JPS5894147A - Optical memory medium - Google Patents
Optical memory mediumInfo
- Publication number
- JPS5894147A JPS5894147A JP56193921A JP19392181A JPS5894147A JP S5894147 A JPS5894147 A JP S5894147A JP 56193921 A JP56193921 A JP 56193921A JP 19392181 A JP19392181 A JP 19392181A JP S5894147 A JPS5894147 A JP S5894147A
- Authority
- JP
- Japan
- Prior art keywords
- melting point
- layer
- recording layer
- alloy
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B7/2433—Metals or elements of groups 13, 14, 15 or 16 of the Periodic System, e.g. B, Si, Ge, As, Sb, Bi, Se or Te
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24304—Metals or metalloids group 2 or 12 elements (e.g. Be, Ca, Mg, Zn, Cd)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24312—Metals or metalloids group 14 elements (e.g. Si, Ge, Sn)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24314—Metals or metalloids group 15 elements (e.g. Sb, Bi)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/258—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers
- G11B7/2585—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers based on aluminium
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
- Read Only Memory (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は光学的に情報を記録、再生する高密度の光学的
メモリ装置に適用し得る高感度の光学的メモリ媒体に関
する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a highly sensitive optical memory medium that can be applied to high-density optical memory devices that optically record and reproduce information.
従来、この墓の光学的メモリ媒体としては、ガラスまた
はプラスチック基体上に記録層として偶えばＢ ｉ ＊
Ｔ ｅなどの金属薄膜層を形成し、集束レーザ光によ
る溶融蒸発を原理とした凹部（ビット）を形成して情報
を記録する方式のものが使用されてきた。しかしながら
、このような金属薄膜記録層は一般に溶融点が比較的高
（、例えばＢｉで２７１℃、Ｔｅで４５０℃であること
が原因となり記録感度が低く、そのため記録するのに大
出力レーザ装置が必要であった。また多（の金属薄膜の
場合、レーザビーム照射で生成された凹部の周辺部の形
状がぎざぎざ形になったり残液が除去されずに残ったり
し易（、情報再生時における信号対雑音比（Ｓ／Ｎ比）
を低下させるという、欠点があった。Traditionally, optical memory media of this kind have been prepared using B i * as a recording layer on a glass or plastic substrate.
A method has been used in which information is recorded by forming a metal thin film layer such as Te, and forming recesses (bits) based on the principle of melting and evaporation using focused laser light. However, such metal thin film recording layers generally have relatively high melting points (e.g., 271°C for Bi and 450°C for Te), resulting in low recording sensitivity, and therefore require a high-output laser device to record. In addition, in the case of multilayer metal thin films, the shape of the periphery of the recesses created by laser beam irradiation tends to become jagged, and residual liquid tends to remain without being removed. Signal-to-noise ratio (S/N ratio)
It had the disadvantage of lowering the
本発明はこのよ゛うな現状に鑑みて為されたものであり
、その目的は従来技術の欠点を解消し、金属薄膜記録層
および低融点合金層からなる高感度の光学的メモリ媒体
を提供することである。本発明の光学的メモリ媒体はガ
ラスまたはプラスチッり基体およびその上に形成された
低融点合金層、さらにその上に形成された金属薄膜記録
層とからなり、レーザビームを岨射することによりこの
金属薄膜記録層および低融点合金層に同時に凹部を形成
することにより情報を記録し、かつ情報を再生し得るも
のであり、本発明の特長は比較的低いエネルギー密度の
レーザビームで高いＳ／Ｎ比の情報記録り生が得られる
ことである。すなわち、レーザビーム焦射で上記低融点
合金層が溶融蒸発した際、この溶融部は表面張力により
凝集、収縮し、凹部の周辺部が円形状になり易い性質を
利用することにより、同時に溶融蒸発した金属薄膜記録
層の凹部の形状がたとえぎざぎざ、形の不完全な形状で
あっても、また残渣が残ってもこの低融点合金層の上記
性質によって完全な円形状に修正されるために高いＳ／
Ｎ比が得られるものである。The present invention has been made in view of the current situation, and its purpose is to eliminate the drawbacks of the prior art and provide a highly sensitive optical memory medium comprising a metal thin film recording layer and a low melting point alloy layer. That's true. The optical memory medium of the present invention consists of a glass or plastic substrate, a low melting point alloy layer formed thereon, and a metal thin film recording layer formed thereon. By simultaneously forming recesses in a thin film recording layer and a low melting point alloy layer, information can be recorded and reproduced.The feature of the present invention is that it can achieve a high S/N ratio with a laser beam of relatively low energy density. information records can be obtained. In other words, when the low melting point alloy layer is melted and evaporated by laser beam focusing, this molten part coagulates and contracts due to surface tension, and by utilizing the property that the peripheral part of the recess tends to become circular, it is possible to simultaneously melt and evaporate it. Even if the shape of the concave part of the metal thin film recording layer is jagged or imperfect, or even if a residue remains, the above properties of the low melting point alloy layer will correct it to a perfect circular shape. S/
The N ratio can be obtained.
本発明における低融点合金層の融点は使用される金属薄
膜記録層の融点よりも低いことが必要であり、逆の場合
は本発明の効果は発生しない。さらに本発明における低
融点合金層の組成はＳ ｎ ＊ Ｂ Ｉ 。The melting point of the low melting point alloy layer in the present invention must be lower than the melting point of the metal thin film recording layer used; in the opposite case, the effects of the present invention will not occur. Furthermore, the composition of the low melting point alloy layer in the present invention is S n *B I .
Ｐｂ、Ｃｄの内の２種以上の組合せからなり、必要溶融
温度により成分、組成を適宜選択することができ、例え
ば１′Ｌ６％Ｓｎ −５０，Ｏ％Ｂｉ −２５，０％Ｐ
ｂ−１１５％Ｃｄ合金は溶融湿度が６０〜７２℃、１８
．０％５ｎ−５２，０％Ｂ１−１１１０５％Ｐｂ合金は
溶融温度が９５°Ｃ，４５，０％５ｎ−５，０５％Ｂｉ
−８２，０％Ｐｂ −１８，０５％Ｃｄ合金は溶融温
度が１８２〜１８９℃、４８．０％５ｎ−１４，０％Ｂ
１−４８．０５％Ｐｂ合金は溶融温度が１４８〜１６８
°Ｃである。これらの低融点合金はアルミニウム薄膜な
どを反射膜として真空蒸着させた基板上に真空蒸着また
はスパッタリングなどにより容易に形成することができ
、通常その膜厚は６０〜８００Ｊ１１１で効果を発揮す
ることができる。なおこの低融点合金はアルミニウム反
射族と融点が着しるしく異なるため合金化することはな
い。金属薄膜記録層の金属は特に限定されず、例えばＶ
族のＡｓ、Ｓｂ、Ｂｔｓ ｗ族のＳｅ＊Ｔｅ元素やその
合金などが適用され、基板上に形成された低融点合金層
の上に真空蒸着法やスパッタリング法などにより容易に
形成することができ、通常その膜厚は５０〜２００−程
度である。次に本発明の実施の一部における光学的メモ
リ媒体の構成およびそれによる情報の記録、−再生操作
を図面により説明する。It is composed of a combination of two or more of Pb and Cd, and the components and composition can be appropriately selected depending on the required melting temperature. For example, 1'L6%Sn -50,O%Bi -25,0%P
b-115%Cd alloy has a melting humidity of 60-72℃, 18
．． 0%5n-52,0%B1-11105%Pb alloy has a melting temperature of 95°C, 45,0%5n-5,05%Bi
-82,0%Pb -18,05%Cd alloy has a melting temperature of 182-189℃, 48.0%5n-14,0%B
1-48.05% Pb alloy has a melting temperature of 148-168
It is °C. These low-melting point alloys can be easily formed by vacuum evaporation or sputtering on a substrate on which a thin aluminum film or the like is vacuum-deposited as a reflective film, and can usually be effective at a film thickness of 60 to 800J111. . Note that this low melting point alloy has a significantly different melting point from that of reflective aluminum, so it is not alloyed. The metal of the metal thin film recording layer is not particularly limited, and for example, V
As, Sb, Bts, Se*Te elements of the W group, and their alloys are applied, and they can be easily formed on a low melting point alloy layer formed on a substrate by vacuum evaporation or sputtering. The film thickness is usually about 50 to 200 mm. Next, the configuration of an optical memory medium and the information recording and reproducing operations thereof will be explained with reference to the drawings in a part of the implementation of the present invention.
ｌ１ｌ−は本発明の光学的メモリ媒体を用いた記録、再
生工程の一具体例を示した系統図であり、第２図は第１
図における記録後の光学的メモリ媒体の一部を示した拡
大ｌｌ１ｉｉＩ内である。図において（ｔ） １．を基
体、０）は反射膜、（３）は低融点合金層、（４）は金
属薄膜記録層、（５）は回転装置、（６）はレーザ、（
７）は光変調器、（８）は偏光ビームスプリッタ、（９
）は対物レンズ、（至）は光検出器、（ロ）は記録部と
なる凹部、（２）は未記録部を示す。前記基体＋１３は
ガラスまたはポリメチルメタアクリレートのようなプラ
スチック製の直径約８０１の円板であり、その片面に反
射Ｍ（！）として膜厚的１０６ ｎｍのアルミニウム薄
膜を真空蒸着により形成し、その上に膜厚５ｏ〜１１０
０ｎの低融点合金層（３）をスパッタリングし、さらに
その上に膜厚的５０”１１００ｎの金属薄膜よりなる記
録層（４）を真空蒸着またはスパッタリング法により形
成する。このようにして作製した光学的メモリ媒体を回
転装置（Ｓ）に装着して回転させながら記録、再生が行
なわれる。記録は先ずレーザ（句からのレーザ光を光度
ｗ４器（７）により度胸して情報を持った光とし、偏光
ビームスプリッタ（８）および対物レンズ（９）により
集束されたレーザ光のビーム径は約１μｍであり、その
熱作用により記録層（４）の金属薄膜および低融点合金
層（３）は溶融蒸発し、その結果第２図に示すような凹
部（ロ）が形成され情報が記−される。記録された情報
の再生はレーザ（６）におけるレーザ光の出力を記録時
の約１／１０ Ｎ度にし、すなわち記録層（４）の未記
録部（２）を溶融蒸発させない程度の出力に下げ凹部（
ロ）と未記録ｓ斡の反射率の違いにより光検出器叫で電
気信号に変換して情報が再生される。l1l- is a system diagram showing a specific example of the recording and reproducing process using the optical memory medium of the present invention, and FIG.
It is in the enlarged ll1iii that shows a part of the optical memory medium after recording in the figure. In the figure (t) 1. is the substrate, 0) is the reflective film, (3) is the low melting point alloy layer, (4) is the metal thin film recording layer, (5) is the rotating device, (6) is the laser, (
7) is an optical modulator, (8) is a polarizing beam splitter, (9
) is the objective lens, (to) is the photodetector, (b) is the concave portion that becomes the recording portion, and (2) is the unrecorded portion. The substrate +13 is a circular plate made of glass or plastic such as polymethyl methacrylate and has a diameter of about 801 mm.A thin aluminum film with a thickness of 106 nm is formed on one side of the substrate as a reflection M (!) by vacuum evaporation. Film thickness on top 5o~110
A low melting point alloy layer (3) of 0n is sputtered, and a recording layer (4) made of a metal thin film with a thickness of 50" and 1100n is formed thereon by vacuum evaporation or sputtering. Recording and playback are performed while the target memory medium is attached to a rotating device (S) and rotated.Recording is performed by first converting the laser beam from a laser beam into information-carrying light using a luminous intensity W4 device (7). The beam diameter of the laser beam focused by the polarizing beam splitter (8) and the objective lens (9) is approximately 1 μm, and the metal thin film of the recording layer (4) and the low melting point alloy layer (3) are melted by its thermal action. As a result, a concave portion (b) as shown in Fig. 2 is formed and information is recorded.The recorded information is reproduced by reducing the output of the laser beam from the laser (6) to about 1/10 of the recording time. N degrees, that is, lower the output to an extent that does not melt and evaporate the unrecorded part (2) of the recording layer (4).
(b) Due to the difference in reflectance between the unrecorded signal and the unrecorded signal, the information is reproduced by converting it into an electrical signal using a photodetector.
次に本発明の具体実施例を説明する。Next, specific embodiments of the present invention will be described.
実施例１゜
金属薄膜記録層（４）として、？ ０．（１％Ｓｅ −
ＪＩＯ，０％Ｔｅ（融点２９０″Ｃ）を膜厚１１００ｎ
に真空蒸着し、低融点合金１１ｔ（３）としてｔｏ、ｏ
５％５ｎ−５１０％Ｂ１−４２．０％Ｐｂ合金（溶融温
度９５℃）を膜厚１１００ｎにスパッタリングし、第１
図で説明した方法により光学的メモリ媒体を作製し、出
力１５ｍＷのＨｅ −Ｎｅレーザ光にてカラービデオ信
号の記録、再生を行なった結果、Ｓ／Ｎ比４６ｄＢ以上
の良好な再生画像品質が得られた。Example 1 As the metal thin film recording layer (4), ? 0. (1% Se −
JIO, 0% Te (melting point 290″C) film thickness 1100n
to and o as low melting point alloy 11t(3).
A 5%5n-510%B1-42.0%Pb alloy (melting temperature 95°C) was sputtered to a film thickness of 1100n.
An optical memory medium was prepared using the method explained in the figure, and a color video signal was recorded and played back using a He-Ne laser beam with an output of 15 mW. As a result, good playback image quality with an S/N ratio of 46 dB or more was obtained. It was done.
実施例２
金属薄膜記録層（４）として５０．０％Ａｓ−５０，０
％Ｔｅ（融点８６８℃）を膜厚５０ｎｍにスパッタリン
グし、低融点合金層（３）として１２．５％５ｎ−５０
，０％Ｂ１−４６．０％Ｐｂ−１２−５％Ｃｄ合金（溶
融温度６０〜７２°Ｃ）を膜厚１１００ｎにスパッタリ
ングした以外は実施例１と同様の操作により光学的メモ
リ媒体の作製および記録、再生を行なったところ、実施
例１と略同等の結果を得ることができた。Example 2 50.0% As-50.0 as metal thin film recording layer (4)
%Te (melting point 868°C) was sputtered to a film thickness of 50 nm to form a low melting point alloy layer (3) of 12.5% 5n-50.
, 0%B1-46.0%Pb-12-5%Cd alloy (melting temperature 60-72°C) was sputtered to a film thickness of 1100n, but the same procedure as in Example 1 was used to fabricate an optical memory medium. When recording and reproducing were performed, substantially the same results as in Example 1 could be obtained.
実施例８゜
金属薄膜記録層（４）として８０．０％５ｂ−７０，０
％Ｂｉ（融点４００℃）を膜厚４０ｎｍにスパッタリン
グし、低融点合金層（３）として４５．０％Ｓ ｎ −
５，０％Ｂｉ −５ｔＯ％Ｐ ｂ −１８，０％Ｃｄ合
金（＃ＩＷ！Ａ温度１８２〜１８９℃）を膜ＩＬ５０！
１１！１にスパッタリングした以外は実施例１と同様の
操作により光学的メモリ媒体の作製および記録、再生を
行なったところ実施＠１と略同等の結果を得ることがで
きた。Example 8 80.0% 5b-70,0 as metal thin film recording layer (4)
%Bi (melting point 400°C) was sputtered to a film thickness of 40 nm to form a low melting point alloy layer (3) of 45.0%S n −
5,0%Bi-5tO%Pb-18,0%Cd alloy (#IW!A temperature 182-189°C) was used as a film IL50!
When an optical memory medium was prepared, recorded, and reproduced in the same manner as in Example 1 except that sputtering was carried out at 11!1, substantially the same results as in Example 1 could be obtained.
以上説明したように本発明の光学的メモリ媒体は、金属
薄膜記録層およびこの金属薄膜記録層の溶融温度以下の
溶融温度を持つ低融点合金層との複合膜にすることによ
り、低いレーザ出力で情報の記録、再生時のＳ／Ｎ比を
著しるしく向上させ、高感度にし得、その結果各種メモ
リ装置の価格を廉価にし得る利点を有するものである。As explained above, the optical memory medium of the present invention can be used with low laser output by forming a composite film of a metal thin film recording layer and a low melting point alloy layer having a melting temperature lower than the melting temperature of the metal thin film recording layer. This has the advantage that the S/N ratio during information recording and reproduction can be significantly improved and sensitivity can be increased, and as a result, the price of various memory devices can be reduced.
図面は本発明の実施の一部を示すもので、第１図は光学
的メモリ媒体を用いた記録、再生工程の系統図、第２図
は第１図における記録後の光学的メモリ媒体の一部を示
した拡大断面図である。
（１）・・・基体、（２）・・・反射膜、（３）−・低
融点合金層、（４）・−金属ｍ膜記録膚、（ロ）・・・
凹部、（２）−未記録部、代理人 森本義弘The drawings show a part of the implementation of the present invention; FIG. 1 is a system diagram of the recording and reproducing process using an optical memory medium, and FIG. 2 is a diagram showing one part of the optical memory medium after recording in FIG. 1. FIG. (1)...Substrate, (2)...Reflective film, (3)--Low melting point alloy layer, (4)--Metal m film recording skin, (B)...
Concave part, (2) - unrecorded part, agent Yoshihiro Morimoto
Claims (1)
さらｋその上に形成された金属薄膜記録層とから構成さ
れ、レーザ光を照射することにより前記金属薄膜記録層
および低融点合金履修ζ同時に凹部を形成し情報を記録
するようにした光学的メモリ媒体。 １ 低融点合金層の組成はＳｎ ｅ Ｂ ｉ ｅ Ｐ
ｂ 、Ｃｄ ＃の内の少なくとも２１１類以上を組合せ
た合金より成る特許請求の範囲第１項記載の光学的メモ
リ媒体。 ｔ ａｉｍ点合金合金層融温度は金属薄膜記録層の溶
融蒸発温度以下である特許請求の範囲第１項記載の光学
的メモリ媒体。[Claims] L: a base body, a low melting point alloy layer formed on the base body,
and a metal thin film recording layer formed thereon, wherein the metal thin film recording layer and the low melting point alloy are irradiated with laser light to simultaneously form recesses and record information. Medium. 1 The composition of the low melting point alloy layer is Sn e B i e P
2. The optical memory medium according to claim 1, which is made of an alloy that is a combination of at least 211 or more of Cd #b and Cd #. 2. The optical memory medium according to claim 1, wherein the melting temperature of the alloy layer at the t aim point is lower than the melting and evaporation temperature of the metal thin film recording layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56193921A JPS5894147A (en) | 1981-12-01 | 1981-12-01 | Optical memory medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56193921A JPS5894147A (en) | 1981-12-01 | 1981-12-01 | Optical memory medium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5894147A true JPS5894147A (en) | 1983-06-04 |
Family
ID=16315950
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56193921A Pending JPS5894147A (en) | 1981-12-01 | 1981-12-01 | Optical memory medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5894147A (en) |
-
1981
- 1981-12-01 JP JP56193921A patent/JPS5894147A/en active Pending
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