JPS589364A - Manufacture of solid state color image pickup device - Google Patents
Manufacture of solid state color image pickup deviceInfo
- Publication number
- JPS589364A JPS589364A JP56107477A JP10747781A JPS589364A JP S589364 A JPS589364 A JP S589364A JP 56107477 A JP56107477 A JP 56107477A JP 10747781 A JP10747781 A JP 10747781A JP S589364 A JPS589364 A JP S589364A
- Authority
- JP
- Japan
- Prior art keywords
- film
- bonding
- color separation
- passivation film
- openings
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000007787 solid Substances 0.000 title abstract 2
- 238000000926 separation method Methods 0.000 claims abstract description 31
- 238000002161 passivation Methods 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 16
- 238000005530 etching Methods 0.000 claims abstract description 7
- 238000003384 imaging method Methods 0.000 claims description 14
- 239000011229 interlayer Substances 0.000 abstract description 6
- 239000000758 substrate Substances 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 14
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 239000002904 solvent Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000003628 erosive effect Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000005360 phosphosilicate glass Substances 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000003086 colorant Substances 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000004040 coloring Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000005357 flat glass Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 150000003377 silicon compounds Chemical class 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 108010010803 Gelatin Proteins 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 229920000159 gelatin Polymers 0.000 description 1
- 239000008273 gelatin Substances 0.000 description 1
- 235000019322 gelatine Nutrition 0.000 description 1
- 235000011852 gelatine desserts Nutrition 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 229910000108 silver(I,III) oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
Abstract
Description
【発明の詳細な説明】
本発明は、カラー用固体撮像装置の製造方法に関し、特
に固体撮像素子上に直接的に色分離フィルタを形成した
カラー用固体撮像装置の製造方法に係わる。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of manufacturing a color solid-state imaging device, and more particularly to a method of manufacturing a color solid-state imaging device in which a color separation filter is directly formed on a solid-state imaging device.
従来、ＣＣＤ用固体操像素像素子上接的に色分離フィル
タを形成したカラー用固体撮像装置としでは、第１図に
示すものが知られている。2. Description of the Related Art Conventionally, as a color solid-state imaging device in which a color separation filter is formed above a solid-state image element for a CCD, the one shown in FIG. 1 is known.
図中１は、内部が階段状の凹部を有するセラミックパッ
ケージである。このパッケージ１の内部底面上には、導
電性の接着剤２を介して固体撮像素子３がマウントされ
、これにより図示しないダイギタッチ部に接続されてい
る。この素子３の上面（受光面）の中央には色分離フィ
ルタ４が形成され、該フィルタ４の周辺には複数のボン
ディング・パッド部５″・・・が露出して形成されてい
る。このボンディング・パッド部５′・・・は、アルミ
ニウム又は金等のボンディング・ワイヤ６・・・を介し
てパッケージ１内の平坦な階段に設けられたボスト部７
に接続され、かつこのポスト部７はパッケージ１の外部
に取り付けられた端子（図示せず）にスルホール等を介
して接続されている。更に、パッケージ１の開口端には
、前記素子３を気密に封止するための光学窓ガラス体８
が封止材９を介して固定されているＯ
ところで、上記固体撮像装置において、固体撮像素子と
色分離フィルタからなるＣＣＤチップは、固体撮像素子
上に色分離フィルタを直接形成するとともに、ワイヤ・
ボンディングのためにボンディング・パッド部が露出し
ている必要があり、従来その製造は次のようにして行な
われている。まず、シリコンウェハ上に通常のウェハプ
ロセスである気相成長、不純物拡散、写真蝕刻等により
固体撮像素子を形成し、次に前記各素子上に適宜にＡ１
等の金属を蒸着し、写真゛蝕刻番こより、シリコン基板
とのコンタクトやボンディング・パッドを形成する。次
いで、ウェハ全体にパッシベーション膜を形成する。In the figure, 1 is a ceramic package that has a stepped recess inside. A solid-state image sensor 3 is mounted on the inner bottom surface of this package 1 via a conductive adhesive 2, and is thereby connected to a DaigiTouch section (not shown). A color separation filter 4 is formed at the center of the upper surface (light receiving surface) of this element 3, and a plurality of bonding pad portions 5'' are formed exposed around the filter 4.・The pad portion 5'... is connected to the boss portion 7 provided on a flat staircase inside the package 1 via a bonding wire 6... such as aluminum or gold.
The post portion 7 is connected to a terminal (not shown) attached to the outside of the package 1 via a through hole or the like. Furthermore, an optical window glass body 8 is provided at the open end of the package 1 for airtightly sealing the element 3.
By the way, in the above-mentioned solid-state imaging device, the CCD chip consisting of the solid-state imaging element and the color separation filter forms the color separation filter directly on the solid-state imaging element, and the wire
The bonding pad portion must be exposed for bonding, and its manufacture has conventionally been carried out as follows. First, a solid-state image sensing device is formed on a silicon wafer by a normal wafer process such as vapor phase growth, impurity diffusion, photolithography, etc., and then A1 is appropriately placed on each of the devices.
A metal such as the like is vapor-deposited, and contacts and bonding pads with the silicon substrate are formed by photoetching. Next, a passivation film is formed over the entire wafer.
この後、該パッシベーション膜の一部を選択的にエツチ
ングしてボンディング・パッド部を露出させる。以上の
ような工程の後、色分離フィルタを素子上に形成し、最
後にダイシング・ラインに沿って各素子を割断してＣＣ
Ｄチップを造る。Thereafter, a portion of the passivation film is selectively etched to expose the bonding pad portion. After the above steps, color separation filters are formed on the elements, and finally each element is cut along the dicing line to perform CC processing.
Make D-chip.
しかしながら、上述した方法にあっては、色分離フィル
タの形成に際して、露出するボンディング・パッド部上
のフィルタ形成被膜をアルカリ系の溶剤で処理するため
、ボンディング・パッド部が該アルカリ系の溶剤で洗わ
れて侵食されたり、或いはフィルタ形成被膜の成分材料
がボンディング・パッド部上に残り、汚染されたりして
、ボンディング・ワイヤとのボンディング性が悪化する
という欠点があった。また、ボンディング・パッド部上
のパッシベーション膜に該バット、部を露出させる穴が
おいているため、色分離フィルタを形成時ボンディング
・パッド部近辺の色分離フィルタは、ＣＣＤチップの中
心部のフィルタに対して落ち込み、該フィルタの厚みを
均一にできず、ＣＣＤチップの中心部とボンディング・
パッド部近辺における分光特性が異なるという問題点が
あった。なお、上記の改善策として、穴あけしたボンデ
ィング・パッド部に詰め物をしたり、レジスト膜をかぶ
せたりすることが行なわれている。こうした方法によれ
ば、色分離フィルタの均一化は達せられるものの、前記
同様に残留物によるボンディング・パッドへの悪影響は
解消できず、しかも詰め物で埋めるという工程が増え、
製造効率の低下要因となる。However, in the above method, when forming a color separation filter, the filter forming film on the exposed bonding pad portion is treated with an alkaline solvent, so the bonding pad portion is washed with the alkaline solvent. This has the disadvantage that the bonding property with the bonding wire deteriorates due to erosion and erosion, or component materials of the filter forming film remain on the bonding pad portion and become contaminated. In addition, since there is a hole in the passivation film on the bonding pad part to expose the butt part, when the color separation filter is formed, the color separation filter near the bonding pad part is attached to the filter in the center of the CCD chip. The thickness of the filter cannot be made uniform, and bonding with the center of the CCD chip.
There was a problem in that the spectral characteristics were different in the vicinity of the pad portion. As a measure to improve the above-mentioned problem, the hole-drilled bonding pad portion is filled with material or covered with a resist film. Although this method achieves uniform color separation filters, it cannot eliminate the negative effects of residue on the bonding pads as described above, and the process of filling the bonding pads with filler increases.
This causes a decrease in manufacturing efficiency.
本発明は、上記の事情に鑑みてなされたもので、固体撮
像素子に色分離フィルタを形成後にボンディング・パッ
ド部の穴明けを行なうことで、アルカリ系の溶剤によ乞
処理や色分離フィルタの成分材料の残留によるボンディ
ング・パッド部への悪影響を防止し、かっ色分離フィル
タが直接的に一様に形成されたカラー月面体操像装置の
製造方法を提供することを目的とする。The present invention has been made in view of the above-mentioned circumstances, and by drilling holes in the bonding pad portion after forming a color separation filter on a solid-state image sensor, it is possible to remove the color separation filter using an alkaline solvent. It is an object of the present invention to provide a method for manufacturing a color lunar surface gymnastics image device in which a brown separation filter is directly and uniformly formed while preventing an adverse effect on a bonding pad portion due to residual component materials.
即ち、本発明はボンディング・パッドを有する複数の固
体撮像素子が形成されたウェハ上にパッシベーション膜
を被覆し、該膜上に色分離フィルタを形成した後、前記
素子のボンディング・パッドに対応する色分離フィルタ
を開孔し、更にとの開孔部分から露出するパッシベーシ
ョン膜部分をエツチング除去してボンディング・パッド
部を露出させることを特徴とするものである。That is, in the present invention, a passivation film is coated on a wafer on which a plurality of solid-state image sensing devices having bonding pads are formed, and a color separation filter is formed on the film, and then color separation filters are formed that correspond to the bonding pads of the devices. This method is characterized in that a hole is opened in the separation filter, and a portion of the passivation film exposed through the hole is etched away to expose a bonding pad portion.
本発明で用いられる色分離フィルタの形状にはモザイク
状、市松状、ストライプ状等のものがあり、色分離フィ
ルタの色には、赤、青、緑の３原色の他、補色、或いは
光シールドの黒色等が挙げられる。また、色分離フィル
タの種類としては、ゼラチン等の材料を主体とした有機
材からなるもの、写真フィルムと同様の乳剤からなるも
の等が挙げられる。更に固体撮像素子上に形成され、る
ときの色分離フィルタの着色順序はいずれの色から行な
ってもよい。The shapes of the color separation filters used in the present invention include mosaic, checkerboard, and stripe shapes, and the colors of the color separation filters include the three primary colors of red, blue, and green, complementary colors, or light shielding. Examples include black color. Further, the types of color separation filters include those made of an organic material mainly consisting of gelatin and the like, and those made of an emulsion similar to photographic film. Further, when formed on a solid-state image sensor, the color separation filter may be colored in any order.
本発明に用いるパッシベーション膜トしては、例えばリ
ン珪酸ガラス膜（ＰＳＧ膜）、ホウ珪酸ガラス膜（ＢＳ
Ｇ膜）、上素珪酸ガラス膜（Ａｇ２Ｏ膜）、シリコン窒
化膜（ＳｌｍＮｍ膜）等が挙げらむる。また、その形成
手段としては、例えばＣＶＤ法、ケイ素化合物あるいは
リン、ボロン等の化合物を含むケイ素化合物をアルコー
ル等に溶解した無機材料等をスピンナー等で回転塗布す
る方法、或いは微粒子状ガラスを有機バインダー、溶剤
でインキ化後、スクリーン印祠法で形成する方法等を採
用し得る。Examples of the passivation film used in the present invention include a phosphosilicate glass film (PSG film), a borosilicate glass film (BSG film), and a borosilicate glass film (BSG film).
Examples include a silicon nitride film (SlmNm film), a silicate glass film (Ag2O film), and a silicon nitride film (SlmNm film). In addition, methods for forming it include, for example, the CVD method, a method in which a silicon compound or a silicon compound containing compounds such as phosphorus and boron are dissolved in alcohol, etc., and then spin-coated using a spinner, or fine particulate glass is coated with an organic binder. , a method in which the ink is formed with a solvent and then formed by a screen impression method, etc. may be adopted.
次に、本発明の実施例を第２図（ａ）〜（ｅ）、第３図
、第４図に基づいて詳細に説明する。Next, embodiments of the present invention will be described in detail based on FIGS. 2(a) to (e), FIGS. 3 and 4.
〔１〕まず、Ｐ形シリコン基板（ウェハ）Ｕに会知の所
定の方法により選択拡散、エツチング処理、開孔等を行
ない、ＣＣＤ動作に必要な埋め込みチャネル用のｎ中層
２２・・・、出力回路のソースやドレインのｎ中層２３
・・・、及びチャネルカット用ｐ＋層２４・・・が設け
られ前記基板Ｕ上には絶縁膜を介して例えばゲート電極
等のポリシリコン電極（図示せず）が形成されている。[1] First, selective diffusion, etching, opening, etc. are performed on a P-type silicon substrate (wafer) U by a well-known predetermined method, and an n-middle layer 22 for a buried channel necessary for CCD operation, output N-middle layer 23 of the source and drain of the circuit
. . . and a p+ layer 24 for channel cutting are provided, and a polysilicon electrode (not shown) such as a gate electrode is formed on the substrate U via an insulating film.
次に、この電極を含む全面に層間絶縁膜２５を堆積し、
更に前記ｎ中層２３及びポリシリコン電極部（図示せず
）等に対応する層間絶縁膜２５部分にコンタクトホール
２６を開孔し、同時に各チップ間のダイシング・ライン
２７に沿う層間絶縁膜２５部分を選択的にエツチング除
去する。更に絶縁膜２５上にＡノ膜を真空蒸着し、パタ
ーニングして一端が前記コンタクトホール２６を介して
ｎ 層２３と接続し、他端が層間絶縁膜２５上に延出し
てボンディング・パッド２８とした配線を形成する。次
いで、前記絶縁膜２５上にＣＶＤ法により例えばリン珪
酸ガラス（Ｐ Ｓ Ｇ）からなるパッシベーション膜２
９を堆積する。Next, an interlayer insulating film 25 is deposited on the entire surface including this electrode,
Furthermore, a contact hole 26 is formed in a portion of the interlayer insulating film 25 corresponding to the n-middle layer 23 and a polysilicon electrode portion (not shown), etc., and at the same time, a contact hole 26 is formed in a portion of the interlayer insulating film 25 along a dicing line 27 between each chip. Selectively remove by etching. Further, an A film is vacuum-deposited on the insulating film 25 and patterned so that one end is connected to the N layer 23 through the contact hole 26 and the other end is extended onto the interlayer insulating film 25 and connected to the bonding pad 28. form the wiring. Next, a passivation film 2 made of, for example, phosphosilicate glass (PSG) is formed on the insulating film 25 by a CVD method.
Deposit 9.
続いて、該パッシベーション膜２９上に感光性のある被
着色層を塗布し、所定形状のマスクを介して該被着色層
を露光し、例えば赤色用現像を行なって着色させ、赤フ
ィルタＳＯ，を形成した後、同様に他の被着色層領域を
露光しフィルム色に対応する現像処理を行ない、順次緑
フィルタ３０１、青フィルタ３０ｓ、黒フィルタ３０４
と形成して色分離フィルタ３０を作成する。その後、こ
の色分離フィルタＳＯ上に例えばエビナコートクリア（
東京化学工業（（転）製画品名）を塗布して保護膜３１
を形成する（第２図（ａ）図示）。Subsequently, a photosensitive coloring layer is applied on the passivation film 29, and the coloring layer is exposed to light through a mask of a predetermined shape, and is colored by, for example, red development, and the red filter SO is formed. After forming, the other colored layer areas are exposed in the same way and development processing corresponding to the film color is performed, and a green filter 301, a blue filter 30s, and a black filter 304 are sequentially formed.
The color separation filter 30 is created by forming the following. Then, for example, apply Evina Coat Clear (
Protective film 31 is applied by applying Tokyo Chemical Industry ((trans)art product name)
(as shown in FIG. 2(a)).
〔ｉ１〕次いで、保護膜３１上にフォトレジスト膜３２
を全面に塗布し、乾燥後、露光、現像を行ないボンディ
ング・パッド部２８′・・・及びダイシング・ライン２
７に対応するフォトレジスト膜３２の部分を開孔する（
第２図（ｂ１図示）。続いて、前記フォトレジスト膜３
２をマスクとして、露出する保護膜３１をエツチング除
去し、更に色分離フィルタ（黒フィルタ３ｏ４）も同様
にエツチング除去する（第２図（Ｃ）図示）。[i1] Next, a photoresist film 32 is formed on the protective film 31.
is applied to the entire surface, and after drying, exposure and development are performed to form bonding pad portions 28'... and dicing lines 2.
A hole is opened in the portion of the photoresist film 32 corresponding to 7 (
Figure 2 (b1 illustration). Subsequently, the photoresist film 3
2 as a mask, the exposed protective film 31 is removed by etching, and the color separation filter (black filter 3o4) is also removed by etching (as shown in FIG. 2C).
（ｉｉｉ ）次いで、フォトレジスト膜３２をマスクと
して露出したパッシベーション膜２９部分をＣＦ４等の
ドライエツチングで処理し、ボンディング・パッド部２
８゛・・・を露出させ、同時にダイシング・ライン２７
を形成する（第２図（切図示）。続いて、フォトレジス
ト膜３２を０．ガス中でドライエツチングにて灰化させ
、取り除く（第２図（Ｃ）、第３図及び第４図図→。な
お第３図はＣＣＤチップ３３が形成されたウェハＬユの
平面図、第４図は第３図の部分拡大図を示す。このよう
にウェハ２１にチップ３３を形成後、ダイシング・ライ
ン２７に沿って割断し１、得られたＣＣＤチップ３３を
、ｆッヶージに組み込み、第１図と同様な固体撮像装置
を製造する。(iii) Next, using the photoresist film 32 as a mask, the exposed portion of the passivation film 29 is dry-etched with CF4 or the like, and the bonding pad portion 2 is removed.
8゛... is exposed and at the same time dicing line 27
The photoresist film 32 is then incinerated and removed by dry etching in a 0.0% gas (FIG. 2(C), FIG. 3, and FIG. 4). →. Fig. 3 is a plan view of the wafer L on which the CCD chips 33 are formed, and Fig. 4 is a partially enlarged view of Fig. 3. After forming the chips 33 on the wafer 21 in this way, the dicing line The CCD chip 33 thus obtained is then cut along 27, and the resulting CCD chip 33 is assembled into an f-cage to produce a solid-state imaging device similar to that shown in FIG.
しかして、本発明方法によれば、ボンディング、パッド
２８・・・上のパッシベーション膜２９を色分離フィル
タ３０を形成後に穴明けしてボンディング・パッド部２
８′・・・を露出させるため、従来の如くアルカリ系の
溶剤や色分離フィルタＳＯ−形成時の成分材料によるボ
ンディング・バット部２８′への侵食、汚染を防止し、
ボンディング性能を著しく向上できる。また、色分離フ
ィルタ３０形成用の被着色層をボンディング・パッド部
２８′、を露出する前に被覆するから、被着色層は平坦
なパッシベーション膜２９に被覆されることになり、こ
の被着色層を露光、現像処理等を行なうことによって均
一膜で分光特性の良好な色分離フィルタＳＯを形成でき
る。According to the method of the present invention, holes are formed in the passivation film 29 on the bonding pads 28 after the color separation filter 30 is formed.
8', to prevent erosion and contamination of the bonding butt portion 28' by alkaline solvents and component materials during the formation of the color separation filter SO-, as in the past.
Bonding performance can be significantly improved. Further, since the colored layer for forming the color separation filter 30 is coated before exposing the bonding pad portion 28', the colored layer is covered with the flat passivation film 29, and this colored layer By performing exposure, development, etc., it is possible to form a color separation filter SO with a uniform film and good spectral characteristics.
なお、本発明に係る固体撮像装置に用いられる固体撮像
装置は、上記実施例の如（ＣＯＤに限らず、ＭＯ８形撮
像素子等にも適用できる。Note that the solid-state imaging device used in the solid-state imaging device according to the present invention is not limited to the COD as in the above embodiment, but can also be applied to an MO8 type imaging device, etc.
以上詳述した如く本発明によれば、従来の如くボンディ
ング・パッド部の侵食や汚れに起因するボンディング不
良を防止し、かっ色分離フィルタをウェハ全体に直接的
に均一膜厚で形成でき、もって高歩留りで良好な分光特
性を有するカラー用固体撮像装置の製造方法を提供でき
るものである。As described in detail above, according to the present invention, it is possible to prevent bonding failures caused by erosion and dirt on the bonding pads as in the past, and to form a brown separation filter directly over the entire wafer with a uniform thickness. It is possible to provide a method for manufacturing a color solid-state imaging device with high yield and good spectral characteristics.
ゝ第１図は、従来のカラー用固体撮像装置の断面図、第
２図（ａ）〜（ｅ）は本発明に係るカラー用固体撮像装
置に用いられるチップの製造工程を示す断面図、第３図
は、第２図（ｅ）に示すチップが複数個形成さ、れたウ
ェハの平面図、第４図は第３図の部分拡大図である。
１・・・セラミックパッケージ、３・・・固体撮像素子
、４・・・色分離フィルタ、５’、２ｇ’・・・ボンデ
ィング・パッド部、８・・・光学窓ガラス体、 ２１−
・−ｐ型シリコン基板（ウェハ）、２２，２３・・・ｎ
＋層、２４・・・ｐ中層、２５・・・層間絶縁膜、２７
／・・・ダイシング・ライン、２８・・・ボンディング
・パッド、２９・・・パッシベーション膜、ＳＯ−＠分
離フィルタ、３０重 ｅ ３０ｔ ｅ ３０ｓ ｅ
３０４ ・・・赤、緑、青。
黒フィルタ、３１・・・保饅膜、３２・・・フォトレジ
スト膜、３３・・・ＣＣＤチップ。
才１図1 is a sectional view of a conventional color solid-state imaging device, and FIGS. 3 is a plan view of a wafer on which a plurality of chips shown in FIG. 2(e) are formed, and FIG. 4 is a partially enlarged view of FIG. 3. DESCRIPTION OF SYMBOLS 1... Ceramic package, 3... Solid-state image sensor, 4... Color separation filter, 5', 2g'... Bonding pad part, 8... Optical window glass body, 21-
-p-type silicon substrate (wafer), 22, 23...n
+ layer, 24...p middle layer, 25... interlayer insulating film, 27
/... Dicing line, 28... Bonding pad, 29... Passivation film, SO-@ separation filter, 30 layers e 30t e 30s e
304...Red, green, blue. Black filter, 31... protective film, 32... photoresist film, 33... CCD chip. 1 figure
Claims (1)
成されたウェハ上にパッシベーション膜を被覆し、該膜
上に色分離フィルタを形成した後、前記素子のボンディ
ング・パッドに対応する色分離フィルタ部分を開孔し、
更にこの開孔部分から露出するパッシベーション膜部分
をエツチング除去してボンディング・バット部を露出さ
せることを特徴とするカラー用固体撮像装置の製造方法
。A passivation film is coated on a wafer on which a plurality of solid-state imaging devices having bonding pads are formed, and a color separation filter is formed on the film, and then a portion of the color separation filter corresponding to the bonding pad of the device is opened. hole,
The method for manufacturing a color solid-state image pickup device further comprises etching away the passivation film portion exposed from the opening to expose the bonding butt portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56107477A JPS589364A (en) | 1981-07-09 | 1981-07-09 | Manufacture of solid state color image pickup device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56107477A JPS589364A (en) | 1981-07-09 | 1981-07-09 | Manufacture of solid state color image pickup device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS589364A true JPS589364A (en) | 1983-01-19 |
Family
ID=14460196
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56107477A Pending JPS589364A (en) | 1981-07-09 | 1981-07-09 | Manufacture of solid state color image pickup device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS589364A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59175761A (en) * | 1983-03-26 | 1984-10-04 | Mitsubishi Electric Corp | Manufacture of solid-state image pickup element with color filter |
| JPS61292960A (en) * | 1985-06-21 | 1986-12-23 | Toshiba Corp | Solid-state image pickup device |
| JPS6292656U (en) * | 1985-11-29 | 1987-06-13 | ||
| JPS6381849A (en) * | 1986-09-26 | 1988-04-12 | Hitachi Ltd | Solid-state image sensor |
-
1981
- 1981-07-09 JP JP56107477A patent/JPS589364A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59175761A (en) * | 1983-03-26 | 1984-10-04 | Mitsubishi Electric Corp | Manufacture of solid-state image pickup element with color filter |
| JPS61292960A (en) * | 1985-06-21 | 1986-12-23 | Toshiba Corp | Solid-state image pickup device |
| JPS6292656U (en) * | 1985-11-29 | 1987-06-13 | ||
| JPS6381849A (en) * | 1986-09-26 | 1988-04-12 | Hitachi Ltd | Solid-state image sensor |
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