバリア型等、ａ−８ｉ：Ｈを半導体層として
含む種々の構成とすることができる。そして活性Ｍ１２
がａ−８ｉ：Ｈより成り保護層１４がａ−３：ＬＯ：Ｈ
より成るため、製造装置の共用も可能であって有利に製
造することができる。Further, in the present invention, the active layer may have any structure as long as it has a photoelectric conversion function, and the active layer may have any structure as long as it has a photoelectric conversion function.
In addition to the -1-n type configuration, various configurations including a-8i:H as a semiconductor layer can be used, such as a pn junction type, a heterojunction type, and a Schottky barrier type. and active M12
is made of a-8i:H, and the protective layer 14 is made of a-3:LO:H.
Therefore, it is possible to share manufacturing equipment, and manufacturing can be carried out advantageously.
更に前記保護層１４のａ−８ｉ（３２Ｈにおける水素の
−ｋがフッ素に置換されていてもよく、この場合にはフ
ッ素を含有しない場合に比して、機械的強度、熱的耐久
性の向上が期待される。Furthermore, -k of hydrogen in a-8i (32H) of the protective layer 14 may be replaced with fluorine, and in this case, mechanical strength and thermal durability are improved compared to the case where fluorine is not contained. There is expected.
前記保験Ｎ１１４の形成にはグロー放電法、スパッタ法
、その他従来公知の方法も利用することができるが、次
のような方法により有利に製造することができる。即ち
第２図に示すように、ペルジャー１内に蒸着基＆４を配
置し、前記ペルジャー１内にはこれに接綬した水素ガス
放電管７において水素ガスの放電によって得られた活性
水素及び（６）
水素イオンを導入し、これらの存在下において、シリコ
ン蒸発源８及び炭素蒸発源９を１７０熱して蒸発せしめ
、以って蒸着基板４にａ−８ｉＯ：Ｈを堆積せしめる。Although a glow discharge method, a sputtering method, and other conventionally known methods can be used to form the guarantee N114, it can be advantageously manufactured by the following method. That is, as shown in FIG. 2, a vapor deposition group &4 is arranged in a Pel jar 1, and active hydrogen and (6 ) Hydrogen ions are introduced, and in their presence, the silicon evaporation source 8 and the carbon evaporation source 9 are heated for 170 ℃ to evaporate them, thereby depositing a-8iO:H on the evaporation substrate 4.
８はバタフライバルブ２を有する排気路、５は蒸着基板
４のヒーター、６は直流電源、Ｓ、Ｓはシャッターであ
る。8 is an exhaust path having a butterfly valve 2, 5 is a heater for the deposition substrate 4, 6 is a DC power supply, and S and S are shutters.
斯かる蒸着法によれば、シリコン蒸発源８及び炭素蒸発
源９の蒸発速度の制御、導入される活性水素及び水素イ
オンの状態及び童の制御格が可能であって大きな自由度
を有する条件下でａ−８ｉＯ：Ｈが形成されるため、含
有される水素の割合を十分に制御することができて十分
な保ｗｋ機能を有する保護層を形成し得ると共に、製膜
速度を大きくすることが容易であり、大面積の蒸着膜の
形成が容易であるので実用上極めて有利である。そして
水素ガス放電管フに水素とフッ素との混合ガスを供給す
ることによって、フッ素を含有するａ−８ｉＯ：Ｈを形
成することができる。According to such a vapor deposition method, it is possible to control the evaporation rates of the silicon evaporation source 8 and the carbon evaporation source 9, and to control the state of the introduced active hydrogen and hydrogen ions, and the conditions can be achieved with a large degree of freedom. Since a-8iO:H is formed in this process, the proportion of hydrogen contained can be sufficiently controlled, a protective layer having sufficient wk retention function can be formed, and the film forming rate can be increased. It is easy to form a deposited film over a large area, so it is extremely advantageous in practice. By supplying a mixed gas of hydrogen and fluorine to the hydrogen gas discharge tube, a-8iO:H containing fluorine can be formed.
更に上述の如き方法によれば、活性層１２を構成するａ
−８ｉ：Ｈの形成を、保護層１４の形成に用（フ ）
いられる装置を用いて行なうことも可能である。Further, according to the method as described above, the a constituting the active layer 12
It is also possible to form -8i:H using the equipment used for forming the protective layer 14.
即ちこの場合には炭素蒸発源９を加熱しなければａ−８
ｉ：Ｈが形成され、同時に周期律表第■族又は第Ｖ族元
素のドープ削を共蒸着せしめることにより、ｐ型又はｎ
型のａＪｉ：Ｈの形成を行なうことができる。例えば第
１図の構成の活性層１２を得るためには、金幌板より成
る蒸着基板４を用い、既述のように、ペルジャー１内に
活性水素及び水素イオンを導入しながら、先ずシリコン
の蒸着と共にアルミニウムを蒸着せしめることによりｐ
型層１２ムが形成され、次いでシリ、フンの蒸着のみを
行なうことによってｉ型層１２Ｂが形成され、その後ア
ンチモンをシリコンと共に蒸着せしめることによってｎ
型層１２Ｇが形成される。そして一旦ペルシャ−１から
取り出して透明導電層１８の形成を行なった後、同一の
装置を用い上述した方法によって保論Ｍ１４を形成子れ
ばよい。That is, in this case, if the carbon evaporation source 9 is not heated, a-8
i:H is formed, and at the same time, by co-evaporating a dope of a group Ⅰ or group V element of the periodic table, p-type or n
Formation of type aJi:H can be performed. For example, in order to obtain the active layer 12 having the structure shown in FIG. By evaporating aluminum along with evaporation, p
A type layer 12M is formed, then an i-type layer 12B is formed by only evaporating silica and dung, and then an n-type layer 12B is formed by evaporating antimony together with silicon.
A mold layer 12G is formed. After the transparent conductive layer 18 is formed once removed from the Persia-1, a mold M14 may be formed using the same apparatus and the method described above.
尚前記保護層１４の厚さは１０λ〜１０μ、好ましくは
６０λ〜１μである。The thickness of the protective layer 14 is 10λ to 10μ, preferably 60λ to 1μ.
以下本発明アモルファスシリコン太陽を池につ＃１１図
の構成に従い、ステンレス鋼より成る金楓基板上に各＊
ａ−８ｉ：Ｈより成る、厚さ５００λのｐ型層、厚さ
５０００λのｉ型層及び厚さ１０００人のｎ型層を積層
して活性層を形成し、この活性層上に厚さ７００人のＩ
ＴＯ透明導曹膜を形成し、更に水素を除外してその組成
をＳｉよ−ｘＣｘで表わしたときのＸの値が０．８５の
ａ−９ｉＣ：Ｈを既述の蒸漬法によって形成して厚さ５
０００人の保護層を設けて本発明アモルファスシリコン
太陽電池を製最した。この太陽電池に対してエアマス１
の光を連続して照射したところ、初期の変換効率は５．
３％、屋外（東京都日野市さくら町１番地）において昭
和５６年４月から同年１０月にかけて２４８日間放置し
た後の変換効率は５．０％であり、特性の劣化は修かで
あった。Hereinafter, the amorphous silicon solar cell of the present invention was placed on a substrate #11 according to the structure shown in Figure 1, and each *
a-8i: An active layer is formed by laminating a p-type layer with a thickness of 500λ, an i-type layer with a thickness of 5000λ, and an n-type layer with a thickness of 1000μ, which are made of H, and a layer with a thickness of 700λ is formed on this active layer. person's I
A TO transparent carbon dioxide film was formed, and a-9iC:H whose composition was expressed as Si-xCx by excluding hydrogen and having an X value of 0.85 was formed by the above-mentioned evaporation method. Thickness 5
The amorphous silicon solar cell of the present invention was manufactured by providing a protective layer of 1,000 yen. Air mass 1 for this solar cell
When continuously irradiated with light, the initial conversion efficiency was 5.
3%, and the conversion efficiency was 5.0% after being left outdoors (1 Sakuracho, Hino City, Tokyo) for 248 days from April 1980 to October of the same year, and the deterioration of characteristics was not repaired. .
これに対し、保護層として厚さ５０００人の酸化シリコ
ン膜を設けた他は全く同様にして製造した太陽電池につ
いて同様の光照射を行なったところ、初期の変換効率は
５．８％であったが、上述と（９）
全く同様にして２４８日間厘外に放置した後の変換効率
は８．１％と特性が大幅に劣化した。On the other hand, when a solar cell manufactured in the same manner except that a 5,000-layer silicon oxide film was provided as a protective layer was irradiated with light in the same manner, the initial conversion efficiency was 5.8%. However, in the same manner as described above (9), after being left outside for 248 days, the conversion efficiency was 8.1%, which significantly deteriorated the characteristics.
以上のように本発明によれば、良好な特性を長期間に亘
って保有せしめることができて使用寿命ノ長いアモルフ
ァスシリコン太Ｆａ１を池を提供することができる。As described above, according to the present invention, it is possible to provide an amorphous silicon material that can maintain good properties for a long period of time and has a long service life.
第１図は°本発明アモルファスシリコン太陽電池の一実
施例の説明図、第２図は保護層の形成に好適に用いられ
る装置の説明用断面図である。
ｌ・・・ペルジャー ２・・・バタフライバルブ
８・・・排気路 ４・・・蒸着基板フ・・、
水素ガス放電管 ８・・・シリコン蒸発源９・・・炭
素蒸発源 １１・・・基板１２・・・活性層
１８・・、透明導電層１４・・・保１ＭＰＩｊFIG. 1 is an explanatory view of one embodiment of the amorphous silicon solar cell of the present invention, and FIG. 2 is an explanatory cross-sectional view of an apparatus suitably used for forming a protective layer. l... Pelger 2... Butterfly valve 8... Exhaust path 4... Vapor deposition substrate...
Hydrogen gas discharge tube 8... Silicon evaporation source 9... Carbon evaporation source 11... Substrate 12... Active layer
18..., transparent conductive layer 14...1MPIj
Claims (1)
陽電池において、その表層として水素を６有するアモル
ファスシリコンカーバイドより成る保護層を有すること
を特徴とするアモル７ア゛スシリコン太ｓｔ池。l) A solar cell having an active layer made of amorphous silicon, characterized in that it has a protective layer made of amorphous silicon carbide having 6 hydrogen atoms as its surface layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56192731A JPS5895873A (en) | 1981-12-02 | 1981-12-02 | Amorphous silicon solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56192731A JPS5895873A (en) | 1981-12-02 | 1981-12-02 | Amorphous silicon solar battery |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5895873A true JPS5895873A (en) | 1983-06-07 |
Family
ID=16296123
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56192731A Pending JPS5895873A (en) | 1981-12-02 | 1981-12-02 | Amorphous silicon solar battery |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5895873A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63179583A (en) * | 1987-01-08 | 1988-07-23 | インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン | Semiconductor optoelectric transducer |
| JP2009099986A (en) * | 2007-10-12 | 2009-05-07 | Air Products & Chemicals Inc | Antireflection coating for use in photovoltaic cell |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS554040A (en) * | 1978-06-26 | 1980-01-12 | Hitachi Ltd | Photoconductive material |
| JPS55127083A (en) * | 1979-03-26 | 1980-10-01 | Matsushita Electric Ind Co Ltd | Semiconductor element |
-
1981
- 1981-12-02 JP JP56192731A patent/JPS5895873A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS554040A (en) * | 1978-06-26 | 1980-01-12 | Hitachi Ltd | Photoconductive material |
| JPS55127083A (en) * | 1979-03-26 | 1980-10-01 | Matsushita Electric Ind Co Ltd | Semiconductor element |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63179583A (en) * | 1987-01-08 | 1988-07-23 | インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン | Semiconductor optoelectric transducer |
| JP2009099986A (en) * | 2007-10-12 | 2009-05-07 | Air Products & Chemicals Inc | Antireflection coating for use in photovoltaic cell |
| US8987039B2 (en) | 2007-10-12 | 2015-03-24 | Air Products And Chemicals, Inc. | Antireflective coatings for photovoltaic applications |
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